会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • GROUP-III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE
    • III族氮化物半导体器件,外延衬底以及制备III族氮化物半导体器件的方法
    • US20110180805A1
    • 2011-07-28
    • US12836144
    • 2010-07-14
    • Yohei ENYAYusuke YOSHIZUMITakashi KYONOTakamichi SUMITOMOKatsushi AKITAMasaki UENOTakao NAKAMURA
    • Yohei ENYAYusuke YOSHIZUMITakashi KYONOTakamichi SUMITOMOKatsushi AKITAMasaki UENOTakao NAKAMURA
    • H01L33/32
    • H01L21/02458B82Y20/00H01L21/02389H01L21/02433H01L21/0254H01S5/3202H01S5/34333H01S2302/00
    • A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle ALPHA with respect to the c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes a plurality of GaN-based semiconductor layers. The reference axis is inclined at a first angle ALPHA1 in the range of not less than 10 degrees, and less than 80 degrees from the c-axis of the III-nitride semiconductor toward a first crystal axis, either one of the m-axis and a-axis. The reference axis is inclined at a second angle ALPHA2 in the range of not less than −0.30 degrees and not more than +0.30 degrees from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. The predetermined angle, the first angle, and the second angle have a relation of ALPHA=(ALPHA12+ALPHA22)1/2. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.
    • III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底,具有主要表面沿垂直于相对于III型氮化物半导体的c轴倾斜预定角度ALPHA的参考轴线的第一参考平面延伸, 氮化物半导体,以及设置在支撑基体的主表面上的外延半导体区域。 外延半导体区域包括多个GaN基半导体层。 基准轴在距离III族氮化物半导体的c轴朝向第一晶轴不小于10度且小于80度的范围内以第一角度ALPHA1倾斜,m轴和 a轴。 参考轴在距离III族氮化物半导体的c轴朝向第二晶轴不小于-0.30度且不大于+0.30度的范围内以第二角度ALPHA2倾斜,另一个m- 轴和a轴。 预定角度,第一角度和第二角度具有ALPHA =(ALPHA12 + ALPHA22)1/2的关系。 外延半导体区域的最外表面的形态包括多个凹坑。 坑的坑密度不大于5×104cm-2。
    • 5. 发明申请
    • GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE
    • III族氮化物半导体激光器件,以及制备III族氮化物半导体激光器件的方法
    • US20110058585A1
    • 2011-03-10
    • US12846361
    • 2010-07-29
    • Yusuke YOSHIZUMIYohei ENYATakashi KYONOMasahiro ADACHIKatsushi AKITAMasaki UENOTakamichi SUMITOMOShinji TOKUYAMAKoji KATAYAMATakao NAKAMURATakatoshi IKEGAMI
    • Yusuke YOSHIZUMIYohei ENYATakashi KYONOMasahiro ADACHIKatsushi AKITAMasaki UENOTakamichi SUMITOMOShinji TOKUYAMAKoji KATAYAMATakao NAKAMURATakatoshi IKEGAMI
    • H01S5/323H01L33/30
    • H01S5/34333B82Y20/00H01L21/02389H01L21/02433H01S5/0014H01S5/0021H01S5/0202H01S5/2009H01S5/3202H01S5/3211
    • A group-III nitride semiconductor laser device comprises a laser structure including a support base and a semiconductor region, and an electrode provided on the semiconductor region of the laser structure. The support base comprises a hexagonal group-III nitride semiconductor and has a semipolar primary surface, and the semiconductor region is provided on the semipolar primary surface of the support base. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer. The first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis to the semipolar primary surface. The active layer comprises a gallium nitride-based semiconductor layer. The c-axis of the hexagonal group-III nitride semiconductor of the support base tilts at a finite angle ALPHA with respect to a normal axis toward an a-axis of the hexagonal group-III nitride semiconductor. The laser structure includes first and second fractured faces intersecting with an a-n plane defined by the normal axis and the a-axis of the hexagonal group-III nitride semiconductor. The laser cavity of the group-III nitride semiconductor laser device includes the first and second fractured faces. The laser structure includes first and second surfaces and the first surface is opposite to the second surface, and each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface.
    • III族氮化物半导体激光器件包括具有支撑基极和半导体区域的激光器结构以及设置在激光器结构的半导体区域上的电极。 支撑基底包括六方晶III族氮化物半导体,并且具有半极性主表面,并且半导体区域设置在支撑基底的半极性主表面上。 半导体区域包括第一导电型氮化镓基半导体的第一包层,第二导电型氮化镓基半导体的第二包覆层和有源层。 第一包层,第二包覆层和有源层沿着正交轴线配置到半极性主表面。 有源层包括氮化镓基半导体层。 支撑基座的六角形III族氮化物半导体的c轴相对于六边形III族氮化物半导体的a轴的法线轴线以有限角度ALPHA倾斜。 激光结构包括与由六角形III族氮化物半导体的法线轴和a轴限定的a-n平面相交的第一和第二断裂面。 III族氮化物半导体激光器件的激光腔包括第一和第二断裂面。 激光结构包括第一表面和第二表面,并且第一表面与第二表面相对,并且第一和第二断裂面中的每一个从第一表面的边缘延伸到第二表面的边缘。