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1. 发明申请

US20130233706A1 AL-BASED ALLOY SPUTTERING TARGET AND PRODUCTION METHOD OF SAME 审中-公开
标题翻译：基于AL的合金喷射目标及其生产方法
公开(公告)号：US20130233706A1
公开(公告)日：2013-09-12
申请号：US13878334
申请日：2011-10-05
申请人： Katsushi Matsumoto , Katsutoshi Takagi , Yuichi Taketomi , Junichi Nakai , Hidetada Makino , Toshiaki Takagi
发明人： Katsushi Matsumoto , Katsutoshi Takagi , Yuichi Taketomi , Junichi Nakai , Hidetada Makino , Toshiaki Takagi
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , B22F3/115 , B22F3/15 , B22F3/24 , C22C1/0416 , C22C21/00 , C22F1/04 , C23C16/45504 , C23C16/4585 , C23C16/4586
摘要： There is provided an Al-based alloy sputtering target, which can provide an enhanced deposition rate (or sputtering rate) when the sputtering target is used, and which can preferably prevent the occurrence of splashes. The Al-based alloy sputtering target of the present invention includes Ta and may preferably include an Al—Ta-based intermetallic compound containing Al and Ta, which compound has a mean particle diameter of from 0.005 μm to 1.0 μm and a mean interparticle distance of from 0.01 μm to 10.0 μm.
摘要翻译：提供了一种Al系合金溅射靶，其可以在使用溅射靶时提供增强的沉积速率（或溅射速率），并且可以优选地防止飞溅的发生。本发明的Al系合金溅射靶包括Ta，并且优选包括含有Al和Ta的Al-Ta系金属间化合物，该化合物的平均粒径为0.005〜1.0μm，平均粒子间距离为从0.01毫米到10.0毫米。

2. 发明申请

US20120325655A1 A1-BASED ALLOY SPUTTERING TARGET 审中-公开
标题翻译：基于A1的合金喷射目标
公开(公告)号：US20120325655A1
公开(公告)日：2012-12-27
申请号：US13581436
申请日：2011-02-25
申请人： Yuki Iwasaki , Katsushi Matsumoto , Toshiaki Takagi , Mamoru Nagao , Hidetada Makino
发明人： Yuki Iwasaki , Katsushi Matsumoto , Toshiaki Takagi , Mamoru Nagao , Hidetada Makino
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C22C21/00
摘要： The present invention provides a technique capable of suppressing generation of splash even at high-speed deposition by an Al-based alloy sputtering target containing Ni and a rare earth element, wherein when crystallographic orientations , , , and in a normal direction of each sputtering surface at a surface part of the Al-based alloy sputtering target, a ¼×t (t: thickness of the Al-based alloy sputtering target) part thereof and a ½×t part thereof are observed by an electron backscatter diffraction pattern method, the Al-based alloy sputtering target satisfies the requirement (1) that, when a total of area fractions of the ±15°, ±15° and ±15° is defined as R (as for Rat each part, the R at the surface part is defined as Ra, the R at the ¼×t part is defined as Rb, and the R at the ½×t part is defined as Rc), R is 0.35 or more and 0.80 or less; and the requirement (2) that each of the Ra, the Rb and the Rc falls in the range of ±20% of an average R value [Rave=(Ra+Rb+Rc)/3].
摘要翻译：本发明提供一种能够通过含有Ni和稀土元素的Al系合金溅射靶在高速沉积时抑制飞溅的技术，其中当晶体取向<001>，<011>，<111>时，在Al基合金溅射靶的表面部分的每个溅射表面的法线方向上，¼×t（t：Al基合金溅射靶的厚度）部分和½ 通过电子背散射衍射图法观察其×t部分，Al系合金溅射靶满足以下要求（1）：当<001>±15°，<011>±15°的面积分数并且<112>±15°被定义为R（对于大鼠每个部分，表面部分的R定义为Ra，¼×t部分的R定义为Rb，R在½×t 部分定义为Rc），R为0.35以上至0.80以下; 以及R a，R b和R c中的每一个落在平均R值[Rave =（Ra + Rb + Rc）/ 3]的±20％的范围内的要求（2）。

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