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41. 发明申请

US20070201531A1 OPTICALLY PUMPED SEMICONDUCTOR LASER DEVICE 有权
标题翻译：光学泵浦半导体激光器件
公开(公告)号：US20070201531A1
公开(公告)日：2007-08-30
申请号：US10579519
申请日：2004-11-09
申请人： Wolfgang Schmid , Peter Brick , Stephan Lutgen , Tony Albrecht , Franz Eberhard
发明人： Wolfgang Schmid , Peter Brick , Stephan Lutgen , Tony Albrecht , Franz Eberhard
IPC分类号： H01S3/093 , H01S3/081
CPC分类号： H01S5/183 , H01H13/705 , H01H13/86 , H01H2209/07 , H01H2223/008 , H01H2223/034 , H01H2239/032 , H01H2239/034 , H01H2239/038 , H01S3/094084 , H01S5/026 , H01S5/041 , H01S5/101 , H01S5/1082 , H01S5/1085 , H01S5/4031 , H01S5/4056
摘要： An optically pumped semiconductor laser device having a surface-emitting vertical emission region (1) and at least one monolithically integrated pump radiation source (2) for optically pumping the vertical emission region (1). The semiconductor laser device is distinguished by the fact that the pump radiation enters the vertical emission region (1) in the form of partial bundles of rays of radiation with different radiation directions so that the pump radiation and the fundamental mode of the vertical emission region (1) have an overlap which is suitable for the excitation of this fundamental mode. This device is based on the fact that the fundamental mode of the vertical emission region (1) is preferably excited when the spatial intensity distribution of the pump radiation matches the profile of the fundamental mode.
摘要翻译：一种具有表面发射垂直发射区域（1）和至少一个用于光学泵浦垂直发射区域（1）的单片集成泵浦辐射源（2）的光泵浦半导体激光器件。半导体激光器件的特征在于泵辐射以不同辐射方向的部分束辐射线的形式进入垂直发射区域（1），使得泵浦辐射和垂直发射区域的基本模式 1）具有适合于该基本模式的激励的重叠。该装置基于以下事实：当泵浦辐射的空间强度分布与基本模式的轮廓匹配时，优选地激发垂直发射区域（1）的基本模式。

42. 发明授权

US07224710B2 Optically pumped semiconductor laser apparatus 有权
标题翻译：光泵浦半导体激光装置
公开(公告)号：US07224710B2
公开(公告)日：2007-05-29
申请号：US10666478
申请日：2003-09-19
申请人： Wolfgang Schmid , Tony Albrecht
发明人： Wolfgang Schmid , Tony Albrecht
IPC分类号： H01S5/00 , H01S3/04 , H01S3/09
CPC分类号： H01S5/18372 , H01S5/02461 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/4056
摘要： An optically pumped semiconductor laser apparatus having a vertical emitter (2) and having one pump laser (5) for optically pumping the vertical emitter (2), with the vertical emitter (2) and the pump laser (5) being monolithically integrated. The pump laser (5) and the vertical emitter (2) each have a radiation-emitting zone (3, 6). During operation, the temperature of the radiation-emitting zone (6) of the pump laser (5) is lower than the temperature of the radiation-emitting zone (3) of the vertical emitter (2).
摘要翻译：一种具有垂直发射器（2）并且具有用于光学泵浦垂直发射器（2）的一个泵激光器（5）的光泵浦半导体激光装置，垂直发射器（2）和泵浦激光器（5）被整体地集成。泵浦激光器（5）和垂直发射器（2）各自具有辐射发射区（3,6）。在操作期间，泵浦激光器（5）的辐射发射区域（6）的温度低于垂直发射器（2）的辐射发射区域（3）的温度。

43. 发明授权

US07023894B2 Optically pumped semiconductor laser and method for producing the same 失效
标题翻译：光泵浦半导体激光器及其制造方法
公开(公告)号：US07023894B2
公开(公告)日：2006-04-04
申请号：US10679153
申请日：2003-10-10
申请人： Tony Albrecht
发明人： Tony Albrecht
IPC分类号： H01S3/091 , H01S5/00
CPC分类号： H01S3/091 , H01S3/092 , H01S3/0941 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/183 , H01S5/187 , H01S5/34 , H01S5/40
摘要： An optically pumped semiconductor laser device having a substrate (12) having a first main area (14) and a second main area (16), a pump laser (30) and a vertically emitting laser (40) optically pumped by the pump laser (30) being arranged on the first main area (14). The first main area (14) of the substrate (12) is patterned and has first regions (20) situated at a higher level and also second regions (18) situated at a lower level. The pump laser (30) is arranged on a region (20) situated at a higher level of the substrate (12), and the vertically emitting laser (40) is arranged above intermediate layers (50, 30′) on a region (18) situated at a lower level of the substrate (12). The height difference (Δ) between the first (20) and second (18) regions of the substrate (12) and the layer thickness of the intermediate layers (50, 30′) is chosen in such a way that the pump laser (30) and the vertically emitting laser (40) are situated at the same level. A substrate which is patterned in this way enables semiconductor layers of the pump laser and of the vertically emitting laser to be applied together in a single epitaxy step.
摘要翻译：一种具有第一主区域（14）和第二主区域（16）的基板（12）的光泵浦半导体激光装置，由泵浦激光器光泵浦的泵浦激光器（30）和垂直发射激光器（40） 30）布置在第一主区域（14）上。衬底（12）的第一主区域（14）被图案化，并且具有位于更高级别的第一区域（20）以及位于较低级别的第二区域（18）。泵浦激光器（30）布置在位于基板（12）的较高级的区域（20）上，并且垂直发射激光器（40）布置在区域（18）上的中间层（50,30'）之上）位于基底（12）的较低水平处。选择基板（12）的第一（20）和第二（18）区域之间的高度差（Delta）和中间层（50,30'）的层厚度，使得泵浦激光器）和垂直发射激光器（40）位于同一水平。以这种方式图案化的衬底使得泵浦激光器和垂直发射激光器的半导体层能够在单个外延步骤中一起施加。

44. 发明授权

US06973113B2 Optically pumped semiconductor laser device 有权
标题翻译：光泵浦半导体激光器件
公开(公告)号：US06973113B2
公开(公告)日：2005-12-06
申请号：US10444800
申请日：2003-05-23
申请人： Tony Albrecht , Norbert Linder , Wolfgang Schmid
发明人： Tony Albrecht , Norbert Linder , Wolfgang Schmid
IPC分类号： H01S5/026 , H01S5/04 , H01S5/10 , H01S5/183 , H01S3/091
CPC分类号： H01S5/18305 , H01S5/026 , H01S5/041 , H01S5/18388 , H01S5/4056 , H01S2301/166
摘要： An optically pumped semiconductor laser device having a substrate (1) having a first main area (2) and a second main area (3), with at least one pump laser (11) being arranged on the first main area (2). The semiconductor laser device comprises a vertically emitting laser (4) having a resonator having a first mirror (9) being arranged on the side of the first main area (2) and a second mirror (20) being arranged on the side of the second main area (3) of the substrate (1).
摘要翻译：一种光泵浦半导体激光装置，其具有具有第一主区域（2）和第二主区域（3）的基板（1），其中至少一个泵浦激光器（11）布置在第一主区域（2）上。半导体激光器件包括具有谐振器的垂直发射激光器（4），该谐振器具有布置在第一主区域（2）侧面上的第一反射镜（9）和布置在第二主体侧面上的第二反射镜（20）基板（1）的主区域（3）。

45. 发明授权

US06947460B2 Optically pumpable surface-emitting semiconductor laser device 失效
公开(公告)号：US06947460B2
公开(公告)日：2005-09-20
申请号：US10402814
申请日：2003-03-28
申请人： Werner Späth , Johann Luft , Stephan Lutgen , Norbert Linder , Tony Albrecht , Ulrich Steegmüller
发明人： Werner Späth , Johann Luft , Stephan Lutgen , Norbert Linder , Tony Albrecht , Ulrich Steegmüller
IPC分类号： H01S5/026 , H01S5/04 , H01S5/062 , H01S5/10 , H01S5/14 , H01S5/183 , H01S5/00 , H01S3/08 , H01S3/091 , H01S3/092
CPC分类号： H01S5/141 , H01S5/026 , H01S5/041 , H01S5/06226 , H01S5/1032 , H01S5/1071 , H01S5/18305 , H01S5/1835 , H01S5/4056
摘要： In an optically pumpable surface-emitting semiconductor laser device with a vertical emitter with a radiation-generating active layer, at least one modulation radiation source for modulating the output power of the surface-emitting semiconductor device is provided. The modulation radiation source is formed by an edge-emitting semiconductor structure with an active layer, and which is disposed such that during operation it radiates into the radiation-generating active layer of the vertical emitter. This produces an easily modulatable surface-emitting laser source of high power and high beam quality. A pumping radiation source for optically pumping the active layer of the vertical emitter is preferably provided in the semiconductor laser device.

46. 发明授权

US08772911B2 Semiconductor diode and method for producing a semiconductor diode 有权
标题翻译：半导体二极管及半导体二极管的制造方法
公开(公告)号：US08772911B2
公开(公告)日：2014-07-08
申请号：US13580646
申请日：2011-02-10
申请人： Tony Albrecht , Markus Maute , Martin Reufer , Heribert Zull
发明人： Tony Albrecht , Markus Maute , Martin Reufer , Heribert Zull
IPC分类号： H01L29/06
CPC分类号： H01L33/38 , H01L33/025 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A semiconductor diode has a first semiconductor layer (102) of a first conductivity type and a second semiconductor layer of a second conductivity type having a doping. The second semiconductor layer has a vertical electrical via region (106) which is connected to the first semiconductor layer and in which the doping is modified in such a way that the electrical via region (106) has the first conductivity type. A method for producing such a semiconductor diode is described.
摘要翻译：半导体二极管具有第一导电类型的第一半导体层（102）和具有掺杂的第二导电类型的第二半导体层。第二半导体层具有连接到第一半导体层的垂直电通孔区域（106），并且其中掺杂被修改为使得电通孔区域（106）具有第一导电类型。描述了制造这种半导体二极管的方法。

47. 发明申请

US20110272728A1 Radiation-Emitting Semiconductor Chip 有权
标题翻译：辐射发射半导体芯片
公开(公告)号：US20110272728A1
公开(公告)日：2011-11-10
申请号：US12991864
申请日：2009-04-17
申请人： Patrick Rode , Lutz Hoeppel , Karl Engl , Tony Albrecht
发明人： Patrick Rode , Lutz Hoeppel , Karl Engl , Tony Albrecht
IPC分类号： H01L33/36
CPC分类号： H01L25/167 , H01L33/0079 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： A radiation-emitting semiconductor chip (1) is provided, which comprises a carrier (5), a semiconductor body (2) with a semiconductor layer sequence, a first contact (35) and a second contact (36). The semiconductor layer sequence comprises an active region (20) provided for generating radiation, which is arranged between a first semiconductor layer (21) and a second semiconductor layer (22). The carrier (5) comprises a major surface (51) facing the semiconductor body (2). The first semiconductor layer (21) is arranged on the side of the active region (20) facing the major surface (51) of the carrier (5) and is electrically contactable by means of the first contact (35). The second semiconductor layer (22) is electrically contactable by means of the second contact (36). A protection diode (4) is formed in a current path extending between the first contact (35) and the second contact (36) through the carrier (5).
摘要翻译：提供了一种辐射发射半导体芯片（1），其包括载体（5），具有半导体层序列的半导体本体（2），第一触点（35）和第二触点（36）。半导体层序列包括设置在第一半导体层（21）和第二半导体层（22）之间的用于产生辐射的有源区（20）。载体（5）包括面向半导体本体（2）的主表面（51）。第一半导体层（21）布置在与载体（5）的主表面（51）相对的有源区域（20）的侧面上，并且可通过第一触点（35）电接触。第二半导体层（22）可通过第二接触件（36）电接触。保护二极管（4）形成在通过载体（5）在第一接触件（35）和第二接触件（36）之间延伸的电流通路中。

48. 发明申请

US20110079810A1 Optoelectronic Semiconductor Chip Comprising a Reflective Layer 有权
标题翻译：包含反射层的光电半导体芯片
公开(公告)号：US20110079810A1
公开(公告)日：2011-04-07
申请号：US12922577
申请日：2009-04-24
申请人： Tony Albrecht , Andreas Weimar , Anna Kasprzak-Zablocka , Christian Eichinger , Kerstin Neveling
发明人： Tony Albrecht , Andreas Weimar , Anna Kasprzak-Zablocka , Christian Eichinger , Kerstin Neveling
IPC分类号： H01L33/60
CPC分类号： H01L33/385 , H01L33/08 , H01L33/40 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip is specified, comprising a first contact location (1) and a second contact location (2), and a reflective layer (3), which is directly electrically conductively connected to the second contact location. The reflective layer contains a metal that tends toward migration, and the reflective layer is arranged in such a way that a migration path (4) for the metal can form between the second and the first contact location. A means (6) which, during operation of the semiconductor chip, forms an electric field that counteracts the migration of the metal is provided at the semiconductor chip.
摘要翻译：指定了包括第一接触位置（1）和第二接触位置（2）的光电半导体芯片，以及直接导电地连接到第二接触位置的反射层（3）。反射层含有倾向于迁移的金属，并且反射层以这样的方式布置，使得金属的迁移路径（4）可以形成在第二和第一接触位置之间。在半导体芯片的半导体芯片工作期间形成抵消金属迁移的电场的装置（6）。

49. 发明授权

US07633982B2 Optically pumped surface emitting semiconductor laser device 有权
标题翻译：光学泵浦表面发射半导体激光器件
公开(公告)号：US07633982B2
公开(公告)日：2009-12-15
申请号：US11140862
申请日：2005-05-31
申请人： Tony Albrecht , Peter Brick
发明人： Tony Albrecht , Peter Brick
IPC分类号： H01S5/00
CPC分类号： H01S5/183 , H01S5/026 , H01S5/041 , H01S5/1064 , H01S5/4056 , H01S2301/18
摘要： A surface emitting semiconductor laser device, having at least one monolithically integrated pump radiation source (20), in which the pump radiation source (20) has at least one edge emitting semiconductor structure (9) that is suitable for emission of electromagnetic radiation whose intensity profile transversely with respect to the emission direction (z) of the semiconductor structure follows a predeterminable curve. Such a surface emitting semiconductor laser device emits electromagnetic radiation having a particularly good beam quality.
摘要翻译：一种表面发射半导体激光器件，具有至少一个单片集成泵浦辐射源（20），其中所述泵浦辐射源（20）具有至少一个边缘发射半导体结构（9），所述边缘发射半导体结构（9）适于发射电磁辐射，所述电磁辐射的强度相对于半导体结构的发射方向（z）横向的剖面遵循可预定的曲线。这种表面发射半导体激光器件发射具有特别好的光束质量的电磁辐射。

50. 发明申请

US20090304039A1 OPTOELECTRONIC SEMICONDUCTOR ELEMENT 有权
标题翻译：光电子半导体元件
公开(公告)号：US20090304039A1
公开(公告)日：2009-12-10
申请号：US12293057
申请日：2007-03-15
申请人： Stephan Lutgen , Peter Brick , Tony Albrecht
发明人： Stephan Lutgen , Peter Brick , Tony Albrecht
IPC分类号： H01S5/00 , H01L33/00
CPC分类号： H01S5/18388 , H01S3/108 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/227 , H01S5/4025 , H01S5/4031
摘要： An optoelectronic semiconductor component has a semiconductor body (1) comprising a surface emitting vertical emitter region (2) comprising a vertical emitter layer (3), at least one pump source (4) provided for optically pumping the vertical emitter layer (3), and a radiation passage area (26) through which electromagnetic radiation (31) generated in the vertical emitter layer leaves the semiconductor body (1), wherein the pump source (4) and the vertical emitter layer (3) are at a distance from one another in a vertical direction.
摘要翻译：光电子半导体部件具有包括发射垂直发射极区域（2）的表面的半导体本体（1），所述表面发射垂直发射极区域包括垂直发射极层（3），设置用于光学泵浦垂直发射极层（3）的至少一个泵浦源（4）和在垂直发射极层中产生的电磁辐射（31）离开半导体本体（1）的辐射通道区域（26），其中泵浦源（4）和垂直发射极层（3）距离一个距离另一个在垂直方向。

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