专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20060192233A1 BODY POTENTIAL IMAGER CELL 有权
标题翻译：身体潜像成像细胞
公开(公告)号：US20060192233A1
公开(公告)日：2006-08-31
申请号：US10906625
申请日：2005-02-28
申请人： John Ellis-Monaghan , Mark Jaffe , Alain Loiseau
发明人： John Ellis-Monaghan , Mark Jaffe , Alain Loiseau
IPC分类号： H01L27/148
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14679
摘要： An imaging circuit, an imaging sensor, and a method of imaging. The imaging cell circuit including one or more imaging cell circuits, each imaging cell circuit comprising: a transistor having a floating body for holding charge generated in the floating body in response to exposure of the floating body to electromagnetic radiation; means for biasing the transistor wherein an output of the transistor is responsive to the electromagnetic radiation; and means for selectively connecting the floating body to a reset voltage supply.
摘要翻译：成像电路，成像传感器和成像方法。所述成像单元电路包括一个或多个成像单元电路，每个成像单元电路包括：晶体管，具有浮动体，用于响应于浮体暴露于电磁辐射而保持在浮体中产生的电荷; 用于偏置晶体管的装置，其中晶体管的输出响应于电磁辐射; 以及用于选择性地将浮动体连接到复位电压源的装置。

42. 发明申请

US20060124976A1 RECESSED GATE FOR AN IMAGE SENSOR 有权
标题翻译：图像传感器的门
公开(公告)号：US20060124976A1
公开(公告)日：2006-06-15
申请号：US10905097
申请日：2004-12-15
申请人： James Adkisson , John Ellis-Monaghan , Mark Jaffe , Jerome Lasky
发明人： James Adkisson , John Ellis-Monaghan , Mark Jaffe , Jerome Lasky
IPC分类号： H01L31/113 , H01L29/76 , H01L29/94
CPC分类号： H01L27/14603 , H01L27/14601 , H01L27/14689 , H01L29/66621
摘要： A novel image sensor cell structure and method of manufacture. The imaging sensor comprises a substrate, a gate comprising a dielectric layer and gate conductor formed on the dielectric layer, a collection well layer of a first conductivity type formed below a surface of the substrate adjacent a first side of the gate conductor, a pinning layer of a second conductivity type formed atop the collection well at the substrate surface, and a diffusion region of a first conductivity type formed adjacent a second side of the gate conductor, the gate conductor forming a channel region between the collection well layer and the diffusion region. Part of the gate conductor bottom is recessed below the surface of the substrate. Preferably, a portion of the gate conductor is recessed at or below a bottom surface of the pinning layer to a depth such that the collection well intersects the channel region.
摘要翻译：一种新颖的图像传感器单元结构及其制造方法。成像传感器包括基板，包括电介质层和形成在电介质层上的栅极导体的栅极，形成在与栅极导体的第一侧相邻的基板的表面下面的第一导电类型的收集阱层，钉扎层在基板表面上形成在集合阱顶部的第二导电类型的第一导电类型的扩散区和在栅极导体的第二侧附近形成的第一导电类型的扩散区，栅极导体在集电阱层和扩散区之间形成沟道区。栅极导体底部的一部分凹陷在基板的表面下方。优选地，栅极导体的一部分在钉扎层的底表面处或下方凹陷到使得收集阱与沟道区相交的深度。

43. 发明申请

US20060073689A1 METHOD FOR FABRICATING DOPED POLYSILICON LINES 有权
标题翻译：用于制造掺杂多晶硅线的方法
公开(公告)号：US20060073689A1
公开(公告)日：2006-04-06
申请号：US10711771
申请日：2004-10-04
申请人： James Adkisson , John Ellis-Monaghan , Glenn MacDougall , Dale Martin , Kirk Peterson , Bruce Porth
发明人： James Adkisson , John Ellis-Monaghan , Glenn MacDougall , Dale Martin , Kirk Peterson , Bruce Porth
IPC分类号： H01L21/3205
CPC分类号： H01L21/265 , H01L21/28035 , H01L21/823842 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A method of fabricating polysilicon lines and polysilicon gates, the method of including: providing a substrate; forming a dielectric layer on a top surface of the substrate; forming a polysilicon layer on a top surface of the dielectric layer; implanting the polysilicon layer with N-dopant species, the N-dopant species about contained within the polysilicon layer; implanting the polysilicon layer with a nitrogen containing species, the nitrogen containing species essentially contained within the polysilicon layer.
摘要翻译：一种制造多晶硅线路和多晶硅栅极的方法，所述方法包括：提供衬底; 在所述基板的顶表面上形成介电层; 在所述电介质层的顶表面上形成多晶硅层; 用N掺杂物种注入多晶硅层，所述N掺杂物物质包含在所述多晶硅层内; 用含氮物质注入多晶硅层，含氮物质基本上包含在多晶硅层内。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式