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41. 发明授权

US08586281B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08586281B2
公开(公告)日：2013-11-19
申请号：US13156159
申请日：2011-06-08
申请人： Jun Iwashita , Masahito Yahagi , Kenri Konno , Isamu Takagi
发明人： Jun Iwashita , Masahito Yahagi , Kenri Konno , Isamu Takagi
IPC分类号： G03F7/028 , G03F7/039 , G03F7/26
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046
摘要： A positive resist composition including: a base component; and a sensitizer which a polymeric compound having a core portion that includes a hydrocarbon group or a heterocycle of two or more valences and at least one arm portion bonded to the core portion and represented by formula (1), and a polymeric compound having a core portion including a polymer having a molecular weight of 500 to 20,000 and at least one arm portion bonded to the core portion and represented by formula (1); and either the base component includes a resin component that generates acid upon exposure and exhibits increased solubility in an alkali developing solution under action of acid, or the positive resist composition further contains an acid generator component including a compound that generates acid upon exposure: —(X)—Y (1) in which X represents a divalent linking group having an acid dissociable group; and Y represents a polymer chain.
摘要翻译：一种正型抗蚀剂组合物，包括：基础组分; 和具有核心部分的高分子化合物，其具有包含烃基或两价以上化合价的杂环，以及至少一个与核心部分结合并由式（1）表示的臂部分的聚合化合物和具有核心的聚合物包括分子量为500至20,000的聚合物和至少一个结合到核心部分并由式（1）表示的臂部分; 并且基础组分包括在暴露时产生酸的树脂组分，并且在酸的作用下在碱性显影液中显示增加的溶解性，或者正型抗蚀剂组合物还含有包含在暴露时产生酸的化合物的酸产生剂组分： - （ X）-Y（1）其中X表示具有酸解离基团的二价连接基团; Y表示聚合物链。

42. 发明申请

US20120251951A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：耐蚀组合物和形成耐力图案的方法
公开(公告)号：US20120251951A1
公开(公告)日：2012-10-04
申请号：US13424183
申请日：2012-03-19
申请人： Jun Iwashita , Kensuke Matsuzawa
发明人： Jun Iwashita , Kensuke Matsuzawa
IPC分类号： G03F7/027 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A resist composition including: a base component (A) that exhibits changed solubility in a developing solution by action of acid; and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) includes a resin component (A1) containing a structural unit (a0) represented by general formula (a0-1) shown below or general formula (a0-2) shown below; and the acid generator component (B) includes an acid generator (B1) including a compound represented by general formula (b0-1) or (b0-2) shown below:
摘要翻译：一种抗蚀剂组合物，其包含：通过酸作用显现出在显影液中溶解度变差的碱成分（A）和含有下述通式（a0-1）表示的结构单元（a0）的树脂成分（A1）的通式（A）的通式（A）的通式（A）表示的酸性发生剂成分（B） a0-2）酸产生剂组分（B）包括含有下列通式（b0-1）或（b0-2）表示的化合物的酸产生剂（B1）：

43. 发明申请

US20120208128A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND 有权
标题翻译：耐蚀组合物，形成耐蚀图案和聚合物的方法
公开(公告)号：US20120208128A1
公开(公告)日：2012-08-16
申请号：US13371151
申请日：2012-02-10
申请人： Daichi Takaki , Daiju Shiono , Masatoshi Arai , Jun Iwashita , Kenri Konno
发明人： Daichi Takaki , Daiju Shiono , Masatoshi Arai , Jun Iwashita , Kenri Konno
IPC分类号： G03F7/20 , C08F214/18 , C08F228/06 , G03F7/004
CPC分类号： C08F228/06 , C08F220/22 , C08F220/38 , C08F228/02 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the base component (A) including a resin component (A1) containing a structural unit (a0-1) having a group represented by general formula (a0-1) shown below and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the α-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid.
摘要翻译：一种抗蚀剂组合物，其包含在暴露后产生酸的基体组分（A），并且在酸的作用下在显影液中显示出改变的溶解性，所述基础组分（A）包含含有结构单元（a0-1）的树脂组分（A1）具有由下述通式（a0-1）表示的基团和由可以具有与被取代基取代的具有氢原子键合的含有氢原子并含有酸的丙烯酸酯的结构单元（a1）通过酸的作用显示出极性增加的可分解基团。

44. 发明授权

US08232040B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08232040B2
公开(公告)日：2012-07-31
申请号：US12620339
申请日：2009-11-17
申请人： Jun Iwashita , Takeyoshi Mimura
发明人： Jun Iwashita , Takeyoshi Mimura
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition including a base material component (A) that exhibits increased solubility in an alkali developing solution under action of an acid; and an acid generator component (B) that generates an acid upon exposure, wherein the base material component (A) includes a polymeric compound (A1) having a structural unit (a10) derived from hydroxystyrene and a structural unit (a11) represented by general formula (a11-1) shown below: wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms, or a halogenated alkyl group of 1 to 5 carbon atoms; R21 represents an alkyl group; and R22 represents a group that forms an aliphatic monocyclic group of 7 to 10-membered ring together with the carbon atom to which this R22 group is bonded.
摘要翻译：一种正型抗蚀剂组合物，其包含在酸性作用下在碱性显影液中表现出增加的溶解度的基材成分（A）以及在曝光时产生酸的酸发生剂组分（B），其中所述基材组分（A）包含具有由羟基苯乙烯衍生的结构单元（a10）的聚合化合物（A1）和由一般表示的结构单元（a11）式（a11-1）表示：式中，R表示氢原子，碳原子数1〜5的烷基或碳原子数1〜5的卤代烷基， R21表示烷基; R 22表示与该R 22基团键合的碳原子一起形成7〜10元环的脂肪族单环基的基团。

45. 发明申请

US20100248144A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN 审中-公开
标题翻译：积极抵抗组合物，形成阻力模式的方法
公开(公告)号：US20100248144A1
公开(公告)日：2010-09-30
申请号：US12730070
申请日：2010-03-23
申请人： Takeshi IWAI , Jun IWASHITA , Daichi TAKAKI
发明人： Takeshi IWAI , Jun IWASHITA , Daichi TAKAKI
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/40 , C09D133/02 , G03F7/0397
摘要： The positive resist composition including a base material component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid generator component (B) which generates acid upon exposure, the positive resist composition characterized in that in those cases where a resist film is formed on a substrate using the positive resist composition and is then subjected to a selective exposure and developing to form a hole pattern, followed by a bake treatment, a bake treatment temperature (Tf), at which the size of the hole is reduced by 10%, as compared to the size of the hole before the bake treatment, is at least 100° C.; and also that in those cases where a resist film is formed on a substrate using the positive resist composition and is then subjected to a selective exposure and developing to form a hole pattern, followed by the entire surface exposure and then by a bake treatment, a bake treatment temperature (Tf′), at which the size of the hole is reduced by 10%, as compared to the size of the hole before the bake treatment, is at least 18° C. lower than the Tf.
摘要翻译：正型抗蚀剂组合物包括在酸的作用下在碱性显影液中显示出增加的溶解性的基体组分（A）和暴露时产生酸的酸产生剂组分（B），正性抗蚀剂组合物的特征在于，使用正性抗蚀剂组合物在基板上形成抗蚀剂膜，然后进行选择性曝光和显影以形成孔图案，然后进行烘烤处理，烘烤处理温度（Tf），其中孔的尺寸与烘烤处理前的孔的尺寸相比减少10％至少100℃。并且在使用正型抗蚀剂组合物的基板上形成抗蚀剂膜的情况下，然后进行选择性曝光和显影以形成孔图案，然后进行整个表面曝光，然后通过烘烤处理，与烘烤处理前的孔的尺寸相比，孔的尺寸减小10％的烘烤处理温度（Tf'）比Tf低至少18℃。

46. 发明申请

US20100159389A1 RESIN, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：树脂，耐蚀组合物和形成耐力图案的方法
公开(公告)号：US20100159389A1
公开(公告)日：2010-06-24
申请号：US12160742
申请日：2006-12-26
申请人： Masaru Takeshita , Jun Iwashita , Takeshi Iwai , Yuji Ohgomori
发明人： Masaru Takeshita , Jun Iwashita , Takeshi Iwai , Yuji Ohgomori
IPC分类号： G03F7/004 , G03F7/20 , C08F224/00
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/0382 , Y10S430/111
摘要： A resist composition including a base resin component (A) and an acid-generator component (B) which generates acid upon exposure, the component (A) including a resin (A1) which has a structural unit (a0) represented by general formula (a-0) shown below: wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; a represents an integer of 0 to 2; b represents an integer of 1 to 3; c represents an integer of 1 to 2; and a+b is an integer of 2 or more.
摘要翻译：包含曝光时产生酸的基础树脂组分（A）和酸产生剂组分（B）的抗蚀剂组合物包括具有由通式（a）表示的结构单元（a0）的树脂（A1）的组分（A） a-0）：其中R表示氢原子，卤素原子，低级烷基或卤代低级烷基; a表示0〜2的整数， b表示1〜3的整数， c表示1〜2的整数， a + b为2以上的整数。

47. 发明申请

US20100081080A1 POLYMER COMPOUND, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：聚合物化合物，耐蚀组合物和形成耐力图案的方法
公开(公告)号：US20100081080A1
公开(公告)日：2010-04-01
申请号：US12449547
申请日：2008-02-06
申请人： Jun Iwashita , Sho Abe , Makiko Irie , Takeshi Iwai
发明人： Jun Iwashita , Sho Abe , Makiko Irie , Takeshi Iwai
IPC分类号： G03F7/20 , C08F32/08 , C08F24/00 , G03F7/004
CPC分类号： C08F220/28 , C08F220/34 , C08F220/38 , G03F7/0382 , G03F7/0397 , Y10S430/111
摘要： A polymer compound including a structural unit (a0) represented by general formula (a0-1) shown below: wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms; R2 and R3 each independently represents a hydrogen atom, an alkyl group or an alkoxy group, or R2 and R3 may be bonded together to form an alkylene group that may include an oxygen atom or sulfur atom at an arbitrary position, —O— or —S—; R4 and R5 each independently represents a hydrogen atom, an alkyl group that may include an oxygen atom at an arbitrary position, a cycloalkyl group that may include an oxygen atom at an arbitrary position or an alkoxycarbonyl group.
摘要翻译：包含如下所示的由通式（a0-1）表示的结构单元（a0）的高分子化合物：其中R1表示氢原子，1〜5个碳原子的烷基或1〜5个碳原子的氟化烷基; R 2和R 3各自独立地表示氢原子，烷基或烷氧基，或者R 2和R 3可以键合在一起形成任意位置上可以包含氧原子或硫原子的亚烷基，-O-或 - S- R 4和R 5各自独立地表示氢原子，可以包含任意位置的氧原子的烷基，可以包含任意位置的氧原子的环烷基或烷氧基羰基。

48. 发明申请

US20100062379A1 METHOD OF FORMING RESIST PATTERN 有权
标题翻译：形成电阻图案的方法
公开(公告)号：US20100062379A1
公开(公告)日：2010-03-11
申请号：US12441704
申请日：2007-09-18
申请人： Jun Iwashita
发明人： Jun Iwashita
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/0048 , G03F7/70466 , Y10S430/114 , Y10S430/128
摘要： Disclosed is a method of forming a resist pattern, including: applying a positive resist composition on a support 1 to form a first resist film 2; selectively exposing the first resist film 2 through a first mask pattern, and developing it to form a first resist pattern 3; applying a negative resist composition including an organic solvent (S″) containing an alcohol-based organic solvent on the support 1 that the first resist pattern 3 is formed, thereby forming a second resist film 6; and selectively exposing the second resist film 6 through a second mask pattern, and developing it to form a resist pattern denser than the first resist pattern 3.
摘要翻译：公开了一种形成抗蚀剂图案的方法，包括：将正性抗蚀剂组合物涂覆在载体1上以形成第一抗蚀剂膜2; 通过第一掩模图案选择性地暴露第一抗蚀剂膜2，并使其显影以形成第一抗蚀剂图案3; 将包含含有醇类有机溶剂的有机溶剂（S“）的负性抗蚀剂组合物涂布在形成第一抗蚀剂图案3的支撑体1上，从而形成第二抗蚀剂膜6; 并且通过第二掩模图案选择性地暴露第二抗蚀剂膜6，并使其显影以形成比第一抗蚀剂图案3更致密的抗蚀剂图案。

49. 发明申请

US20100055606A1 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20100055606A1
公开(公告)日：2010-03-04
申请号：US12461862
申请日：2009-08-26
申请人： Takeyoshi Mimura , Jun Iwashita
发明人： Takeyoshi Mimura , Jun Iwashita
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397
摘要： The present invention provides a positive resist composition capable of forming a resist pattern with high resolution, and a method of forming a resist pattern.This composition is a positive resist composition including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of acid, and an acid-generator component (B) which generates acid upon irradiation, the resin component (A) containing a polymer including: a core portion represented by general formula (1) [Chemical Formula 1] PX—Y)a (1) wherein P represents an a-valent organic group; a represents an integer of 2 to 20; Y represents an arylene group or an alkylene group of 1 to 12 carbon atoms; and X represents a specific linking group which can be cleaved under action of acid, and arm portions that are bonded to the core portion and are also composed of a polymer chain obtained by an anionic polymerization method.
摘要翻译：本发明提供能够以高分辨率形成抗蚀剂图案的正性抗蚀剂组合物和形成抗蚀剂图案的方法。该组合物是包含在酸性作用下在碱性显影液中显示出增加的溶解性的树脂组分（A）和在照射时产生酸的酸产生剂组分（B）的正性抗蚀剂组合物，所述树脂组分（A）含有包含由通式（1）表示的核心部分的聚合物[化学式1] P-X-Y）a（1）其中P表示a价的有机基团; a表示2〜20的整数， Y表示碳原子数1〜12的亚芳基或亚烷基。 X表示可以在酸作用下切断的特定连接基团，以及与芯部分结合的臂部分，也由通过阴离子聚合法得到的聚合物链构成。

50. 发明授权

US07582409B2 Negative resist composition and method of forming resist pattern 有权
标题翻译：抗蚀剂组合物和抗蚀剂图案形成方法
公开(公告)号：US07582409B2
公开(公告)日：2009-09-01
申请号：US11916651
申请日：2006-06-16
申请人： Jun Iwashita , Ayako Kusaka
发明人： Jun Iwashita , Ayako Kusaka
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0382 , Y10S430/108 , Y10S430/111
摘要： A negative resist composition that includes an alkali-soluble resin component, an acid generator component that generates acid upon exposure, and a cross-linker component, wherein the alkali-soluble resin component is a copolymer that includes a structural unit containing an aliphatic cyclic group having a fluorinated hydroxyalkyl group, and a structural unit derived from an acrylate ester that contains a hydroxyl group-containing aliphatic cyclic group, and the cross-linker component includes an alkylene urea-based cross-linker.
摘要翻译：一种负极性抗蚀剂组合物，其包含碱溶性树脂组分，暴露时产生酸的酸产生剂组分和交联剂组分，其中所述碱溶性树脂组分是包含含有脂族环基团的结构单元的共聚物具有氟化羟烷基，以及衍生自含有羟基的脂肪族环状基团的丙烯酸酯的结构单元，所述交联剂成分包含亚烷基脲系交联剂。

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