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1. 发明授权

US06524662B2 Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof 有权
标题翻译：非晶硅层结晶方法及其结晶装置
公开(公告)号：US06524662B2
公开(公告)日：2003-02-25
申请号：US09350816
申请日：1999-07-09
申请人： Jin Jang , Soo-Young Yoon , Jae-Young Oh , Woo-Sung Shon , Seong-Jin Park
发明人： Jin Jang , Soo-Young Yoon , Jae-Young Oh , Woo-Sung Shon , Seong-Jin Park
IPC分类号： H05H100
CPC分类号： C30B1/023 , C30B29/06
摘要： The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using of electric fields and plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer while applying an electric field to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, an electric field generating means in the chamber wherein the electric field generating means applies electric field to the substrate, and a heater at the substrate support wherein the heater supplies the substrate with heat.
摘要翻译：本发明涉及一种使非晶硅层结晶的方法及其使用电场和等离子体使非晶硅层结晶的结晶装置。本发明包括以下步骤：通过等离子体曝光在非晶硅层上淀积用于硅结晶的诱导物质，同时对非晶硅层施加电场，对非晶硅层进行退火。本发明包括具有内部空间的腔室，腔室中的衬底支撑件，其中衬底支撑件支撑衬底;腔室中的等离子体产生装置，其中等离子体产生装置在室内产生等离子体;电场产生装置，其中电场产生装置向衬底施加电场，以及在衬底支撑件处的加热器，其中加热器对衬底供热。

2. 发明授权

US06818059B2 Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof 有权
标题翻译：非晶硅层结晶方法及其结晶装置
公开(公告)号：US06818059B2
公开(公告)日：2004-11-16
申请号：US09350313
申请日：1999-07-09
申请人： Jin Jang , Soo-Young Yoon , Jae-Young Oh , Woo-Sung Shon , Seong-Jin Park
发明人： Jin Jang , Soo-Young Yoon , Jae-Young Oh , Woo-Sung Shon , Seong-Jin Park
IPC分类号： C30B106
CPC分类号： H01L21/02672 , C30B1/023 , C30B29/06 , H01J37/32009 , H01L21/02532 , H01L21/02595 , H01L21/2022 , Y10T117/10 , Y10T117/1008
摘要： The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.
摘要翻译：本发明涉及一种使非晶硅层结晶的方法及其使用等离子体结晶非晶硅层的结晶装置。本发明包括以下步骤：通过等离子体曝光在非晶硅层上沉积用于硅结晶的诱导物质，并在非晶硅层上对非晶硅层进行退火。本发明包括具有内部空间的腔室，腔室中的衬底支撑件，其中衬底支撑件支撑衬底;腔室中的等离子体产生装置，其中等离子体产生装置在室内产生等离子体，以及衬底支撑件处的加热器其中所述加热器对所述基板供热。

3. 发明授权

US07022191B2 Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof 有权
标题翻译：非晶硅层结晶方法及其结晶装置
公开(公告)号：US07022191B2
公开(公告)日：2006-04-04
申请号：US10899014
申请日：2004-07-27
申请人： Jin Jang , Soo-Young Yoon , Jae-Young Oh , Woo-Sung Shon , Seong-Jin Park
发明人： Jin Jang , Soo-Young Yoon , Jae-Young Oh , Woo-Sung Shon , Seong-Jin Park
IPC分类号： C30B25/14
CPC分类号： H01L21/02672 , C30B1/023 , C30B29/06 , H01J37/32009 , H01L21/02532 , H01L21/02595 , H01L21/2022 , Y10T117/10 , Y10T117/1008
摘要： The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.
摘要翻译：本发明涉及一种使非晶硅层结晶的方法及其使用等离子体结晶非晶硅层的结晶装置。本发明包括以下步骤：通过等离子体曝光在非晶硅层上沉积用于硅结晶的诱导物质，并在非晶硅层上对非晶硅层进行退火。本发明包括具有内部空间的腔室，腔室中的衬底支撑件，其中衬底支撑件支撑衬底;腔室中的等离子体产生装置，其中等离子体产生装置在室内产生等离子体，以及衬底支撑件处的加热器其中所述加热器对所述基板供热。

4. 发明授权

US06326226B1 Method of crystallizing an amorphous film 失效
标题翻译：使非晶膜结晶的方法
公开(公告)号：US06326226B1
公开(公告)日：2001-12-04
申请号：US09115498
申请日：1998-07-14
申请人： Jin Jang , Soo-Young Yoon , Jae-Young Oh
发明人： Jin Jang , Soo-Young Yoon , Jae-Young Oh
IPC分类号： H01L2120
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022
摘要： A method of crystallizing an amorphous film includes the steps of forming an amorphous film capable of being crystallized on a substrate, the amorphous film being in contact with a metal layer; and crystallizing the amorphous film by forming an electric field in the amorphous film and the metal layer, while simultaneously subjecting the amorphous film and the metal layer to a thermal treatment, thereby crystallizing the amorphous film.
摘要翻译：结晶非晶膜的方法包括以下步骤：形成能够在基板上结晶的非晶膜，所述非晶膜与金属层接触; 并且通过在非晶膜和金属层中形成电场而结晶非晶膜，同时对非晶膜和金属层进行热处理，从而使非晶膜结晶。

5. 发明授权

US06241817B1 Method for crystallizing amorphous layer 失效
标题翻译：非晶层结晶方法
公开(公告)号：US06241817B1
公开(公告)日：2001-06-05
申请号：US09083109
申请日：1998-05-22
申请人： Jin Jang , Soo-Young Yoon , Jae-Young Oh
发明人： Jin Jang , Soo-Young Yoon , Jae-Young Oh
IPC分类号： C30B106
CPC分类号： C30B1/023 , C30B29/06
摘要： A method for crystallizing an amorphous layer into a polycrystalline layer. The method uses a substrate under the amorphous layer and a nickel film on the amorphous layer, which are subjected to a heat treatment. The nickel film is formed by a coating step that uses a nickel-containing solution. Alternatively, a nickel and gold, or a nickel and palladium, solution can be used. The method eliminates contamination with metal in the polycrystalline silicon layer and reduces its growth temperature.
摘要翻译：一种将非晶层结晶成多晶层的方法。该方法使用非晶层下的衬底和非晶层上的镍膜进行热处理。镍膜通过使用含镍溶液的涂布步骤形成。或者，可以使用镍和金，或镍和钯的溶液。该方法消除了多晶硅层中金属的污染并降低其生长温度。

6. 发明授权

US06312979B1 Method of crystallizing an amorphous silicon layer 有权
标题翻译：使非晶硅层结晶的方法
公开(公告)号：US06312979B1
公开(公告)日：2001-11-06
申请号：US09299571
申请日：1999-04-27
申请人： Jin Jang , Soo Young Yoon , Hyun Churl Kim
发明人： Jin Jang , Soo Young Yoon , Hyun Churl Kim
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022
摘要： The present invention relates to a method of crystallizing an amorphous silicon layer which is carried out by depositing a crystallization-inducing substance on an amorphous silicon layer on crystallizing the amorphous silicon layer by metal-induced crystallization whereby speed of crystallizing silicon is increased and metal contamination by MIC is reduced. The present invention includes the steps of depositing a crystallizing-induced layer of an induced substance for crystallizing silicon on an amorphous silicon layer wherein the crystallizing induced layer is formed to the thickness under 0.03 angstroms, and treating thermally the amorphous silicon layer on which the crystallizing-induced layer is deposited. In another aspect, the present invention includes the steps of forming a crystallizing-induced substance on an amorphous silicon layer wherein the crystallizing-induced substance has predetermined density on an unit area of the amorphous silicon layer, and treating thermally the amorphous silicon layer on which the crystallizing-induced substance is formed.
摘要翻译：本发明涉及一种结晶非晶硅层的方法，该方法是通过在非晶硅层上沉淀结晶诱导物质而进行的，该结晶诱导物质通过金属诱导结晶使非晶硅层结晶，结晶硅的速度增加，金属污染通过MIC减少。本发明包括以下步骤：在非晶硅层上沉积用于结晶硅的诱导物质的结晶诱导层，其中结晶诱导层形成为厚度为0.03埃，并且将非晶硅层热处理结晶被沉积。另一方面，本发明包括以下步骤：在非晶硅层上形成结晶诱发物质，其中结晶诱发物质在非晶硅层的单位面积上具有预定的密度，并对其上的非晶硅层进行热处理形成结晶诱发物质。

7. 发明授权

US07390727B2 Polycrystalline silicon film containing Ni 有权
标题翻译：含Ni的多晶硅膜
公开(公告)号：US07390727B2
公开(公告)日：2008-06-24
申请号：US11491227
申请日：2006-07-24
申请人： Jin Jang , Seong-Jin Park
发明人： Jin Jang , Seong-Jin Park
IPC分类号： H01L21/20
CPC分类号： H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L27/1277 , H01L27/1285 , H01L27/1296
摘要： The present invention is related to a polycrystalline silicon film containing Ni which is formed by crystallizing an amorphous silicon layer containing nickel. The present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017 to 5×1019 atoms/cm3 in average and comprises a plurality of needle-shaped silicon crystallites. In another aspect, the present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017 to 5×1019 atoms/cm3, comprises a plurality of needle-shaped silicon crystallites and is formed on an insulating substrate. Such a polysilicon film according to the present invention avoids metal contamination usually generated in a conventional method of metal induced crystallization.
摘要翻译：本发明涉及通过使包含镍的非晶硅层结晶而形成的含有Ni的多晶硅膜。本发明包括多晶硅膜，其中多晶膜含有浓度范围为2×10 17至5×10 19原子/ cm 3的Ni原子。并且包括多个针状硅微晶。另一方面，本发明包括多晶硅膜，其中多晶膜含有密度为2×10 17至5×10 19原子/ cm 3的Ni原子包括多个针状硅微晶，并形成在绝缘基板上。根据本发明的这种多晶硅膜避免了通常以常规的金属诱导结晶方法产生的金属污染。

8. 发明授权

US07339188B1 Polycrystalline silicon film containing Ni 有权
标题翻译：含Ni的多晶硅膜
公开(公告)号：US07339188B1
公开(公告)日：2008-03-04
申请号：US09497508
申请日：2000-02-04
申请人： Jin Jang , Seong-Jin Park
发明人： Jin Jang , Seong-Jin Park
IPC分类号： H01L29/04
CPC分类号： H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L27/1277 , H01L27/1285 , H01L27/1296
摘要： The present invention is related to a polycrystalline silicon film containing Ni which is formed by crystallizing an amorphous silicon layer containing nickel. The present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017 to 5×1019 atoms/cm3 on average and comprises a plurality of needle-shaped silicon crystallites. In another aspect, the present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017 to 5×1019 atoms/cm3, comprises a plurality of needle-shaped silicon crystallites and is formed on an insulating substrate. Such a polysilicon film according to the present invention avoids metal contamination usually generated in a conventional method of metal induced crystallization.
摘要翻译：本发明涉及通过使包含镍的非晶硅层结晶而形成的含有Ni的多晶硅膜。本发明包括多晶硅膜，其中多晶膜含有浓度范围为2×10 17至5×10 19原子/ cm 3的Ni原子。并且包括多个针状硅微晶。另一方面，本发明包括多晶硅膜，其中多晶膜含有密度为2×10 17至5×10 19原子/ cm 3的Ni原子包括多个针状硅微晶，并形成在绝缘基板上。根据本发明的这种多晶硅膜避免了通常以常规的金属诱导结晶方法产生的金属污染。

9. 发明申请

US20060270198A1 Polycrystalline silicon film containing Ni 有权
标题翻译：含Ni的多晶硅膜
公开(公告)号：US20060270198A1
公开(公告)日：2006-11-30
申请号：US11491227
申请日：2006-07-24
申请人： Jin Jang , Seong-Jin Park
发明人： Jin Jang , Seong-Jin Park
IPC分类号： H01L21/20
CPC分类号： H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L27/1277 , H01L27/1285 , H01L27/1296
摘要： The present invention is related to a polycrystalline silicon film containing Ni which is formed by crystallizing an amorphous silicon layer containing nickel. The present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017 to 5×1019 atoms/cm3 on average and comprises a plurality of needle-shaped silicon crystallites. In another aspect, the present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017 to 5×1019 atoms/cm3, comprises a plurality of needle-shaped silicon crystallites and is formed on an insulating substrate. Such a polysilicon film according to the present invention avoids metal contamination usually generated in a conventional method of metal induced crystallization.
摘要翻译：本发明涉及通过使包含镍的非晶硅层结晶而形成的含有Ni的多晶硅膜。本发明包括多晶硅膜，其中多晶膜含有浓度范围为2×10 17至5×10 19原子/ cm 3的Ni原子。并且包括多个针状硅微晶。另一方面，本发明包括多晶硅膜，其中多晶膜含有密度为2×10 17至5×10 19原子/ cm 3的Ni原子包括多个针状硅微晶，并形成在绝缘基板上。根据本发明的这种多晶硅膜避免了通常以常规的金属诱导结晶方法产生的金属污染。

10. 发明授权

US07688370B2 Active pixel sensor array 有权
标题翻译：有源像素传感器阵列
公开(公告)号：US07688370B2
公开(公告)日：2010-03-30
申请号：US11295373
申请日：2005-12-06
申请人： Ji-Ho Hur , Se-Hwan Kim , Jin Jang
发明人： Ji-Ho Hur , Se-Hwan Kim , Jin Jang
IPC分类号： H04N3/14
CPC分类号： H04N5/37452 , H04N5/3559
摘要： Disclosed is an active pixel sensor array, which can reduce the number of elements and the size of capacitors by enabling a reset switching transistor to include a function of an optical sensor and to reset a pixel voltage with a power supply voltage VDD after a gate selection signal is outputted, and to reset a pixel voltage with a power supply voltage VDD by a coupling function in case that a gate selection signal is outputted. The active pixel image sensor having a gate driving circuit and a column driving circuit includes a pixel composed of a voltage supply unit for supplying a signal voltage to the column driving circuit; a gate selection unit for turning on according to a n+1-th gate selection signal and outputting a voltage based on a difference between a pixel voltage and a threshold voltage of the voltage supply unit; a reset switching unit for turning on according to a n+1-th gate selection signal and resetting the pixel voltage with a power supply voltage VDD; and a storage unit and a coupling unit for coupling so as to initialize the pixel voltage to be lower than the power supply voltage VDD just after the n+1-th gate selection signal is outputted.
摘要翻译：公开了一种有源像素传感器阵列，其可以通过使复位开关晶体管包括光学传感器的功能并且在栅极选择之后以电源电压VDD复位像素电压来减少元件的数量和电容器的尺寸在输出栅极选择信号的情况下，通过耦合功能输出信号，并且利用电源电压VDD复位像素电压。具有栅极驱动电路和列驱动电路的有源像素图像传感器包括由用于向列驱动电路提供信号电压的电压供给单元构成的像素; 栅极选择单元，用于根据第n + 1栅极选择信号导通，并且基于像素电压和电压提供单元的阈值电压之间的差输出电压; 复位开关单元，用于根据第n + 1个选通信号导通，并用电源电压VDD复位像素电压; 以及存储单元和耦合单元，用于耦合以将像素电压初始化为低于在输出第n + 1门选通信号之后的电源电压VDD。

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