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41. 发明授权

US06746942B2 SEMICONDUCTOR THIN FILM AND METHOD OF FABRICATING SEMICONDUCTOR THIN FILM, APPARATUS FOR FABRICATING SINGLE CRYSTAL SEMICONDUCTOR THIN FILM, AND METHOD OF FABRICATING SINGLE CRYSTAL THIN FILM, SINGLE CRYSTAL THIN FILM SUBSTRATE, AND SEMICONDUCTOR DEVICE 失效
标题翻译：半导体薄膜和制造半导体薄膜的方法，用于制造单晶半导体薄膜的方法，以及制造单晶薄膜，单晶薄膜基板和半导体器件的方法
公开(公告)号：US06746942B2
公开(公告)日：2004-06-08
申请号：US09946898
申请日：2001-09-05
申请人： Junichi Sato , Setsuo Usui , Yasuhiro Sakamoto , Yoshifumi Mori , Hideharu Nakajima
发明人： Junichi Sato , Setsuo Usui , Yasuhiro Sakamoto , Yoshifumi Mori , Hideharu Nakajima
IPC分类号： H01L213205
CPC分类号： H01L21/02686 , C30B1/00 , C30B29/06 , H01L21/02532 , H01L21/02598 , H01L21/2026
摘要： A method of fabricating a single crystal thin film includes: forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grains are aligned in an approximately regular pattern; and subjecting the polycrystalline thin film to a second heat-treatment, thereby forming a single crystal thin film in which the polycrystalline grains are bonded to each other. In this method, either the first heat-treatment or the second heat-treatment may be performed by irradiation of laser beams, preferably, emitted from an excimer laser. A single crystal thin film formed by this fabrication method has a performance higher than a related art polycrystalline thin film and is suitable for fabricating a device having stable characteristics. The single crystal thin film can be fabricated for a short-time by using laser irradiation as the heat-treatments.
摘要翻译：制造单晶薄膜的方法包括：在绝缘基底上形成非单晶薄膜; 对非单晶薄膜进行第一次热处理，从而形成多晶晶粒以大致规则的图案排列的多晶薄膜; 并对多晶薄膜进行第二次热处理，从而形成多晶粒彼此结合的单晶薄膜。在这种方法中，第一热处理或第二热处理可以通过激光束的照射，优选地从准分子激光器发射来进行。通过该制造方法形成的单晶薄膜具有比现有技术的多晶薄膜更高的性能，并且适合于制造具有稳定特性的器件。通过使用激光照射作为热处理，可以短时间制造单晶薄膜。

42. 发明授权

US06396560B1 Method of producing liquid crystal display panel 失效
标题翻译：制作液晶显示面板的方法
公开(公告)号：US06396560B1
公开(公告)日：2002-05-28
申请号：US09667758
申请日：2000-09-21
申请人： Takashi Noguchi , Setsuo Usui , Hideharu Nakajima
发明人： Takashi Noguchi , Setsuo Usui , Hideharu Nakajima
IPC分类号： G02F113
CPC分类号： H01L21/02686 , G02F1/13454 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L29/6675 , H01L29/78672 , Y10S117/904
摘要： Disclosed is a method capable of producing, at a high throughput, a large-area FPD such as a liquid crystal display panel or O-ELD having a horizontal scanning circuit portion including a TFT characteristic having a high drive current (a high mobility), and a pixel portion and a vertical scanning circuit portion each of which contains crystal grains excellent in uniformity. The method includes the steps of: irradiating a location, in which a horizontal scanning circuit equivalent portion is to be formed, of an amorphous silicon thin film panel to be crystallized with 10 to 30 shots of a laser beam having a uniform energy density distribution and having a rectangular shape of a long-side larger than a width of the amorphous silicon thin film panel and a short-side larger than a short-side of the horizontal scanning circuit equivalent portion, in a state in which a relative positional relationship between the amorphous silicon thin film panel and the laser beam is fixed; and irradiating a location, in which a vertical scanning circuit portion and a pixel portion are to be formed, of the amorphous silicon thin film panel with the laser beam while moving the laser beam relative to the amorphous silicon thin film panel along the length direction of the amorphous silicon thin film panel.
摘要翻译：公开了一种能够以高产量生产具有包括具有高驱动电流（高迁移率）的TFT特性的水平扫描电路部分的诸如液晶显示面板或O-ELD的大面积FPD的方法，以及每个都含有均匀性优异的晶粒的像素部分和垂直扫描电路部分。该方法包括以下步骤：用具有均匀的能量密度分布的激光束以10至30个射束照射要形成水平扫描电路等效部分的位置的非晶硅薄膜面板，具有比非晶硅薄膜面板的宽度大的长边的长边形状以及大于水平扫描电路等效部分的短边的短边的状态，其中在相对位置关系非晶硅薄膜面板和激光束固定; 并且在激光束的相对于非晶硅薄膜面板相对于非晶硅薄膜面板的长度方向移动激光束的同时，用激光照射其中要形成垂直扫描电路部分和像素部分的位置，非晶硅薄膜面板。

43. 发明授权

US06274903B1 Memory device having a storage region is constructed with a plurality of dispersed particulates 失效
标题翻译：具有存储区域的存储器件由多个分散的颗粒构成
公开(公告)号：US06274903B1
公开(公告)日：2001-08-14
申请号：US09404479
申请日：1999-09-24
申请人： Kazumasa Nomoto , Dharam Pal Gosain , Setsuo Usui , Takashi Noguchi
发明人： Kazumasa Nomoto , Dharam Pal Gosain , Setsuo Usui , Takashi Noguchi
IPC分类号： H01L29788
CPC分类号： H01L27/1203 , B82Y10/00 , H01L21/84 , H01L27/115 , H01L29/7883
摘要： A memory device, a manufacturing method thereof, and an integrated circuit thereof are provided for storing information over a long period of time even if the memory device is manufactured at low temperatures. On a substrate made of glass, etc., a memory transistor and a selection transistor are formed, with a silicon nitride film and a silicon dioxide film in between. The memory transistor and the selection transistor are connected in series at a second impurity region. The conduction region for memory of the memory transistor is made of non-single crystal silicon and a storage region comprises a plurality of dispersed particulates made of non-single crystal silicon. Therefore, electrical charges can be stored partially if a tunnel insulating film has any defects. The tunnel insulating film is formed by exposing the surface of the conduction region for memory to the ionized gas containing oxygen atoms.
摘要翻译：提供了一种存储器件，其制造方法及其集成电路，用于长时间存储信息，即使存储器件在低温下制造。在由玻璃等制成的基板上，形成存储晶体管和选择晶体管，其间具有氮化硅膜和二氧化硅膜。存储晶体管和选择晶体管在第二杂质区域串联连接。用于存储晶体管的存储器的导电区域由非单晶硅制成，并且存储区域包括由非单晶硅制成的多个分散的微粒。因此，如果隧道绝缘膜有任何缺陷，则可以部分地存储电荷。隧道绝缘膜通过将用于记忆的导电区域的表面暴露于含有氧原子的电离气体而形成。

44. 发明授权

US06190949B1 Silicon thin film, group of silicon single crystal grains and formation process thereof, and semiconductor device, flash memory cell and fabrication process thereof 失效
标题翻译：硅薄膜，一组硅单晶晶粒及其形成工艺，以及半导体器件，闪存单元及其制造工艺
公开(公告)号：US06190949B1
公开(公告)日：2001-02-20
申请号：US08861197
申请日：1997-05-21
申请人： Takashi Noguchi , Yasuhiro Kanaya , Masafumi Kunii , Yuji Ikeda , Setsuo Usui
发明人： Takashi Noguchi , Yasuhiro Kanaya , Masafumi Kunii , Yuji Ikeda , Setsuo Usui
IPC分类号： H01L2100
CPC分类号： H01L21/02686 , B82Y10/00 , H01L21/02532 , H01L21/02598 , H01L21/02609 , H01L21/02691 , H01L21/2026 , H01L21/28273 , H01L29/66765 , H01L29/78678 , Y10T428/24372
摘要： A process of forming a silicon thin film includes the steps of: irradiating a pulsed rectangular ultraviolet beam on an amorphous or polycrystalline silicon layer formed on a base body, to thereby form a silicon thin film composed of a group of silicon single crystal grains which are each approximately rectangular-shaped and which are arranged in a grid pattern on the base body. In this process, the moved amount of a ultraviolet beam irradiating position in a period from completion of an irradiation of the rectangular ultraviolet beam to starting of the next irradiation of the rectangular ultraviolet beam is specified at 40 &mgr;m or less, and a ratio of the moved amount to a width of the rectangular ultraviolet beam measured in the movement direction thereof is in a range of 0.1 to 5%. Further, a selected orientation of the silicon single crystal grains to the surface of the base body is approximately the direction.
摘要翻译：形成硅薄膜的方法包括以下步骤：在形成在基体上的非晶或多晶硅层上照射脉冲的矩形紫外线，从而形成由一组硅单晶粒构成的硅薄膜，每个大致矩形，并且在基体上以网格图案排列。在该处理中，在从矩形紫外线的照射完成到矩形紫外线的下一次照射开始的期间内的紫外线照射位置的移动量规定为40μm以下，在其移动方向上测量的矩形紫外线的宽度的移动量在0.1〜5％的范围内。此外，硅单晶粒到基体表面的选定取向大约为<100>方向。

45. 发明授权

US6130142A Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate 失效
标题翻译：在基板上形成的量子线，其制造方法以及在基板上具有量子线的器件
公开(公告)号：US6130142A
公开(公告)日：2000-10-10
申请号：US376256
申请日：1999-08-18
申请人： Jonathan Westwater , Dharam Pal Gosain , Miyako Nakagoe , Setsuo Usui
发明人： Jonathan Westwater , Dharam Pal Gosain , Miyako Nakagoe , Setsuo Usui
IPC分类号： C30B11/00 , C30B11/12 , C30B25/00 , C30B25/04 , H01L21/20 , H01L33/06 , H01L21/00
CPC分类号： C30B25/005 , C30B11/12 , C30B25/04 , C30B29/06 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02653 , B82Y15/00 , H01L33/06 , Y10S438/962 , Y10S977/874 , Y10S977/875 , Y10S977/879
摘要： While a silicon substrate is heated, gold is evaporated thereon at a thickness of 0.6 nm, whereby melted alloy droplets are formed on the substrate surface. Then, the silicon substrate is heated to 450.degree.-650.degree. C. in a silane gas atmosphere of less than 0.5 Torr. As a result, a silane gas decomposition reaction occurs with the melted alloy droplets serving as catalysts, whereby silicon wires grow on the substrate surface. Subsequently, the metal alloy droplets at the tips of the silicon wires are removed and surface portions of the silicon wires are oxidized. Resulting surface oxide films are thereafter removed. As a result, silicon quantum wires that are thinner by the thickness of the surface oxide films are obtained.
摘要翻译：当加热硅衬底时，在其上蒸发金，其厚度为0.6nm，由此在衬底表面上形成熔融的合金液滴。然后，硅基板在小于0.5托的硅烷气体气氛中加热至450℃-650℃。结果，熔融的合金液滴作为催化剂发生硅烷气体分解反应，由此硅线在基板表面上生长。随后，除去硅线末端的金属合金液滴，使硅线的表面部分氧化。然后除去所得的表面氧化膜。结果，获得了通过表面氧化膜的厚度变薄的硅量子线。

46. 发明授权

US5889292A Semiconductor device having an improved thin film transistor 失效
标题翻译：具有改进的薄膜晶体管的半导体器件
公开(公告)号：US5889292A
公开(公告)日：1999-03-30
申请号：US571728
申请日：1995-12-13
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L29/78 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01L29/04 , H01L27/108 , H01L29/76 , H01L31/0328
CPC分类号： H01L29/78684 , H01L29/66742
摘要： The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
摘要翻译：本发明涉及具有由结晶化SiGe形成的沟道区的薄膜晶体管（TFT）结构，并提供具有大载流子迁移率的薄膜晶体管。在这种情况下，沟道区（4）由结晶的SiGe薄膜形成。

47. 发明授权

US5627085A Method for hydrogenating a polycrystal silicon layer of a thin film transistor 失效
标题翻译：用于氢化薄膜晶体管的多晶硅层的方法
公开(公告)号：US5627085A
公开(公告)日：1997-05-06
申请号：US499651
申请日：1995-06-07
申请人： Dharam P. Gosain , Jonathan Westwater , Setsuo Usui
发明人： Dharam P. Gosain , Jonathan Westwater , Setsuo Usui
IPC分类号： H01L21/265 , H01L21/30 , H01L21/336 , H01L29/78 , H01L29/786 , H01L21/02 , H01L21/20
CPC分类号： H01L29/66765 , H01L21/3003
摘要： The present invention improves a current--voltage characteristic by perfectly eliminating defects in the polycrystal silicon layer of TFT by hydrogenation. In the first process, hydrogen is doped into the polycrystal silicon layer 16 of TFT 1 by the hydrogen plasma doping method to eliminate a greater part of the defects in the polycrystal silicon layer 16. Thereafter, in the second process, after an amorphous silicon nitride film 23 including hydrogen is formed on the polycrystal silicon layer 16 or on the stopper layer 17 provided on the polycrystal silicon layer 16, hydrogen is released from the amorphous silicon nitride film 23 including hydrogen by the annealing process and such released hydrogen is then diffused into the polycrystal silicon layer 16 in order to eliminate remaining defects in the polycrystal silicon layer 16.
摘要翻译：本发明通过利用氢化完全消除TFT多晶硅层中的缺陷来提高电流 - 电压特性。在第一工艺中，通过氢等离子体掺杂法将氢掺杂到TFT 1的多晶硅层16中，以消除多晶硅层16中的大部分缺陷。此后，在第二工序中，在非晶氮化硅在多晶硅层16上或设置在多晶硅层16上的阻挡层17上形成包含氢的膜23，通过退火工艺从包含氢的非晶氮化硅膜23释放氢，然后将这种释放的氢扩散到多晶硅层16，以消除多晶硅层16中的剩余缺陷。

48. 发明授权

US5567633A Method for producing a thin film transistor having improved carrier mobility characteristics and leakage current characteristics 失效
标题翻译：具有改进的载流子迁移特性和漏电流特性的薄膜晶体管的制造方法
公开(公告)号：US5567633A
公开(公告)日：1996-10-22
申请号：US412946
申请日：1995-03-29
申请人： Dharam P. Gosain , Jonathan Westwater , Setsuo Usui
发明人： Dharam P. Gosain , Jonathan Westwater , Setsuo Usui
IPC分类号： H01L29/78 , H01L21/336 , H01L29/786 , H01L21/786
CPC分类号： H01L29/66765 , H01L29/78618 , H01L29/78621 , H01L29/78678
摘要： A polycrystalline silicon film formed of an active layer of a thin film transistor is entirely hydrogenated by a low-temperature process, thereby lowering the resistance and relaxing the electric field in the vicinity of the drain to reduce the leakage current. A gate and an insulating film that covers it are formed on a substrate having an insulating surface. A hydrogenated polycrystalline silicon film is formed over the substrate, including the gate, with the insulating film interposed therebetween. A silicon oxide film pattern is formed on the polycrystalline silicon film directly above the gate. Source/drain regions are formed on the polycrystalline silicon film substantially at two external sides of the silicon oxide film pattern. The source/drain regions are formed from a hydrogen-containing amorphous silicon film, a conductive silicon film and a metal film, which are successively stacked on the polycrystalline silicon film. Accordingly, the hydrogen-containing amorphous silicon film functions as an offset region.
摘要翻译：由薄膜晶体管的有源层形成的多晶硅膜通过低温工艺完全氢化，从而降低电阻并且缓和漏极附近的电场，从而减小漏电流。覆盖它的栅极和绝缘膜形成在具有绝缘表面的基板上。在包括栅极的基板上形成氢化多晶硅膜，绝缘膜插入其间。在栅极正上方的多晶硅膜上形成氧化硅膜图案。源极/漏极区域基本上在氧化硅膜图案的两个外侧形成在多晶硅膜上。源极/漏极区域由依次堆叠在多晶硅膜上的含氢非晶硅膜，导电硅膜和金属膜形成。因此，含氢非晶硅膜用作偏移区域。

49. 发明授权

US5446304A Insulated-gate-type field effect transistor which has subgates that have different spacing from the substrate than the main gate 失效
标题翻译：绝缘栅型场效应晶体管具有与主栅极不同的衬底间距的底栅
公开(公告)号：US5446304A
公开(公告)日：1995-08-29
申请号：US314929
申请日：1994-09-29
申请人： Toshiyuki Sameshima , Naoki Sano , Dharam P. Gosain , Setsuo Usui
发明人： Toshiyuki Sameshima , Naoki Sano , Dharam P. Gosain , Setsuo Usui
IPC分类号： H01L27/092 , H01L21/8238 , H01L29/78 , H01L29/786 , H01L29/76 , H01L27/01 , H01L29/04
CPC分类号： H01L27/092 , H01L29/78645 , H01L29/78648
摘要： An active layer of an insulated-gate type field effect transistor is formed by a thin film of an intrinsic polycrystalline semiconductor and a source electrode and a drain electrode are formed on the active layer. A source region and a drain region are not formed in the active layer. A main gate electrode is formed on a gate insulating film of a portion between the source electrode and the drain electrode. Subgate electrodes are formed on the gate insulating film in a portion between the source electrode and the main gate electrode and a portion between the drain electrode and the main gate electrode, respectively.
摘要翻译：绝缘栅型场效应晶体管的有源层由本征多晶半导体薄膜形成，源电极和漏电极形成在有源层上。源极区域和漏极区域不形成在有源层中。主栅极形成在源电极和漏电极之间的部分的栅极绝缘膜上。在门极绝缘膜上分别在源电极和主栅电极之间的部分以及漏电极和主栅电极之间的部分形成栅极电极。

50. 发明授权

US4549913A Wafer construction for making single-crystal semiconductor device 失效
标题翻译：晶圆制造单晶半导体器件
公开(公告)号：US4549913A
公开(公告)日：1985-10-29
申请号：US574535
申请日：1984-01-27
申请人： Yoshinori Hayafuji , Akashi Sawada , Setsuo Usui , Akikazu Shibata
发明人： Yoshinori Hayafuji , Akashi Sawada , Setsuo Usui , Akikazu Shibata
IPC分类号： C30B13/22 , C30B13/34 , H01L21/20 , H01L21/263 , H01L21/324 , H01L23/28
CPC分类号： C30B13/34 , C30B13/22 , H01L21/2022 , H01L21/2636 , H01L21/324 , Y10T428/12528
摘要： Seed crystals are made in a region of a polycrystalline layer on a substrate by melting the region and then cooling it so that it solidifies from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction. The desired cooling pattern is established by providing a thermal layer under the polycrystalline layer, which thermal layer is used to provide different rates of heat conduction therethrough in different parts of the thermal layer. A large, single-crystal device can be made by providing an operating layer of polycrystalline material in contact with the seed, melting the operating layer and recrystallizing it so that its solidification proceeds from the seed. The thermal layer can be used to ensure the desired direction of resolidification by providing different rates of heat conduction therethrough in different parts of the thermal layer.
摘要翻译：晶种通过熔化该区域而在基底上的多晶层的区域中制成，然后冷却，使得其在第一方向上从一端固定到另一端，并沿垂直于第一方向的第二方向朝向边缘。通过在多晶层下提供热层来建立所需的冷却模式，该热层用于在热层的不同部分中提供不同的热传导速率。可以通过提供与种子接触的多晶材料的操作层，熔化操作层并重结晶以使其固化从种子进行而制成大型单晶器件。热层可用于通过在热层的不同部分提供不同的热传导速率来确保所需的再凝固方向。

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