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1. 发明授权

US4754200A Systems and methods for ion source control in ion implanters 失效
标题翻译：离子注入机离子源控制的系统和方法
公开(公告)号：US4754200A
公开(公告)日：1988-06-28
申请号：US774110
申请日：1985-09-09
申请人： Frederick Plumb , Christopher Wright , Nicholas J. Bright , Derek Aitken , Bernard Harrison
发明人： Frederick Plumb , Christopher Wright , Nicholas J. Bright , Derek Aitken , Bernard Harrison
IPC分类号： H01L21/265 , H01J27/02 , H01J27/14 , H01J37/08 , H01J37/24 , H01J37/248 , H01J37/317 , H01J7/24 , H05B31/26
CPC分类号： H01J37/24 , H01J27/022 , H01J27/14 , H01J37/08 , H01J37/3171
摘要： A method for operating an ion source having a filament-cathode and an anode. The method includes supplying direct current electrical power between the anode and the filament-cathode characterized by substantially constant arc current there between and varying arc voltage on the filament-cathode. Direct current electrical power is also supplied across the filament-cathode. The value of the arc voltage is monitored and the magnitude of electrical power supplied to the filament-cathode is altered in response to detected changes in the arc voltage to return the arc voltage to substantially a preset reference value. The monitoring step and the altering step are carried out at regular preset intervals. The altering step includes deriving an filament power error signal as a prearranged function which includes the difference in values between the monitored arc voltage and the preset reference value multiplied by a predefined integral gain value. The altering step also includes altering the magnitude of electrical power supplied to the filament-cathode by the value of the filament power error signal.
摘要翻译：一种用于操作具有丝 - 阴极和阳极的离子源的方法。该方法包括在阳极和灯丝阴极之间提供直流电力，其特征在于其上的基本恒定的电弧电流和灯丝阴极之间的电弧电压变化。直流电功率也在灯丝阴极上提供。监测电弧电压的值，并且响应于检测到的电弧电压的变化而改变提供给灯丝 - 阴极的电力的大小，以将电弧电压恢复到基本上预设的参考值。监视步骤和改变步骤以规定的预设间隔进行。改变步骤包括导出灯丝功率误差信号作为预定功能，其包括监视的电弧电压和预设参考值之间的值之差乘以预定的积分增益值。改变步骤还包括通过灯丝功率误差信号的值来改变提供给灯丝 - 阴极的电力的大小。

2. 发明授权

US4743767A Systems and methods for ion implantation 失效
标题翻译：离子注入的系统和方法
公开(公告)号：US4743767A
公开(公告)日：1988-05-10
申请号：US905719
申请日：1986-09-09
申请人： Frederick Plumb , Christopher Wright , Nicholas J. Bright , Derek Aitken , Bernard Harrison
发明人： Frederick Plumb , Christopher Wright , Nicholas J. Bright , Derek Aitken , Bernard Harrison
IPC分类号： H01J27/02 , H01J27/14 , H01J37/08 , H01J37/24 , H01J37/317
CPC分类号： H01J37/3171 , H01J27/022 , H01J27/14 , H01J37/08 , H01J37/24
摘要： An ion implantation system includes a beam generating arrangement for generating an ion beam characterized by good beam stability and for directing the ion beam along a prearranged path. A beam stopping arrangement is disposed in the path of the beam for stopping and collecting the ions in the beam. A workpiece scanning arrangement is positioned upstream of the beam stopping arrangement for scanning a workpiece through the beam in a prearranged combined fast scan directional motion and a slow scan directional motion with the slow scan directional motion being characterized by an end of scan position in which the ion beam falls completely on the beam stopping arrangement. A dose measuring arrangement is coupled to the beam stopping arrangement and includes arrangements for measuring the ion beam current on the beam stop at the end of scan position of the workpiece scanning arrangement, for calculating the average ion beam current striking the workpiece during each slow scan directional motion as the average of two successive ion beam current measurements before and after the motion, and for calculating the ion dose delivered to the workpiece based on the calculated average ion beam current and know geometrical factors associated with the fast and slow scan motions.
摘要翻译：离子注入系统包括用于产生特征在于良好光束稳定性并用于沿着预定路径引导离子束的离子束的光束产生装置。光束停止装置设置在光束的路径中，用于停止和收集光束中的离子。工件扫描装置位于光束停止装置的上游，用于以预先布置的组合快速扫描定向运动和慢速扫描定向运动扫描通过光束的工件，其中慢扫描定向运动的特征在于扫描位置的结束，其中离子束完全落在光束停止装置上。剂量测量装置耦合到光束停止装置，并且包括用于测量在工件扫描装置的扫描位置结束时在光束挡块上的离子束电流的装置，用于计算在每个慢扫描期间撞击工件的平均离子束电流作为运动之前和之后的两个连续的离子束电流测量的平均值的方向运动，以及用于基于计算出的平均离子束电流和知道与快速和慢速扫描运动相关联的几何因素来计算递送到工件的离子剂量。

3. 发明授权

US5126576A Method and apparatus for controlling the rate of emission of electrons used for charge neutralization in ion implantation 失效
标题翻译：用于控制离子注入中用于电荷中和的电子发射速率的方法和装置
公开(公告)号：US5126576A
公开(公告)日：1992-06-30
申请号：US626897
申请日：1990-12-13
申请人： Michael T. Wauk, II , Bernard Woods , Jose-Antonio Marin , Nicholas J. Bright
发明人： Michael T. Wauk, II , Bernard Woods , Jose-Antonio Marin , Nicholas J. Bright
IPC分类号： C23C14/48 , G01T1/29 , H01J37/02 , H01J37/317 , H01L21/265
CPC分类号： H01J37/026 , H01J37/3171 , H01J2237/0045 , H01J2237/304
摘要： Method and apparatus for the control of the rate of emission of electrons added to an ion implantation beam to neutralize charging effects on semiconductor wafers being processed. A net charging current, or equivalent voltage, is sensed continuously, but is sampled only when a selected wafer, or multiple selected wafers, are positioned to receive the entire cross section of the ion beam. The sampled charging current is used to control the addition of charge-neutralizing electrons to the ion beam, thereby eliminating problems that ensue from the use of an averaged charging current that is sensed without regard to the relative beam position or the number of wafers being processed.
摘要翻译：用于控制添加到离子注入束的电子发射速率以中和对正在处理的半导体晶片的充电效应的方法和装置。净充电电流或等效电压被连续地感测，但是仅当所选择的晶片或多个所选择的晶片被定位成接收离子束的整个横截面时才进行采样。采样的充电电流用于控制向离子束添加电荷中和电子，从而消除了使用感测到的平均充电电流引起的问题，而不考虑相对光束位置或正在处理的晶片数量。

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