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    • 43. 发明专利
    • THIN-FILM MAGNETIC HEAD AND ITS PRODUCTION
    • JPH103612A
    • 1998-01-06
    • JP15370696
    • 1996-06-14
    • HITACHI LTD
    • KUDO KAZUEOKADA TOSHIHIRO
    • G11B5/31
    • PROBLEM TO BE SOLVED: To make it possible to form a frame delineating a track width with high accuracy by forming this frame after flattening the stepped part of the insulating layer on a conductor coil and forming the resist used for flattening as part of the frame. SOLUTION: The resist 6 of the film thickness enough to flatten the stepping of the conductor coil 3 and the insulating layer on the coil is applied over the entire surface. This resist is exposed and developed via a photomask, by which the resist 6 in the upper part of the stepping is removed. The resist 6 in the lower part of the stepping is then made to reflow and is thereby flattened. The resist 6 for forming the frame 5 is then applied over the entire surface and is exposed and developed via a photomask, by which part of the frame is formed. Further, the frame is irradiated with UV rays, for UV rays, electron beams, etc. An ion milling method is, for example, used for patterning of the resist 6 previously used for flattening. As a result, the frame delineating the track width is formed with the high accuracy.
    • 47. 发明专利
    • THIN-FILM MAGNETIC HEAD AND ITS PRODUCTION
    • JPH06103535A
    • 1994-04-15
    • JP24757192
    • 1992-09-17
    • HITACHI LTD
    • KAWABE TAKASHIOKADA TOSHIHIROIMAGAWA TAKAOASHIDA EIJIFUYAMA MORIAKI
    • G11B5/39
    • PURPOSE:To obtain reliability and high pattern accuracy by constituting the electrode film with a material which can be patterned and produced by reactive etching using plasma contg. fluorine radical or fluorine ions. CONSTITUTION:Total four-layered films consisting of an NiFe film 106 as a magneto-resistance effect film, an FeNiCr film 108 as a shunt bias film and a Cr film 201 as an etching stopper film are formed on a ground surface film 102 and after sensor patterns are formed, three-layered films 202 consisting of Nb (20nm thickness)/W(0.3mum)/Nb(20nm) are formed as the electrode films. In succession, positive type photoresist patterns 203 (1mum) are produced. The electrode films 202 are etched by a reactive ion etching method using a gaseous mixture composed of CF4+5%O2. The etching conditions are specified to 6Pa gaseous pressure and 100W electric power to be applied. Since the Cr film 201 as the etching stopper exists under the electrode films 202 at this time, the sensor part does not receive the damage by the etching and the excellent reproduction characteristic is maintained.