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1. 发明申请

US20080166655A1 Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method 有权
标题翻译：高分子化合物，包含聚合物化合物的光致抗蚀剂组合物和抗蚀剂图案形成方法
公开(公告)号：US20080166655A1
公开(公告)日：2008-07-10
申请号：US10589681
申请日：2005-01-28
申请人： Toshiyuki Ogata , Syogo Matsumaru , Yohei Kinoshita , Hideo Hada , Daiju Shiono , Hiroaki Shimizu , Naotaka Kubota
发明人： Toshiyuki Ogata , Syogo Matsumaru , Yohei Kinoshita , Hideo Hada , Daiju Shiono , Hiroaki Shimizu , Naotaka Kubota
IPC分类号： G03F7/004 , C08G65/34 , C07C69/533 , C08G63/00 , G03F7/26 , C07C69/52
CPC分类号： G03F7/0397 , C07C69/54 , C07C2603/74 , C08F220/28 , C08F290/06 , C08F290/061 , C09D133/14 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—OCH2nR1 (1) (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5.).
摘要翻译：本发明提供一种高分子化合物，其可以构成光刻胶组合物，其能够具有优异的分辨率，形成具有良好矩形性的精细图案，即使酸产生器产生的酸的酸强弱也能获得良好的抗蚀特性，并具有良好的灵敏度; 包含该高分子化合物的光致抗蚀剂组合物; 以及使用光致抗蚀剂组合物的抗蚀剂图案形成方法。光致抗蚀剂组合物和抗蚀剂图案形成方法使用包含碱溶性基团（i）的高分子化合物，其中碱溶性基团（i）为选自醇羟基，羧基或酚类中的至少一个取代基羟基，取代基被通过通式（1）表示的酸解离的溶解抑制基团（ii）保护：<？in-line-formula description =“In-line Formulas”end =“lead”？ > -CH 2 - - - - - - - - - - - - - - （2）（其中R 1表示含有不多于20个碳原子的脂环族基团，并且可以含有氧原子，氮原子，硫原子或卤素原子，n表示0或1〜5的整数。

2. 发明授权

US07723007B2 Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method 有权
标题翻译：高分子化合物，包含高分子化合物的光致抗蚀剂组合物和抗蚀图案形成方法
公开(公告)号：US07723007B2
公开(公告)日：2010-05-25
申请号：US10589681
申请日：2005-01-28
申请人： Toshiyuki Ogata , Syogo Matsumaru , Yohei Kinoshita , Hideo Hada , Daiju Shiono , Hiroaki Shimizu , Naotaka Kubota
发明人： Toshiyuki Ogata , Syogo Matsumaru , Yohei Kinoshita , Hideo Hada , Daiju Shiono , Hiroaki Shimizu , Naotaka Kubota
IPC分类号： G03F7/004 , C07C61/26 , C08F32/08
CPC分类号： G03F7/0397 , C07C69/54 , C07C2603/74 , C08F220/28 , C08F290/06 , C08F290/061 , C09D133/14 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—OCH2nR1 (1) (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5).
摘要翻译：本发明提供一种高分子化合物，其可以构成光刻胶组合物，其能够具有优异的分辨率，形成具有良好矩形性的精细图案，即使酸产生器产生的酸的酸强弱也能获得良好的抗蚀特性，并具有良好的灵敏度; 包含该高分子化合物的光致抗蚀剂组合以及使用光致抗蚀剂组合物的抗蚀剂图案形成方法。光致抗蚀剂组合物和抗蚀剂图案形成方法使用包含碱溶性基团（i）的高分子化合物，其中碱溶性基团（i）为选自醇羟基，羧基或酚类中的至少一个取代基羟基，取代基被通过通式（1）表示的酸解离的溶解抑制基团（ⅱ）保护：-CH 2 -OCH 2 n R 1（1）（其中R 1表示含有不多于20个碳的脂环族基团原子，可以含有氧原子，氮原子，硫原子或卤素原子，n表示0或1〜5的整数。

3. 发明授权

US07807328B2 Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method 有权
标题翻译：高分子化合物，包含高分子化合物的光致抗蚀剂组合物和抗蚀图案形成方法
公开(公告)号：US07807328B2
公开(公告)日：2010-10-05
申请号：US10588866
申请日：2005-01-20
申请人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0046 , C08G61/08 , G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： The present invention provide a polymer compound whereby the alkali solubility greatly changes before and after exposure in a chemically amplified positive resist, and a photoresist composition including the polymer compound and a resist pattern formation method which can form a fine pattern with high resolution. The photoresist composition and the resist pattern formation method use the polymer compound including at least one substituent group selected from an alcoholic hydroxyl group, a phenolic hydroxyl group, or a carboxyl group as an alkali soluble group (i), wherein the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—O—R (1) (wherein R represents an organic group containing no more than 20 carbon atoms and at least one hydrophilic group).
摘要翻译：本发明提供了一种聚合物化合物，其中碱溶解度在化学放大的正性抗蚀剂中暴露之前和之后剧烈变化，以及包含高分子化合物的光致抗蚀剂组合物和能够以高分辨率形成精细图案的抗蚀剂图案形成方法。光致抗蚀剂组合物和抗蚀图案形成方法使用包含至少一个选自醇羟基，酚羟基或羧基的取代基的聚合物化合物作为碱溶性基团（i），其中取代基被保护由通式（1）表示的酸解离的溶解抑制基团（ⅱ）：-CH 2 -O-R（1）（其中R表示含有不超过20个碳原子的有机基团和至少一个亲水基团）。

4. 发明授权

US07592122B2 Photoresist composition, and low-molecular compound and high-molecular compound for the photoresist composition 有权
标题翻译：光致抗蚀剂组合物和用于光致抗蚀剂组合物的低分子化合物和高分子化合物
公开(公告)号：US07592122B2
公开(公告)日：2009-09-22
申请号：US10553315
申请日：2004-04-15
申请人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Mitsuru Sato , Syogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Mitsuru Sato , Syogo Matsumaru , Hideo Hada
IPC分类号： G03F7/004 , C08C19/28
CPC分类号： C07C43/126 , C07C43/162 , C07C43/1747 , C07C69/96 , C07C2601/14 , C07C2602/42 , G03F7/0046 , G03F7/0395 , G03F7/0397 , G03F7/0757 , Y10S430/108
摘要： A high-molecular compound and a low-molecular compound or both having an alkali-soluble site (i) wherein at least a part of the alkali-soluble site (i) is protected with (ii) a halogen atom-containing acetal type acid-dissociative, dissolution inhibiting group, as well as a photoresist composition comprising the same. The photoresist composition is highly stable during storage and can give a resist pattern excellent in sectional rectangular shape and having high transparency to an exposure light, particularly a light having a wavelength of 300 nm or less.
摘要翻译：具有碱溶性部位（i）的高分子化合物和低分子化合物或二者，其中至少一部分碱溶性部位（i）用（ⅱ）含卤原子的缩醛型酸 - 解离，溶解抑制基团，以及包含其的光致抗蚀剂组合物。光致抗蚀剂组合物在保存期间高度稳定，并且可以得到截面矩形形状优异并且对曝光光，特别是波长为300nm以下的光具有高透明度的抗蚀剂图案。

5. 发明申请

US20060210913A1 Photoresist composition and, used in the photoresist composition, low-molecular compound and high-molecular compound 有权
标题翻译：光致抗蚀剂组合物，用于光致抗蚀剂组合物中的低分子化合物和高分子化合物
公开(公告)号：US20060210913A1
公开(公告)日：2006-09-21
申请号：US10553315
申请日：2004-04-15
申请人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Mitsuru Sato , Syogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Mitsuru Sato , Syogo Matsumaru , Hideo Hada
IPC分类号： G03C1/76
CPC分类号： C07C43/126 , C07C43/162 , C07C43/1747 , C07C69/96 , C07C2601/14 , C07C2602/42 , G03F7/0046 , G03F7/0395 , G03F7/0397 , G03F7/0757 , Y10S430/108
摘要： A high-molecular compound and a low-molecular compound or both having an alkali-soluble site (i) wherein at least a part of the alkali-soluble site (i) is protected with (ii) a halogen atom-containing acetal type acid-dissociative, dissolution inhibiting group, as well as a photoresist composition comprising the same. The photoresist composition is highly stable during storage and can give a resist pattern excellent in sectional rectangular shape and having high transparency to an exposure light, particularly a light having a wavelength of 300 nm or less.
摘要翻译：具有碱溶性部位（i）的高分子化合物和低分子化合物或二者，其中至少一部分碱溶性部位（i）用（ⅱ）含卤原子的缩醛型酸 - 解离，溶解抑制基团，以及包含其的光致抗蚀剂组合物。光致抗蚀剂组合物在保存期间高度稳定，并且可以得到截面矩形形状优异并且对曝光光，特别是波长为300nm以下的光具有高透明度的抗蚀剂图案。

6. 发明申请

US20100151383A1 POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN 有权
标题翻译：聚合物化合物，包含这种聚合物化合物的光电组合物和形成耐蚀图案的方法
公开(公告)号：US20100151383A1
公开(公告)日：2010-06-17
申请号：US12707462
申请日：2010-02-17
申请人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada , Masaaki Yoshida
发明人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada , Masaaki Yoshida
IPC分类号： G03F7/20 , G03F7/004 , C08F224/00
CPC分类号： C08F220/28 , C07C69/54 , C07C2601/14 , C08F222/1006 , C08F232/08 , G03F7/0046 , G03F7/0392 , G03F7/0397
摘要： A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: [Formula 1] —CH2—O-AO—CH2—]n (1) (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).
摘要翻译：化学放大型正性抗蚀剂体系内的曝光后的状态下的碱溶解度显着变化的高分子化合物以及包含这种高分子化合物的光致抗蚀剂组合物和形成抗蚀剂的方法图案，能够以高分辨率形成精细图案。高分子化合物作为碱溶性基团（i）包括其中选自醇羟基，羧基和酚羟基的基团用酸解离的溶解抑制基团（ii）保护的取代基，通式（1）表示的化合物：[式1] -CH 2 OAOO-CH 2 - ] n（1）（其中，A表示1〜20个碳原子的有机基团， 1，n表示1〜4的整数）。

7. 发明授权

US07700259B2 Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern 有权
标题翻译：高分子化合物，含有该高分子化合物的光致抗蚀剂组合物，以及形成抗蚀剂图案的方法
公开(公告)号：US07700259B2
公开(公告)日：2010-04-20
申请号：US11578189
申请日：2005-04-05
申请人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada , Masaaki Yoshida
发明人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada , Masaaki Yoshida
IPC分类号： G03C1/00 , C07C69/74
CPC分类号： C08F220/28 , C07C69/54 , C07C2601/14 , C08F222/1006 , C08F232/08 , G03F7/0046 , G03F7/0392 , G03F7/0397
摘要： A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).
摘要翻译：化学放大型正性抗蚀剂体系内的曝光后的状态下的碱溶解度显着变化的高分子化合物以及包含这种高分子化合物的光致抗蚀剂组合物和形成抗蚀剂的方法图案，能够以高分辨率形成精细图案。高分子化合物作为碱溶性基团（i）包括其中选自醇羟基，羧基和酚羟基的基团用酸解离的溶解抑制基团（ii）保护的取代基，（1）表示的化合物（式中，A表示1〜20个碳原子的至少n + 1的有机基团，n表示1〜4的整数）。

8. 发明申请

US20080193871A1 Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern 审中-公开
标题翻译：浸渍曝光的正抗蚀组合物和形成抗蚀剂图案的方法
公开(公告)号：US20080193871A1
公开(公告)日：2008-08-14
申请号：US11577003
申请日：2005-09-30
申请人： Toshiyuki Ogata , Hiromitsu Tsuji , Syogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Hiromitsu Tsuji , Syogo Matsumaru , Hideo Hada
IPC分类号： G03F7/004 , G03F7/26
CPC分类号： G03F7/0397
摘要： A positive resist composition for immersion exposure that includes a resin component (A) that exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the resin component (A) includes a resin (A1) that has alkali-soluble groups (i) having a hydrogen atom, and in a portion of these alkali-soluble groups (i), the hydrogen atom is substituted with an acid-dissociable, dissolution-inhibiting group (I) represented by a general formula (I) shown below [wherein, Z represents an aliphatic cyclic group; n represents either 0 or an integer from 1 to 3; and R1 and R2 each represent, independently, a hydrogen atom or a lower alkyl group of 1 to 5 carbon atoms].
摘要翻译：一种用于浸渍曝光的正型抗蚀剂组合物，包括在酸作用下表现出增加的碱溶性的树脂组分（A）和在曝光时产生酸的酸产生剂组分（B），其中树脂组分（A）包括树脂（i）具有氢原子的碱溶性基团（A1），并且在这些碱溶性基团（i）的一部分中，氢原子被酸解离的溶解抑制基团（I）取代，通式（I）表示的化合物[式中，Z表示脂肪族环状基团， n表示0或1至3的整数; 和R 1和R 2各自独立地表示氢原子或1-5个碳原子的低级烷基]。

9. 发明申请

US20070172757A1 Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method 有权
标题翻译：高分子化合物，包含高分子化合物的光致抗蚀剂组合物和抗蚀图案形成方法
公开(公告)号：US20070172757A1
公开(公告)日：2007-07-26
申请号：US10588866
申请日：2005-01-20
申请人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada
IPC分类号： G03C1/00
CPC分类号： G03F7/0046 , C08G61/08 , G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： The present invention provide a polymer compound whereby the alkali solubility greatly changes before and after exposure in a chemically amplified positive resist, and a photoresist composition including the polymer compound and a resist pattern formation method which can form a fine pattern with high resolution. The photoresist composition and the resist pattern formation method use the polymer compound including at least one substituent group selected from an alcoholic hydroxyl group, a phenolic hydroxyl group, or a carboxyl group as an alkali soluble group (i), wherein the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—O—R (1)(wherein R represents an organic group containing no more than 20 carbon atoms and at least one hydrophilic group).
摘要翻译：本发明提供了一种聚合物化合物，其中碱溶解度在化学放大的正性抗蚀剂中暴露之前和之后剧烈变化，以及包含高分子化合物的光致抗蚀剂组合物和能够以高分辨率形成精细图案的抗蚀剂图案形成方法。光致抗蚀剂组合物和抗蚀剂图案形成方法使用包含至少一个选自醇羟基，酚羟基或羧基的取代基的聚合物化合物作为碱溶性基团（i），其中取代基被保护通过由通式（1）表示的酸解离的溶解抑制基团（ⅱ）：<？in-line-formula description =“In-line Formulas”end =“lead”→> CH 2 （式中，R表示含有不超过20个碳原子的有机基团和至少一个亲水基团）。

10. 发明授权

US08741538B2 Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern 有权
标题翻译：高分子化合物，含有该高分子化合物的光致抗蚀剂组合物，以及形成抗蚀剂图案
公开(公告)号：US08741538B2
公开(公告)日：2014-06-03
申请号：US12707462
申请日：2010-02-17
申请人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada , Masaaki Yoshida
发明人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada , Masaaki Yoshida
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： C08F220/28 , C07C69/54 , C07C2601/14 , C08F222/1006 , C08F232/08 , G03F7/0046 , G03F7/0392 , G03F7/0397
摘要： A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: [Formula 1] —CH2—O-AO—CH2—]n (1) (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).
摘要翻译：化学放大型正性抗蚀剂体系内的曝光后的状态下的碱溶解度显着变化的高分子化合物以及包含这种高分子化合物的光致抗蚀剂组合物和形成抗蚀剂的方法图案，能够以高分辨率形成精细图案。高分子化合物作为碱溶性基团（i）包括其中选自醇羟基，羧基和酚羟基的基团用酸解离的溶解抑制基团（ii）保护的取代基，通式（1）表示：[式1] -CH 2 -O-AO-CH 2 - ] n（1）（其中，A表示1〜20个碳原子的有机基团， 1，n表示1〜4的整数）。

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