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    • 1. 发明授权
    • Positive resist composition and method of forming resist pattern
    • 正型抗蚀剂组合物和形成抗蚀剂图案的方法
    • US08586281B2
    • 2013-11-19
    • US13156159
    • 2011-06-08
    • Jun IwashitaMasahito YahagiKenri KonnoIsamu Takagi
    • Jun IwashitaMasahito YahagiKenri KonnoIsamu Takagi
    • G03F7/028G03F7/039G03F7/26
    • G03F7/0397G03F7/0045G03F7/0046
    • A positive resist composition including: a base component; and a sensitizer which a polymeric compound having a core portion that includes a hydrocarbon group or a heterocycle of two or more valences and at least one arm portion bonded to the core portion and represented by formula (1), and a polymeric compound having a core portion including a polymer having a molecular weight of 500 to 20,000 and at least one arm portion bonded to the core portion and represented by formula (1); and either the base component includes a resin component that generates acid upon exposure and exhibits increased solubility in an alkali developing solution under action of acid, or the positive resist composition further contains an acid generator component including a compound that generates acid upon exposure: —(X)—Y  (1) in which X represents a divalent linking group having an acid dissociable group; and Y represents a polymer chain.
    • 一种正型抗蚀剂组合物,包括:基础组分; 和具有核心部分的高分子化合物,其具有包含烃基或两价以上化合价的杂环,以及至少一个与核心部分结合并由式(1)表示的臂部分的聚合化合物和具有核心的聚合物 包括分子量为500至20,000的聚合物和至少一个结合到核心部分并由式(1)表示的臂部分; 并且基础组分包括在暴露时产生酸的树脂组分,并且在酸的作用下在碱性显影液中显示增加的溶解性,或者正型抗蚀剂组合物还含有包含在暴露时产生酸的化合物的酸产生剂组分: - ( X)-Y(1)其中X表示具有酸解离基团的二价连接基团; Y表示聚合物链。
    • 5. 发明申请
    • RESIST COMPOSITION FOR EUV, METHOD FOR PRODUCING RESIST COMPOSITION FOR EUV, AND METHOD OF FORMING RESIST PATTERN
    • EUV抗性组合物,用于生产EUV抗性组合物的方法和形成耐药性图案的方法
    • US20120208124A1
    • 2012-08-16
    • US13366718
    • 2012-02-06
    • Jun IwashitaKenri Konno
    • Jun IwashitaKenri Konno
    • G03F7/20G03F7/004
    • G03F7/20G03F7/0045G03F7/0046G03F7/0397
    • The present invention is related to a resist composition for EUV exhibiting E0KrF greater than E0EUV, wherein E0KrF is a sensitivity to KrF light of 248 nm, and E0EUV is a sensitivity to EUV light, and a method of producing a resist composition for EUV including preparing the resist composition so that E0KrF is greater than E0EUV, and a method of forming a resist pattern, including: applying the resist composition for EUV to a substrate to form a resist film on the substrate; conducting EUV exposure of the resist film; and developing the resist film to form a resist pattern.According to the present invention, a resist composition for EUV exhibiting excellent lithography properties and pattern shape in EUV lithography, a method of producing the resist composition for EUV, and a method of forming a resist pattern that uses the resist composition for EUV can be provided.
    • 本发明涉及一种表现出大于E0EUV的E0KrF的EUV抗蚀剂组合物,其中E0KrF是对248nm的KrF光的敏感性,E0EUV是对EUV光的敏感性,以及制备用于EUV的抗蚀剂组合物的方法,包括制备 所述抗蚀剂组合物使得E0KrF大于E0EUV,以及形成抗蚀剂图案的方法,包括:将EUV用抗蚀剂组合物施加到基板上以在所述基板上形成抗蚀剂膜; 进行抗蚀剂膜的EUV曝光; 并且使抗蚀剂膜显影以形成抗蚀剂图案。 根据本发明,可以提供在EUV光刻中显示出优异的光刻性能和图案形状的EUV抗蚀剂组合物,制备用于EUV的抗蚀剂组合物的方法和形成使用该抗蚀剂组合物的抗蚀剂图案的方法,用于EUV 。