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1. 发明申请

US20120267662A1 LIGHT-EMITTING DIODE CHIP 审中-公开
标题翻译：发光二极管芯片
公开(公告)号：US20120267662A1
公开(公告)日：2012-10-25
申请号：US13388265
申请日：2010-07-13
申请人： Markus Maute , Tony Albrecht , Anna Kasprzak-Zablocka
发明人： Markus Maute , Tony Albrecht , Anna Kasprzak-Zablocka
IPC分类号： H01L33/60
CPC分类号： H01L33/20 , H01L33/405 , H01L33/44 , H01L2933/0025
摘要： A light-emitting diode chip comprises a semiconductor body (1) having a first (1A) and a second region (1B); an active zone (2) within the semiconductor body (1), which active zone, during the operation of the light-emitting diode chip (100), emits electromagnetic radiation through a radiation coupling-out area (11) formed at least in places by a first main area (111) of the semiconductor body (1); at least one trench (3) in the semiconductor body (1) wherein parts of the semiconductor body (1) are removed in the region of the trench, wherein the at least one trench (3) extends at least as far as the active zone (2), the at least one trench (3) completely surrounds the first region (1A) in a lateral direction, and the second region (1B) completely surrounds the at least one trench (3) and the first region (1A) in a lateral direction.
摘要翻译：发光二极管芯片包括具有第一（1A）和第二区域（1B）的半导体本体（1）; 在所述半导体本体（1）内的有源区（2）中，所述有源区在所述发光二极管芯片（100）的操作期间通过至少形成在所述发光二极管芯片（100）上的辐射耦合区域（11）发射电磁辐射，通过半导体本体（1）的第一主区域（111）; 在所述半导体主体（1）中的至少一个沟槽（3），其中所述半导体主体（1）的部分在所述沟槽的区域中被去除，其中所述至少一个沟槽（3）至少延伸到所述有源区（2）中，所述至少一个沟槽（3）在横向方向上完全围绕所述第一区域（1A），并且所述第二区域（1B）完全围绕所述至少一个沟槽（3）和所述第一区域（1A）横向。

2. 发明授权

US08710512B2 Optoelectronic semiconductor chip comprising a reflective layer 有权
标题翻译：包括反射层的光电半导体芯片
公开(公告)号：US08710512B2
公开(公告)日：2014-04-29
申请号：US12922577
申请日：2009-04-24
申请人： Tony Albrecht , Andreas Weimar , Anna Kasprzak-Zablocka , Christian Eichinger , Kerstin Neveling
发明人： Tony Albrecht , Andreas Weimar , Anna Kasprzak-Zablocka , Christian Eichinger , Kerstin Neveling
IPC分类号： H01L33/42
CPC分类号： H01L33/385 , H01L33/08 , H01L33/40 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip, comprising a first contact location (1) and a second contact location (2), and a reflective layer (3), which is directly electrically conductively connected to the second contact location. The reflective layer contains a metal that tends toward migration, and the reflective layer is arranged in such a way that a migration path (4) for the metal can form between the second and the first contact location. A means (6) which, during operation of the semiconductor chip, forms an electric field that counteracts the migration of the metal is provided at the semiconductor chip.
摘要翻译：包括第一接触位置（1）和第二接触位置（2）的光电子半导体芯片以及直接导电地连接到第二接触位置的反射层（3）。反射层含有倾向于迁移的金属，并且反射层以这样的方式布置，使得金属的迁移路径（4）可以形成在第二和第一接触位置之间。在半导体芯片的半导体芯片工作期间形成抵消金属迁移的电场的装置（6）。

3. 发明授权

US09343637B2 Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips 有权
标题翻译：光电半导体芯片及其制造方法
公开(公告)号：US09343637B2
公开(公告)日：2016-05-17
申请号：US13981879
申请日：2012-02-07
申请人： Karl Engl , Markus Maute , Stefanie Rammelsberger , Anna Kasprzak-Zablocka
发明人： Karl Engl , Markus Maute , Stefanie Rammelsberger , Anna Kasprzak-Zablocka
IPC分类号： H01L33/62 , H01L33/52 , H01L33/40
CPC分类号： H01L33/0075 , H01L33/382 , H01L33/385 , H01L33/405 , H01L33/52 , H01L2933/005
摘要： An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.
摘要翻译：光电子半导体芯片具有半导体本体和设置半导体本体的基板。半导体本体具有设置在第一导体类型的第一半导体层和第二导体类型的第二半导体层之间的有源区。第一半导体层设置在面向衬底的有源区的一侧。第一半导体层导电地连接到设置在衬底和半导体本体之间的第一端接层。封装层设置在第一端接层和衬底之间，并且在半导体芯片的平面图中至少在限定半导体本体的侧面上的一些区域中突出。

4. 发明申请

US20140021507A1 Optoelectronic Semiconductor Chip and Method for Producing Optoelectronic Semiconductor Chips 有权
标题翻译：光电子半导体芯片及其制造方法
公开(公告)号：US20140021507A1
公开(公告)日：2014-01-23
申请号：US13981879
申请日：2012-02-07
申请人： Karl Engl , Markus Maute , Stefanie Rammelsberger , Anna Kasprzak-Zablocka
发明人： Karl Engl , Markus Maute , Stefanie Rammelsberger , Anna Kasprzak-Zablocka
IPC分类号： H01L33/52
CPC分类号： H01L33/0075 , H01L33/382 , H01L33/385 , H01L33/405 , H01L33/52 , H01L2933/005
摘要： An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.
摘要翻译：光电子半导体芯片具有半导体本体和设置半导体本体的基板。半导体本体具有设置在第一导体类型的第一半导体层和第二导体类型的第二半导体层之间的有源区。第一半导体层设置在面向衬底的有源区的一侧。第一半导体层导电地连接到设置在衬底和半导体本体之间的第一端接层。封装层设置在第一端接层和衬底之间，并且在半导体芯片的平面图中至少在限定半导体本体的侧面上的一些区域中突出。

5. 发明申请

US20110079810A1 Optoelectronic Semiconductor Chip Comprising a Reflective Layer 有权
标题翻译：包含反射层的光电半导体芯片
公开(公告)号：US20110079810A1
公开(公告)日：2011-04-07
申请号：US12922577
申请日：2009-04-24
申请人： Tony Albrecht , Andreas Weimar , Anna Kasprzak-Zablocka , Christian Eichinger , Kerstin Neveling
发明人： Tony Albrecht , Andreas Weimar , Anna Kasprzak-Zablocka , Christian Eichinger , Kerstin Neveling
IPC分类号： H01L33/60
CPC分类号： H01L33/385 , H01L33/08 , H01L33/40 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip is specified, comprising a first contact location (1) and a second contact location (2), and a reflective layer (3), which is directly electrically conductively connected to the second contact location. The reflective layer contains a metal that tends toward migration, and the reflective layer is arranged in such a way that a migration path (4) for the metal can form between the second and the first contact location. A means (6) which, during operation of the semiconductor chip, forms an electric field that counteracts the migration of the metal is provided at the semiconductor chip.
摘要翻译：指定了包括第一接触位置（1）和第二接触位置（2）的光电半导体芯片，以及直接导电地连接到第二接触位置的反射层（3）。反射层含有倾向于迁移的金属，并且反射层以这样的方式布置，使得金属的迁移路径（4）可以形成在第二和第一接触位置之间。在半导体芯片的半导体芯片工作期间形成抵消金属迁移的电场的装置（6）。

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