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41. 发明授权

US08304793B2 III-nitride semiconductor optical device and epitaxial substrate 有权
标题翻译： III族氮化物半导体光学器件和外延衬底
公开(公告)号：US08304793B2
公开(公告)日：2012-11-06
申请号：US12836117
申请日：2010-07-14
申请人： Yusuke Yoshizumi , Yohei Enya , Katsushi Akita , Masaki Ueno , Takashi Kyono , Takao Nakamura
发明人： Yusuke Yoshizumi , Yohei Enya , Katsushi Akita , Masaki Ueno , Takashi Kyono , Takao Nakamura
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/22 , H01S5/3054 , H01S5/3202
摘要： A III-nitride semiconductor optical device has a support base comprised of a III-nitride semiconductor, an n-type gallium nitride based semiconductor layer, a p-type gallium nitride based semiconductor layer, and an active layer. The support base has a primary surface at an angle with respect to a reference plane perpendicular to a reference axis extending in a c-axis direction of the III-nitride semiconductor. The n-type gallium nitride based semiconductor layer is provided over the primary surface of the support base. The p-type gallium nitride based semiconductor layer is doped with magnesium and is provided over the primary surface of the support base. The active layer is provided between the n-type gallium nitride based semiconductor layer and the p-type gallium nitride based semiconductor layer over the primary surface of the support base. The angle is in the range of not less than 40° and not more than 140°. The primary surface demonstrates either one of semipolar nature and nonpolar nature. The p-type gallium nitride based semiconductor layer contains carbon as a p-type dopant. A carbon concentration of the p-type gallium nitride based semiconductor layer is not less than 2×1016 cm−3, and the carbon concentration of the p-type gallium nitride based semiconductor layer is not more than 1×1019 cm−3.
摘要翻译： III族氮化物半导体光学器件具有由III族氮化物半导体，n型氮化镓系半导体层，p型氮化镓系半导体层和有源层构成的支撑基体。支撑基座具有相对于垂直于在III族氮化物半导体的c轴方向上延伸的参考轴线的参考平面成一定角度的主表面。 n型氮化镓基半导体层设置在支撑基体的主表面上。 p型氮化镓基半导体层掺杂有镁并且设置在载体基体的主表面上。有源层设置在支撑基体的主表面上的n型氮化镓基半导体层和p型氮化镓基半导体层之间。该角度在不小于40°且不大于140°的范围内。主要表面表现出半极性和非极性之一。 p型氮化镓系半导体层含有碳作为p型掺杂剂。 p型氮化镓系半导体层的碳浓度为2×1016cm-3以上，p型氮化镓系半导体层的碳浓度为1×1019cm-3以下。

42. 发明申请

US20120184057A1 III-NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III-NITRIDE SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译： III型氮化物半导体激光器件，以及制造III型氮化物半导体激光器件的方法
公开(公告)号：US20120184057A1
公开(公告)日：2012-07-19
申请号：US13366748
申请日：2012-02-06
申请人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Shinji TOKUYAMA , Takamichi SUMITOMO , Masaki UENO , Takatoshi IKEGAMI , Koji KATAYAMA , Takao NAKAMURA
发明人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Shinji TOKUYAMA , Takamichi SUMITOMO , Masaki UENO , Takatoshi IKEGAMI , Koji KATAYAMA , Takao NAKAMURA
IPC分类号： H01L21/301
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/0287 , H01S5/1085 , H01S5/16 , H01S5/2009 , H01S5/2201 , H01S5/3213 , H01S5/34333 , H01S2301/14
摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, where the semipolar primary surface includes a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, where the laser structure includes a substrate and a semiconductor region, and the semiconductor region is formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively.
摘要翻译：一种制造III族氮化物半导体激光器件的方法包括：制备具有半极性主表面的衬底，其中半极性主表面包括六边形III族氮化物半导体; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括基板和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在形成基板产品之后，形成第一和第二端面; 以及分别在第一和第二端面上形成用于氮化物半导体激光器件的光腔的第一和第二电介质多层膜。

43. 发明授权

US08183071B2 Method for producing nitride semiconductor optical device and epitaxial wafer 失效
标题翻译：氮化物半导体光学器件和外延晶片的制造方法
公开(公告)号：US08183071B2
公开(公告)日：2012-05-22
申请号：US12539887
申请日：2009-08-12
申请人： Katsushi Akita , Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Yusuke Yoshizumi , Masaki Ueno , Takao Nakamura
发明人： Katsushi Akita , Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Yusuke Yoshizumi , Masaki Ueno , Takao Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L33/0075 , H01L33/06 , H01L33/16 , H01S2304/04
摘要： In step S106, an InXGa1-XN well layer is grown on a semipolar main surface between times t4 and t5 while a temperature in a growth furnace is maintained at temperature TW. In step S107, immediately after completion of the growth of the well layer, the growth of a protective layer covering the main surface of the well layer is initiated at temperature TW. The protective layer is composed of a gallium nitride-based semiconductor with a band gap energy that is higher than that of the well layer and equal to or less than that of a barrier layer. In step S108, the temperature in the furnace is changed from temperatures TW to TB before the barrier layer growth. The barrier layer composed of the gallium nitride-based semiconductor is grown on the protective layer between times t8 and t9 while the temperature in the furnace is maintained at temperature TB.
摘要翻译：在步骤S106中，在时间t4〜t5的半极性主面上生长InXGa1-XN阱层，而生长炉内的温度保持在温度TW。在步骤S107中，在阱层生长完成之后，在温度TW下开始覆盖阱层主表面的保护层的生长。保护层由氮化镓系半导体构成，带隙能量高于阱层的带隙能量，并且等于或小于势垒层的带隙能量。在步骤S108中，在阻挡层生长之前，炉中的温度从温度TW变为TB。由氮化镓系半导体构成的阻挡层在时刻t8〜t9的保护层上生长，同时炉内的温度保持在温度TB。

44. 发明申请

US20120086015A1 GROUP III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译： III族氮化物半导体器件，外延衬底和制备III族氮化物半导体器件的方法
公开(公告)号：US20120086015A1
公开(公告)日：2012-04-12
申请号：US13243516
申请日：2011-09-23
申请人： Takashi KYONO , Yusuke YOSHIZUMI , Yohei ENYA , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO , Takao NAKAMURA
发明人： Takashi KYONO , Yusuke YOSHIZUMI , Yohei ENYA , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO , Takao NAKAMURA
IPC分类号： H01L29/20
CPC分类号： H01L21/02389 , B82Y20/00 , H01L21/02433 , H01L21/02458 , H01L21/02491 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/305 , H01S5/3086 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device includes a group III nitride semiconductor supporting base, a GaN based semiconductor region, an active layer, and a GaN semiconductor region. The primary surface of the group III nitride semiconductor supporting base is not any polar plane, and forms a finite angle with a reference plane that is orthogonal to a reference axis extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region, grown on the semipolar primary surface, includes a semiconductor layer of, for example, an n-type GaN based semiconductor doped with silicon. A GaN based semiconductor layer of an oxygen concentration of 5×1016 cm−3 or more provides an active layer, grown on the primary surface, with an excellent crystal quality.
摘要翻译：提供具有优异表面形态的具有氮化镓基半导体膜的III族氮化物半导体器件。 III族氮化物光半导体器件包括III族氮化物半导体支撑基底，GaN基半导体区域，有源层和GaN半导体区域。 III族氮化物半导体支撑基体的主表面不是任何极性平面，并且与与在III族氮化物半导体的c轴方向上延伸的参考轴正交的参考平面形成有限角度。在半极性主表面上生长的GaN基半导体区域包括例如掺杂有硅的n型GaN基半导体的半导体层。氧浓度为5×1016cm-3以上的GaN系半导体层能够提供在主表面生长的活性层，其结晶质量优异。

45. 发明申请

US20120080659A1 NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：基于氮化物的半导体光学器件，用于基于氮化物的半导体光学器件的外延晶体管，以及制造半导体发光器件的方法
公开(公告)号：US20120080659A1
公开(公告)日：2012-04-05
申请号：US13279005
申请日：2011-10-21
申请人： Masaki UENO , Yohei Enya , Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi , Takamichi Sumitomo , Takao Nakamura
发明人： Masaki UENO , Yohei Enya , Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi , Takamichi Sumitomo , Takao Nakamura
IPC分类号： H01L33/04
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L33/18 , H01L33/32 , H01S5/0014 , H01S5/0202 , H01S5/2009 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/3407 , H01S2301/173 , H01S2304/04
摘要： In the nitride based semiconductor optical device, the strained well layers extend along a reference plane tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. A gallium nitride based semiconductor layer is adjacent to a light-emitting layer with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer and the gallium nitride based semiconductor layer.
摘要翻译：在基于氮化物的半导体光学器件中，应变阱层沿着从与c轴方向延伸的参考轴正交的平面以倾斜角α倾斜的参考平面延伸。氮化镓基半导体层与具有负的压电场的发光层相邻，并且具有比阻挡层的带隙大的带隙。阱层中的压电场的方向指向从n型层到p型层的方向，并且氮化镓基半导体层中的压电场沿着从p型层的方向到n型层。因此，价带，而不是导带，在发光层和氮化镓基半导体层之间的界面处有下沉。

46. 发明申请

US20120008660A1 III-NITRIDE SEMICONDUCTOR LASER, AND METHOD FOR FABRICATING III-NITRIDE SEMICONDUCTOR LASER 有权
标题翻译： III-NITRIDE SEMICONDUCTOR LASER，和制备III-NITRIDE SEMICONDUCTOR LASER的方法
公开(公告)号：US20120008660A1
公开(公告)日：2012-01-12
申请号：US13211858
申请日：2011-08-17
申请人： Kei FUJII , Masaki UENO , Katsushi AKITA , Takashi KYONO , Yusuke YOSHIZUMI , Takamichi SUMITOMO , Yohei ENYA
发明人： Kei FUJII , Masaki UENO , Katsushi AKITA , Takashi KYONO , Yusuke YOSHIZUMI , Takamichi SUMITOMO , Yohei ENYA
IPC分类号： H01S5/343 , H01L33/04 , B82Y20/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S5/3211 , H01S5/3404 , H01S2304/04
摘要： Provided is a III-nitride semiconductor laser allowing for provision of a low threshold with use of a semipolar plane. A primary surface 13a of a semiconductor substrate 13 is inclined at an angle of inclination AOFF in the range of not less than 50 degrees and not more than 70 degrees toward the a-axis direction of GaN with respect to a reference plane perpendicular to a reference axis Cx along the c-axis direction of GaN. A first cladding layer 15, an active layer 17, and a second cladding layer 19 are provided on the primary surface 13a of the semiconductor substrate 13. The well layers 23a of the active layer 17 comprise InGaN. A polarization degree P in the LED mode of emission from the active layer of the semiconductor laser that reaches lasing is not less than −1 and not more than 0.1. The polarization degree P of the III-nitride semiconductor laser is defined by P=(I1−I2)/(I1+I2), using an electric field component I1 in the X1 direction and an electric field component I2 in the X2 direction of light in the LED mode.
摘要翻译：提供了允许使用半极性平面提供低阈值的III族氮化物半导体激光器。半导体基板13的主表面13a相对于垂直于参考的参考平面朝向a轴方向的不小于50度且不超过70度的范围内以倾斜角AOFF倾斜沿着C轴方向的C x轴。在半导体衬底13的主表面13a上设置第一覆层15，有源层17和第二覆层19.有源层17的阱层23a包括InGaN。来自激光器的半导体激光器的有源层的发光LED的偏振度P不小于-1且不大于0.1。 III族氮化物半导体激光器的偏振度P通过使用X1方向的电场分量I1和X2方向的电场分量I2由P =（I1-I2）/（I1 + I2）定义在LED模式下。

47. 发明授权

US08067257B2 Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device 有权
标题翻译：基于氮化物的半导体光学器件，用于氮化物半导体光学器件的外延晶片，以及制造半导体发光器件的方法
公开(公告)号：US08067257B2
公开(公告)日：2011-11-29
申请号：US12947431
申请日：2010-11-16
申请人： Masaki Ueno , Yohei Enya , Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi , Takamichi Sumitomo , Takao Nakamura
发明人： Masaki Ueno , Yohei Enya , Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi , Takamichi Sumitomo , Takao Nakamura
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L33/18 , H01L33/32 , H01S5/0014 , H01S5/0202 , H01S5/2009 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/3407 , H01S2301/173 , H01S2304/04
摘要： In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle α is in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees. A gallium nitride based semiconductor layer P is adjacent to a light-emitting layer SP− with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer W3 is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer P is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer SP− and the gallium nitride based semiconductor layer P.
摘要翻译：在基于氮化物的半导体光学器件LE1中，应变阱层21沿着从与c轴方向延伸的参考轴正交的平面以倾斜角α倾斜的参考平面SR1延伸。倾斜角α在大于59度至小于80度或大于150度至小于180度的范围内。氮化镓基半导体层P与具有负的压电场的发光层SP相邻，并且具有比阻挡层的带隙大的带隙。阱层W3中的压电场的方向指向从n型层到p型层的方向，并且氮化镓基半导体层P中的压电场指向从p型层的方向，类型层到n型层。因此，价带，而不是导带，在发光层SP-和氮化镓基半导体层P之间的界面处有下沉。

48. 发明申请

US20110241016A1 NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权
标题翻译：基于氮化物的半导体发光元件
公开(公告)号：US20110241016A1
公开(公告)日：2011-10-06
申请号：US13054037
申请日：2010-06-18
申请人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
发明人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
IPC分类号： H01L33/16 , H01L33/30
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/22 , H01S5/3202 , H01S5/3213 , H01S5/3404
摘要： A nitride-based semiconductor light-emitting element LE1 or LD1 has: a gallium nitride substrate 11 having a principal surface 11a which makes an angle α, in the range 40° to 50° or in the range more than 90° to 130°, with the reference plane Sc perpendicular to the reference axis Cx extending in the c axis direction; an n-type gallium nitride-based semiconductor layer 13; a second gallium nitride-based semiconductor layer 17; and a light-emitting layer 15 including a plurality of well layers of InGaN and a plurality of barrier layers 23 of a GaN-based semiconductor, wherein the direction of piezoelectric polarization of the plurality of well layers 21 is the direction from the n-type gallium nitride-based semiconductor layer 13 toward the second gallium nitride-based semiconductor layer 17.
摘要翻译：氮化物系半导体发光元件LE1或LD1具有：氮化镓衬底11，其具有在40°至50°的范围内或大于90°至130°的范围内具有角度α的主表面11a，其中参考平面Sc垂直于在c轴方向上延伸的参考轴线Cx; n型氮化镓系半导体层13; 第二氮化镓基半导体层17; 以及包括多个InGaN阱层和GaN基半导体的多个势垒层23的发光层15，其中多个阱层21的压电极化的方向是来自n型的方向氮化镓系半导体层13朝向第二氮化镓系半导体层17。

49. 发明申请

US20110228804A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译： III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法
公开(公告)号：US20110228804A1
公开(公告)日：2011-09-22
申请号：US12836170
申请日：2010-07-14
申请人： Yusuke YOSHIZUMI , Shimpei TAKAGI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
发明人： Yusuke YOSHIZUMI , Shimpei TAKAGI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
IPC分类号： H01S5/30 , H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/0287 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：本发明提供一种III族氮化物半导体激光器件，其具有激光腔的高激光产生量，其中六边形III族氮化物的c轴向m轴方向倾斜的支撑基底的半极性表面。第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。因此，通过能够实现低阈值电流的带状转变来利用发射是可行的。在激光结构13中，第一表面13a与第二表面13b相对。第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

50. 发明申请

US20110114916A1 III-NITRIDE SEMICONDUCTOR OPTICAL DEVICE AND EPITAXIAL SUBSTRATE 有权
公开(公告)号：US20110114916A1
公开(公告)日：2011-05-19
申请号：US12836117
申请日：2010-07-14
申请人： Yusuke YOSHIZUMI , Yohei ENYA , Katsushi AKITA , Masaki UENO , Takashi KYONO , Takao NAKAMURA
发明人： Yusuke YOSHIZUMI , Yohei ENYA , Katsushi AKITA , Masaki UENO , Takashi KYONO , Takao NAKAMURA
IPC分类号： H01L31/0352
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/22 , H01S5/3054 , H01S5/3202
摘要： A III-nitride semiconductor optical device has a support base comprised of a III-nitride semiconductor, an n-type gallium nitride based semiconductor layer, a p-type gallium nitride based semiconductor layer, and an active layer. The support base has a primary surface at an angle with respect to a reference plane perpendicular to a reference axis extending in a c-axis direction of the III-nitride semiconductor. The n-type gallium nitride based semiconductor layer is provided over the primary surface of the support base. The p-type gallium nitride based semiconductor layer is doped with magnesium and is provided over the primary surface of the support base. The active layer is provided between the n-type gallium nitride based semiconductor layer and the p-type gallium nitride based semiconductor layer over the primary surface of the support base. The angle is in the range of not less than 40° and not more than 140°. The primary surface demonstrates either one of semipolar nature and nonpolar nature. The p-type gallium nitride based semiconductor layer contains carbon as a p-type dopant. A carbon concentration of the p-type gallium nitride based semiconductor layer is not less than 2×1016 cm−3, and the carbon concentration of the p-type gallium nitride based semiconductor layer is not more than 1×1019 cm−3.
摘要翻译： III族氮化物半导体光学器件具有由III族氮化物半导体，n型氮化镓系半导体层，p型氮化镓系半导体层和有源层构成的支撑基体。支撑基座具有相对于垂直于在III族氮化物半导体的c轴方向上延伸的参考轴线的参考平面成一定角度的主表面。 n型氮化镓基半导体层设置在支撑基体的主表面上。 p型氮化镓基半导体层掺杂有镁并且设置在载体基体的主表面上。有源层设置在支撑基体的主表面上的n型氮化镓基半导体层和p型氮化镓基半导体层之间。该角度在不小于40°且不大于140°的范围内。主表面显示出半极性和非极性之一。 p型氮化镓系半导体层含有碳作为p型掺杂剂。 p型氮化镓系半导体层的碳浓度为2×1016cm-3以上，p型氮化镓系半导体层的碳浓度为1×1019cm-3以下。

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