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41. 发明授权

US08878317B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08878317B2
公开(公告)日：2014-11-04
申请号：US13210678
申请日：2011-08-16
申请人： Tadaomi Daibou , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
发明人： Tadaomi Daibou , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
IPC分类号： H01L29/82 , H01L43/10 , H01F10/32 , H01L43/08 , H01L27/22
CPC分类号： H01L43/02 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.
摘要翻译：根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

42. 发明授权

US08778235B2 Colorant multimer, colored curable composition, color filter and method for producing the same, and solid-state image sensor, image display device, liquid crystal display device and organic EL display with the color filter 有权
标题翻译：着色剂多聚体，着色固化性组合物，滤色器及其制造方法以及固态图像传感器，图像显示装置，液晶显示装置和带有滤色器的有机EL显示器
公开(公告)号：US08778235B2
公开(公告)日：2014-07-15
申请号：US13498885
申请日：2010-09-28
申请人： Junichi Ito , Masaru Yoshikawa , Yuki Mizukawa , Kenta Ushijima , Shinichi Kanna , Haruki Inabe , Yoshihiko Fujie , Akiyoshi Goto , Yushi Kaneko , Hiroaki Idei
发明人： Junichi Ito , Masaru Yoshikawa , Yuki Mizukawa , Kenta Ushijima , Shinichi Kanna , Haruki Inabe , Yoshihiko Fujie , Akiyoshi Goto , Yushi Kaneko , Hiroaki Idei
IPC分类号： G02B5/23 , C08F2/50 , C09K11/06 , C08F220/60 , C08F220/36 , C09B69/10 , H05B33/12 , G03F7/00 , G03F7/105 , C09B57/10 , G02B5/22 , G03F1/00 , G02F1/1335 , H01L27/32 , G03F7/033 , G03F7/027
CPC分类号： C08F2/50 , C08F220/36 , C08F220/60 , C09B23/04 , C09B57/10 , C09B69/108 , C09K11/06 , C09K2211/1408 , C09K2211/188 , G02B5/22 , G02F1/133516 , G03F7/0007 , G03F7/027 , G03F7/033 , G03F7/0388 , G03F7/105 , H01L27/322 , H05B33/12
摘要： A colorant multimer includes, as a partial structure of a colorant moiety, a dipyrromethene metal complex compound or tautomer thereof obtained from: (i) a dipyrromethene compound represented by the following Formula (M); and (ii) a metal or a metal compound: wherein in Formula (M), R4, R5, R6, R7, R8, R9, and R10 each independently represent a hydrogen atom or a monovalent substituent.
摘要翻译：着色剂多聚体包括作为着色剂部分的部分结构的二吡咯亚甲基金属络合物或其互变异构体，其由以下物质获得：（i）由下式（M）表示的二吡咯亚甲基化合物; 和（ii）金属或金属化合物：其中在式（M）中，R 4，R 5，R 6，R 7，R 8，R 9和R 10各自独立地表示氢原子或一价取代基。

43. 发明授权

US08737122B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US08737122B2
公开(公告)日：2014-05-27
申请号：US13416076
申请日：2012-03-09
申请人： Daisuke Saida , Minoru Amano , Tazumi Nagasawa , Yuichi Ohsawa , Junichi Ito
发明人： Daisuke Saida , Minoru Amano , Tazumi Nagasawa , Yuichi Ohsawa , Junichi Ito
IPC分类号： G11C11/15 , G11C11/16
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a nonvolatile memory device includes a magnetic memory element and a control unit. The magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes a first ferromagnetic layer having a magnetization fixed, a second ferromagnetic layer having a magnetization variable and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second includes a third ferromagnetic layer having a magnetization rorated by a passed current to produce oscillation, a fourth ferromagnetic layer having a magnetization fixed and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers stacked with each other. A frequency of the oscillation changes in accordance with the direction of the magnetization of the second ferromagnetic layer. The control unit includes a reading unit reading out the magnetization of the second ferromagnetic layer.
摘要翻译：根据一个实施例，非易失性存储器件包括磁存储元件和控制单元。磁存储元件包括包括第一和第二堆叠单元的堆叠体。第一堆叠单元包括具有磁化固定的第一铁磁层，具有磁化变化的第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。第二铁磁层具有由通过的电流产生振荡的磁化的第三铁磁层，具有磁化固定的第四铁磁层和设置在彼此堆叠的第三和第四铁磁层之间的第二非磁性层。振荡的频率根据第二铁磁层的磁化方向而变化。控制单元包括读出第二铁磁层的磁化的读取单元。

44. 发明授权

US08716034B2 Method of manufacturing magnetic memory 失效
标题翻译：制造磁记忆体的方法
公开(公告)号：US08716034B2
公开(公告)日：2014-05-06
申请号：US13226868
申请日：2011-09-07
申请人： Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
发明人： Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , H01L29/82
摘要： According to one embodiment, a method of manufacturing a magnetic memory, the method includes forming a first magnetic layer having a variable magnetization, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization, forming a hard mask layer as a mask on the second magnetic layer, patterning the second magnetic layer by using the mask of the hard mask layer, and executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning.
摘要翻译：根据一个实施例，一种制造磁存储器的方法，该方法包括形成具有可变磁化强度的第一磁性层，在第一磁性层上形成隧道势垒层，在隧道势垒层上形成第二磁性层，具有不变磁化的磁性层，在第二磁性层上形成硬掩模层作为掩模，通过使用硬掩模层的掩模对第二磁性层进行构图，并使用硬掩模的掩模执行GCIB照射层，图案后。

45. 发明授权

US08680632B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08680632B2
公开(公告)日：2014-03-25
申请号：US13310154
申请日：2011-12-02
申请人： Tadaomi Daibou , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
发明人： Tadaomi Daibou , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
IPC分类号： H01L29/82 , G11C11/00
CPC分类号： H01L43/10 , H01L23/528 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L2924/0002 , H01L2924/00
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，其形成在所述基底层上，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第一磁性膜，所述第一磁性膜包括Mn x Ga 100-x（45≤n1E; x <64原子％）; 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第二磁性膜，所述第二磁性膜包括MnyGa100-y（45＆lt; IL1; y <64原子％），。第一和第二磁性层包括彼此不同的Mn组成比，第一磁性层的磁化方向可以通过第一非磁性层在第一磁性层和第二磁性层之间流动的电流而改变。

46. 发明申请

US20130317654A1 AIR-CONDITIONING CONTROL SYSTEM AND AIR-CONDITIONING CONTROL METHOD 审中-公开
标题翻译：空调控制系统和空调控制方法
公开(公告)号：US20130317654A1
公开(公告)日：2013-11-28
申请号：US13981744
申请日：2012-01-18
申请人： Yasuhiro Kashirajima , Junichi Ito , Ryoji Shimokawa , Masakatsu Senda
发明人： Yasuhiro Kashirajima , Junichi Ito , Ryoji Shimokawa , Masakatsu Senda
IPC分类号： G05D23/19
CPC分类号： G05D23/19 , F24F11/30 , G05B15/02 , G05B2219/2642
摘要： An air-conditioning control system is equipped with: a first client server containing a job management program that manages jobs for multiple electronic devices; a second client server that determines the required amount of cooling on the basis of the power information for the multiple electronic devices that is output from this first client server, and outputs information that controls the operation of multiple air-conditioners; an integrated management server that inputs information from the first and second client servers; and a control board that controls the operation of the air-conditioners on the basis of commands from the integrated management server. An environment optimization control program, which calculates the temperature distribution and airflow in an electronic device facility when the operation of the air-conditioners is controlled on the basis of the input power information for the electronic devices and the required amount of cooling, is installed in the integrated management server.
摘要翻译：空调控制系统配备有：第一客户端服务器，其包含管理多个电子设备的作业的作业管理程序; 第二客户端服务器，根据从该第一客户端服务器输出的多个电子设备的功率信息，确定所需的冷却量，并输出控制多个空调机的运行的信息; 一个从第一和第二客户端服务器输入信息的综合管理服务器; 以及基于来自综合管理服务器的命令来控制空调机的操作的控制板。一种环境优化控制程序，其在基于电子设备的输入功率信息和所需的冷却量的基础上控制空调器的操作时计算电子设备设施中的温度分布和气流，安装在综合管理服务器。

47. 发明申请

US20130249024A1 MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE 有权
标题翻译：磁记忆元件和非易失性存储器件
公开(公告)号：US20130249024A1
公开(公告)日：2013-09-26
申请号：US13601343
申请日：2012-08-31
申请人： Daisuke SAIDA , Minoru Amano , Junichi Ito
发明人： Daisuke SAIDA , Minoru Amano , Junichi Ito
IPC分类号： H01L43/06
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/228 , H01L43/12
摘要： According to one embodiment, a magnetic memory element includes a stacked body and a conductive shield. The stacked body includes first and second stacked units. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first ferromagnetic layer has a fixed magnetization in a first direction. A magnetization direction of the second ferromagnetic layer is variable in a second direction. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit includes a third ferromagnetic layer stacked with the first stacked unit in a stacking direction of the first stacked unit. A magnetization direction of the third ferromagnetic layer is variable in a third direction. The conductive shield is opposed to at least a part of a side surface of the second stacked unit. An electric potential of the conductive shield is controllable.
摘要翻译：根据一个实施例，磁存储元件包括堆叠体和导电屏蔽。堆叠体包括第一和第二堆叠单元。第一堆叠单元包括第一和第二铁磁层和第一非磁性层。第一铁磁层在第一方向上具有固定的磁化强度。第二铁磁层的磁化方向在第二方向上是可变的。第一非磁性层设置在第一和第二铁磁层之间。第二堆叠单元包括在第一堆叠单元的层叠方向上与第一堆叠单元堆叠的第三铁磁层。第三铁磁层的磁化方向在第三方向上是可变的。导电屏蔽与第二堆叠单元的侧表面的至少一部分相对。导电屏蔽层的电位是可控的。

48. 发明授权

US08514353B2 Color filter and electronic display device 有权
标题翻译：彩色滤光片和电子显示装置
公开(公告)号：US08514353B2
公开(公告)日：2013-08-20
申请号：US13052726
申请日：2011-03-21
申请人： Naoyoshi Yamada , Ryuji Saneto , Junichi Ito , Shigekazu Suzuki
发明人： Naoyoshi Yamada , Ryuji Saneto , Junichi Ito , Shigekazu Suzuki
IPC分类号： G02F1/1335
CPC分类号： G02B5/201
摘要： A color filter including a red (R) pixel, a green (G) pixel and a blue (B) pixel, wherein at least one of the red (R) pixel, the green (G) pixel and the blue (B) pixel includes one or more kinds of dyes and one or more kinds of pigments and wherein areas of the red (R) pixel, the green (G) pixel and the blue (B) pixel are not the same.
摘要翻译：一种包括红色（R）像素，绿色（G）像素和蓝色（B））像素的滤色器，其中红色（R）像素，绿色（G）像素和蓝色（B）像素中的至少一个包括一种或多种染料和一种或多种颜料，并且其中红色（R）像素，绿色（G）像素和蓝色（B）像素的区域不相同。

49. 发明申请

US20130069182A1 MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND MAGNETORESISTIVE EFFECT ELEMENT MANUFACTURING METHOD 有权
标题翻译：磁阻效应元件，磁记忆和磁阻效应元件制造方法
公开(公告)号：US20130069182A1
公开(公告)日：2013-03-21
申请号：US13419011
申请日：2012-03-13
申请人： Yuichi OHSAWA , Tadaomi Daibou , Yushi Kato , Eiji Kitagawa , Saori Kashiwada , Minoru Amano , Junichi Ito
发明人： Yuichi OHSAWA , Tadaomi Daibou , Yushi Kato , Eiji Kitagawa , Saori Kashiwada , Minoru Amano , Junichi Ito
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L29/82 , B82Y40/00 , G11C11/161 , H01F10/126 , H01F10/3286 , H01F41/303 , H01L27/228 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive effect element includes a first magnetic film having magnetic anisotropy and an invariable magnetization direction in a direction perpendicular to a film plane, a second magnetic film having magnetic anisotropy and a variable magnetization direction in the direction perpendicular to the film plane, and a nonmagnetic film between the first magnetic film and the second magnetic film. At least one of the first and second magnetic films includes a first magnetic layer. The first magnetic layer includes a rare earth metal, a transition metal, and boron.
摘要翻译：根据一个实施例，磁阻效应元件包括在垂直于膜平面的方向上具有磁各向异性和不变磁化方向的第一磁性膜，在垂直于膜的方向上具有磁各向异性和可变磁化方向的第二磁性膜平面和第一磁性膜与第二磁性膜之间的非磁性膜。第一和第二磁性膜中的至少一个包括第一磁性层。第一磁性层包括稀土金属，过渡金属和硼。

50. 发明授权

US08385791B2 Developer regulating member, developing device, image forming apparatus and manufacturing method of developer regulating member 有权
标题翻译：显影剂调节构件，显影装置，图像形成装置以及显影剂调节构件的制造方法
公开(公告)号：US08385791B2
公开(公告)日：2013-02-26
申请号：US12659075
申请日：2010-02-24
申请人： Junichi Ito , Yukiyoshi Oda , Masahiro Kawano , Kazuhisa Fukamachi
发明人： Junichi Ito , Yukiyoshi Oda , Masahiro Kawano , Kazuhisa Fukamachi
IPC分类号： G03G15/08
CPC分类号： G03G15/0812
摘要： A developer regulating member regulates a thickness of a layer of a developer on a surface of a developer bearing body. The developer has a degree of circularity in a range from 0.94 to 0.97. The developer regulating member includes a resilient plate member composed of a metal material and having a bent portion. An outer surface of the bent portion contacts the surface of the developer bearing body so that a ridge line of the outer surface of the bent portion crosses a moving direction of the surface of the developer bearing body. A curvature radius R (μm) of the outer surface of the bent portion and a mean crystal grain diameter D (μm) of the metal material satisfy the relationship: 60×10−3×R−11≦D≦93.75×10−3×R−6.875.
摘要翻译：显影剂调节构件调节显影剂承载体的表面上的显影剂层的厚度。开发商的圆度在0.94至0.97之间。显影剂调节构件包括由金属材料构成并具有弯曲部分的弹性板构件。弯曲部的外表面与显影剂承载体的表面接触，使得弯曲部的外表面的脊线与显影剂承载体的表面的移动方向相交。弯曲部分的外表面的曲率半径R（μm）和金属材料的平均晶粒直径D（μm）满足关系：60×10-3×R-11＆nlE; D＆nlE; 93.75×10-3 ×R-6.875。

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