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41. 发明授权

US06968288B2 Method for detection of photolithographic defocus 失效
标题翻译：光刻散焦检测方法
公开(公告)号：US06968288B2
公开(公告)日：2005-11-22
申请号：US10604610
申请日：2003-08-04
申请人： Dennis L. Macaluso , Richard A. Phelps , Charles A. Whiting
发明人： Dennis L. Macaluso , Richard A. Phelps , Charles A. Whiting
IPC分类号： G01N21/00 , G03B27/42 , G03F7/20 , G06F15/00 , G06F19/00
CPC分类号： G03F7/70783
摘要： The present invention relates to determining the location of a defect source which results in a localized elevation on the surface topography of a substrate such as, for example, a silicon wafer. The wafer is placed on a chuck of a semiconductor process tool such as, for example, a photolithographic tool. The upper surface of the wafer is processed by the photolithographic tool to obtain topography measurements. The topography measurements are analyzed to detect the presence of the localized elevation on the upper surface of the wafer. Once the presence of the localized elevation is detected, calculations are performed using the topography measurements to determine whether the source of the localized elevation results from the chuck.
摘要翻译：本发明涉及确定导致在例如硅晶片的衬底的表面形貌上局部升高的缺陷源的位置。将晶片放置在半导体工艺工具的卡盘上，例如光刻工具。通过光刻工具处理晶片的上表面以获得地形测量。分析地形测量以检测晶片上表面上局部高程的存在。一旦检测到局部高程的存在，则使用地形测量来执行计算，以确定是否来自卡盘的局部高程的源。

42. 发明授权

US5635003A Cold sealing process for soft trim products 失效
标题翻译：软装饰产品的冷封工艺
公开(公告)号：US5635003A
公开(公告)日：1997-06-03
申请号：US364555
申请日：1994-12-27
申请人： Richard A. Phelps
发明人： Richard A. Phelps
IPC分类号： B29C35/04 , B29C35/12 , B29C65/02 , B60N2/28 , B32B31/20
CPC分类号： B29C66/433 , B29C65/02 , B29C65/04 , B29C65/106 , B29C66/436 , B60N2/28 , B60N2/286 , B29C35/045 , B29C35/12 , B29C65/1412 , B29C66/45 , B29C66/729 , B29C66/8322 , B29L2009/00 , B29L2031/771 , Y10T156/1044
摘要： To form a prebonded composite structure, a laminate composite is prepared by positioning a first layer of heat-activated adhesive between a first fabric layer and a second side of a pad and a second fabric layer is positioned adjacent a second side of the pad. The laminate composite is heated to produce a heated laminate composite and the heated laminate composite is positioned between an upper mold and a lower mold. The laminate composite is compressed between the upper and lower molds, thereby compressing the first layer of heat-activated adhesive between the pad and the first fabric layer. In one application, dielectric heat is applied to the laminate composite during the step of compressing the laminate composite.
摘要翻译：为了形成预粘结复合结构，通过将第一层热活化粘合剂定位在第一织物层和垫的第二侧之间来制备层压复合材料，并且第二织物层邻近垫的第二侧定位。将层压复合体加热以产生加热的层压复合材料，并将加热的层压复合材料定位在上模和下模之间。层压复合材料在上模和下模之间被压缩，从而在衬垫和第一织物层之间压缩第一层热活化粘合剂层。在一个应用中，在压制层压复合材料的步骤期间，将介电热施加到层压复合材料。

43. 发明授权

US5562797A Method and apparatus for producing trim panels 失效
标题翻译：用于生产装饰板的方法和装置
公开(公告)号：US5562797A
公开(公告)日：1996-10-08
申请号：US262864
申请日：1994-06-21
申请人： Richard A. Phelps
发明人： Richard A. Phelps
IPC分类号： B29C63/02 , B29C63/04 , B32B31/00
CPC分类号： B29C63/04 , B29C63/025 , B29C2043/186 , B29C2063/022 , B29C2793/0009 , B29L2031/3014 , Y10T156/1028 , Y10T156/1054 , Y10T156/108 , Y10T156/12 , Y10T428/24521 , Y10T428/24537
摘要： To form a seam of attractive appearance, a heated platen having a shaped lip acts to engage and press the central surface of an adhesively-backed sheet of a polymeric fabric against the top appearance surface of a panel and the peripheral edge of the sheet into a groove formed in the surface, the platen activating the adhesive and the lip forcing a potion of the adhesive inwardly adjacent to the sheet edge against one wall of the groove. An insertion blade presses a portion of the sheet edge towards the bottom of the groove, the blade acting as a heat shield to space and protect the other wall of the groove from the heated platen.
摘要翻译：为了形成具有吸引人的外观的接缝，具有成形唇缘的加热台板用于将聚合物织物的粘合背衬片材的中心表面接合并挤压到面板的顶部外观表面和片材的周边边缘上，形成为形成在表面中的凹槽，压板启动粘合剂和唇部，迫使胶粘剂向内靠近片材边缘抵靠凹槽的一个壁。插入刀片将片材边缘的一部分压向凹槽的底部，所述刀片用作隔热板以保持空间并且保护凹槽的另一壁免受加热的压板的影响。

44. 发明授权

US4955571A Dual action cupholder 失效
标题翻译：双作用杯座
公开(公告)号：US4955571A
公开(公告)日：1990-09-11
申请号：US437252
申请日：1989-11-21
申请人： Brian S. Lorence , Richard A. Phelps
发明人： Brian S. Lorence , Richard A. Phelps
IPC分类号： A47C7/62 , A47G23/00 , B60N3/10 , B60R7/04 , B65D25/20
CPC分类号： B60N3/102
摘要： A container holder having a shelf slidingly disposed in a housing, the shelf having a container holder. The shelf preferably is mounted so that it can both slide in and out of the housing and rotate about an axis other than the central axis of the housing. In one embodiment, two shelves are mounted one over the other in a single housing such that the shelves rotate away from each other when moved out of the housing. In another embodiment, two shelves are mounted side by side in a single housing.
摘要翻译：具有滑动地设置在壳体中的搁架的容器保持架，所述搁架具有容器保持器。搁架优选地被安装成使得其能够滑入和移出壳体并围绕除壳体的中心轴线之外的轴线旋转。在一个实施例中，两个搁架彼此一个地安装在单个壳体中，使得当移出壳体时，架子彼此远离。在另一个实施例中，两个搁架并排安装在单个外壳中。

45. 发明授权

US4907775A Container holder 失效
标题翻译：集装箱架
公开(公告)号：US4907775A
公开(公告)日：1990-03-13
申请号：US312086
申请日：1989-02-17
申请人： Brian S. Lorence , Richard A. Phelps
发明人： Brian S. Lorence , Richard A. Phelps
IPC分类号： A47C7/62 , B60N3/10
CPC分类号： B60N3/102
摘要： A container holder (2) for use with a support (4) including a frame (8) slidable within a housing (6) movable between a vertical, storage position, and a horizontal, operational position. The housing (6) is a box-like configuration having a slot (18) formed at one end. The frame (8) includes an integral member (26) having an opening (28) to accommodate beverage containers such as cans and cups. When in the storage position, the frame (8) is retained within the housing (6) in a vertical position. As the frame (8) moves to its operational position, it is guided through the slot (18) and pivots to a horizontal, operational position, generally perpendicular to its vertical, storage position. This operation enables the container holder (2) to be conveniently stored in a narrow space. 9
摘要翻译：一种用于与支撑件（4）一起使用的容器保持器（2），其包括可在垂直，存储位置和水平操作位置之间移动的壳体（6）内滑动的框架（8）。壳体（6）是在一端形成有槽（18）的盒状构造。框架（8）包括具有开口（28）的整体构件（26），以容纳诸如罐和杯子的饮料容器。当处于存储位置时，框架（8）在垂直位置处被保持在壳体（6）内。当框架（8）移动到其操作位置时，其被引导通过狭槽（18）并且枢转到水平的操作位置，大体上垂直于其垂直的存储位置。该操作使得容器保持器（2）能够方便地存储在狭窄的空间中。

46. 发明授权

US4686741A Padded automotive casket handle 失效
标题翻译：垫圈汽车棺材手柄
公开(公告)号：US4686741A
公开(公告)日：1987-08-18
申请号：US834005
申请日：1986-02-27
申请人： Ronald D. Moore , James D. Kavanaugh , Richard A. Phelps , Michael C. Howard
发明人： Ronald D. Moore , James D. Kavanaugh , Richard A. Phelps , Michael C. Howard
IPC分类号： B60N3/02 , E05B1/00 , E05B5/00 , E05B65/20 , E05B5/02
CPC分类号： B60N3/02 , E05B5/00 , E05B1/0015 , E05B85/10 , Y10S16/18 , Y10T16/50 , Y10T16/515
摘要： An automotive casket handle includes a generally U-shaped frame, pivotally mounted to a support surface, and inside and outside cushion members secured to recesses in the frame. Each cushion member includes a structural strip, typically of steel, a cover, typically of preformed vinyl, and a foam strip positioned between the structural strip and the cover. The edges of the cover are captured between the structural strip and the frame. Thus, the exposed surface of the cover is smooth and seamless with rounded edges. One cushion member is secured to the frame by bendable tabs extending from the structural strip, passing through tab openings in the frame and then bent against the frame. The other cushion member is connected to the frame by the engagement of studs, extending from the structural strip, into push lock fasteners mounted to the frame.
摘要翻译：汽车棺材手柄包括大致U形的框架，枢转地安装到支撑表面，以及固定到框架中的凹部的内部和外部缓冲构件。每个缓冲构件包括通常为钢的结构带，通常为预成型的乙烯基的盖，以及位于结构带和盖之间的泡沫条。盖的边缘被捕获在结构条和框架之间。因此，盖的暴露表面是平滑无缝的，具有圆形边缘。一个缓冲构件通过从结构带延伸的可弯曲翼片固定到框架上，穿过框架中的突片开口，然后相对于框架弯曲。另一个缓冲构件通过从结构带延伸的螺栓与安装到框架的推动锁紧件的接合而连接到框架。

47. 发明授权

US08748285B2 Noble gas implantation region in top silicon layer of semiconductor-on-insulator substrate 有权
标题翻译：绝缘体上半导体衬底顶硅层中的高气体注入区
公开(公告)号：US08748285B2
公开(公告)日：2014-06-10
申请号：US13280681
申请日：2011-11-28
申请人： Alan B. Botula , William F. Clark, Jr. , Richard A. Phelps , BethAnn Rainey , Yun Shi , James A. Slinkman
发明人： Alan B. Botula , William F. Clark, Jr. , Richard A. Phelps , BethAnn Rainey , Yun Shi , James A. Slinkman
IPC分类号： H01L21/76
CPC分类号： H01L21/84 , H01L27/1203
摘要： A semiconductor structure includes a semiconductor-on-insulator substrate, the semiconductor-on-insulator substrate comprising a handle wafer, a buried oxide (BOX) layer on top of the handle wafer, and a top silicon layer on top of the BOX layer; and an implantation region located in the top silicon layer, the implantation region comprising a noble gas.
摘要翻译：半导体结构包括绝缘体上半导体衬底，绝缘体上半导体衬底包括处理晶片，处理晶片顶部的掩埋氧化物（BOX）层和位于BOX层顶部的顶部硅层; 以及位于顶部硅层中的注入区域，该注入区域包括惰性气体。

48. 发明授权

US08598660B2 Stress enhanced LDMOS transistor to minimize on-resistance and maintain high breakdown voltage 有权
公开(公告)号：US08598660B2
公开(公告)日：2013-12-03
申请号：US13150612
申请日：2011-06-01
申请人： Renata Camillo-Castillo , Erik Mattias Dahlstrom , Robert J. Gauthier, Jr. , Ephrem G. Gebreselasie , Richard A. Phelps , Jed Hickory Rankin , Yun Shi
发明人： Renata Camillo-Castillo , Erik Mattias Dahlstrom , Robert J. Gauthier, Jr. , Ephrem G. Gebreselasie , Richard A. Phelps , Jed Hickory Rankin , Yun Shi
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66492 , H01L29/0653 , H01L29/1045 , H01L29/66659 , H01L29/66689 , H01L29/7816 , H01L29/7835 , H01L29/7843
摘要： A lateral diffused metal-oxide-semiconductor field effect transistor (LDMOS transistor) employs a stress layer that enhances carrier mobility (i.e., on-current) while also maintaining a high breakdown voltage for the device. High breakdown voltage is maintained, because an increase in doping concentration of the drift region is minimized. A well region and a drift region are formed in the substrate adjacent to one another. A first shallow trench isolation (STI) region is formed on and adjacent to the well region, and a second STI region is formed on and adjacent to the drift region. A stress layer is deposited over the LDMOS transistor and in the second STI region, which propagates compressive or tensile stress into the drift region, depending on the polarity of the stress layer. A portion of the stress layer can be removed over the gate to change the polarity of stress in the inversion region below the gate.

49. 发明授权

US08536035B2 Silicon-on-insulator substrate and method of forming 失效
标题翻译：绝缘体上硅衬底及其成型方法
公开(公告)号：US08536035B2
公开(公告)日：2013-09-17
申请号：US13363603
申请日：2012-02-01
申请人： Alan B. Botula , Mark D. Jaffe , Alvin J. Joseph , Kenneth F. McAvey , Gerd Pfeiffer , Richard A. Phelps
发明人： Alan B. Botula , Mark D. Jaffe , Alvin J. Joseph , Kenneth F. McAvey , Gerd Pfeiffer , Richard A. Phelps
IPC分类号： H01L21/425
CPC分类号： H01L21/76254
摘要： Silicon-on-insulator (SOI) structures and related methods of forming such structures. In one case, a method includes providing a silicon-on-insulator (SOI) handle substrate having: a substantially uniform resistivity profile along a depth of the handle substrate; and an interstitial oxygen (Oi) concentration of less than approximately 10 parts per million atoms (ppma). The method further includes counter-doping a surface region of the handle, causing the surface region to have a resistivity greater than approximately 3 kOhm-cm, and joining the surface region of the handle substrate with a donor wafer.
摘要翻译：绝缘体上硅（SOI）结构和形成这种结构的相关方法。在一种情况下，一种方法包括提供绝缘体上硅（SOI）手柄衬底，其具有：沿着手柄衬底的深度的基本均匀的电阻率分布; 和间隙氧（Oi）浓度小于约10ppm（ppma）。所述方法还包括对所述手柄的表面区域进行反掺杂，使所述表面区域具有大于约3kOhm-cm的电阻率，并且将所述手柄衬底的表面区域与施主晶片接合。

50. 发明申请

US20130005157A1 SEMICONDUCTOR-ON-INSULATOR SUBSTRATE AND STRUCTURE INCLUDING MULTIPLE ORDER RADIO FREQUENCY HARMONIC SUPRESSING REGION 有权
标题翻译：半导体绝缘体基板和包括多个无线电频率谐波抑制区域的结构
公开(公告)号：US20130005157A1
公开(公告)日：2013-01-03
申请号：US13608314
申请日：2012-09-10
申请人： Joseph R. Greco , Kevin Munger , Richard A. Phelps , Jennifer C. Robbins , William Savaria , James A. Slinkman , Randy L. Wolf
发明人： Joseph R. Greco , Kevin Munger , Richard A. Phelps , Jennifer C. Robbins , William Savaria , James A. Slinkman , Randy L. Wolf
IPC分类号： H01L21/265
CPC分类号： H01L21/7624 , H01L21/26506 , H01L21/84 , H01L27/1203
摘要： A semiconductor-on-insulator substrate and a related semiconductor structure, as well as a method for fabricating the semiconductor-on-insulator substrate and the related semiconductor structure, provide for a multiple order radio frequency harmonic suppressing region located and formed within a base semiconductor substrate at a location beneath an interface of a buried dielectric layer with the base semiconductor substrate within the semiconductor-on-insulator substrate. The multiple order radio frequency harmonic suppressing region may comprise an ion implanted atom, such as but not limited to a noble gas atom, to provide a suppressed multiple order radio frequency harmonic when powering a radio frequency device, such as but not limited to a radio frequency complementary metal oxide semiconductor device (or alternatively a passive device), located and formed within and upon a surface semiconductor layer within the semiconductor structure.
摘要翻译：绝缘体上半导体衬底和相关半导体结构以及绝缘体上半导体衬底和相关半导体结构的制造方法提供了一种位于并形成在基底半导体内的多阶射频谐波抑制区域在绝缘体上半导体衬底内的掩埋介质层与基底半导体衬底的界面下方的位置处的衬底。多级射频谐波抑制区域可以包括离子注入原子，例如但不限于稀有气体原子，以在对射频设备供电时提供抑制的多阶射频谐波，例如但不限于无线电位于和形成在半导体结构内的表面半导体层内和之上的高频互补金属氧化物半导体器件（或替代地，无源器件）。

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