专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

DE69622607D1 未知
公开(公告)号：DE69622607D1
公开(公告)日：2002-09-05
申请号：DE69622607
申请日：1996-01-23
申请人： HITACHI LTD
发明人： WAKAGI MASATOSHI , ONISAWA KENICHI , ANDO MASAHIKO , KANEKO TOSHIKI , MINEMURA TETSUROH , OKADA TOMOHIRO
IPC分类号： G02F1/136 , G02F1/1345 , G02F1/1362 , G02F1/1368 , H01L29/786
摘要： An object of the present invention is to provide a liquid crystal display device which can be fabricated through simplified processes, provides high product yield, and is excellent in picture displaying characteristic. The liquid crystal display device of the present invention comprises a substrate (1) having thereon a plurality of drain wirings (2), a plurality of gate wirings (8) crossing the plurality of drain wirings (2) in a matrix array, a plurality of thin film transistors disposed in the vicinity of these crossings, and a plurality of pixel electrodes (4) connected to the thin film transistors, respectively, a substrate disposed in opposing relation to the substrate (1), and a liquid crystal layer sandwiched between these substrates. Each terminal portion (5; 9) of the plurality of drain wirings (2) and plurality of gate wirings (8) is constructed with a metallic film covered with a transparent conductive film.

2. 发明专利

GB2435717B Active matrix display device 未知
公开(公告)号：GB2435717B
公开(公告)日：2008-03-26
申请号：GB0704022
申请日：2004-08-18
申请人： HITACHI LTD
发明人： ANDO MASAHIKO , ADACHI MASAYA , SASAKI HIROSHI , WAKAGI MASATOSHI
IPC分类号： H01L27/32 , G02F1/1368 , G06K19/00 , G09F9/30 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/786 , H01L51/00 , H01L51/40

3. 发明专利

DE69025241T2 未知
公开(公告)号：DE69025241T2
公开(公告)日：1996-06-13
申请号：DE69025241
申请日：1990-08-20
申请人： HITACHI LTD
发明人： ISHIKAWA FUMINORI , SATO AKIRA , TAMAHASHI KUNIHIRO , WAKAGI MASATOSHI , TAMURA KATSUMI , HANAZONO MASANOBU , SHOJI MITSUYOSHI , NAKAKAWAJI TAKAYUKI , ITO YUTAKA , KOMATSUZAKI SHIGEKI , AKAGI MOTOO , IMAMURA MASAAKI
IPC分类号： G03G5/147
摘要： An electrophotographic photoreceptor comprising a photoconductive layer (103) comprising a photoconductor, a support (101, 102) for the photoconductive layer (103) and a surface layer (107) formed on the photoconductive layer (103) and comprising a curable resin film (105) and inorganic insulator pieces (106) having a size larger than the film thickness of the curable resin film (105). In order to prevent the image blurring of an a-Si:H photoreceptor, on the outermost surface of the photoreceptor was formed a surface layer having a structure in which inorganic insulator pieces (106) have protruded from the curable resin film (105). Since the curable resin (105) is of high resistance and shows no quality change by corona irradiation, and besides the protruding inorganic insulator pieces (106) prevent the abrasion of the resin, the surface layer (107) having a long life and excellent humidity resistance, durability for corona irradiation and abrasion resistance can be realized. Further, by covering the surface layer (107) with a fluorine-containing lubricant, the surface layer (107) having a low friction coefficient and excellent cleaning characteristics is obtained, and besides the resin constituting the surface layer (107) absorbs little moisture. As a result, it becomes possible to use the a-Si:H photoreceptors without a heater. Also, the surface layer (107) of the present invention can be removed and then re-formed.

4. 发明专利

DE102012222439A1 Halbleiterbauelement und dieses verwendende Leistungsumwandlungsausstattung 未知
公开(公告)号：DE102012222439A1
公开(公告)日：2013-06-13
申请号：DE102012222439
申请日：2012-12-06
申请人： HITACHI LTD
发明人： WAKAGI MASATOSHI , TOYOTA YOSHIAKI , SAKANO JUNICHI
IPC分类号： H01L29/739 , H01L21/822 , H01L29/16 , H01L29/41 , H02M7/537
摘要： Es wird ein Halbleiterbauelement bereitgestellt, das ein Schaltrauschen reduzieren und eine Ausbeuteminderung abbauen kann. Ein Blind-Gate DG auf einem festgelegten Potenzial ist zwischen einer ersten Zone, die mit einem Graben-Gate versehen ist, und einer zweiten Zone, die mit einer p-Typ-Senkenschicht PW versehen ist, ausgebildet.

5. 发明专利

GB2435717A Organic active matrix display device 未知
公开(公告)号：GB2435717A
公开(公告)日：2007-09-05
申请号：GB0704022
申请日：2004-08-18
申请人： HITACHI LTD
发明人： ANDO MASAHIKO , ADACHI MASAYA , SASAKI HIROSHI , WAKAGI MASATOSHI
IPC分类号： H01L27/32 , G02F1/1368 , G06K19/00 , G09F9/30 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/786 , H01L51/00 , H01L51/40
摘要： An active matrix display device (fig 14) comprises an thin film transistor (TFT) substrate, (16, fig 14), display elements (20) formed on the TFT substrate (16), a counter electrode formed on the display elements (20), a scanning circuit (17) providing a scanning voltage and a signal circuit (18) providing a signal voltage. The TFT substrate (16) comprises an insulating film 3 over the gate electrode 2. The insulating film 3 is provided with lyophobic 4 and lyophilic regions where source and drain electrodes 5 are formed on the lyophilic regions with a lyophobic region 4 disposed in between. Using the gate electrode 2 as a photomask, a lyophobic region 4 having the same pattern as that of the gate electrode 2 and a lyophilic region having a pattern which is the inversion of the gate electrode pattern are formed on the insulating film. Therefore no misalignment occurs even if a printing method is used.

6. 发明专利

GB2420017B Thin-film transistor substrate, and its production method 未知
公开(公告)号：GB2420017B
公开(公告)日：2007-05-09
申请号：GB0603679
申请日：2004-08-18
申请人： HITACHI LTD
发明人： ANDO MASAHIKO , ADACHI MASAYA , SASAKI HIROSHI , WAKAGI MASATOSHI
IPC分类号： H01L29/786 , G02F1/1368 , G06K19/00 , G09F9/00 , G09F9/30 , H01L21/288 , H01L21/3205 , H01L21/336 , H01L21/77 , H01L27/12 , H01L51/40
摘要： Using a lower electrode as a photomask, a lyophobic region having generally the same pattern as that of the lower electrode and a lyophilic region having a pattern which is generally the inversion of the lower electrode pattern are formed on an insulating film. A conductive ink is applied to the lyophobic region and baked. Thus, an upper electrode having a pattern which is generally the inversion of the lower electrode pattern is formed in a self-alignment manner. Therefore no misalignment occurs even if a printing method is used. Thus, a semiconductor device such as an active-matrix thin-film transistor substrate can be fabricated by using a printing method.

7. 发明专利

GB2420017A Electrode substrate, thin-film transistor, display, and its production method 未知
公开(公告)号：GB2420017A
公开(公告)日：2006-05-10
申请号：GB0603679
申请日：2004-08-18
申请人： HITACHI LTD
发明人： ANDO MASAHIKO , ADACHI MASAYA , SASAKI HIROSHI , WAKAGI MASATOSHI
IPC分类号： H01L29/786 , G02F1/1368 , G06K19/00 , G09F9/00 , G09F9/30 , H01L21/288 , H01L21/3205 , H01L21/336 , H01L21/77 , H01L27/12 , H01L51/40
摘要： Using a lower electrode as a photomask, a yophobic region having generally the same pattern as that of the lower electrode and a yophibic region having a pattern which is generally the inversion of the lower electrode pattern are formed on an insulating film. A conductive ink is applied to the yophobic region and baked. Thus, an upper electrode having a pattern which is generally the inversion of the lower electrode pattern is formed in a self-alignment manner. Therefore no misalignment occurs even if a printing method is used. Thus, a semiconductor device such as an active-matrix thin-film transistor substrate can be fabricated by using a printing method.

8. 发明专利

DE69627393T2 未知
公开(公告)号：DE69627393T2
公开(公告)日：2004-02-05
申请号：DE69627393
申请日：1996-11-27
申请人： HITACHI LTD
发明人： ANDO MASAHIKO , WAKAGI MASATOSHI , FUKAYA RITSUO
IPC分类号： G02F1/1333 , A01N25/02 , A01N33/12 , C11D3/48 , G02F1/133 , G02F1/1343 , G02F1/1368 , H01L21/28 , H01L21/336 , H01L29/51 , H01L29/786 , G02F1/136
摘要： A thin film transistor used as a switching element of an active matrix type liquid crystal display is an enhancement-mode thin film transistor including a silicon nitride film (13) formed over a scanning electrode (12), an insulating layer (14) formed on the silicon nitride film (13), and a semiconductor layer having a source region (17) and a drain region (18) formed on the insulating layer (14). The thin film transistor has a threshold voltage higher than the maximum value of the liquid crystal operating voltage. The insulating layer (14) is a silicon oxide film having a thickness of 30 ANGSTROM or more.

9. 发明专利

DE69627393D1 未知
公开(公告)号：DE69627393D1
公开(公告)日：2003-05-15
申请号：DE69627393
申请日：1996-11-27
申请人： HITACHI LTD
发明人： ANDO MASAHIKO , WAKAGI MASATOSHI , FUKAYA RITSUO
IPC分类号： G02F1/1333 , A01N25/02 , A01N33/12 , C11D3/48 , G02F1/133 , G02F1/1343 , G02F1/1368 , H01L21/28 , H01L21/336 , H01L29/51 , H01L29/786 , G02F1/136
摘要： A thin film transistor used as a switching element of an active matrix type liquid crystal display is an enhancement-mode thin film transistor including a silicon nitride film (13) formed over a scanning electrode (12), an insulating layer (14) formed on the silicon nitride film (13), and a semiconductor layer having a source region (17) and a drain region (18) formed on the insulating layer (14). The thin film transistor has a threshold voltage higher than the maximum value of the liquid crystal operating voltage. The insulating layer (14) is a silicon oxide film having a thickness of 30 ANGSTROM or more.

10. 发明专利

DE69622607T2 未知
公开(公告)号：DE69622607T2
公开(公告)日：2003-03-13
申请号：DE69622607
申请日：1996-01-23
申请人： HITACHI LTD
发明人： WAKAGI MASATOSHI , ONISAWA KENICHI , ANDO MASAHIKO , KANEKO TOSHIKI , MINEMURA TETSUROH , OKADA TOMOHIRO
IPC分类号： G02F1/136 , G02F1/1345 , G02F1/1362 , G02F1/1368 , H01L29/786
摘要： An object of the present invention is to provide a liquid crystal display device which can be fabricated through simplified processes, provides high product yield, and is excellent in picture displaying characteristic. The liquid crystal display device of the present invention comprises a substrate (1) having thereon a plurality of drain wirings (2), a plurality of gate wirings (8) crossing the plurality of drain wirings (2) in a matrix array, a plurality of thin film transistors disposed in the vicinity of these crossings, and a plurality of pixel electrodes (4) connected to the thin film transistors, respectively, a substrate disposed in opposing relation to the substrate (1), and a liquid crystal layer sandwiched between these substrates. Each terminal portion (5; 9) of the plurality of drain wirings (2) and plurality of gate wirings (8) is constructed with a metallic film covered with a transparent conductive film.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式