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1. 发明授权

US07692916B2 Capacitive coupling plasma processing apparatus and method 有权
标题翻译：电容耦合等离子体处理装置及方法
公开(公告)号：US07692916B2
公开(公告)日：2010-04-06
申请号：US11393916
申请日：2006-03-31
申请人： Naoki Matsumoto , Hideaki Tanaka , Hisashi Fujiwara , Chishio Koshimizu , Fumiaki Koiwa , Toshiyuki Kobayashi , Youichi Nakayama , Hiroshi Nakamura
发明人： Naoki Matsumoto , Hideaki Tanaka , Hisashi Fujiwara , Chishio Koshimizu , Fumiaki Koiwa , Toshiyuki Kobayashi , Youichi Nakayama , Hiroshi Nakamura
IPC分类号： H01L21/683
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32174
摘要： A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. A process gas supply unit is configured to supply a process gas into the process container. An RF power supply is configured to apply an RF power to the first electrode or second electrode to generate plasma of the process gas. A DC power supply is configured to apply a DC voltage to the first electrode or second electrode. A control section is configured to control the RF power supply and the DC power supply such that the DC power supply causes the DC voltage applied therefrom to reach a voltage set value, when or after the RF power supply starts applying the RF power.
摘要翻译：等离子体处理装置包括被配置为容纳目标基板并被抽真空的处理容器。第一电极和第二电极在处理容器内彼此相对设置。处理气体供应单元构造成将处理气体供应到处理容器中。 RF电源被配置为向第一电极或第二电极施加RF功率以产生处理气体的等离子体。 DC电源被配置为向第一电极或第二电极施加DC电压。控制部分被配置为当RF电源开始施加RF功率时或之后，控制RF电源和DC电源，使得DC电源使由其施加的DC电压达到电压设定值。

2. 发明申请

US20070029194A1 Capacitive coupling plasma processing apparatus and method 有权
标题翻译：电容耦合等离子体处理装置及方法
公开(公告)号：US20070029194A1
公开(公告)日：2007-02-08
申请号：US11393916
申请日：2006-03-31
申请人： Naoki Matsumoto , Hideaki Tanaka , Hisashi Fujiwara , Chishio Koshimizu , Fumiaki Koiwa , Toshiyuki Kobayashi , Youichi Nakayama , Hiroshi Nakamura
发明人： Naoki Matsumoto , Hideaki Tanaka , Hisashi Fujiwara , Chishio Koshimizu , Fumiaki Koiwa , Toshiyuki Kobayashi , Youichi Nakayama , Hiroshi Nakamura
IPC分类号： C23C14/00
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32174
摘要： A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. A process gas supply unit is configured to supply a process gas into the process container. An RF power supply is configured to apply an RF power to the first electrode or second electrode to generate plasma of the process gas. A DC power supply is configured to apply a DC voltage to the first electrode or second electrode. A control section is configured to control the RF power supply and the DC power supply such that the DC power supply causes the DC voltage applied therefrom to reach a voltage set value, when or after the RF power supply starts applying the RF power.
摘要翻译：等离子体处理装置包括被配置为容纳目标基板并被抽真空的处理容器。第一电极和第二电极在处理容器内彼此相对设置。处理气体供应单元构造成将处理气体供应到处理容器中。 RF电源被配置为向第一电极或第二电极施加RF功率以产生处理气体的等离子体。 DC电源被配置为向第一电极或第二电极施加DC电压。控制部分被配置为当RF电源开始施加RF功率时或之后，控制RF电源和DC电源，使得DC电源使由其施加的DC电压达到电压设定值。

3. 发明授权

US08513563B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08513563B2
公开(公告)日：2013-08-20
申请号：US13403588
申请日：2012-02-23
申请人： Naoki Matsumoto , Chishio Koshimizu , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Manabu Iwata , Satoshi Tanaka
发明人： Naoki Matsumoto , Chishio Koshimizu , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Manabu Iwata , Satoshi Tanaka
IPC分类号： B23K10/00
CPC分类号： H01J37/32165 , H01J37/32082
摘要： In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.
摘要翻译：在等离子体处理装置中，第一电极经由绝缘材料或空间连接到接地的可抽出处理室，并且在处理室中与与其间隔开的第一电极平行设置的第二电极，第二电极支撑目标衬底面对第一个电极。第一射频电源单元向第二电极施加第一频率的第一射频功率，第二射频电源单元将第二频率低于第一频率的第二射频功率施加到第二电极。此外，处理气体供给单元将处理气体供给到由第一和第二电极以及处理室的侧壁形成的处理空间。此外，电感器电连接在第一电极和地电位之间。

4. 发明授权

US08343306B2 Plasma processing apparatus and method of plasma distribution correction 有权
标题翻译：等离子体处理装置及等离子体分布校正方法
公开(公告)号：US08343306B2
公开(公告)日：2013-01-01
申请号：US12046094
申请日：2008-03-11
申请人： Satoshi Tanaka , Chishio Koshimizu , Manabu Iwata , Naoki Matsumoto , Toru Ito
发明人： Satoshi Tanaka , Chishio Koshimizu , Manabu Iwata , Naoki Matsumoto , Toru Ito
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01J37/32706 , H01J37/32091
摘要： A plasma processing apparatus can prevent a sheath from becoming distorted, simplify a configuration of the apparatus, and prevent particles from attaching to a substrate. The plasma processing apparatus performs plasma processing on the substrate. A housing chamber houses the substrate. A mounting stage is disposed within the housing chamber and mounted with the substrate. An annular member is disposed in the mounting stage. A power supply unit supplies high-frequency power to the mounting stage. An observation unit optically observes the distribution of the plasma. A voltage applying unit applies a DC voltage to the annular member. A control unit sets the value of the DC voltage to be applied based on the observed plasma distribution.
摘要翻译：等离子体处理装置可以防止护套变形，简化装置的构造，并防止颗粒附着于基板。等离子体处理装置对基板进行等离子体处理。容纳室容纳衬底。安装台设置在壳体室内并与基板一起安装。环形构件设置在安装台中。电源单元为安装级提供高频电源。观察单元光学地观察等离子体的分布。电压施加单元向环形构件施加DC电压。控制单元基于观察到的等离子体分布来设定要施加的DC电压的值。

5. 发明授权

US08137471B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US08137471B2
公开(公告)日：2012-03-20
申请号：US12696323
申请日：2010-01-29
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
IPC分类号： C23C16/00
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32348 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32642 , H01J37/32706 , H01J37/32834 , H01J2237/3344 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

6. 发明授权

US07339656B2 Method and apparatus for measuring electron density of plasma and plasma processing apparatus 有权
公开(公告)号：US07339656B2
公开(公告)日：2008-03-04
申请号：US10831757
申请日：2004-04-26
申请人： Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
发明人： Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
IPC分类号： G01N21/00
CPC分类号： G01N21/68 , H01J37/32174 , H01J37/32935 , H01J37/32972 , H01L21/31116
摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

7. 发明申请

US20070193514A1 METHOD AND APPARATUS FOR MEASURING ELECTRON DENSITY OF PLASMA AND PLASMA PROCESSING APPARATUS 有权
公开(公告)号：US20070193514A1
公开(公告)日：2007-08-23
申请号：US11742643
申请日：2007-05-01
申请人： Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
发明人： Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
IPC分类号： C23C16/00
CPC分类号： G01N21/68 , H01J37/32174 , H01J37/32935 , H01J37/32972 , H01L21/31116
摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

8. 发明授权

US08506753B2 Capacitive coupling plasma processing apparatus and method for using the same 有权
标题翻译：电容耦合等离子体处理装置及其使用方法
公开(公告)号：US08506753B2
公开(公告)日：2013-08-13
申请号：US13177195
申请日：2011-07-06
申请人： Naoki Matsumoto , Chishio Koshimizu , Akira Koshiishi
发明人： Naoki Matsumoto , Chishio Koshimizu , Akira Koshiishi
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01L21/67069 , C23F4/00 , H01J37/32082 , H01J37/3244 , H01J37/32532 , H01J2237/334
摘要： A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.
摘要翻译：等离子体处理装置包括被配置为容纳目标基板并被抽真空的处理容器。第一电极和第二电极在处理容器内彼此相对设置。第一电极包括外部部分和面向第二电极的内部部分，使得外部部分围绕内部部分。 RF电源被配置为向第一电极的外部施加RF功率。 DC电源被配置为向第一电极的内部施加DC电压。处理气体供应单元被配置为将处理气体供应到处理容器中，其中处理气体的等离子体在第一电极和第二电极之间产生。

9. 发明授权

US08404137B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08404137B2
公开(公告)日：2013-03-26
申请号：US13014155
申请日：2011-01-26
申请人： Chishio Koshimizu , Naoki Matsumoto
发明人： Chishio Koshimizu , Naoki Matsumoto
IPC分类号： G01R31/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/32706
摘要： A plasma processing apparatus includes a plurality of radio-frequency power supplies for supplying radio-frequency powers having frequencies different from each other, a common feeding line for superposing radio-frequency powers supplied respectively from the plurality of radio-frequency power supplies and feeding the superposed radio-frequency power to a same radio-frequency electrode, a radio-frequency power extracting device for extracting radio-frequency powers having predetermined frequencies from radio-frequency powers fed via the feeding line, and a radio-frequency voltage detector for measuring voltages of the radio-frequency powers having the predetermined frequencies extracted by the radio-frequency power extracting device.
摘要翻译：等离子体处理装置包括多个用于提供具有彼此不同频率的射频功率的高频电源，用于叠加从多个射频电源分别提供的射频功率的馈电线，将叠加的射频电力叠加到同一射频电极，用于从经由馈电线馈送的射频功率提取具有预定频率的射频功率的射频功率提取装置和用于测量电压的射频电压检测器具有由射频功率提取装置提取的预定频率的射频功率。

10. 发明申请

US20120145324A1 PLASMA PROCESSING APPARATUS AND METHOD 有权
标题翻译：等离子体加工设备和方法
公开(公告)号：US20120145324A1
公开(公告)日：2012-06-14
申请号：US13396181
申请日：2012-02-14
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
IPC分类号： H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32348 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32642 , H01J37/32706 , H01J37/32834 , H01J2237/3344 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

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