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    • 45. 发明申请
    • Image display device
    • 图像显示装置
    • US20060065895A1
    • 2006-03-30
    • US11237785
    • 2005-09-29
    • Toshiaki KusunokiMasakazu SagawaKazutaka Tsuji
    • Toshiaki KusunokiMasakazu SagawaKazutaka Tsuji
    • H01L29/76
    • H01J29/481H01J9/027
    • An interlayer insulator with a low taper angle is formed as a laminated film in which a silicon nitride film is formed on a silicon oxide film formed on the glass substrate side (field insulator side). Thus, an upper electrode of a cathode formed on the interlayer insulator is prevented from being broken, while a crossing portion between the upper electrode and a base electrode of the cathode is made low in capacitance. At the same time, sodium separated from glass of the substrate is blocked. Disconnection of the upper electrode is prevented due to the low taper angle of the interlayer insulator. Low capacitance is attained by increasing the film thickness of the interlayer insulator. The cathode is prevented from being contaminated with sodium separated from glass of the substrate.
    • 形成具有低锥角的层间绝缘体作为形成在玻璃基板侧(场绝缘体侧)上的氧化硅膜上形成氮化硅膜的层叠膜。 因此,防止形成在层间绝缘体上的阴极的上电极破坏,同时阴极的上电极和基极之间的交叉部分的电容变小。 同时,与基板玻璃分离的钠被阻断。 由于层间绝缘体的锥角较小,防止了上电极的断开。 通过增加层间绝缘体的膜厚可实现低电容。 防止阴极被与基板玻璃分离的钠污染。