专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

KR100152449B1 확산이차 방출전자샤워 失效
标题翻译： DIFFUSE二次发射电子淋浴
公开(公告)号：KR100152449B1
公开(公告)日：1998-12-01
申请号：KR1019920012684
申请日：1992-07-16
申请人： 이턴 코포레이션
发明人： 빅터모오리스벤베니스테
IPC分类号： H01L21/22
CPC分类号： H01J37/026 , H01J2237/0045 , H01J2237/31701
摘要： 본 발명은 향상된 비임 중화기를 특징으로 하는 이온주입에 관한 것이다. 실린더형 전자소오스는 이온비임이 주입실에 들어오기전의 위치에서 이온비임을 둘러싼다. 전자소오스의 규칙적으로 공간을 둔 공동은 통전하여 전자를 방출하는 전선필라멘트를 포함한다. 전자는 이온비임의 영역을 통해 가속되고 실린더형 전자 지지대의 안쪽으로 마주한 벽과 충돌한다. 이로 인해 이온비임을 중화시켜 저에너지전자 방출을 한다. 이온화 가스를 전자방출면과 이온비임간의 영역에 주사하므로서 비임중화기 수행이 향상된다.

32. 发明授权

US11915901B2 Methods and systems including pulsed dual-beam charge neutralization 有权
公开(公告)号：US11915901B2
公开(公告)日：2024-02-27
申请号：US18023545
申请日：2021-08-27
申请人： ULVAC-PHI, INCORPORATED
发明人： Scott R. Bryan , Gregory L. Fisher , David H. Narum , Ronald E. Negri
IPC分类号： H01J37/02 , H01J37/28
CPC分类号： H01J37/026 , H01J37/28 , H01J2237/0045 , H01J2237/2527
摘要： Surface imaging apparatuses, surface analysis apparatuses, methods based on detection of secondary electrons or secondary ions that include a spatially scanned and DC or pulsed primary excitation source resulting in secondary electrons or secondary ions which are detected and provide the modulated signal for imaging of the sample; and dual polarity flood beams to effect neutralization of surface charge and surface potential variation.

33. 发明授权

US09000370B2 System and method for controlling charge-up in an electron beam apparatus 有权
标题翻译：用于控制电子束装置中的电荷的系统和方法
公开(公告)号：US09000370B2
公开(公告)日：2015-04-07
申请号：US14512672
申请日：2014-10-13
申请人： Hermes Microvision Inc.
发明人： Weiming Ren , Zhongwei Chen
IPC分类号： H01J37/02 , H01J37/28
CPC分类号： H01J37/026 , H01J37/14 , H01J37/261 , H01J37/28 , H01J2237/0045 , H01J2237/0262 , H01J2237/1405 , H01J2237/2801 , H01J2237/2803
摘要： The present invention provides means and corresponding embodiments to control charge-up in an electron beam apparatus, which can eliminate the positive charges soon after being generated on the sample surface within a frame cycle of imaging scanning. The means are to let some or all of secondary electrons emitted from the sample surface return back to neutralize positive charges built up thereon so as to reach a charge balance within a limited time period. The embodiments use control electrodes to generate retarding fields to reflect some of secondary electrons with low kinetic energies back to the sample surface.
摘要翻译：本发明提供了用于控制电子束装置中的充电的装置和相应的实施例，其可以在成像扫描的帧周期内在样品表面上产生后不久就消除正电荷。该方法是使从样品表面发射的二次电子的一些或全部返回到中和积聚在其上的正电荷，从而在有限的时间段内达到电荷平衡。这些实施例使用控制电极产生延迟场，以将具有低动能的一些二次电子反射回样品表面。

34. 发明授权

US07667208B2 Technique for confining secondary electrons in plasma-based ion implantation 失效
标题翻译：在等离子体离子注入中限制二次电子的技术
公开(公告)号：US07667208B2
公开(公告)日：2010-02-23
申请号：US11550140
申请日：2006-10-17
申请人： Rajesh Dorai
发明人： Rajesh Dorai
IPC分类号： H01J37/244 , H01J37/252
CPC分类号： H01J37/3266 , H01J37/32412 , H01J2237/0045
摘要： A technique for confining secondary electrons on a wafer is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for confining secondary electrons in plasma-based ion implantation. The apparatus and method may comprise a magnetic field portion of a magnetic field configuration placed under a target wafer for generating a magnetic field above the target wafer for confining secondary electrons on the target wafer. The apparatus and method may also comprise a magnetic field above the target wafer that is substantially parallel to an upper surface of the target wafer. The apparatus and method may additionally comprise a magnetic field portion comprising at least one of a plurality of coils, one or more current-carrying wires, and a plurality of magnets.
摘要翻译：公开了一种限制二次电子在晶片上的技术。在一个特定的示例性实施例中，该技术可以被实现为用于限制基于等离子体的离子注入中的二次电子的装置和方法。该装置和方法可以包括放置在目标晶片之下的磁场结构的磁场部分，用于在目标晶片上产生用于限制目标晶片上的二次电子的磁场。该装置和方法还可以包括基本上平行于目标晶片的上表面的目标晶片上方的磁场。该装置和方法可以另外包括磁场部分，其包括多个线圈，一个或多个载流导线和多个磁体中的至少一个。

35. 发明授权

US07417240B2 Apparatus for producing secondary electrons, a secondary electrode, and an acceleration electrode 有权
标题翻译：用于产生二次电子的装置，二次电极和加速电极
公开(公告)号：US07417240B2
公开(公告)日：2008-08-26
申请号：US10718777
申请日：2003-11-21
申请人： Andreas Kyek
发明人： Andreas Kyek
IPC分类号： H01J37/304
CPC分类号： H01J43/02 , H01J37/026 , H01J37/06 , H01J2237/0045
摘要： An apparatus includes a primary electrode and an acceleration electrode. The acceleration electrode or, alternatively, an additional secondary electrode contains a slot that extends obliquely through the acceleration electrode or through the secondary electrode. This measure allows secondary electrons to be produced in a highly effective manner.
摘要翻译：一种装置包括主电极和加速电极。加速电极或备选地，附加的次级电极包含倾斜地穿过加速电极或通过次级电极延伸的槽。该测量允许以高效的方式产生二次电子。

36. 发明授权

US06979822B1 Charged particle beam system 有权
标题翻译：带电粒子束系统
公开(公告)号：US06979822B1
公开(公告)日：2005-12-27
申请号：US10801981
申请日：2004-03-16
申请人： Diane K. Stewart , W. Ralph Knowles , Brian T. Kimball
发明人： Diane K. Stewart , W. Ralph Knowles , Brian T. Kimball
IPC分类号： H01J37/244 , G01N23/00 , G01N23/225 , H01J37/02 , H01J37/252 , H01J37/28 , H01J37/317 , H01L21/027
CPC分类号： G01N23/225 , H01J37/244 , H01J2237/0045 , H01J2237/2817 , H01J2237/31737 , H01J2237/31742 , H01J2237/31798
摘要： A charged particle beam system uses an ion generator for charge neutralization. In some embodiments, the ion generator is configured to maintain an adequate gas pressure at the ion generator to generate ions, but a reduced pressure in the remainder of the vacuum chamber, so that another column can operate in the chamber either simultaneously or after an evacuation process that is much shorter than a process that would be required to evacuate the chamber from the full pressure required at the ion generator. The invention is particularly useful for repair of photolithography masks in a dual beam system.
摘要翻译：带电粒子束系统使用离子发生器进行电荷中和。在一些实施例中，离子发生器被配置为在离子发生器处保持足够的气体压力以在真空室的其余部分中产生离子而减小压力，使得另一个柱可以同时或在排空之后在腔室中操作该过程远远短于将离子发生器所需的全部压力从室内排出所需的过程。本发明对于双光束系统中的光刻掩模的修复特别有用。

37. 发明申请

US20040104657A1 Apparatus for producing secondary electrons, a secondary electrode, and an acceleration electrode 有权
标题翻译：用于产生二次电子的装置，二次电极和加速电极
公开(公告)号：US20040104657A1
公开(公告)日：2004-06-03
申请号：US10718777
申请日：2003-11-21
发明人： Andreas Kyek
IPC分类号： H01J001/02
CPC分类号： H01J43/02 , H01J37/026 , H01J37/06 , H01J2237/0045
摘要： An apparatus includes a primary electrode and an acceleration electrode. The acceleration electrode or, alternatively, an additional secondary electrode contains a slot that extends obliquely through the acceleration electrode or through the secondary electrode. This measure allows secondary electrons to be produced in a highly effective manner.
摘要翻译：一种装置包括主电极和加速电极。加速电极或备选地，附加的次级电极包含倾斜地穿过加速电极或通过次级电极延伸的槽。该测量允许以高效的方式产生二次电子。

38. 发明授权

US06271529B1 Ion implantation with charge neutralization 失效
标题翻译：离子注入与电荷中和
公开(公告)号：US06271529B1
公开(公告)日：2001-08-07
申请号：US09083707
申请日：1998-05-22
申请人： Marvin Farley , Vadim G. Dudnikov , Mehran Nasser-Ghodsi
发明人： Marvin Farley , Vadim G. Dudnikov , Mehran Nasser-Ghodsi
IPC分类号： H01S100
CPC分类号： H01J37/026 , H01J37/063 , H01J37/3171 , H01J2237/0041 , H01J2237/0042 , H01J2237/0044 , H01J2237/0045 , H05H1/54 , H05H3/02
摘要： An ion implanter is provided for implanting ions in a workpiece. The ion implanter includes an apparatus for generating an ion beam and directing it toward a surface of a work piece and a plasma generator for generating plasma to neutralize the ion beam and the work piece surface. The plasma generator has a plasma generator chamber defined by walls, a relatively narrow outlet aperture for plasma produced in the chamber to leave the chamber to neutralize the beam and work piece surface, cathodes, and anodes spaced from the cathodes and from the walls of the chamber. The plasma generator also has magnets arranged within the plasma generator chamber, adjacent the chamber walls to generate a magnetic field to deflect primary electrons emitted from the cathode from directly reaching the anode. The plasma generator also features a conductive shield, positioned within the chamber between the anode and the magnets, the shield having an electric potential selected to deflect electrons, the magnetic field and the conductive shield effective during operation to cause electrons from the cathode to trace extended paths to ionize gas within the chamber to generate plasma before reaching the anode. A drift tube defined by walls through which the ion beam passes before reaching the workpiece is opened into by the aperture opens into the tube. A series of parallel, linear magnets are positioned perpendicular to the general path of the ion beam. The adjacent poles of adjacent magnets are of opposite polarity.
摘要翻译：提供离子注入机用于将离子注入到工件中。离子注入机包括用于产生离子束并将其引导到工件的表面的装置和用于产生等离子体以中和离子束和工件表面的等离子体发生器的装置。等离子体发生器具有由壁限定的等离子体发生器室，用于在室中产生的等离子体的相对较窄的出口孔，以离开室以中和来自阴极和阴极以及与阴极隔离的工件表面，阴极和阳极房间。等离子体发生器还具有布置在等离子体发生器室内的磁体，邻近室壁以产生磁场，以使从阴极发射的一次电子直接到达阳极。等离子体发生器还具有导电屏蔽，其位于阳极和磁体之间的室内，屏蔽具有选择用于偏转电子的电位，磁场和导电屏蔽在操作期间有效以使来自阴极的电子延伸在室内电离气体以在到达阳极之前产生等离子体的路径。由到达工件的离子束通过的由壁限定的漂移管通过孔打开进入管中。一系列平行的线性磁体垂直于离子束的通用路径定位。相邻磁体的相邻磁极具有相反的极性。

39. 发明授权

US5329129A Electron shower apparatus including filament current control 失效
标题翻译：电子淋浴设备包括灯丝电流控制
公开(公告)号：US5329129A
公开(公告)日：1994-07-12
申请号：US849238
申请日：1992-03-10
申请人： Kazuhiro Shono , Naomitsu Fujishita , Kazuhiko Noguchi , Takahisa Nagayama , Shigeo Sasaki
发明人： Kazuhiro Shono , Naomitsu Fujishita , Kazuhiko Noguchi , Takahisa Nagayama , Shigeo Sasaki
IPC分类号： H01J37/02 , H01J37/317 , H01J37/04
CPC分类号： H01J37/026 , H01J37/3171 , H01J2237/0045
摘要： There is disclosed an electron shower apparatus which eliminates the adverse effect of a magnetic field on electrons and which provides electrons in sufficient quantity when primary electrons having low energy are employed. In the apparatus, the magnetic field generated by a filament current is decreased or eliminated by pulsing the filament current or by passing a current opposite in direction to the filament current in the vicinity of the filament current.
摘要翻译：公开了一种电子喷淋装置，其消除了磁场对电子的不利影响，并且当使用具有低能量的一次电子时，其提供足够量的电子。在该装置中，由灯丝电流产生的磁场通过脉冲灯丝电流或通过在灯丝电流附近通过与灯丝电流相反的方向的电流来减小或消除。

40. 发明授权

US5126576A Method and apparatus for controlling the rate of emission of electrons used for charge neutralization in ion implantation 失效
标题翻译：用于控制离子注入中用于电荷中和的电子发射速率的方法和装置
公开(公告)号：US5126576A
公开(公告)日：1992-06-30
申请号：US626897
申请日：1990-12-13
申请人： Michael T. Wauk, II , Bernard Woods , Jose-Antonio Marin , Nicholas J. Bright
发明人： Michael T. Wauk, II , Bernard Woods , Jose-Antonio Marin , Nicholas J. Bright
IPC分类号： C23C14/48 , G01T1/29 , H01J37/02 , H01J37/317 , H01L21/265
CPC分类号： H01J37/026 , H01J37/3171 , H01J2237/0045 , H01J2237/304
摘要： Method and apparatus for the control of the rate of emission of electrons added to an ion implantation beam to neutralize charging effects on semiconductor wafers being processed. A net charging current, or equivalent voltage, is sensed continuously, but is sampled only when a selected wafer, or multiple selected wafers, are positioned to receive the entire cross section of the ion beam. The sampled charging current is used to control the addition of charge-neutralizing electrons to the ion beam, thereby eliminating problems that ensue from the use of an averaged charging current that is sensed without regard to the relative beam position or the number of wafers being processed.
摘要翻译：用于控制添加到离子注入束的电子发射速率以中和对正在处理的半导体晶片的充电效应的方法和装置。净充电电流或等效电压被连续地感测，但是仅当所选择的晶片或多个所选择的晶片被定位成接收离子束的整个横截面时才进行采样。采样的充电电流用于控制向离子束添加电荷中和电子，从而消除了使用感测到的平均充电电流引起的问题，而不考虑相对光束位置或正在处理的晶片数量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式