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41. 发明授权

US5401617A Method for forming positive patterned resist layer on tantalum substrate utilizing quinone diazide composition with aromatic hydroxy additive 失效
标题翻译：使用具有芳族羟基添加剂的醌二氮化物组合物在钽基板上形成阳图案化抗蚀剂层的方法
公开(公告)号：US5401617A
公开(公告)日：1995-03-28
申请号：US230883
申请日：1994-04-20
申请人： Tetsuya Kato , Kouichi Takahashi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Tetsuya Kato , Kouichi Takahashi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/022 , G03F7/023 , G03F7/085 , H01L21/027 , H01L21/30 , H01L21/302 , H01L21/3065 , G03F7/30
CPC分类号： G03F7/0226
摘要： Proposed is an alkali-soluble, positive-working photosensitive resin composition which can be used as a material for forming a finely patterned resist layer on the surface of a metallic substrate such as tantalum to exhibit excellent adhesion of the patterned resist layer to the substrate surface. The composition comprises, in addition to a novolac resin as a film-forming agent and a naphthoquinone diazide group-containing compound as a photosensitizer, an aromatic compound having two benzene rings and at least five phenolic hydroxy groups in a molecule such as pentahydroxy and hexahydroxy benzophenone compounds as an adhesion improver.
摘要翻译：提出了一种碱溶性正性感光性树脂组合物，其可以用作在诸如钽的金属基材的表面上形成精细图案化的抗蚀剂层的材料，以显示出图案化的抗蚀剂层与基材表面的极好的粘附性。该组合物除了作为成膜剂的酚醛清漆树脂和含有萘醌二叠氮基的化合物作为光敏剂之外，还包括分子中具有两个苯环和至少五个酚羟基的芳族化合物，例如五羟基和六羟基二苯甲酮化合物作为粘合改进剂。

42. 发明授权

US5281508A Positive-working photoresist containing o-naphthoquinone diazide sulfonic acid ester and novolak resin consisting of 35 to 43% m-cresol and 65 to 57% p-cresol with substantial absence of o-cresol 失效
标题翻译：含有邻苯二酚二叠氮磺酸酯和酚醛清漆树脂的正性光致抗蚀剂由35至43％的间甲酚和65至57％的对甲酚组成，基本上不存在邻甲酚
公开(公告)号：US5281508A
公开(公告)日：1994-01-25
申请号：US935131
申请日：1992-08-21
申请人： Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Yoshiaki Arai , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
发明人： Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Yoshiaki Arai , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
IPC分类号： C08G8/08 , C08K5/42 , G03F7/032 , G03F7/023
CPC分类号： G03F7/032 , C08G8/08 , C08K5/42
摘要： A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g., VLSIs, with high fidelity is proposed. The composition comprises 100 parts by weight of a cresol novolac resin and 25-60 parts by weight of a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is prepared from a mixture of cresol isomers composed of 35-43% of m-cresol and 65-57% of p-cresol with substantial absence of o-cresol or composed of 35-43% of m-cresol, 65-57% of p-cresol and 1% or less of o-cresol.
摘要翻译：提出了适用于制造高保真度的半导体器件（例如VLSI）中的精细图案化的正性光致抗蚀剂组合物。该组合物包含100重量份的甲酚酚醛清漆树脂和25-60重量份的萘醌二叠氮化物磺酸酯作为感光组分，而甲酚酚醛清漆树脂组分由由35-43％的间甲酚和65-57％的对甲酚，基本上没有邻甲酚或由35-43％的间甲酚，65-57％的对甲酚和1％或更少的邻甲酚组成。

43. 发明授权

US5100758A Positive-working photoresist composition containing quinone diazide compound, novolak resin and alkyl pyruvate solvent 失效
标题翻译：含有醌二叠氮化合物，酚醛清漆树脂和丙酮酸烷基酯溶剂的正性光致抗蚀剂组合物
公开(公告)号：US5100758A
公开(公告)日：1992-03-31
申请号：US623014
申请日：1990-12-06
申请人： Hatsuyuki Tanaka , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hatsuyuki Tanaka , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/022 , G03F7/004 , H01L21/027 , H01L21/30
CPC分类号： G03F7/0048
摘要： A proposal is made for the use of an alkyl pyruvate or a solvent mixture mainly composed thereof as a solvent in a positive-working photoresist composition comprising an alkali-soluble novolac resin as the film-forming ingredient and a quinone diazide group-containing compound as the photosensitive ingredient. By virtue of the use of the unique solvent, the photoresist composition is advantageous in the outstandingly high stability with little moisture absorption from ambience not to cause precipitation of solid matters in addition to the quite satisfactory properties in other respects as a photoresist composition.
摘要翻译：提出在主要由它们构成的作为溶剂的烷基丙酮酸盐或其溶剂混合物中使用含有碱溶性酚醛清漆树脂作为成膜成分的正性光致抗蚀剂组合物和含醌二叠氮基化合物作为感光成分。由于使用独特的溶剂，光致抗蚀剂组合物除了在其它方面作为光致抗蚀剂组合物的相当令人满意的性能外，还具有突出的高稳定性，而且从环境几乎没有吸湿性而不会引起固体物质沉淀。

44. 发明授权

US4906549A Positive-working photoresist composition with quinone diazide sulfonic acid ester and novolac made from m-cresol, p-cresol and aliphatic phenol with 2-6 carbon atoms 失效
标题翻译：醌二叠层磺酸酯和由具有2-6个碳原子的间甲酚，对甲酚和脂族苯酚制成的酚醛清漆的正性光致抗蚀剂组合物
公开(公告)号：US4906549A
公开(公告)日：1990-03-06
申请号：US182848
申请日：1988-04-18
申请人： Shingo Asaumi , Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Toshimasa Nakayama
发明人： Shingo Asaumi , Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Toshimasa Nakayama
IPC分类号： G03C1/72 , C08G8/12 , C08G8/24 , C08K5/43 , C08L61/08 , G03F7/023 , G03F7/025 , G03F7/22 , H01L21/027
CPC分类号： G03F7/0236 , C08G8/12 , C08G8/24 , C08K5/43
摘要： A positive-working photoresist composition suitable for fine patterning in the manufacturing of semiconductor devices such as VLSIs with high fidelity is proposed. The composition comprises: (A) 100 parts by weight of a phenolic novolac resin prepared by the condensation reaction of a specific ternary mixture of three kinds of phenolic compounds and formaldehyde; and (B) 20-60 parts by weight of a photosensitizer which is preferably an ester of naphthoquinone diazidesulfonic acid and a hydroxylated benzophenone compound. The phenolic mixture is composed of 10-45% by weight of m-cresol, 35-88% by weight of p-cresol and 2-30% by weight of a substituted phenol represented by the general formula R.C.sub.6 H.sub.4.OH, in which R is a monovalent aliphatic hydrocarbon group having 2-6 carbon atoms selected from alkyl and alkenyl groups.
摘要翻译：提出了适用于制造半导体器件（例如具有高保真度的VLSI）的精细图案化的正性光致抗蚀剂组合物。该组合物包括：（A）100重量份通过三种酚类化合物和甲醛的特定三元混合物的缩合反应制备的酚醛清漆树脂; 和（B）20-60重量份的优选萘醌二叠氮磺酸和羟基化二苯甲酮化合物的酯的光敏剂。酚类混合物由10-45重量％的间甲酚，35-88重量％的对甲酚和2-30重量％的由通式R.C 6 H 4.OH表示的取代的苯酚组成，在其中R为选自烷基和烯基的2-6个碳原子的一价脂族烃基。

45. 发明授权

US4820621A Developer solution for positive-working photoresist compositions comprising a base and a non-ionic surfactant 失效
标题翻译：用于正性光致抗蚀剂组合物的显影剂溶液，其包含碱和非离子表面活性剂
公开(公告)号：US4820621A
公开(公告)日：1989-04-11
申请号：US67312
申请日：1987-06-26
申请人： Hatsuyuki Tanka , Yoshiyuki Sato , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hatsuyuki Tanka , Yoshiyuki Sato , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03C1/72 , G03C1/10 , G03F7/00 , G03F7/30 , G03F7/32 , H01L21/027 , H01L21/30 , G03C5/18 , G03F7/26
CPC分类号： G03F7/322
摘要： The aqueous developer solution for a positive-working photoresist composition comprises, as dissolved in an aqueous solvent, a water-soluble organic basic compound and a specific non-ionic surface active agent which may be an alkyl-substituted phenyl or naphthyl ether of polyoxyethyleneglycol in a specified concentration. The developer solution is advantageous in respect of the completeness of removal of film residua and scums from the substrate surface after development so that the patterned photoresist layer is imparted with greatly increased accuracy and fidelity of the pattern reproduction.
摘要翻译：用于正性光致抗蚀剂组合物的水性显影剂溶液包含溶解在水性溶剂中的水溶性有机碱性化合物和特定的非离子表面活性剂，其可以是聚氧乙烯二醇的烷基取代的苯基或萘基醚指定浓度。显影剂溶液在显影后从基材表面除去膜残余物和浮渣的完整性是有利的，使得图案化的光致抗蚀剂层具有大大提高的图案再现的精度和保真度。

46. 发明授权

US4784937A Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant 失效
标题翻译：用于正性光致抗蚀剂的显影液，其包含无金属离子的有机碱和阴离子表面活性剂
公开(公告)号：US4784937A
公开(公告)日：1988-11-15
申请号：US892646
申请日：1986-08-04
申请人： Hatsuyuki Tanaka , Hidekatsu Kohara , Yoshiyuki Sato , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
发明人： Hatsuyuki Tanaka , Hidekatsu Kohara , Yoshiyuki Sato , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
IPC分类号： G03F7/32
CPC分类号： G03F7/322
摘要： The aqueous developing solution of the invention for positive-working photoresist compositions contains, in addition to an organic basic compound free from metal ions, such as tetramethyl ammonium hydroxide and choline, as the principal ingredient, from 50 to 5000 ppm of an anionic or non-ionic fluorine-containing surface active agent of specific types. In comparison with conventional developing solutions without such a surface active agent, the inventive developing solution is advantageous in the uniformity of the patterned photoresist layer and higher sensitivity and smaller temperature dependency of development.
摘要翻译：本发明的正性光致抗蚀剂组合物的含水显影液除了含有金属离子的有机碱性化合物外，还含有氢氧化四甲基铵和胆碱作为主要成分，含有50-5000ppm阴离子或非离子表面活性剂非离子型含氟表面活性剂。与没有这种表面活性剂的常规显影溶液相比，本发明的显影溶液在图案化光致抗蚀剂层的均匀性方面是有利的，并且具有较高的灵敏度和较小的显影温度依赖性。

47. 发明授权

US5728504A Positive photoresist compositions and multilayer resist materials using the same 失效
标题翻译：正型光致抗蚀剂组合物和使用其的多层抗蚀剂材料
公开(公告)号：US5728504A
公开(公告)日：1998-03-17
申请号：US652389
申请日：1996-05-23
申请人： Hiroshi Hosoda , Satoshi Niikura , Atsushi Sawano , Tatsuya Hashiguchi , Kazuyuki Nitta , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hiroshi Hosoda , Satoshi Niikura , Atsushi Sawano , Tatsuya Hashiguchi , Kazuyuki Nitta , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/11 , G03F7/022 , G03F7/26 , H01L21/027 , G03F7/023
CPC分类号： G03F7/022
摘要： A positive photoresist composition comprising (A) an alkali-soluble resin and (B) a light-sensitive component comprising at least one compound represented by the following general formula (I): ##STR1## where R.sup.1, R.sup.2 and R.sup.3 are each independently a hydrogen atom, an alkyl group having 1-3 carbon atoms or an alkoxy group having 1-3 carbon atoms; R.sup.4 is a hydrogen atom or an alkyl group having 1-3 carbon atoms; a, b and c are an integer of 1-3; l, m and n are an integer of 1-3, in which at least part of the hydroxyl groups present are esterified with a quinonediazidosulfonic acid and a sulfonic acid which has a group represented by the following formula (II): --SO.sub.2 --R.sup.5 (II) where R.sup.5 is a substituted or unsubstituted alkyl group, an alkenyl group or a substituted or unsubstituted aryl group, thereby forming a mixed ester, and a multilayer resist material in which a positive photoresist layer formed of said positive photoresist composition is provided on an anti-reflective coating over a substrate are capable of forming high-resolution resist patterns with good cross-sectional profiles and permit a wider margin of exposure and better depth-of-focus characteristics.
摘要翻译：一种正性光致抗蚀剂组合物，其包含（A）碱溶性树脂和（B）包含至少一种由以下通式（I）表示的化合物的光敏性组分：其中R 1，R 2和R 3是各自独立地为氢原子，具有1-3个碳原子的烷基或具有1-3个碳原子的烷氧基; R4是氢原子或具有1-3个碳原子的烷基; a，b和c为1-3的整数; l，m和n是1-3的整数，其中存在的羟基的至少一部分与醌二叠氮磺酸和具有下式（II）表示的基团的磺酸酯化：-SO 2 -R 5 （II）其中R5是取代或未取代的烷基，烯基或取代或未取代的芳基，从而形成混合酯，以及多层抗蚀剂材料，其中由所述正性光致抗蚀剂组合物形成的正性光致抗蚀剂层设置在衬底上的抗反射涂层能够形成具有良好横截面轮廓的高分辨率抗蚀剂图案，并允许更宽的曝光余量和更好的聚焦深度特性。

48. 发明授权

US5604077A Positive-working photoresist composition comprising a novolac resin made in butyrolactone as a solvent 失效
标题翻译：正性光致抗蚀剂组合物，其包含在丁内酯作为溶剂制备的酚醛清漆树脂
公开(公告)号：US5604077A
公开(公告)日：1997-02-18
申请号：US603601
申请日：1996-02-21
申请人： Shinichi Kono , Hayato Ohno , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Shinichi Kono , Hayato Ohno , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/022 , C08G8/08 , C08L61/04 , C08L61/06 , G03F7/023 , H01L21/027
CPC分类号： G03F7/0236 , C08G8/08
摘要： Proposed is an improved positive-working photoresist composition for use in the photolithographic patterning works for the manufacture of semiconductor devices, which is capable of giving a patterned resist layer on a substrate surface having excellent resolution and heat resistance without formation of scum in the development treatment. The photoresist composition comprises: (a) an alkali-soluble novolac resin as a film-forming ingredient and (b) a naphthoquinone diazide group-containing compound as a photosensitizing ingredient, of which the novolac resin is a condensation product of a phenolic compound and an aldehyde compound, the condensation reaction being undertaken in a solvent system containing, in addition to water, .gamma.-butyrolactone or a combination of .gamma.-butyrolactone and a propyleneglycol monoalkyl ether in a limited proportion.
摘要翻译：提出了一种用于制造半导体器件的光刻图案化工艺中的改进的正性光致抗蚀剂组合物，其能够在显影处理中不形成浮渣的情况下在具有优异的分辨率和耐热性的基板表面上形成图案化的抗蚀剂层。光致抗蚀剂组合物包括：（a）作为成膜成分的碱溶性酚醛清漆树脂和（b）含萘醌二叠氮基的化合物作为光敏成分，其中酚醛清漆树脂是酚类化合物和醛化合物，缩合反应在除水中的γ-丁内酯或γ-丁内酯和丙二醇单烷基醚的组合之外还含有有限的比例进行。

49. 发明授权

US5518860A Positive-working quinonediazide photoresist composition containing hydroxyalkyl substituted pyridine compound 失效
标题翻译：含有羟基烷基取代的吡啶化合物的正性醌二叠氮化物光致抗蚀剂组合物
公开(公告)号：US5518860A
公开(公告)日：1996-05-21
申请号：US463887
申请日：1995-06-05
申请人： Satoshi Niikura , Jun Koshiyama , Tetsuya Kato , Kouichi Takahashi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Satoshi Niikura , Jun Koshiyama , Tetsuya Kato , Kouichi Takahashi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/022 , G03F7/085 , H01L21/027 , G03F7/023 , G03C1/61
CPC分类号： G03F7/0226
摘要： A positive-working photoresist composition comprising a cresol novolac resin as the film-forming agent and a quinonediazido group-containing compound as the photosensitizing agent is admixed with a limited amount of a hydroxyalkyl-substituted pyridine compound so that great improvements can be obtained in the adhesive bonding of the resist layer to the substrate surface and in the stability of the composition by storage still without the problem due to the sublimed material from the resist layer during the patterning process.
摘要翻译：将包含作为成膜剂的甲酚酚醛清漆树脂和含有醌二叠氮基的化合物作为光敏剂的正性光致抗蚀剂组合物与有限量的羟烷基取代的吡啶化合物混合，从而可以在通过存储，抗蚀剂层与基材表面的粘合粘合和组合物的稳定性，在图案化工艺期间由于来自抗蚀剂层的升华材料而没有问题。

50. 发明授权

US5180653A Electron beam-curable resist composition and method for fine patterning using the same 失效
标题翻译：电子束固化型抗蚀剂组合物及使用其的精细图案化方法
公开(公告)号：US5180653A
公开(公告)日：1993-01-19
申请号：US693664
申请日：1991-04-30
申请人： Masanori Miyabe , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Masanori Miyabe , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C08K5/3492 , C08L61/06
CPC分类号： C08K5/3492 , C08L61/06 , Y10S430/143
摘要： An electron beam-curable resist composition suitable for fine patterning works in the manufacturing process of semiconductor devices is proposed which is outstandingly stable in storage and capable of being developed using an aqueous alkaline developer solution without scums and giving a patterned resist layer with high contrast and orthogonal cross sectional profile of a line pattern. The composition comprises (A) a triazine compound, such as 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, (B) a cresol novolac resin, of which at least 30% by weight of the phenolic moiety is derived from m-cresol, and (C) an alkoxymethylated melamine resin in specified proportions of (B):(C) and (A):[(B)+(C)]. The sensitivity of the resist composition is greatly enhanced by a heat treatment of the resist layer at 90.degree.-140.degree. C. after patternwise irradiation with electron beams.
摘要翻译：提出了一种适用于半导体器件制造工艺中精细图案化的电子束固化型抗蚀剂组合物，其在储存中非常稳定，并且能够使用不含浮渣的碱性显影剂水溶液显影，并提供具有高对比度的图案化抗蚀剂层，线图案的正交横截面轮廓。组合物包含（A）三嗪化合物，例如2-（4-甲氧基苯基）-4,6-双（三氯甲基）-1,3,5-三嗪，（B）甲酚酚醛清漆树脂，其中至少30 酚类部分的重量百分比来自间甲酚，（C）（B）:( C）和（A）：[（B）+（C）]的规定比例的烷氧基甲基化三聚氰胺树脂。通过在用电子束图案照射之后，在90℃-140℃下对抗蚀剂层进行热处理，抗蚀剂组合物的灵敏度大大提高。

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