专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20100000970A1 IN-CHAMBER MEMBER TEMPERATURE CONTROL METHOD, IN-CHAMBER MEMBER, SUBSTRATE MOUNTING TABLE AND PLASMA PROCESSING APPARATUS INCLUDING SAME 有权
标题翻译：室内会员温度控制方法，室内会员，衬底安装台和包括其中的等离子体处理装置
公开(公告)号：US20100000970A1
公开(公告)日：2010-01-07
申请号：US12498703
申请日：2009-07-07
申请人： Chishio Koshimizu , Manabu Iwata , Tatsuo Matsudo
发明人： Chishio Koshimizu , Manabu Iwata , Tatsuo Matsudo
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01J37/32642 , H01J37/32522 , H01J37/32623
摘要： In a method of controlling the temperature of an in-chamber member used in a plasma processing apparatus that processes a target substrate with plasma, a plurality of power-feeding portions is provided in the in-chamber member and the in-chamber member is heated by supplying electric power thereto through the power-feeding portions. A resistance value or resistivity of the in-chamber member is measured and the electric power is controlled based on the temperature of the in-chamber member estimated from the resistance value or resistivity. The in-chamber member includes one or more annular members arranged around the target substrate. The in-chamber member is a member making contact with plasma within a chamber and existing near the target substrate.
摘要翻译：在等离子体处理对象基板的等离子体处理装置中使用的室内部件的温度控制方法中，在室内部件中设置有多个供电部，加热室内部件通过供电部向其供电。测量室内构件的电阻值或电阻率，并且基于根据电阻值或电阻率估计的室内构件的温度来控制电功率。腔内构件包括围绕靶基底布置的一个或多个环形构件。腔内构件是与腔室内的等离子体接触并存在于靶基底附近的构件。

42. 发明申请

US20090223933A1 PLASMA PROCESSING APPARATUS AND METHOD 有权
标题翻译：等离子体加工设备和方法
公开(公告)号：US20090223933A1
公开(公告)日：2009-09-10
申请号：US12465436
申请日：2009-05-13
申请人： Manabu Iwata , Chishio Koshimizu , Yohei Yamazawa
发明人： Manabu Iwata , Chishio Koshimizu , Yohei Yamazawa
IPC分类号： B44C1/22
CPC分类号： H01J37/32091 , H01J37/32183
摘要： A plasma processing apparatus for processing a substrate by using a plasma includes a processing chamber for accommodating and processing the substrate therein, a lower electrode for mounting the substrate thereon in the processing chamber, an upper electrode disposed to face the lower electrode in the processing chamber, a radio frequency power supply for supplying a radio frequency power to at least one of the lower and the upper electrode, to thereby generate the plasma between the lower and the upper electrode, and an electrical characteristic control unit for adjusting an impedance of a circuit at the side of an electrode to the plasma for a frequency of at least one radio frequency wave present in the processing chamber such that the circuit does not resonate.
摘要翻译：用于通过使用等离子体处理衬底的等离子体处理装置包括用于在其中容纳和处理衬底的处理室，用于将衬底安装在处理室中的下电极，设置成面对处理室中的下电极的上电极，用于向下电极和上电极中的至少一个提供射频电力的射频电源，从而在下电极和上电极之间产生等离子体;以及电特性控制单元，用于调节电路的阻抗在等离子体的电极的侧面处于存在于处理室中的至少一个射频的频率，使得电路不共振。

43. 发明授权

US07532322B2 Method and apparatus for measuring electron density of plasma and plasma processing apparatus 有权
标题翻译：用于测量等离子体和等离子体处理装置的电子密度的方法和装置
公开(公告)号：US07532322B2
公开(公告)日：2009-05-12
申请号：US11566340
申请日：2006-12-04
申请人： Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
发明人： Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
IPC分类号： G01J3/30
CPC分类号： G01N21/68 , H01J37/32174 , H01J37/32935 , H01J37/32972 , H01L21/31116
摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.
摘要翻译：用于测量等离子体电子密度的装置即使在低电子密度条件或高压条件下也能精确地测量等离子体中的电子密度。该等离子体电子密度测量装置包括测量单元中的矢量网络分析仪，其测量复数反射系数并确定系数的虚部的频率特性。读取复数反射系数的虚部为零交叉点的共振频率，并且通过测量控制单元基于谐振频率计算电子密度。

44. 发明申请

US20070236148A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20070236148A1
公开(公告)日：2007-10-11
申请号：US11756097
申请日：2007-05-31
申请人： Yohei Yamazawa , Manabu Iwata , Chishio Koshimizu , Fumihiko Higuchi , Akitaka Shimizu , Asao Yamashita , Nobuhiro Iwama , Tsutomu Higashiura , DongSheng Zhang , Michiko Nakaya , Norikazu Murakami
发明人： Yohei Yamazawa , Manabu Iwata , Chishio Koshimizu , Fumihiko Higuchi , Akitaka Shimizu , Asao Yamashita , Nobuhiro Iwama , Tsutomu Higashiura , DongSheng Zhang , Michiko Nakaya , Norikazu Murakami
IPC分类号： H01L21/3065
CPC分类号： H01J37/32174 , H01J37/321
摘要： An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.
摘要翻译：通过使用等离子体在目标基板上进行等离子体处理的装置包括处理室中彼此相对的第一和第二电极。在第一和第二电极之间形成通过激发将工艺气体转化成等离子体的RF场。提供RF功率的RF电源通过匹配电路连接到第一或第二电极。匹配电路自动执行相对于RF功率的输入阻抗匹配。可变阻抗设定部分通过互连连接到与等离子体电耦合的预定部件。阻抗设定部分针对从等离子体输入到预定部件的RF分量设置反向阻抗。控制器将关于反向阻抗的预设值的控制信号提供给阻抗设定部。

45. 发明申请

US20070227664A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20070227664A1
公开(公告)日：2007-10-04
申请号：US11694083
申请日：2007-03-30
申请人： Naoki MATSUMOTO , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Noriaki Kodama , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
发明人： Naoki MATSUMOTO , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Noriaki Kodama , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32174 , H01J37/32091
摘要： A plasma processing apparatus includes a processing vessel capable of being vacuum evacuated; a first electrode disposed in the processing vessel in a state electrically floating via an insulating member or a space; a second electrode, arranged in the processing vessel to face and be in parallel to the first electrode with a specific interval, supporting a substrate to be processed; a processing gas supply unit for supplying a desired processing gas into a processing space surrounded by the first electrode, the second electrode and a sidewall of the processing vessel; and a first radio frequency power supply unit for applying a first radio frequency power to the second electrode to generate a plasma of the processing gas in the processing space. An electrostatic capacitance between the first electrode and the processing vessel is set such that a desired plasma density distribution is obtained for the generated plasma.
摘要翻译：一种等离子体处理装置，其特征在于，包括：真空抽真空处理容器; 以处于通过绝缘构件或空间电浮动的状态设置在处理容器中的第一电极; 第二电极，布置在处理容器中以特定间隔面对并平行于第一电极，支撑待处理的基板; 处理气体供给单元，用于将期望的处理气体供给到被处理容器的第一电极，第二电极和侧壁包围的处理空间中; 以及第一射频电源单元，用于向所述第二电极施加第一射频功率以在所述处理空间中产生所述处理气体的等离子体。第一电极和处理容器之间的静电电容被设定为使得所产生的等离子体获得期望的等离子体密度分布。

46. 发明申请

US20070029194A1 Capacitive coupling plasma processing apparatus and method 有权
标题翻译：电容耦合等离子体处理装置及方法
公开(公告)号：US20070029194A1
公开(公告)日：2007-02-08
申请号：US11393916
申请日：2006-03-31
申请人： Naoki Matsumoto , Hideaki Tanaka , Hisashi Fujiwara , Chishio Koshimizu , Fumiaki Koiwa , Toshiyuki Kobayashi , Youichi Nakayama , Hiroshi Nakamura
发明人： Naoki Matsumoto , Hideaki Tanaka , Hisashi Fujiwara , Chishio Koshimizu , Fumiaki Koiwa , Toshiyuki Kobayashi , Youichi Nakayama , Hiroshi Nakamura
IPC分类号： C23C14/00
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32174
摘要： A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. A process gas supply unit is configured to supply a process gas into the process container. An RF power supply is configured to apply an RF power to the first electrode or second electrode to generate plasma of the process gas. A DC power supply is configured to apply a DC voltage to the first electrode or second electrode. A control section is configured to control the RF power supply and the DC power supply such that the DC power supply causes the DC voltage applied therefrom to reach a voltage set value, when or after the RF power supply starts applying the RF power.
摘要翻译：等离子体处理装置包括被配置为容纳目标基板并被抽真空的处理容器。第一电极和第二电极在处理容器内彼此相对设置。处理气体供应单元构造成将处理气体供应到处理容器中。 RF电源被配置为向第一电极或第二电极施加RF功率以产生处理气体的等离子体。 DC电源被配置为向第一电极或第二电极施加DC电压。控制部分被配置为当RF电源开始施加RF功率时或之后，控制RF电源和DC电源，使得DC电源使由其施加的DC电压达到电压设定值。

47. 发明授权

US07018506B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07018506B2
公开(公告)日：2006-03-28
申请号：US10458239
申请日：2003-06-11
申请人： Toshiaki Hongoh , Naoki Matsumoto , Chishio Koshimizu
发明人： Toshiaki Hongoh , Naoki Matsumoto , Chishio Koshimizu
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321 , C23C16/507 , H01J37/32091
摘要： A plasma processing apparatus comprises a plate that separates a high frequency induction antenna from a vacuum chamber. The plate comprises a nonmagnetic metal plate that has an opening and a dielectric material member that seals the opening. The area of the nonmagnetic metal plate is larger than the area of the dielectric material member.
摘要翻译：等离子体处理装置包括将高频感应天线与真空室分离的板。板包括具有开口的非磁性金属板和密封开口的电介质材料构件。非磁性金属板的面积大于介电材料构件的面积。

48. 发明授权

US06576860B2 Plasma processing method and apparatus for eliminating damages in a plasma process of a substrate 有权
公开(公告)号：US06576860B2
公开(公告)日：2003-06-10
申请号：US10160243
申请日：2002-06-04
申请人： Chishio Koshimizu , Jun Ooyabu , Hideki Takeuchi , Akira Koshiishi
发明人： Chishio Koshimizu , Jun Ooyabu , Hideki Takeuchi , Akira Koshiishi
IPC分类号： B23K1000
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A plasma processing method comprises the steps of supplying a low-frequency bias to a first electrode carrying a substrate, and supplying a high-frequency power to a second electrode facing the first electrode, wherein the low-frequency bias is supplied to the first electrode in advance of starting plasma by the energy of the high-frequency power, with an electric power sufficient to form an ion-sheath on the surface of the substrate.

49. 发明授权

US5980687A Plasma processing apparatus comprising a compensating-process-gas supply means in synchronism with a rotating magnetic field 失效
标题翻译：等离子体处理装置，包括与旋转磁场同步的补偿处理气体供给装置
公开(公告)号：US5980687A
公开(公告)日：1999-11-09
申请号：US66736
申请日：1998-04-27
申请人： Chishio Koshimizu
发明人： Chishio Koshimizu
IPC分类号： H01L21/302 , C23C14/22 , C23C16/44 , C23C16/455 , H01J37/32 , H01L21/3065 , C23F1/02 , C23C14/00 , C23C16/00
CPC分类号： H01J37/3266 , C23C14/22 , C23C16/45589 , H01J37/3244 , H01J37/32623
摘要： A plasma process apparatus includes first and second electrodes or susceptors located in a process container with a space interposed therebetween, first and second electrodes being disposed to support a semiconductor wafer such that the wafers are opposed to each other through a plasma a generating region. A high frequency voltages are applied to the first and second electrodes to supply a high frequency power to the plasma generating region, and a rotating magnetic field is generated in the plasma generating region, so that the high frequency power and the rotating magnetic field generate plasma of a process gas in the plasma generating region. Compensating-process-gas supply mechanism is provided for supplying a compensating process gas to part of the plasma generating region in synchronism with the rotation of the rotating magnetic field to compensate nonuniformity in the density of plasma generated in the plasma generating region.
摘要翻译：等离子体处理装置包括位于处理容器中的第一和第二电极或基座，其中插入有空间，第一和第二电极设置成支撑半导体晶片，使得晶片通过等离子体产生区彼此相对。向第一和第二电极施加高频电压以向等离子体产生区域提供高频电力，并且在等离子体产生区域中产生旋转磁场，使得高频功率和旋转磁场产生等离子体的等离子体产生区域中的工艺气体。提供了补偿处理气体供给机构，用于与等离子体产生区域中产生的等离子体的密度的不均匀性同步地与旋转磁场的旋转同步地向补偿处理气体供给等离子体产生区域的一部分。

50. 发明授权

US5290383A Plasma-process system with improved end-point detecting scheme 失效
标题翻译：等离子体处理系统具有改进的端点检测方案
公开(公告)号：US5290383A
公开(公告)日：1994-03-01
申请号：US48711
申请日：1993-04-19
申请人： Chishio Koshimizu
发明人： Chishio Koshimizu
IPC分类号： H01J37/32 , H01L21/311 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01J37/32935 , H01J37/32963 , H01L21/31116 , Y10S156/916
摘要： In one aspect of the invention, CHF.sub.3 gas and CF.sub.4 gas (i.e., reactant gases), and argon gas (i.e., plasma-stabilizing gas) are introduced into a vacuum chamber. RF power is then applied between the electrodes within the chamber, thereby generating plasma. The plasma is applied to a substrate placed in the chamber, thus etching the SiO.sub.2 film formed on the substrate. A spectrometer extracts a light beam of a desired wavelength, emitted from the CF.sub.2 radical which contributes to the etching. An end-point detecting section monitors the luminous intensity of the CF.sub.2 radical reacting with SiO.sub.2 during the etching. Once the SiO.sub.2 film has been etched away, the luminous intensity of the CF.sub.2 radical increases. Upon detecting this increase, the section determines that etching has just ended. The selected wavelength ranges from 310 nm to 236 nm, preferably being 219.0 nm, 230.0 nm, 211.2 nm, 232.5 nm, or any one ranging from 224 nm to 229 nm. In another aspect of the invention, the device attached to the observation window of the chamber removes products stuck to the window during the etching. The window thus cleaned, more light than otherwise passes through the window and reaches the spectrometer. This enables the section to detect even a slight change in the luminous intensity of the CF.sub.2 radical, thereby detecting the end point of etching with accuracy.
摘要翻译：在本发明的一个方面，将CHF 3气体和CF 4气体（即反应气体）和氩气（即等离子体稳定气体）引入真空室。然后将RF功率施加在室内的电极之间，从而产生等离子体。将等离子体施加到放置在室中的衬底上，从而蚀刻形成在衬底上的SiO 2膜。光谱仪提取从有助于蚀刻的CF 2自由基发射的期望波长的光束。终点检测部分在蚀刻期间监测与SiO 2反应的CF 2自由基的发光强度。一旦SiO 2膜被蚀刻掉，CF2自由基的发光强度就会增加。在检测到这种增加时，该部分确定蚀刻刚刚结束。所选择的波长范围为310nm至236nm，优选为219.0nm，230.0nm，211.2nm，232.5nm或224nm至229nm的任何一个。在本发明的另一方面，连接到室的观察窗的装置在蚀刻期间去除粘附到窗口的产物。如此清洁的窗户，比其他方式更光线通过窗户并到达光谱仪。这使得该部分甚至可以检测到CF2基团的发光强度的轻微变化，从而精确地检测蚀刻的终点。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式