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41. 发明申请

US20130233706A1 AL-BASED ALLOY SPUTTERING TARGET AND PRODUCTION METHOD OF SAME 审中-公开
标题翻译：基于AL的合金喷射目标及其生产方法
公开(公告)号：US20130233706A1
公开(公告)日：2013-09-12
申请号：US13878334
申请日：2011-10-05
申请人： Katsushi Matsumoto , Katsutoshi Takagi , Yuichi Taketomi , Junichi Nakai , Hidetada Makino , Toshiaki Takagi
发明人： Katsushi Matsumoto , Katsutoshi Takagi , Yuichi Taketomi , Junichi Nakai , Hidetada Makino , Toshiaki Takagi
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , B22F3/115 , B22F3/15 , B22F3/24 , C22C1/0416 , C22C21/00 , C22F1/04 , C23C16/45504 , C23C16/4585 , C23C16/4586
摘要： There is provided an Al-based alloy sputtering target, which can provide an enhanced deposition rate (or sputtering rate) when the sputtering target is used, and which can preferably prevent the occurrence of splashes. The Al-based alloy sputtering target of the present invention includes Ta and may preferably include an Al—Ta-based intermetallic compound containing Al and Ta, which compound has a mean particle diameter of from 0.005 μm to 1.0 μm and a mean interparticle distance of from 0.01 μm to 10.0 μm.
摘要翻译：提供了一种Al系合金溅射靶，其可以在使用溅射靶时提供增强的沉积速率（或溅射速率），并且可以优选地防止飞溅的发生。本发明的Al系合金溅射靶包括Ta，并且优选包括含有Al和Ta的Al-Ta系金属间化合物，该化合物的平均粒径为0.005〜1.0μm，平均粒子间距离为从0.01毫米到10.0毫米。

42. 发明申请

US20110048936A1 AL-Ni-RARE EARTH ELEMENT ALLOY SPUTTERING TARGET 有权
标题翻译： AL-Ni稀土元素合金喷射目标
公开(公告)号：US20110048936A1
公开(公告)日：2011-03-03
申请号：US12861330
申请日：2010-08-23
申请人： Toshihiro KUGIMIYA , Katsutoshi Takagi , Hitoshi Matsuzaki , Kotaro Kitashita , Yoichiro Yoneda
发明人： Toshihiro KUGIMIYA , Katsutoshi Takagi , Hitoshi Matsuzaki , Kotaro Kitashita , Yoichiro Yoneda
IPC分类号： C23C14/14
CPC分类号： C22C1/0416 , B22F2003/248 , B22F2998/10 , B22F2999/00 , C22C21/00 , C23C14/3414 , B22F9/082 , B22F3/1208 , B22F3/15 , B22F3/17 , B22F3/18 , B22F3/24 , B22F2201/02
摘要： An Al-base alloy sputtering target consisting Ni and one or more rare earth elements, wherein there are 5.0×104/mm2 or more compounds whose aspect ratio is 2.5 or higher and whose equivalent diameter is 0.2 μm or larger, when a cross sectional surface perpendicular to the plane of the target is observed at a magnification of 2000 or higher.
摘要翻译：包含Ni和一种或多种稀土元素的Al基合金溅射靶，其中当纵横比为2.5以上且当量为0.2μm以上的化合物的截面为5.0×10 4 / mm 2以上时，以2000或更高的放大倍率观察垂直于靶平面的平面。

43. 发明申请

US20120181172A1 METAL OXIDE-METAL COMPOSITE SPUTTERING TARGET 审中-公开
标题翻译：金属氧化物金属复合溅射靶
公开(公告)号：US20120181172A1
公开(公告)日：2012-07-19
申请号：US13496899
申请日：2010-09-15
申请人： Hitoshi Matsuzaki , Katsutoshi Takagi , Norihiro Jiko , Masaya Ehira
发明人： Hitoshi Matsuzaki , Katsutoshi Takagi , Norihiro Jiko , Masaya Ehira
IPC分类号： C23C14/34 , C23C14/08
CPC分类号： G11B7/266 , C23C14/3414 , G11B2007/24302 , G11B2007/2432
摘要： Disclosed is a metal oxide-metal composite sputtering target which is useful for the formation of a recording layer for an optical information recording medium, said recording layer containing a metal oxide and a metal. Specifically disclosed is a composite sputtering target containing a metal oxide (A) and a metal (B), wherein the maximum value of the circle-equivalent diameter of the metal oxide (A) is controlled to 200 μm or less.
摘要翻译：公开了一种金属氧化物 - 金属复合溅射靶，其用于形成用于光学信息记录介质的记录层，所述记录层含有金属氧化物和金属。具体公开了包含金属氧化物（A）和金属（B）的复合溅射靶，其中金属氧化物（A）的圆当量直径的最大值被控制在200μm以下。

44. 发明申请

US20060091792A1 Copper alloy thin films, copper alloy sputtering targets and flat panel displays 审中-公开
标题翻译：铜合金薄膜，铜合金溅射靶和平板显示器
公开(公告)号：US20060091792A1
公开(公告)日：2006-05-04
申请号：US11235196
申请日：2005-09-27
申请人： Toshihiro Kugimiya , Katsufumi Tomihisa , Katsutoshi Takagi , Junichi Nakai
发明人： Toshihiro Kugimiya , Katsufumi Tomihisa , Katsutoshi Takagi , Junichi Nakai
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L23/53233 , C23C14/185 , G02F2001/136295 , H01J29/02 , H01J2211/225 , H01L27/124 , H01L2924/0002 , Y10T428/31678 , H01L2924/00
摘要： A Cu alloy thin film contains Fe and P with the balance being substantially Cu, in which the contents of Fe and P satisfy all the following conditions (1) to (3), and in which Fe2P is precipitated at grain boundaries of Cu after heat treatment at 200° C. to 500° C. for 1 to 120 minutes: 1.4NFe+8NP 1.0 (2) 12NFe+NP>0.5 (3) wherein NFe represents the content of Fe (atomic percent); and NP represents the content of P (atomic percent).
摘要翻译： Cu合金薄膜含有Fe和P，余量基本上为Cu，其中Fe和P的含量满足以下所有条件（1）至（3），其中Fe 2 P 在200℃至500℃热处理1〜120分钟后，在Cu的晶界处析出：<？在线公式描述=“在线公式”末端=“铅”→> 1.4N ＆lt;＆lt;＆lt;＆lt;＆lt;＆lt; 3＆gt;＆lt; 1.3（1）＆lt; -formulae description =“In-line Formulas”end =“lead”？> N＆lt;＆lt;＆lt;＆lt;＆lt; P＆lt; “In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 12N + N > 0.5（3）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中N Fe表示Fe含量（原子百分数） ; N P表示P（原子百分比）的含量。

45. 再颁专利

USRE43590E1 Aluminum alloy electrode for semiconductor devices 有权
标题翻译：半导体器件铝合金电极
公开(公告)号：USRE43590E1
公开(公告)日：2012-08-21
申请号：US11430302
申请日：2006-05-09
申请人： Seigo Yamamoto , Katsutoshi Takagi , Eiji Iwamura , Kazuo Yoshikawa , Takashi Oonishi
发明人： Seigo Yamamoto , Katsutoshi Takagi , Eiji Iwamura , Kazuo Yoshikawa , Takashi Oonishi
IPC分类号： H01L23/54
CPC分类号： H01L21/2855 , H01L23/53219 , H01L2924/0002 , Y10T428/12736 , H01L2924/00
摘要： Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150° to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 μΩcm is obtained. The target is made of an Al alloy containing the above elements.REEXAMINATION RESULTSThe questions raised in reexamination proceedings Nos. 90/007,822 and 90/007,883, filed Nov. 28, 2005 and Nov. 28, 2005 respectively, have been considered, and the results thereof are reflected in this reissue patent which constitutes the reexamination certificate required by 35 U.S.C. 307 as provided in 37 CFR 1.570(e) for ex parte reexaminations, and/or the reexamination certificate required by 35 U.S.C. 316 as provided in 37 CFR 1.997(e) for inter partes reexaminations.
摘要翻译：公开了一种能够抑制小丘的产生和降低电阻率的半导体器件用电极，其适用于使用薄膜晶体管的有源矩阵液晶显示器等; 其制作方法; 以及用于形成半导体器件用电极膜的溅射靶。用于半导体器件的电极由含有一种或多种选自Fe，Co，Ni，Ru，Rh和Ir的合金元素的Al合金制成，总量为0.1至10原子％，或选择一种或多种合金元素来自稀土元素，总量为0.05〜15原子％。制造半导体器件的电极的方法包括以下步骤：在基底上沉积上述元素溶解在Al基体中的Al合金膜; 并且通过在150℃至400℃的退火温度下退火Al合金膜，使溶解在Al基体中的所有元素的一部分沉淀为金属间化合物; 由此获得由电阻率小于20μΩ·cm·cm的Al合金膜制成的半导体器件用电极。目标由含有上述元素的Al合金制成。重审结果2005年11月28日和2005年11月28日提交的第90 / 007,822号和第90 / 007,883号复核程序中提出的问题已经被考虑，其结果反映在构成复审的重新发行专利中 35USC要求的证书根据37 CFR 1.570（e）规定，单方面复审，和/或35 U.S.C.所要求的复审证书。按照第37 CFR 1.997（e）条的规定进行跨部门重新审查。

46. 发明授权

US07665586B2 Crash box 有权
标题翻译：碰撞箱
公开(公告)号：US07665586B2
公开(公告)日：2010-02-23
申请号：US11340664
申请日：2006-01-27
申请人： Kenji Tamura , Yoshiaki Nakazawa , Michitaka Yoshida , Katsutoshi Takagi , Mitsutoshi Kano
发明人： Kenji Tamura , Yoshiaki Nakazawa , Michitaka Yoshida , Katsutoshi Takagi , Mitsutoshi Kano
IPC分类号： F16F7/12
CPC分类号： F16F7/123 , F16F7/12
摘要： A crash energy absorption member is provided which has excellent crash energy absorbing properties with the ability of repeated buckling in a stable manner, a high average load at the time of collapse, and the maximum load which is within a range which does not break other members.It is a crash energy absorption member which preferably has a transverse cross-sectional shape of an octagon and which is intended for absorbing impact energy by buckling in the lengthwise direction into a shape of bellows when it receives an impact load. With respect to at least one side forming the transverse cross-sectional shape, when the angle formed by the two sides which adjoin the opposing ends of the one side is α, the relationship between the length L1 of the one side and the distance L2 between the two furthest ends of the two sides interposing the one side satisfies the following equation: 0
摘要翻译：提供了一种碰撞能量吸收构件，其具有优异的碰撞能量吸收特性，具有以稳定的方式反复屈曲的能力，塌陷时的高平均载荷，以及不破坏其它构件的范围内的最大载荷。它是碰撞能量吸收构件，其优选地具有八边形的横截面形状，并且其用于通过在受到冲击载荷时沿长度方向弯曲成波纹形状而吸收冲击能量。关于形成横截面形状的至少一个侧面，当由与一侧相对的两端相邻的两侧形成的角度为α时，一侧的长度L1与两侧的距离L2之间的关系插入一侧的两侧的两个最远端满足以下等式：0

47. 发明授权

US07445097B2 Crash energy absorption member 有权
标题翻译：碰撞能量吸收构件
公开(公告)号：US07445097B2
公开(公告)日：2008-11-04
申请号：US11340651
申请日：2006-01-27
申请人： Kenji Tamura , Yoshiaki Nakazawa , Michitaka Yoshida , Katsutoshi Takagi , Mitsutoshi Kano
发明人： Kenji Tamura , Yoshiaki Nakazawa , Michitaka Yoshida , Katsutoshi Takagi , Mitsutoshi Kano
IPC分类号： F16F7/12
CPC分类号： F16F7/123 , F16F7/12
摘要： A crash energy absorption member capable of reducing the initial load without provision of a crushing bead and capable of achieving a sufficient amount of shock absorption with stable buckling behavior. The crash energy absorption member is formed from a tubular body which has a length L and a polygonal transverse cross-sectional shape with 2n corners due to having 2n ridge lines (wherein n is a natural number greater than or equal to 3) and 2n surfaces partitioned by these 2n ridge lines, and which absorbs impact energy by buckling when an impact load is applied to one end in the axial direction towards the other end, characterized in that some of the 2n ridge lines only exist in a region which extends from a position spaced by a distance h in the axial direction from the one end to the other end, and if the number of the remaining ridge lines which have a length L is m, the following equations are satisfied: h≦L×0.30 (1) 4≦m≦2×(n−1). (2)
摘要翻译：一种碰撞能量吸收构件，其能够在不设置破碎珠的情况下降低初始载荷，并且能够以稳定的屈曲行为实现足够量的减震。碰撞能量吸收构件由具有2n个角的长度L和多边形横截面形状的管状体形成，由于具有2n条脊线（其中n是大于或等于3的自然数）和2n个表面这些2n脊线划分，并且当冲击载荷沿轴向一端施加到另一端时通过屈曲来吸收冲击能量，其特征在于，2n脊线中的一些仅存在于从在从一端到另一端在轴向上隔开距离h的位置，并且如果长度为L的剩余脊线的数量为m，则满足以下等式：<β在线公式描述 =“在线公式”end =“lead”？> h <= Lx0.30（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line -formulae description =“In-line Formulas”end =“lead”？> 4 <= m <= 2x（n-1）。（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>

48. 发明申请

US20060275618A1 Display device 审中-公开
标题翻译：显示设备
公开(公告)号：US20060275618A1
公开(公告)日：2006-12-07
申请号：US11431580
申请日：2006-05-11
申请人： Toshihiro Kugimiya , Katsufumi Tomihisa , Aya Hino , Katsutoshi Takagi
发明人： Toshihiro Kugimiya , Katsufumi Tomihisa , Aya Hino , Katsutoshi Takagi
IPC分类号： B32B15/04 , B32B9/00
CPC分类号： G02F1/136286 , H01L27/12 , H01L27/124 , H01L29/458
摘要： A display device in which interconnection—electrode comprising a Cu alloy film having a lower electrical resistivity than Al alloy and a transparent conductive film are directly connected not by way of a refractory metal thin film, wherein the Cu alloy film contains Zn and/or Mg in a total amount from 0.1 to 3.0 at %, or Ni and/or Mn in a total amount from 0.1 to 5 at %, thereby enabling the direct connection at low resistivity between the Cu alloy film and the transparent electrode without using a barrier metal, and giving high display quality in a case of application, for example, to a liquid crystal display.
摘要翻译：一种显示装置，其中包括具有比Al合金低的电阻率的Cu合金膜和透明导电膜的互连电极不直接连接在难熔金属薄膜上，其中Cu合金膜含有Zn和/或Mg 总量为0.1〜3.0原子％，Ni和/或Mn总量为0.1〜5原子％，可以在Cu合金膜和透明电极之间以低电阻率直接连接而不使用阻挡金属并且在应用的情况下例如向液晶显示器提供高显示质量。

49. 发明申请

US20060226005A1 Aluminum-based sputtering targets 审中-公开
标题翻译：铝基溅射靶
公开(公告)号：US20060226005A1
公开(公告)日：2006-10-12
申请号：US11377266
申请日：2006-03-17
申请人： Katsutoshi Takagi , Toshihiro Kugimiya , Katsufumi Tomihisa
发明人： Katsutoshi Takagi , Toshihiro Kugimiya , Katsufumi Tomihisa
IPC分类号： C23C14/00
CPC分类号： H01J37/3429 , C23C14/3414
摘要： An Al-based sputtering target mainly containing Al has a total number of concave defects having largest depths of 0.2 μm or more and equivalent area diameters of 0.2 μm or more of 45000 or less per square millimeter of unit surface area of a surface of the sputtering target corresponding to a sputtering plane. Another Al-based sputtering target has a total number of concave defects having largest depths of 0.1 μm or more and equivalent area diameters of 0.5 μm or more of 15000 or less per square millimeter of unit surface area on the surface. These sputtering targets are reduced in time period and number of sputtering failures (a splash and/or an arc) occurring in their use, particularly at an early stage of their use.
摘要翻译：主要含有Al的Al基溅射靶具有溅射表面的每平方毫米单位表面积的最大深度为0.2μm以上，等效面积直径为0.2μm以上45000以下的凹陷缺陷的总数靶对应于溅射平面。另一Al基溅射靶具有表面上每平方毫米单位表面积最大深度为0.1μm或更大，等效面积直径为0.5μm或更大为15000或更小的凹陷缺陷总数。这些溅射靶在其使用中发生的时间和溅射失败次数（飞溅和/或电弧）减少，特别是在其使用的早期阶段。

50. 发明授权

US08163143B2 Al-Ni-La-Si system Al-based alloy sputtering target and process for producing the same 有权
标题翻译： Al-Ni-La-Si系Al基合金溅射靶及其制造方法
公开(公告)号：US08163143B2
公开(公告)日：2012-04-24
申请号：US12172442
申请日：2008-07-14
申请人： Katsutoshi Takagi , Yuki Iwasaki , Masaya Ehira , Akira Nanbu , Mototaka Ochi , Hiroshi Goto , Nobuyuki Kawakami
发明人： Katsutoshi Takagi , Yuki Iwasaki , Masaya Ehira , Akira Nanbu , Mototaka Ochi , Hiroshi Goto , Nobuyuki Kawakami
IPC分类号： C23C14/00
CPC分类号： C23C14/3414 , B22F2998/10 , C22C1/0491 , C22C21/00 , C22F1/04 , B22F9/082 , B22F3/115 , B22F3/15 , B22F3/17 , B22F3/18
摘要： The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.
摘要翻译：本发明涉及包含Ni，La和Si的Al-Ni-La-Si系Al基合金溅射靶，其中当在（a）中的（¼）t至（¾）t（t：厚度）用扫描电子显微镜观察垂直于溅射靶的平面的横截面为2000倍，（1）平均粒径为0.3μm〜3μm的Al-Ni系金属间化合物的总面积与 Al-Ni系金属间化合物主要由Al和Ni构成，Al-Ni体系金属间化合物的总面积为面积率的70％以上，和（2）相对于Al-Ni-La-Si体系金属间化合物的总面积，平均粒径为0.2μm〜2μm的Al-Ni-La-Si系金属间化合物的总面积为 Al-Ni-La-Si系金属间化合物主要由Al，Ni，La和Si组成，面积分数为70％以上。

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