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41. 发明申请

US20070193430A1 Restringing device for stringed musical instruments 审中-公开
标题翻译：用于弦乐器的装置
公开(公告)号：US20070193430A1
公开(公告)日：2007-08-23
申请号：US11359829
申请日：2006-02-22
申请人： Jin Jang
发明人： Jin Jang
IPC分类号： G10D3/00
CPC分类号： G10D3/006
摘要： A restringing device for a stringed musical instrument includes an elongated housing including a first end and a second end, a driving shaft rotatably attached to the first end, a tuning socket that receives a tuning peg of the instrument and engages with the driving shaft, a string cutter that cuts excess length of a string for the instrument, and a bridge pin puller that pulls out a bridge pin of the instrument. The rotating speed and the torque of the driving shaft are adjustable, and the rotation direction of the driving shaft is selectable. Various sizes and shapes of tuning sockets are provided and engage with the driving socket interchangeably. The rotation speed of the driving shaft is controllable in a fast winding mode and a fine tuning mode. The driving shaft stops when the tension of a string that is restringed reaches a threshold.
摘要翻译：用于弦乐器的限制装置包括细长壳体，其包括第一端和第二端，可旋转地附接到第一端的驱动轴，接收仪器的调音栓并与驱动轴接合的调音座，弦乐器切割器可以切割仪器的弦线的多余长度，以及拉出仪器桥接引脚的桥接器拔出器。驱动轴的旋转速度和扭矩是可调节的，并且驱动轴的旋转方向是可选择的。提供各种尺寸和形状的调音插座，可互换地与驱动插座接合。驱动轴的旋转速度可以在快速卷绕模式和微调模式中控制。当被限制的弦的张力达到阈值时，驱动轴停止。

42. 发明申请

US20070115207A1 Display with a window assembly and a mobile phone having the same 审中-公开
标题翻译：显示窗口组件和具有相同的移动电话
公开(公告)号：US20070115207A1
公开(公告)日：2007-05-24
申请号：US11544207
申请日：2006-10-05
申请人： Jin Jang , Jae Jung , Yong Kim , Hyo Song , Hwan Lim
发明人： Jin Jang , Jae Jung , Yong Kim , Hyo Song , Hwan Lim
IPC分类号： G09G3/00 , H04B1/38
CPC分类号： G02F1/133308 , G02F1/133608 , G02F2201/503 , G02F2202/28 , G06F1/1616 , G06F1/1637 , H04M1/0214 , H04M1/0266
摘要： A display with a window assembly includes a display unit and a backlight unit on the a first side of the display unit. The backlight unit has a housing unit enclosing. at least a portion of the display unit, exposing a second side of the display unit. The housing unit has at least one protrusion protruding toward the exposed, second side of the display unit. A window member closely adheres to the housing unit and the exposed second side of the display unit, and is coupled with the protrusion. An adhesion unit is arranged between the window member and the housing unit of the backlight to adhere the window member to the housing unit. A case unit has an opening exposing the window member, and has a stepped part on an opening edge of the opening. The stepped part is coupled with the window member.
摘要翻译：具有窗口组件的显示器包括在显示单元的第一侧上的显示单元和背光单元。背光单元具有封闭单元。显示单元的至少一部分，暴露显示单元的第二侧。壳体单元具有朝向显示单元的暴露的第二侧突出的至少一个突起。窗构件紧密地附着在显示单元的壳体单元和暴露的第二侧上，并且与突起联接。在窗构件和背光的壳体单元之间布置有粘合单元，以将窗构件附接到壳体单元。壳体单元具有暴露窗构件的开口，并且在开口的开口边缘上具有阶梯部。台阶部与窗构件连接。

43. 发明申请

US20070024546A1 Unevenness detecting apparatus for compensating for threshold voltage and method thereof 有权
标题翻译：用于补偿阈值电压的不均匀性检测装置及其方法
公开(公告)号：US20070024546A1
公开(公告)日：2007-02-01
申请号：US11396951
申请日：2006-04-03
申请人： Jin Jang , Ji-Ho Hur , Se-Hwan Kim , Seung-Hyun Park
发明人： Jin Jang , Ji-Ho Hur , Se-Hwan Kim , Seung-Hyun Park
IPC分类号： G09G3/30
CPC分类号： G06K9/0002
摘要： Unevenness detecting apparatus for compensating for threshold voltage and method thereof is provided with a plurality of scan lines and a plurality of data lines and a pixel circuit arranged in each point which the scan lines and the data lines are intersected. The unevenness detecting apparatus for compensating for the threshold voltage and method thereof may accurately sense a state of minute unevenness such as fingerprints by using an active element (e.g., TFT) as an element of which pixel circuit is composed.
摘要翻译：用于补偿阈值电压的不均匀性检测装置及其方法具有多条扫描线和多条数据线以及排列在扫描线和数据线相交的各点的像素电路。用于补偿阈值电压的不均匀性检测装置及其方法可以通过使用有源元件（例如TFT）作为构成像素电路的元件来精确地感测诸如指纹的微小不均匀的状态。

44. 发明授权

US06818059B2 Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof 有权
标题翻译：非晶硅层结晶方法及其结晶装置
公开(公告)号：US06818059B2
公开(公告)日：2004-11-16
申请号：US09350313
申请日：1999-07-09
申请人： Jin Jang , Soo-Young Yoon , Jae-Young Oh , Woo-Sung Shon , Seong-Jin Park
发明人： Jin Jang , Soo-Young Yoon , Jae-Young Oh , Woo-Sung Shon , Seong-Jin Park
IPC分类号： C30B106
CPC分类号： H01L21/02672 , C30B1/023 , C30B29/06 , H01J37/32009 , H01L21/02532 , H01L21/02595 , H01L21/2022 , Y10T117/10 , Y10T117/1008
摘要： The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.
摘要翻译：本发明涉及一种使非晶硅层结晶的方法及其使用等离子体结晶非晶硅层的结晶装置。本发明包括以下步骤：通过等离子体曝光在非晶硅层上沉积用于硅结晶的诱导物质，并在非晶硅层上对非晶硅层进行退火。本发明包括具有内部空间的腔室，腔室中的衬底支撑件，其中衬底支撑件支撑衬底;腔室中的等离子体产生装置，其中等离子体产生装置在室内产生等离子体，以及衬底支撑件处的加热器其中所述加热器对所述基板供热。

45. 发明授权

US06812072B2 Method for crystallizing amorphous film and method for fabricating LCD by using the same 有权
标题翻译：使非晶质膜结晶的方法及其制造方法
公开(公告)号：US06812072B2
公开(公告)日：2004-11-02
申请号：US10189510
申请日：2002-07-08
申请人： Jin Jang , Kyung Ho Kim , Ah Young Kim
发明人： Jin Jang , Kyung Ho Kim , Ah Young Kim
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , C30B1/023 , C30B29/06 , H01L21/02532 , H01L21/2022 , H01L29/66757 , H01L29/78609 , H01L29/78675
摘要： A method for crystallizing an amorphous film for enhancing a crystallinity and minimizing an amount of remaining metal in a polycrystalline silicon thin film, and a method for fabricating a liquid crystal display device (LCD) by using the same. The method for crystallizing an amorphous film including forming an amorphous film on a substrate; forming a thin first metal layer; forming a second metal layer on the amorphous film at predetermined parts; and heat treating the amorphous film, for crystallizing the amorphous film.
摘要翻译：用于结晶非晶膜以提高结晶度并使多晶硅薄膜中剩余金属量最小化的方法，以及通过使用该方法制造液晶显示装置（LCD）的方法。一种非晶膜结晶方法，包括在基板上形成非晶膜; 形成薄的第一金属层; 在预定部分的非晶膜上形成第二金属层; 并对非晶膜进行热处理，以使非晶膜结晶。

46. 发明授权

US06562668B2 Method of fabricating thin film transistor using buffer layer and the thin film transistor 失效
公开(公告)号：US06562668B2
公开(公告)日：2003-05-13
申请号：US09927362
申请日：2001-08-13
申请人： Jin Jang , In Keun Woo , Sang Wook Lee
发明人： Jin Jang , In Keun Woo , Sang Wook Lee
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , H01L29/4908
摘要： In the method of fabricating a thin film transistor, a first aluminum layer, which is later oxidized, or aluminum nitride layer is formed on a glass substrate. A metal gate is formed on the aluminum layer or the aluminum nitride layer. Oxidation of the aluminum layer is carried either prior to or after forming the gate. A thin film transistor structure that includes the metal gate is then formed over the substrate.

47. 发明授权

US06380612B1 Thin film formed by inductively coupled plasma 有权
标题翻译：电感耦合等离子体形成薄膜
公开(公告)号：US06380612B1
公开(公告)日：2002-04-30
申请号：US09517077
申请日：2000-03-01
申请人： Jin Jang , Jae-gak Kim , Se-Il Cho
发明人： Jin Jang , Jae-gak Kim , Se-Il Cho
IPC分类号： H01L2131
CPC分类号： C23C16/24 , C23C16/345 , C23C16/4404 , C23C16/507 , H01J37/321 , H01J37/32477 , H01L21/3185 , H01L29/66765 , H01L29/78669 , H01L29/78678 , Y10S156/914
摘要： Silicon nitride is formed on a supporting substrate by chemical vapor deposition using an antenna outside a vacuum reaction chamber to apply RF power to form an inductively coupled plasma from a reactant gas.
摘要翻译：通过使用真空反应室外部的天线的化学气相沉积在支撑基板上形成氮化硅以施加RF功率以形成来自反应气体的电感耦合等离子体。

48. 发明授权

US06309951B1 Method for crystallizing amorphous silicon 有权
标题翻译：非晶硅结晶方法
公开(公告)号：US06309951B1
公开(公告)日：2001-10-30
申请号：US09327161
申请日：1999-06-09
申请人： Jin Jang , Jong-Kab Park
发明人： Jin Jang , Jong-Kab Park
IPC分类号： H01L2136
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/28518 , H01L29/6675
摘要： A method of crystallizing an amorphous film comprises the steps of forming an amorphous film capable of being crystallized on a substrate, the amorphous film being in contact with a Co thin film, and crystallizing the amorphous film by forming and electric field in the amorphous film and the Co thin film, while simultaneously subjecting the amorphous film and the Co thin film to a thermal treatment, thereby crystallizing the amorphous film.
摘要翻译：结晶非晶膜的方法包括以下步骤：形成能够在基板上结晶的非晶膜，所述非晶膜与Co薄膜接触，并且通过在所述非晶膜中形成和电场使所述非晶膜结晶，以及 Co薄膜，同时对非晶膜和Co薄膜进行热处理，从而使非晶膜结晶。

49. 发明授权

US06241817B1 Method for crystallizing amorphous layer 失效
标题翻译：非晶层结晶方法
公开(公告)号：US06241817B1
公开(公告)日：2001-06-05
申请号：US09083109
申请日：1998-05-22
申请人： Jin Jang , Soo-Young Yoon , Jae-Young Oh
发明人： Jin Jang , Soo-Young Yoon , Jae-Young Oh
IPC分类号： C30B106
CPC分类号： C30B1/023 , C30B29/06
摘要： A method for crystallizing an amorphous layer into a polycrystalline layer. The method uses a substrate under the amorphous layer and a nickel film on the amorphous layer, which are subjected to a heat treatment. The nickel film is formed by a coating step that uses a nickel-containing solution. Alternatively, a nickel and gold, or a nickel and palladium, solution can be used. The method eliminates contamination with metal in the polycrystalline silicon layer and reduces its growth temperature.
摘要翻译：一种将非晶层结晶成多晶层的方法。该方法使用非晶层下的衬底和非晶层上的镍膜进行热处理。镍膜通过使用含镍溶液的涂布步骤形成。或者，可以使用镍和金，或镍和钯的溶液。该方法消除了多晶硅层中金属的污染并降低其生长温度。

50. 发明授权

US6093660A Inductively coupled plasma chemical vapor deposition technology 失效
标题翻译：电感耦合等离子体化学气相沉积技术
公开(公告)号：US6093660A
公开(公告)日：2000-07-25
申请号：US820293
申请日：1997-03-18
申请人： Jin Jang , Jae-gak Kim , Se-Il Cho
发明人： Jin Jang , Jae-gak Kim , Se-Il Cho
IPC分类号： C23C16/50 , C23C16/24 , C23C16/34 , C23C16/44 , C23C16/507 , H01J37/32 , H01L21/20 , H01L21/205 , H01L21/31 , H01L21/314 , H01L21/318 , H01L21/336 , H01L29/786 , H01L21/265 , H01L21/316
CPC分类号： C23C16/24 , C23C16/345 , C23C16/4404 , C23C16/507 , H01J37/321 , H01J37/32477 , H01L21/3185 , H01L29/66765 , H01L29/78669 , H01L29/78678 , Y10S156/914
摘要： Disclosed is an inductively coupled plasma chemical vapor deposition method for depositing a selected thin film on a substrate from inductively coupled plasma, the method including the steps of: providing a vacuum reaction chamber including an interior bounded, in part by a dielectric shield, the dielectric shield having an amorphous silicon layer on its interior surface, and an antenna arranged outside the deposition chamber adjacent to the dielectric shield where RF power is applied; placing the substrate on a stage with the chamber; exhausting the vacuum reaction chamber leaving a vacuum state; introducing a reactant gas to the vacuum reaction chamber at a predetermined pressure; and applying RF power to the antenna, whereby inductively coupled plasma for deposition of a thin film from the reactant gas is formed within the vacuum chamber.
摘要翻译：公开了一种电感耦合等离子体化学气相沉积方法，用于从电感耦合等离子体在基板上沉积选定的薄膜，该方法包括以下步骤：提供一个真空反应室，该真空反应室包括一部分通过电介质屏蔽界定的内部，屏蔽体在其内表面上具有非晶硅层，以及布置在沉积室外部的天线，其与施加RF功率的介电屏蔽相邻; 将基板放置在具有室的台上; 排出真空反应室离开真空状态; 在预定压力下将反应气体引入真空反应室; 并且向天线施加RF功率，由此在真空室内形成用于从反应气体沉积薄膜的电感耦合等离子体。

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