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1. 发明申请

US20120202304A1 III-NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III- NITRIDE SEMICONDUCTOR LASER DEVICE 失效
标题翻译： III型氮化物半导体激光器件，以及制造III型氮化物半导体激光器件的方法
公开(公告)号：US20120202304A1
公开(公告)日：2012-08-09
申请号：US13416844
申请日：2012-03-09
申请人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Shinji TOKUYAMA , Takamichi SUMITOMO , Masaki UENO , Takatoshi IKEGAMI , Koji KATAYAMA , Takao NAKAMURA
发明人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Shinji TOKUYAMA , Takamichi SUMITOMO , Masaki UENO , Takatoshi IKEGAMI , Koji KATAYAMA , Takao NAKAMURA
IPC分类号： H01L33/02
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/34333
摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, the semipolar primary surface including a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, the laser structure including a substrate and a semiconductor region, and the semiconductor region being formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively.
摘要翻译：一种制造III族氮化物半导体激光器件的方法包括：制备具有半极性主表面的衬底，所述半极性主表面包括六边形III族氮化物半导体; 形成具有激光结构的衬底产品，阳极电极和阴极电极，所述激光器结构包括衬底和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在形成基板产品之后，形成第一和第二端面; 以及分别在第一和第二端面上形成用于氮化物半导体激光器件的光腔的第一和第二电介质多层膜。

2. 发明申请

US20130295704A9 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 失效
标题翻译： III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法
公开(公告)号：US20130295704A9
公开(公告)日：2013-11-07
申请号：US13335560
申请日：2011-12-22
申请人： Yusuke YOSHIZUMI , Shimpei TAKAGI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
发明人： Yusuke YOSHIZUMI , Shimpei TAKAGI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
IPC分类号： H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/0287 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：本发明提供一种III族氮化物半导体激光器件，其具有激光腔的高激光产生量，其中六边形III族氮化物的c轴向m轴方向倾斜的支撑基底的半极性表面。第一和第二断裂面形成激光腔与m-n平面相交。 III族氮化物半导体激光器件具有在m-n平面和半极性表面之间的交线的方向上延伸的激光波导。在激光结构中，第一表面与第二表面相对。第一和第二断裂面从第一表面的边缘延伸到第二表面的边缘。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

3. 发明申请

US20110058585A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 有权
标题翻译： III族氮化物半导体激光器件，以及制备III族氮化物半导体激光器件的方法
公开(公告)号：US20110058585A1
公开(公告)日：2011-03-10
申请号：US12846361
申请日：2010-07-29
申请人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
发明人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
IPC分类号： H01S5/323 , H01L33/30
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01S5/0014 , H01S5/0021 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S5/3211
摘要： A group-III nitride semiconductor laser device comprises a laser structure including a support base and a semiconductor region, and an electrode provided on the semiconductor region of the laser structure. The support base comprises a hexagonal group-III nitride semiconductor and has a semipolar primary surface, and the semiconductor region is provided on the semipolar primary surface of the support base. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer. The first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis to the semipolar primary surface. The active layer comprises a gallium nitride-based semiconductor layer. The c-axis of the hexagonal group-III nitride semiconductor of the support base tilts at a finite angle ALPHA with respect to a normal axis toward an a-axis of the hexagonal group-III nitride semiconductor. The laser structure includes first and second fractured faces intersecting with an a-n plane defined by the normal axis and the a-axis of the hexagonal group-III nitride semiconductor. The laser cavity of the group-III nitride semiconductor laser device includes the first and second fractured faces. The laser structure includes first and second surfaces and the first surface is opposite to the second surface, and each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface.
摘要翻译： III族氮化物半导体激光器件包括具有支撑基极和半导体区域的激光器结构以及设置在激光器结构的半导体区域上的电极。支撑基底包括六方晶III族氮化物半导体，并且具有半极性主表面，并且半导体区域设置在支撑基底的半极性主表面上。半导体区域包括第一导电型氮化镓基半导体的第一包层，第二导电型氮化镓基半导体的第二包覆层和有源层。第一包层，第二包覆层和有源层沿着正交轴线配置到半极性主表面。有源层包括氮化镓基半导体层。支撑基座的六角形III族氮化物半导体的c轴相对于六边形III族氮化物半导体的a轴的法线轴线以有限角度ALPHA倾斜。激光结构包括与由六角形III族氮化物半导体的法线轴和a轴限定的a-n平面相交的第一和第二断裂面。 III族氮化物半导体激光器件的激光腔包括第一和第二断裂面。激光结构包括第一表面和第二表面，并且第一表面与第二表面相对，并且第一和第二断裂面中的每一个从第一表面的边缘延伸到第二表面的边缘。

4. 发明申请

US20120142130A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 失效
标题翻译： III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法
公开(公告)号：US20120142130A1
公开(公告)日：2012-06-07
申请号：US13335560
申请日：2011-12-22
申请人： Yusuke YOSHIZUMI , Shimpei TAKAGI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
发明人： Yusuke YOSHIZUMI , Shimpei TAKAGI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
IPC分类号： H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/0287 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：本发明提供一种III族氮化物半导体激光器件，其具有激光腔的高激光产生量，其中六边形III族氮化物的c轴向m轴倾斜的支撑基底的半极性表面。第一和第二断裂面形成激光腔与m-n平面相交。 III族氮化物半导体激光器件具有在m-n平面和半极性表面之间的交线的方向上延伸的激光波导。在激光结构中，第一表面与第二表面相对。第一和第二断裂面从第一表面的边缘延伸到第二表面的边缘。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

5. 发明申请

US20120088326A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 有权
标题翻译： III族氮化物半导体激光器件，以及制备III族氮化物半导体激光器件的方法
公开(公告)号：US20120088326A1
公开(公告)日：2012-04-12
申请号：US13277806
申请日：2011-10-20
申请人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
发明人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
IPC分类号： H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01S5/0014 , H01S5/0021 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S5/3211
摘要： A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.
摘要翻译：制备III族氮化物半导体激光器件的方法包括：制备六方晶III族氮化物半导体的衬底，其中衬底具有半极性主表面; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括所述基板和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在六方晶III族氮化物半导体的a轴的方向上划分基板产品的第一表面; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

6. 发明申请

US20120184057A1 III-NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III-NITRIDE SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译： III型氮化物半导体激光器件，以及制造III型氮化物半导体激光器件的方法
公开(公告)号：US20120184057A1
公开(公告)日：2012-07-19
申请号：US13366748
申请日：2012-02-06
申请人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Shinji TOKUYAMA , Takamichi SUMITOMO , Masaki UENO , Takatoshi IKEGAMI , Koji KATAYAMA , Takao NAKAMURA
发明人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Shinji TOKUYAMA , Takamichi SUMITOMO , Masaki UENO , Takatoshi IKEGAMI , Koji KATAYAMA , Takao NAKAMURA
IPC分类号： H01L21/301
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/0287 , H01S5/1085 , H01S5/16 , H01S5/2009 , H01S5/2201 , H01S5/3213 , H01S5/34333 , H01S2301/14
摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, where the semipolar primary surface includes a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, where the laser structure includes a substrate and a semiconductor region, and the semiconductor region is formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively.
摘要翻译：一种制造III族氮化物半导体激光器件的方法包括：制备具有半极性主表面的衬底，其中半极性主表面包括六边形III族氮化物半导体; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括基板和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在形成基板产品之后，形成第一和第二端面; 以及分别在第一和第二端面上形成用于氮化物半导体激光器件的光腔的第一和第二电介质多层膜。

7. 发明申请

US20110228804A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译： III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法
公开(公告)号：US20110228804A1
公开(公告)日：2011-09-22
申请号：US12836170
申请日：2010-07-14
申请人： Yusuke YOSHIZUMI , Shimpei TAKAGI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
发明人： Yusuke YOSHIZUMI , Shimpei TAKAGI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
IPC分类号： H01S5/30 , H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/0287 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：本发明提供一种III族氮化物半导体激光器件，其具有激光腔的高激光产生量，其中六边形III族氮化物的c轴向m轴方向倾斜的支撑基底的半极性表面。第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。因此，通过能够实现低阈值电流的带状转变来利用发射是可行的。在激光结构13中，第一表面13a与第二表面13b相对。第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

8. 发明申请

US20100322276A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 有权
标题翻译： III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法
公开(公告)号：US20100322276A1
公开(公告)日：2010-12-23
申请号：US12844446
申请日：2010-07-27
申请人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
发明人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
IPC分类号： H01S5/30 , H01L33/00 , H01L21/02 , H01S5/323 , H01S5/34 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。因此，通过能够实现低阈值电流的带状转变来利用发射是可行的。在激光结构13中，第一表面13a与第二表面13b相对。第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

9. 发明申请

US20110164637A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 有权
标题翻译： III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法
公开(公告)号：US20110164637A1
公开(公告)日：2011-07-07
申请号：US13050330
申请日：2011-03-17
申请人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
发明人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
IPC分类号： H01S5/323
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。因此，通过能够实现低阈值电流的带状转变来利用发射是可行的。在激光结构13中，第一表面13a与第二表面13b相对。第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

10. 发明申请

US20110075695A1 III-INTRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III-NITRIDE SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译： III-INTRIDE SEMICONDUCTOR LASER DEVICE，以及制造III-NITRIDE SEMICONDUCTOR LASER DEVICE的方法
公开(公告)号：US20110075695A1
公开(公告)日：2011-03-31
申请号：US12831557
申请日：2010-07-07
申请人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Shinji TOKUYAMA , Takamichi SUMITOMO , Masaki UENO , Takatoshi IKEGAMI , Koji KATAYAMA , Takao NAKAMURA
发明人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Shinji TOKUYAMA , Takamichi SUMITOMO , Masaki UENO , Takatoshi IKEGAMI , Koji KATAYAMA , Takao NAKAMURA
IPC分类号： H01S5/323 , H01L33/00 , H01S5/30
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/0287 , H01S5/1085 , H01S5/16 , H01S5/2009 , H01S5/2201 , H01S5/3213 , H01S5/34333 , H01S2301/14
摘要： In a III-nitride semiconductor laser device, a laser structure includes a support base with a semipolar primary surface comprised of a III-nitride semiconductor, and a semiconductor region provided on the semipolar primary surface of the support base. First and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device are provided on first and second end faces of the semiconductor region, respectively. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. The first cladding layer, the second cladding layer, and the active layer are arranged in an axis normal to the semipolar primary surface. A c+ axis vector indicating a direction of the axis of the III-nitride semiconductor of the support base is inclined at an angle in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees toward a direction of any one crystal axis of the m- and a-axes of the III-nitride semiconductor with respect to a normal vector indicating a direction of the normal axis. The first and second end faces intersect with a reference plane defined by the normal axis and the one crystal axis of the hexagonal III-nitride semiconductor. The c+ axis vector makes an acute angle with a waveguide vector indicating a direction from the second end face to the first end face. A thickness of the first dielectric multilayer film is smaller than a thickness of the second dielectric multilayer film.
摘要翻译：在III族氮化物半导体激光器件中，激光器结构包括具有由III族氮化物半导体构成的半极性主表面的支撑基底和设置在支撑基底的半极性主表面上的半导体区域。分别在半导体区域的第一和第二端面上设置用于氮化物半导体激光器件的光腔的第一和第二电介质多层膜。半导体区域包括第一导电型氮化镓基半导体的第一包层，第二导电型氮化镓基半导体的第二包层和设置在第一包层和第二包层之间的有源层。第一覆层，第二覆层，有源层配置在与半极性主面垂直的轴上。指示支撑基座的III族氮化物半导体的<0001轴的方向的c +轴矢量以不小于45度且不大于80度的范围内的角度倾斜，或者在不小于相对于表示法线轴方向的法线矢量，朝向III族氮化物半导体的m轴和a轴的任意一个晶轴的方向为100度以上且135度以下。第一和第二端面与由正常轴和六边形III族氮化物半导体的一个晶体轴限定的参考平面相交。 c +轴矢量与表示从第二端面到第一端面的方向的波导矢量成锐角。第一电介质多层膜的厚度小于第二电介质多层膜的厚度。

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