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41. 发明申请

US20100015552A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR 有权
标题翻译：抗菌组合物，形成耐药性图案，化合物和酸产生剂的方法
公开(公告)号：US20100015552A1
公开(公告)日：2010-01-21
申请号：US12499610
申请日：2009-07-08
申请人： Akiya Kawaue , Yoshiyuki Utsumi , Takehiro Seshimo , Tsuyoshi Nakamura , Naoto Motoike , Hiroaki Shimizu , Kensuke Matsuzawa , Hideo Hada
发明人： Akiya Kawaue , Yoshiyuki Utsumi , Takehiro Seshimo , Tsuyoshi Nakamura , Naoto Motoike , Hiroaki Shimizu , Kensuke Matsuzawa , Hideo Hada
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0045 , C07C309/09 , C07C309/10 , C07C309/17 , C07C311/48 , C07C311/51 , C07C317/04 , C07C317/10 , C07C381/12 , C07C2601/14 , C07C2602/42 , C07C2603/74 , C07D307/92 , C07D307/94 , C07D493/18 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/12 , Y10S430/121 , Y10S430/122
摘要： A resist composition including: a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid; and an acid-generator component (B) which generates acid upon exposure, wherein said acid-generator component (B) comprises an acid generator (B1) including a compound represented by general formula (b1-11) shown below:wherein R7″ to R9″ each independently represent an aryl group or an alkyl group, wherein two of R7″ to R9″ may be bonded to each other to form a ring with the sulfur atom, and at least one of R7″ to R9″ represents a substituted aryl group having a group represented by general formula (I) shown below as a substituent; X− represents an anion; and Rf represents a fluorinated alkyl group.
摘要翻译：一种抗蚀剂组合物，其包含：在酸的作用下在碱性显影液中表现出改变的溶解度的碱成分（A）以及在暴露时产生酸的酸发生剂组分（B），其中所述酸发生剂组分（B）包含酸产生剂（B1），其包含如下所示的由通式（b1-11）表示的化合物：其中R7“ R 9“各自独立地表示芳基或烷基，其中R 7”至R 9“中的两个可以彼此键合以形成具有硫原子的环，并且R 7”至R 9“中的至少一个 “表示具有下述通式（I）表示的基团的取代芳基作为取代基; X-表示阴离子; Rf表示氟化烷基。

42. 发明授权

US08367299B2 Resist composition, method of forming resist pattern, compound and acid generator 有权
标题翻译：抗蚀剂组合物，形成抗蚀剂图案的方法，化合物和酸发生剂
公开(公告)号：US08367299B2
公开(公告)日：2013-02-05
申请号：US13233832
申请日：2011-09-15
申请人： Akiya Kawaue , Yoshiyuki Utsumi , Takehiro Seshimo , Tsuyoshi Nakamura , Naoto Motoike , Hiroaki Shimizu , Kensuke Matsuzawa , Hideo Hada
发明人： Akiya Kawaue , Yoshiyuki Utsumi , Takehiro Seshimo , Tsuyoshi Nakamura , Naoto Motoike , Hiroaki Shimizu , Kensuke Matsuzawa , Hideo Hada
IPC分类号： G03F7/039
CPC分类号： G03F7/0045 , C07C309/09 , C07C309/10 , C07C309/17 , C07C311/48 , C07C311/51 , C07C317/04 , C07C317/10 , C07C381/12 , C07C2601/14 , C07C2602/42 , C07C2603/74 , C07D307/92 , C07D307/94 , C07D493/18 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/12 , Y10S430/121 , Y10S430/122
摘要： A resist composition including: a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid; and an acid-generator component (B) which generates acid upon exposure, wherein said acid-generator component (B) comprises an acid generator (B1) including a compound represented by general formula (b1-11) shown below: wherein R7″ to R9″ each independently represent an aryl group or an alkyl group, wherein two of R7″ to R9″ may be bonded to each other to form a ring with the sulfur atom, and at least one of R7″ to R9″ represents a substituted aryl group having a group represented by general formula (I) shown below as a substituent; X− represents an anion; and Rf represents a fluorinated alkyl group.
摘要翻译：一种抗蚀剂组合物，其包含：在酸的作用下在碱性显影液中表现出改变的溶解度的碱成分（A）和产生酸的酸发生剂组分（B），其中所述酸产生剂组分（B）包含酸产生剂（B1），其包含如下所示的由通式（b1-11）表示的化合物：其中R7“至 R9“各自独立地表示芳基或烷基，其中R7”至R9“中的两个可以彼此键合以形成具有硫原子的环，并且R 7”至R 9“中的至少一个表示取代的芳基具有下述通式（I）表示的基团作为取代基的基团; X-表示阴离子; Rf表示氟化烷基。

43. 发明授权

US08124313B2 Resist composition, method of forming resist pattern, novel compound, and acid generator 有权
标题翻译：抗蚀剂组合物，抗蚀剂图案形成方法，新型化合物和酸发生剂
公开(公告)号：US08124313B2
公开(公告)日：2012-02-28
申请号：US12692513
申请日：2010-01-22
申请人： Takehiro Seshimo , Yoshiyuki Utsumi , Akiya Kawaue , Hideo Hada , Hiroaki Shimizu , Tsuyoshi Nakamura
发明人： Takehiro Seshimo , Yoshiyuki Utsumi , Akiya Kawaue , Hideo Hada , Hiroaki Shimizu , Tsuyoshi Nakamura
IPC分类号： G03F7/004 , C07D327/02
CPC分类号： G03F7/0045 , C07D327/02 , C07D327/04 , C07D497/08 , C08K5/36 , C08K5/42 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： A compound represented by general formula (I); and a compound represented by general formula (b1-1). wherein Q1 represents a divalent linkage group or a single bond; Y1 represents an alkylene group which may have a substituent or a fluorinated alkylene group which may have a substituent; X represents a cyclic group of 3 to 30 carbon atoms which may have a substituent, and has an —SO2— bond in the structure thereof; M+ represents an alkali metal ion; and A+ represents an organic cation.
摘要翻译：由通式（I）表示的化合物; 和由通式（b1-1）表示的化合物。其中Q1表示二价连接基团或单键; Y1表示可以具有取代基的亚烷基或可以具有取代基的氟化亚烷基; X表示可以具有取代基的3〜30个碳原子的环状基团，其结构中具有-SO 2 - 键; M +表示碱金属离子; 而A +代表有机阳离子。

44. 发明授权

US07927780B2 Resist composition, method of forming resist pattern, novel compound and method of producing the same, and acid generator 有权
标题翻译：抗蚀剂组合物，形成抗蚀剂图案的方法，新型化合物及其制备方法和酸发生剂
公开(公告)号：US07927780B2
公开(公告)日：2011-04-19
申请号：US12208109
申请日：2008-09-10
申请人： Akiya Kawaue , Takeshi Iwai , Hideo Hada , Shinichi Hidesaka , Tsuyoshi Kurosawa , Natsuko Maruyama , Kensuke Matsuzawa , Takehiro Seshimo , Hiroaki Shimizu , Tsuyoshi Nakamura
发明人： Akiya Kawaue , Takeshi Iwai , Hideo Hada , Shinichi Hidesaka , Tsuyoshi Kurosawa , Natsuko Maruyama , Kensuke Matsuzawa , Takehiro Seshimo , Hiroaki Shimizu , Tsuyoshi Nakamura
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , C07D407/02 , C07D409/02
CPC分类号： C07D493/18 , G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/123 , Y10S430/124 , Y10S430/125
摘要： A compound represented by formula (I); and a compound represented by formula (b1-1): wherein X represents —O—, —S—, —O—R3— or —S—R4—, wherein each of R3 and R4 independently represents an alkylene group of 1 to 5 carbon atoms; R2 represents an alkyl group of 1 to 6 carbon atoms, an alkoxy group of 1 to 6 carbon atoms, a halogenated alkyl group of 1 to 6 carbon atoms, a halogen atom, a hydroxyalkyl group of 1 to 6 carbon atoms, a hydroxyl group or a cyano group; a represents an integer of 0 to 2; Q1 represents an alkylene group of 1 to 12 carbon atoms or a single bond; Y1 represents an alkylene group of 1 to 4 carbon atoms or a fluorinated alkylene group; M+ represents an alkali metal ion; and A+ represents an organic cation.
摘要翻译：由式（I）表示的化合物; 和由式（b1-1）表示的化合物：其中X表示-O - ， - S - ， - O-R 3 - 或-S-R 4 - ，其中R 3和R 4各自独立地表示1至5的亚烷基碳原子 R2表示碳原子数为1〜6的烷基，碳原子数为1〜6的烷氧基，碳原子数为1〜6的卤代烷基，碳原子数为1〜6的卤原子，羟基烷基，羟基或氰基; a表示0〜2的整数， Q1表示1〜12个碳原子的亚烷基或单键; Y1表示1〜4个碳原子的亚烷基或氟化亚烷基; M +表示碱金属离子; 而A +代表有机阳离子。

45. 发明授权

US07723007B2 Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method 有权
标题翻译：高分子化合物，包含高分子化合物的光致抗蚀剂组合物和抗蚀图案形成方法
公开(公告)号：US07723007B2
公开(公告)日：2010-05-25
申请号：US10589681
申请日：2005-01-28
申请人： Toshiyuki Ogata , Syogo Matsumaru , Yohei Kinoshita , Hideo Hada , Daiju Shiono , Hiroaki Shimizu , Naotaka Kubota
发明人： Toshiyuki Ogata , Syogo Matsumaru , Yohei Kinoshita , Hideo Hada , Daiju Shiono , Hiroaki Shimizu , Naotaka Kubota
IPC分类号： G03F7/004 , C07C61/26 , C08F32/08
CPC分类号： G03F7/0397 , C07C69/54 , C07C2603/74 , C08F220/28 , C08F290/06 , C08F290/061 , C09D133/14 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—OCH2nR1 (1) (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5).
摘要翻译：本发明提供一种高分子化合物，其可以构成光刻胶组合物，其能够具有优异的分辨率，形成具有良好矩形性的精细图案，即使酸产生器产生的酸的酸强弱也能获得良好的抗蚀特性，并具有良好的灵敏度; 包含该高分子化合物的光致抗蚀剂组合以及使用光致抗蚀剂组合物的抗蚀剂图案形成方法。光致抗蚀剂组合物和抗蚀剂图案形成方法使用包含碱溶性基团（i）的高分子化合物，其中碱溶性基团（i）为选自醇羟基，羧基或酚类中的至少一个取代基羟基，取代基被通过通式（1）表示的酸解离的溶解抑制基团（ⅱ）保护：-CH 2 -OCH 2 n R 1（1）（其中R 1表示含有不多于20个碳的脂环族基团原子，可以含有氧原子，氮原子，硫原子或卤素原子，n表示0或1〜5的整数。

46. 发明申请

US20090226842A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：耐蚀组合物和形成耐力图案的方法
公开(公告)号：US20090226842A1
公开(公告)日：2009-09-10
申请号：US12400203
申请日：2009-03-09
申请人： Hiroaki Shimizu , Yasuhiro Yoshii , Yoshiyuki Utumi , Hideo Hada
发明人： Hiroaki Shimizu , Yasuhiro Yoshii , Yoshiyuki Utumi , Hideo Hada
IPC分类号： G03F7/20 , G03F7/027
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) consisting of a compound represented by general formula (b1) shown below (wherein Q1 represents a divalent linkage group containing an oxygen atom; Y1 represents a fluorinated alkylene group of 1 to 4 carbon atoms which may have a substituent, with the proviso that the carbon atom adjacent to the sulfur atom within the —SO3− group has a fluorine atom bonded thereto; X represents a hydrocarbon group of 3 to 30 carbon atoms which may have a substituent; and A+ represents an organic cation), and the resist composition further including an organic compound (C) which generates an acid exhibiting a weaker acid strength than the acid generated from the acid generator (B1) upon exposure. [Chemical Formula 1] X-Q1Y1—SO3+A3 (b1)
摘要翻译：一种抗蚀剂组合物，其包含在酸的作用下在碱性显影液中溶解度变化的碱成分（A）和曝光时产生酸的酸发生剂成分（B），所述酸发生剂成分（B）含有酸发生剂（b1）由下述通式（b1）表示的化合物（其中Q1表示含有氧原子的二价连接基团; Y1表示可具有取代基的1〜4个碳原子的氟化亚烷基，条件是与-SO 3 - 基中的硫原子相邻的碳原子具有氟原子键合; X表示可以具有取代基的碳原子数3〜30的烃基，A +表示有机阳离子），抗蚀剂组合物还包含有机化合物（C），该有机化合物（C）在曝光时产生的酸强度比酸产生剂（B1）产生的酸弱。 <？in-line-formula description =“In-line Formulas”end =“lead”？> [化学式1] <？in-line-formula description =“In-line formula”end =“tail”？> ？in-line-formula description =“In-line Formulas”end =“lead”？> X-Q1Y1-SO3 + A3（b1）<？in-line-formula description =“In-line Formulas”end =“tail “？>

47. 发明申请

US20090068591A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, AND ACID GENERATOR 有权
标题翻译：耐蚀组合物，形成耐药性图案的方法，新颖化合物及其制备方法和酸产生剂
公开(公告)号：US20090068591A1
公开(公告)日：2009-03-12
申请号：US12208109
申请日：2008-09-10
申请人： Akiya Kawaue , Takeshi Iwai , Hideo Hada , Shinichi Hidesaka , Tsuyoshi Kurosawa , Natsuko Maruyama , Kensuke Matsuzawa , Takehiro Seshimo , Hiroaki Shimizu , Tsuyoshi Nakamura
发明人： Akiya Kawaue , Takeshi Iwai , Hideo Hada , Shinichi Hidesaka , Tsuyoshi Kurosawa , Natsuko Maruyama , Kensuke Matsuzawa , Takehiro Seshimo , Hiroaki Shimizu , Tsuyoshi Nakamura
IPC分类号： G03F7/004 , G03F7/20 , C07D493/18
CPC分类号： C07D493/18 , G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/123 , Y10S430/124 , Y10S430/125
摘要： A compound represented by formula (I); and a compound represented by formula (b1-1): wherein X represents —O—, —S—, —O—R3— or —S—R4—, wherein each of R3 and R4 independently represents an alkylene group of 1 to 5 carbon atoms; R2 represents an alkyl group of 1 to 6 carbon atoms, an alkoxy group of 1 to 6 carbon atoms, a halogenated alkyl group of 1 to 6 carbon atoms, a halogen atom, a hydroxyalkyl group of 1 to 6 carbon atoms, a hydroxyl group or a cyano group; a represents an integer of 0 to 2; Q1 represents an alkylene group of 1 to 12 carbon atoms or a single bond; Y1 represents an alkylene group of 1 to 4 carbon atoms or a fluorinated alkylene group; M+ represents an alkali metal ion; and A+ represents an organic cation.
摘要翻译：由式（I）表示的化合物; 和由式（b1-1）表示的化合物：其中X表示-O - ， - S - ， - O-R 3 - 或-S-R 4 - ，其中R 3和R 4各自独立地表示1至5的亚烷基碳原子 R2表示碳原子数为1〜6的烷基，碳原子数为1〜6的烷氧基，碳原子数为1〜6的卤代烷基，碳原子数为1〜6的卤原子，羟基烷基，羟基或氰基; a表示0〜2的整数， Q1表示1〜12个碳原子的亚烷基或单键; Y1表示1〜4个碳原子的亚烷基或氟化亚烷基; M +表示碱金属离子; 而A +代表有机阳离子。

48. 发明申请

US20080311522A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR 有权
标题翻译：抗菌组合物，形成耐药性图案，化合物和酸产生剂的方法
公开(公告)号：US20080311522A1
公开(公告)日：2008-12-18
申请号：US12135680
申请日：2008-06-09
申请人： Takeshi Iwai , Hideo Hada , Keita Ishiduka , Akiya Kawaue , Hiroaki Shimizu , Kyoko Ohshita , Tsuyoshi Nakamura , Komei Hirahara , Yuichi Suzuki , Takehiro Seshimo
发明人： Takeshi Iwai , Hideo Hada , Keita Ishiduka , Akiya Kawaue , Hiroaki Shimizu , Kyoko Ohshita , Tsuyoshi Nakamura , Komei Hirahara , Yuichi Suzuki , Takehiro Seshimo
IPC分类号： G03F7/004 , C07C309/04 , C07C69/74
CPC分类号： C07C309/06 , C07C309/04 , C07C309/10 , C07C381/12 , C07C2603/74 , G03F7/0045 , G03F7/0397 , Y10S430/111 , Y10S430/123
摘要： A compound represented by general formula (b-14); and acid generator consisting of the compound; and a resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) consisting of a compound represented by general formula (b1-14): wherein R7″ to R9″ each independently represents an aryl group or an alkyl group, wherein two of R7″ to R9″ may be bonded to each other to form a ring with the sulfur atom, and at least one of R7″ to R9″ represents a substituted aryl group in which a portion or all of the hydrogen atoms are substituted with an alkoxyalkyloxy group or an alkoxycarbonylalkyloxy group; and X− represents an anion.
摘要翻译：由通式（b-14）表示的化合物; 和由该化合物组成的酸发生剂; 以及抗蚀剂组合物，其包含在酸的作用下在碱性显影液中溶解度变化的碱成分（A）和暴露时产生酸的酸发生剂成分（B），所述酸发生剂成分（B）含有酸发生器（B1）由通式（b1-14）表示的化合物组成：其中R7“至R9”各自独立地表示芳基或烷基，其中R7“至R9”中的两个可以键合彼此形成具有硫原子的环，并且R 7“至R 9”中的至少一个表示取代的芳基，其中部分或全部氢原子被烷氧基烷氧基或烷氧基羰基烷氧基取代; X-表示阴离子。

49. 发明授权

US08389197B2 Compound, positive resist composition and resist pattern forming method 失效
标题翻译：化合物，正光刻胶组合物和抗蚀剂图案形成方法
公开(公告)号：US08389197B2
公开(公告)日：2013-03-05
申请号：US11994602
申请日：2006-06-30
申请人： Takako Hirosaki , Daiju Shiono , Taku Hirayama , Hideo Hada
发明人： Takako Hirosaki , Daiju Shiono , Taku Hirayama , Hideo Hada
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , C07C67/343 , C07C69/712 , C07C2603/74 , G03F7/0045
摘要： The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].
摘要翻译：本发明提供能够形成具有降低的粗糙度的抗蚀剂图案的正型抗蚀剂组合物和抗蚀剂图案形成方法。正型抗蚀剂组合物包括由下述通式（I）表示的化合物。本发明还提供了使用上述正型抗蚀剂组合物的抗蚀剂图案形成方法。式（I）中，R 11和R 12分别独立地表示1〜10个碳原子的烷基或芳香族烃基，其结构中可以含有杂原子; R21〜R24各自独立地表示氢原子或酸解离的溶解抑制基团，R21〜R24中的两个表示氢原子，其余表示酸解离，溶解抑制基团。 X为下述通式（Ia）或（Ib）表示的基团。

50. 发明授权

US07910284B2 Materials for photoresist, photoresist composition and method of forming resist pattern 失效
标题翻译：用于光致抗蚀剂的材料，光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07910284B2
公开(公告)日：2011-03-22
申请号：US11838951
申请日：2007-08-15
申请人： Kyoko Kojima , Hideo Hada , Daiju Shiono
发明人： Kyoko Kojima , Hideo Hada , Daiju Shiono
IPC分类号： G03F7/004 , G03F7/30 , C07C63/00 , C07C43/23
CPC分类号： C07C39/17 , C07C39/15 , G03F7/0382 , Y10S430/106
摘要： To overcome the problem that a device performance is degraded by the edge roughness of a photoresist pattern, a mixture of polynuclear phenol compounds having, in one molecule, 0 to 6 functional groups which are chemically converted due to actions of an acid with the solubility in an alkaline developer reduced is used as a material for photoresist. In the mixture, two or more triphenyl methane structures are bonded to portions other than the functional group in the nonconjugated state. Furthermore, the mixture comprises polynuclear compounds with the average number of functional groups of 2.5 or below and includes the polynuclear compounds not having any functional group per molecule by 15% or less in the term of weight ratio, and the polynuclear phenol compounds having 3 or more functional groups per molecule by 40% or less.
摘要翻译：为了克服由光致抗蚀剂图案的边缘粗糙度降低器件性能的问题，在一分子中具有0至6个官能团的多核酚化合物的混合物，其由于酸的作用而具有溶解度而化学转化还原的碱性显影剂被用作光致抗蚀剂的材料。在该混合物中，在非共轭状态下，将两个以上的三苯基甲烷结构键合至官能团以外的部分。此外，该混合物包含平均官能团数为2.5或更低的多核化合物，并且包括在重量比方面每分子不具有15％或更少的任何官能团的多核化合物，并且多核苯酚化合物具有3或每个分子更多的官能团减少40％以下。

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