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1. 发明授权

US07910284B2 Materials for photoresist, photoresist composition and method of forming resist pattern 失效
标题翻译：用于光致抗蚀剂的材料，光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07910284B2
公开(公告)日：2011-03-22
申请号：US11838951
申请日：2007-08-15
申请人： Kyoko Kojima , Hideo Hada , Daiju Shiono
发明人： Kyoko Kojima , Hideo Hada , Daiju Shiono
IPC分类号： G03F7/004 , G03F7/30 , C07C63/00 , C07C43/23
CPC分类号： C07C39/17 , C07C39/15 , G03F7/0382 , Y10S430/106
摘要： To overcome the problem that a device performance is degraded by the edge roughness of a photoresist pattern, a mixture of polynuclear phenol compounds having, in one molecule, 0 to 6 functional groups which are chemically converted due to actions of an acid with the solubility in an alkaline developer reduced is used as a material for photoresist. In the mixture, two or more triphenyl methane structures are bonded to portions other than the functional group in the nonconjugated state. Furthermore, the mixture comprises polynuclear compounds with the average number of functional groups of 2.5 or below and includes the polynuclear compounds not having any functional group per molecule by 15% or less in the term of weight ratio, and the polynuclear phenol compounds having 3 or more functional groups per molecule by 40% or less.
摘要翻译：为了克服由光致抗蚀剂图案的边缘粗糙度降低器件性能的问题，在一分子中具有0至6个官能团的多核酚化合物的混合物，其由于酸的作用而具有溶解度而化学转化还原的碱性显影剂被用作光致抗蚀剂的材料。在该混合物中，在非共轭状态下，将两个以上的三苯基甲烷结构键合至官能团以外的部分。此外，该混合物包含平均官能团数为2.5或更低的多核化合物，并且包括在重量比方面每分子不具有15％或更少的任何官能团的多核化合物，并且多核苯酚化合物具有3或每个分子更多的官能团减少40％以下。

2. 发明授权

US07901865B2 Resist composition and process for formation of resist patterns 有权
标题翻译：抗蚀剂图案的抗蚀剂组成和工艺
公开(公告)号：US07901865B2
公开(公告)日：2011-03-08
申请号：US11574805
申请日：2005-09-02
申请人： Taku Hirayama , Daiju Shiono , Hideo Hada
发明人： Taku Hirayama , Daiju Shiono , Hideo Hada
IPC分类号： G03F7/004 , G03F7/028 , G03F7/039
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0048 , Y10S430/114
摘要： A resist composition that includes a base material component (A), which contains acid-dissociable, dissolution-inhibiting groups and exhibits increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), in which the components (A) and (B) are dissolved in the organic solvent (C), wherein the base material component (A) contains a protected form (A1) of a polyhydric phenol compound (a) having two or more phenolic hydroxyl groups and a molecular weight within a range from 300 to 2,500, in which either a portion of, or all of, the phenolic hydroxyl groups are protected with acid-dissociable, dissolution-inhibiting groups, and the organic solvent (C) comprises an alcohol.
摘要翻译：一种抗蚀剂组合物，其包含基质成分（A），其含有酸解离的溶解抑制基团，并且在酸的作用下显示出增加的碱溶解性，在曝光时产生酸的酸产生剂组分（B）和有机其中组分（A）和（B）溶解在有机溶剂（C）中的溶剂（C），其中基材组分（A）含有多元酚化合物（a）的保护形式（A1）两个或更多个酚羟基和分子量在300-2,500的范围内，其中酚羟基的一部分或全部被酸解离的溶解抑制基团保护，并且有机溶剂（ C）包含醇。

3. 发明授权

US07862981B2 Compound, positive resist composition and method of forming resist pattern 失效
标题翻译：化合物，正性抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07862981B2
公开(公告)日：2011-01-04
申请号：US11917458
申请日：2006-06-07
申请人： Daiju Shiono , Taku Hirayama , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Hideo Hada
IPC分类号： G03C1/00 , C07C39/12
CPC分类号： C07C69/712 , C07C2603/74 , G03F7/0392 , G03F7/0397
摘要： A compound including a polyhydric phenol compound represented by general formula (I) shown below (wherein R11 to R17 each independently represents an alkyl group of 1 to 10 carbon atoms or aromatic hydrocarbon group which may contain a hetero atom in the structure thereof, and X represents an aliphatic cyclic group) and having a molecular weight of 300 to 2,500, in which some or all of the hydrogen atoms of the phenolic hydroxyl groups are substituted with acid dissociable, dissolution inhibiting groups; a positive resist composition containing the compound; and a method of forming a resist pattern using the positive resist composition.
摘要翻译：含有下述通式（I）表示的多元酚化合物的化合物（其中，R 11〜R 17各自独立地表示碳原子数1〜10的烷基或其结构中可含有杂原子的芳香族烃基，X 代表脂族环基），其分子量为300-2,500，其中酚羟基的一些或全部氢原子被酸解离的溶解抑制基团取代; 含有该化合物的正性抗蚀剂组合物; 以及使用正性抗蚀剂组合物形成抗蚀剂图案的方法。

4. 发明申请

US20100009284A1 COMPOUND, POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 失效
标题翻译：化合物，阳性电阻组合物和形成电阻图案的方法
公开(公告)号：US20100009284A1
公开(公告)日：2010-01-14
申请号：US11917458
申请日：2006-06-07
申请人： Daiju Shiono , Taku Hirayama , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Hideo Hada
IPC分类号： G03F7/20 , C07C39/17 , C07C69/712 , G03F7/004
CPC分类号： C07C69/712 , C07C2603/74 , G03F7/0392 , G03F7/0397
摘要： A compound including a polyhydric phenol compound represented by general formula (I) shown below (wherein R11 to R17 each independently represents an alkyl group of 1 to 10 carbon atoms or aromatic hydrocarbon group which may contain a hetero atom in the structure thereof, and X represents an aliphatic cyclic group) and having a molecular weight of 300 to 2,500, in which some or all of the hydrogen atoms of the phenolic hydroxyl groups are substituted with acid dissociable, dissolution inhibiting groups; a positive resist composition containing the compound; and a method of forming a resist pattern using the positive resist composition.
摘要翻译：含有下述通式（I）表示的多元酚化合物的化合物（其中，R 11〜R 17各自独立地表示碳原子数1〜10的烷基或其结构中可含有杂原子的芳香族烃基，X 代表脂族环基），其分子量为300-2,500，其中酚羟基的一些或全部氢原子被酸解离的溶解抑制基团取代; 含有该化合物的正性抗蚀剂组合物; 以及使用正性抗蚀剂组合物形成抗蚀剂图案的方法。

5. 发明申请

US20090202939A1 COMPOUND, POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 有权
标题翻译：化合物，阳离子组合物和形成电阻图案的方法
公开(公告)号：US20090202939A1
公开(公告)日：2009-08-13
申请号：US12299371
申请日：2007-03-20
申请人： Daiju Shiono , Taku Hirayama , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Hideo Hada
IPC分类号： G03F7/004 , C07C69/612 , G03F7/20
CPC分类号： C07C69/712 , C07C2603/74 , G03F7/0045 , G03F7/0392
摘要： Disclosed are a compound that can be used for a resist composition, a positive resist composition that includes the compound, and a method for forming a resist pattern.Specifically disclosed is a compound represented by a formula (A-1). In the formula (A-1), R11 to R17 each represents an alkyl group or an aromatic hydrocarbon group; g and j each represents an integer of 1 or greater, and k and q each represents an integer of 0 or greater, provided that g+j+k+q is not greater than 5; b represents an integer of 1 or greater, and l and m each represents an integer of 0 or greater, provided that b+l+m is not greater than 4; c represents an integer of 1 or greater, and n and o each represents an integer of 0 or greater, provided that c+n+o is not greater than 4; A represents a trivalent aromatic cyclic group, alkyl group or aliphatic cyclic group, or a trivalent organic group having an aromatic cyclic group or an aliphatic cyclic group; and Z represents a group represented by a formula (z1). In the formula (z1), Y represents an alkylene group, a divalent aromatic hydrocarbon group or aliphatic cyclic group, or a divalent organic group having an aromatic hydrocarbon group or an aliphatic cyclic group; and R′ represents an acid dissociable, dissolution inhibiting group.
摘要翻译：公开了可用于抗蚀剂组合物的化合物，包含该化合物的正型抗蚀剂组合物和形成抗蚀剂图案的方法。具体公开的是由式（A-1）表示的化合物。式（A-1）中，R 11〜R 17表示烷基或芳香族烃基， g和j各自表示1或更大的整数，并且k和q各自表示0或更大的整数，条件是g + j + k + q不大于5; b表示1或更大的整数，并且l和m各自表示0或更大的整数，条件是b + 1 + m不大于4; c表示1或更大的整数，并且n和o各自表示0或更大的整数，条件是c + n + o不大于4; A表示三价芳族环状基团，烷基或脂肪族环状基团，或具有芳香族环状基团或脂肪族环状基团的三价有机基团， Z表示由式（z1）表示的基团。式（z1）中，Y表示亚烷基，二价芳香族烃基或脂肪族环状基团，或具有芳香族烃基或脂肪族环状基团的二价有机基团，并且R'表示酸解离，溶解抑制基团。

6. 发明申请

US20090117488A1 COMPOUND, POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 失效
标题翻译：化合物，阳性电阻组合物和电阻图案形成方法
公开(公告)号：US20090117488A1
公开(公告)日：2009-05-07
申请号：US11994602
申请日：2006-06-30
申请人： Takako Hirosaki , Daiju Shiono , Taku Hirayama , Hideo Hada
发明人： Takako Hirosaki , Daiju Shiono , Taku Hirayama , Hideo Hada
IPC分类号： G03F7/004 , C07C69/76 , G03F7/26
CPC分类号： G03F7/0397 , C07C67/343 , C07C69/712 , C07C2603/74 , G03F7/0045
摘要： The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].
摘要翻译：本发明提供能够形成具有降低的粗糙度的抗蚀剂图案的正型抗蚀剂组合物和抗蚀剂图案形成方法。正型抗蚀剂组合物包括由下述通式（I）表示的化合物。本发明还提供了使用上述正型抗蚀剂组合物的抗蚀剂图案形成方法。式（I）中，R 11和R 12分别独立地表示1〜10个碳原子的烷基或芳香族烃基，其结构中可以含有杂原子; R21〜R24各自独立地表示氢原子或酸解离的溶解抑制基团，R21〜R24中的两个表示氢原子，其余表示酸解离，溶解抑制基团。 X为下述通式（Ia）或（Ib）表示的基团。

7. 发明申请

US20090035691A1 POSITIVE RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN AND COMPOUND 有权
标题翻译：正电阻组合物，形成电阻图案和化合物的方法
公开(公告)号：US20090035691A1
公开(公告)日：2009-02-05
申请号：US11817012
申请日：2006-02-20
申请人： Daiju Shiono , Taku Hirayama , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Hideo Hada
IPC分类号： G03F7/004 , G03F7/20 , C07C69/76 , C07C39/15
CPC分类号： G03F7/0397 , C07C69/712 , C07C2601/14 , C07C2603/74 , G03F7/0045 , G03F7/0392 , Y10S430/106
摘要： A positive resist composition that includes a base material component (A) that contains an acid-dissociable, dissolution-inhibiting group and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base material component (A) contains a compound (A1), in which either a portion of, or all of, the hydrogen atoms of phenolic hydroxyl groups within a polyhydric phenol compound with a molecular weight of 300 to 2,500 represented by a general formula (I) shown below have been substituted with at least one group selected from the group consisting of acid-dissociable, dissolution-inhibiting groups represented by a general formula (II) shown below and acid-dissociable, dissolution-inhibiting groups represented by a general formula (III) shown below.
摘要翻译：一种正性抗蚀剂组合物，其包含含有酸解离的溶解抑制基团并且在酸的作用下表现出增加的碱溶解性的基材成分（A）和暴露时产生酸的酸产生剂成分（B），其中基材成分（A）含有化合物（A1），其中分子量为300〜2,500的多元酚化合物中的酚羟基的氢原子的一部分或全部由通式下述的（I）所示的化合物被选自由下述通式（II）表示的酸解离性，溶解抑制基团和酸解离性，通式式（III）如下所示。

8. 发明申请

US20080020288A1 Resist Composition and Process for Formation of Resist Patterns 有权
标题翻译：抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20080020288A1
公开(公告)日：2008-01-24
申请号：US11574805
申请日：2005-09-02
申请人： Taku Hirayama , Daiju Shiono , Hideo Hada
发明人： Taku Hirayama , Daiju Shiono , Hideo Hada
IPC分类号： G03C1/04 , G03C5/00
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0048 , Y10S430/114
摘要： A resist composition that includes a base material component (A), which contains acid-dissociable, dissolution-inhibiting groups and exhibits increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), in which the components (A) and (B) are dissolved in the organic solvent (C), wherein the base material component (A) contains a protected form (A1) of a polyhydric phenol compound (a) having two or more phenolic hydroxyl groups and a molecular weight within a range from 300 to 2,500, in which either a portion of, or all of, the phenolic hydroxyl groups are protected with acid-dissociable, dissolution-inhibiting groups, and the organic solvent (C) comprises an alcohol.
摘要翻译：一种抗蚀剂组合物，其包含基质成分（A），其含有酸解离的溶解抑制基团，并且在酸的作用下显示出增加的碱溶解性，在曝光时产生酸的酸产生剂组分（B）其中组分（A）和（B）溶解在有机溶剂（C）中的溶剂（C），其中基材组分（A）含有多元酚化合物（a）的保护形式（A1）两个或更多个酚羟基和分子量在300-2,500的范围内，其中酚羟基的一部分或全部被酸解离的溶解抑制基团保护，并且有机溶剂（ C）包含醇。

9. 发明申请

US20070275328A1 Decomposable composition and method for using the same 审中-公开
标题翻译：分解组合物及其使用方法
公开(公告)号：US20070275328A1
公开(公告)日：2007-11-29
申请号：US11807042
申请日：2007-05-24
申请人： Daiju Shiono , Hideo Hada
发明人： Daiju Shiono , Hideo Hada
IPC分类号： G03F7/26
CPC分类号： G03F7/0045 , G03F7/0392
摘要： A decomposable composition including a compound (I) represented by general formula (I) shown below and a compound (II) represented by general formula (II) shown below: [wherein R1 represents a hydrogen atom, a halogen atom, an alkyl group or a halogenated alkyl group; and R2, R3 and R4 each independently represents a monovalent organic group.]
摘要翻译：含有下述通式（I）表示的化合物（I）和下述通式（II）表示的化合物（II））的分解性组合物：[其中R 1表示氢原子，卤素原子，烷基或卤代烷基; R 2，R 3和R 4各自独立地表示一价有机基团。

10. 发明授权

US08389197B2 Compound, positive resist composition and resist pattern forming method 失效
标题翻译：化合物，正光刻胶组合物和抗蚀剂图案形成方法
公开(公告)号：US08389197B2
公开(公告)日：2013-03-05
申请号：US11994602
申请日：2006-06-30
申请人： Takako Hirosaki , Daiju Shiono , Taku Hirayama , Hideo Hada
发明人： Takako Hirosaki , Daiju Shiono , Taku Hirayama , Hideo Hada
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , C07C67/343 , C07C69/712 , C07C2603/74 , G03F7/0045
摘要： The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].
摘要翻译：本发明提供能够形成具有降低的粗糙度的抗蚀剂图案的正型抗蚀剂组合物和抗蚀剂图案形成方法。正型抗蚀剂组合物包括由下述通式（I）表示的化合物。本发明还提供了使用上述正型抗蚀剂组合物的抗蚀剂图案形成方法。式（I）中，R 11和R 12分别独立地表示1〜10个碳原子的烷基或芳香族烃基，其结构中可以含有杂原子; R21〜R24各自独立地表示氢原子或酸解离的溶解抑制基团，R21〜R24中的两个表示氢原子，其余表示酸解离，溶解抑制基团。 X为下述通式（Ia）或（Ib）表示的基团。

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