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31. 发明授权

US07339195B2 Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method 有权
标题翻译：半导体发光器件及其制造方法，半导体器件及其制造方法
公开(公告)号：US07339195B2
公开(公告)日：2008-03-04
申请号：US10606176
申请日：2003-06-25
申请人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
发明人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0425 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
摘要翻译：由氮化物III-V族化合物半导体制成的半导体发光器件包括由含有In和Ga的第一氮化物III-V化合物半导体构成的有源层，例如InGaN; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

32. 发明授权

US07149235B2 Multi-beam semiconductor laser device 失效
标题翻译：多光束半导体激光器件
公开(公告)号：US07149235B2
公开(公告)日：2006-12-12
申请号：US11132981
申请日：2005-05-19
申请人： Tsuyoshi Tojo , Tomonori Hino , Osamu Goto , Yoshifumi Yabuki , Shinichi Ansai , Shiro Uchida , Masao Ikeda
发明人： Tsuyoshi Tojo , Tomonori Hino , Osamu Goto , Yoshifumi Yabuki , Shinichi Ansai , Shiro Uchida , Masao Ikeda
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/0425 , H01S5/32341 , H01S5/4087
摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μm while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.
摘要翻译：提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极）。激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光之间的距离B 2 <2> 条纹（42D）和n型电极（52A）不大于150μm。

33. 发明授权

US06991952B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06991952B2
公开(公告)日：2006-01-31
申请号：US10613624
申请日：2003-07-03
申请人： Takashi Mizuno , Motonobu Takeya , Takeharu Asano , Masao Ikeda
发明人： Takashi Mizuno , Motonobu Takeya , Takeharu Asano , Masao Ikeda
IPC分类号： H01L21/00
CPC分类号： H01S5/0224 , H01S5/0021 , H01S5/02212 , H01S5/02224 , H01S5/02272 , H01S5/32341
摘要： Provided is a method of manufacturing a semiconductor device, which is adapted to prevent the deposition of a material on a laser light emitting edge, thereby enabling an improvement in longevity characteristics of a laser. A base having a laser chip mounted thereon is irradiated with an energy beam having a shorter wavelength than an oscillation wavelength of the laser chip. Photolysis and oxidation caused by the energy beam cause the removal of an adherent from the overall base or the deterioration thereof, and incidentally, the adherent is derived from an adhesive sheet used to attach the laser chip to the base, or the like. Preferably, laser light or ultraviolet light, for example, is used as the energy beam. Alternatively, the base having the laser chip mounted thereon may be irradiated with plasma so as to remove the adherent utilizing an ion cleaning effect of the plasma. After irradiation, a top is mounted to the base so as to shut off the laser chip from the outside.
摘要翻译：提供一种制造半导体器件的方法，其适于防止材料沉积在激光发射边缘上，从而能够提高激光器的寿命特性。用具有比激光芯片的振荡波长短的波长的能量束照射安装有激光芯片的基座。由能量束引起的光解和氧化导致从整个基底中去除附着物或其劣化，附带地，粘合剂衍生自用于将激光芯片附着到基底的粘合片等。优选地，例如使用激光或紫外线作为能量束。或者，可以用等离子体照射安装有激光芯片的基座，以便利用等离子体的离子清洁效果去除粘附剂。照射后，将顶部安装在基座上，以从外部切断激光芯片。

34. 发明申请

US20050218422A1 Multi-beam semiconductor laser device 失效
标题翻译：多光束半导体激光器件
公开(公告)号：US20050218422A1
公开(公告)日：2005-10-06
申请号：US11132981
申请日：2005-05-19
申请人： Tsuyoshi Tojo , Tomonori Hino , Osamu Goto , Yoshifumi Yabuki , Shinichi Ansai , Shiro Uchida , Masao Ikeda
发明人： Tsuyoshi Tojo , Tomonori Hino , Osamu Goto , Yoshifumi Yabuki , Shinichi Ansai , Shiro Uchida , Masao Ikeda
IPC分类号： H01L21/205 , H01S5/042 , H01S5/22 , H01S5/323 , H01S5/40 , H01L29/24
CPC分类号： H01S5/4031 , H01S5/0425 , H01S5/32341 , H01S5/4087
摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μM while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.
摘要翻译：提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极）。激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光器之间的距离B <2 <2> 条纹（42D）和n型电极（52A）不大于150μm。

35. 发明申请

US20050048508A1 Trehalose receptor and method for detecting trehalose with the same 审中-公开
标题翻译：海藻糖受体和用于检测海藻糖的方法
公开(公告)号：US20050048508A1
公开(公告)日：2005-03-03
申请号：US10663650
申请日：2003-09-17
申请人： Toshio Ariyasu , Shuji Matsumoto , Fumiyo Kyono , Toshiharu Hanaya , Shigeyuki Arai , Masao Ikeda , Masashi Kurimoto
发明人： Toshio Ariyasu , Shuji Matsumoto , Fumiyo Kyono , Toshiharu Hanaya , Shigeyuki Arai , Masao Ikeda , Masashi Kurimoto
IPC分类号： G01N33/53 , C07H21/04 , C07K14/47 , C07K14/705 , C12N5/10 , C12N15/09 , C12Q1/02 , G01N33/566 , C12Q1/68 , G01N33/567
CPC分类号： C07H21/04 , C07K14/705 , G01N33/566
摘要： Disclosed are a mammalian trehalose receptor which comprises a protein comprising any of the amino acid sequences of SEQ ID NOs: 1, 2, 3 and 5; or a protein comprising any of the amino acid sequences of SEQ ID NOs: 1, 4 and 5; and a method for detecting trehalose using an animal cell in which the trehalose receptor has been expressed.
摘要翻译：公开了哺乳动物海藻糖受体，其包含包含SEQ ID NO：1,2,3和5的任何氨基酸序列的蛋白质; 或包含SEQ ID NO：1,4和5的任何氨基酸序列的蛋白质; 以及使用已经表达海藻糖受体的动物细胞检测海藻糖的方法。

36. 发明授权

US6111277A Semiconductor device as well as light emitting semiconductor device 失效
标题翻译：半导体器件以及发光半导体器件
公开(公告)号：US6111277A
公开(公告)日：2000-08-29
申请号：US176270
申请日：1998-10-21
申请人： Masao Ikeda
发明人： Masao Ikeda
IPC分类号： H01L21/205 , H01L33/00 , H01L33/02 , H01L33/12 , H01L33/32 , H01S5/00 , H01S5/20 , H01S5/323 , H01S5/343
CPC分类号： H01L33/025 , H01L33/007 , H01L33/0075 , H01S5/2077
摘要： A semiconductor device such as a light emitting semiconductor device comprising a mask layer having opening areas and a selective growing layer comprising a semiconductor grown selectively by way of the mask layer, with each of the mask layer and the selective growing layer being disposed by two or more layers alternately. The semiconductor device is manufactured by a step of laminating on a substrate a mask layer having opening areas and a selective growing layer comprising a semiconductor grown selectively way of a mask layer, each by two or more layers alternately and a subsequent step of laminating semiconductor layers thereon. Threading dislocations in the underlying layer are interrupted by the first mask layer and the second mask layer and do not propagate to the semiconductor layer. The density of the threading dislocations is lowered over the entire surface and the layer thickness can be reduced.
摘要翻译：一种半导体器件，例如包括具有开口区域的掩模层和包括通过掩模层选择性地生长的半导体的选择性生长层的发光半导体器件，其中掩模层和选择性生长层中的每一个被设置为两个或更多层交替。半导体器件通过在衬底上层叠具有开口面积的掩模层和选择性生长层的步骤来制造，所述选择性生长层包括选择性地形成掩模层的半导体生长层，每个通过两层或更多层交替层叠，并且随后的步骤层叠半导体层上。下层中的穿透位错被第一掩模层和第二掩模层中断，并且不传播到半导体层。穿透位错的密度在整个表面上降低，并且可以减小层的厚度。

37. 发明授权

US5989339A MBE system and semiconductor device fabricated, using same 失效
标题翻译： MBE系统和半导体器件制造，使用相同
公开(公告)号：US5989339A
公开(公告)日：1999-11-23
申请号：US527456
申请日：1995-09-13
申请人： Koshi Tamamura , Hironori Tsukamoto , Masao Ikeda
发明人： Koshi Tamamura , Hironori Tsukamoto , Masao Ikeda
IPC分类号： C30B23/02 , H01L21/203 , H01L21/363 , H01L33/28 , H01S5/00 , C30B29/48
CPC分类号： H01L33/0083 , C30B23/02 , C30B29/48 , H01L21/02395 , H01L21/02463 , H01L21/02474 , H01L21/02477 , H01L21/02562
摘要： A molecular beam epitaxy system having a plurality of chambers which contain at least a first chamber and a second chamber. The first chamber is used to form II-VI column compound semiconductor layers not containing Te. The second chamber is used to form II-VI column compound semiconductor layers containing at least Te. A semiconductor device having an ohmic characteristics can be fabricated without mixing Te into other layers.
摘要翻译：一种具有至少包含第一室和第二室的多个室的分子束外延系统。第一室用于形成不含Te的II-VI列化合物半导体层。第二室用于形成至少含有Te的II-VI列化合物半导体层。可以制造具有欧姆特性的半导体器件，而不将Te混合到其它层中。

38. 发明授权

US5279744A Method for purification of an amino acid using ion exchange resin 失效
标题翻译：使用离子交换树脂纯化氨基酸的方法
公开(公告)号：US5279744A
公开(公告)日：1994-01-18
申请号：US764450
申请日：1991-09-24
申请人： Hisao Itoh , Katsumi Toide , Masao Ikeda
发明人： Hisao Itoh , Katsumi Toide , Masao Ikeda
IPC分类号： B01J39/04 , B01D15/04 , B01J47/10 , C07C227/40 , C07C229/02 , B01D15/02
CPC分类号： C07C227/40 , B01J47/10
摘要： A method for purification of an amino acid which comprises contacting an amino acid solution containing impurities with an ion exchange resin to selectively adsorb the amino acid onto the resin, eluting and recovering the adsorbed amino acid whereby the resin is contacted with the amino acid solution in countercurrent continuous multiple steps during adsorption and an eluent is contacted with the adsorbed resin in countercurrent continuous multiple steps during elution.
摘要翻译：一种用于纯化氨基酸的方法，其包括将含杂质的氨基酸溶液与离子交换树脂接触以选择性地将氨基酸吸附到树脂上，洗脱并回收吸附的氨基酸，由此树脂与氨基酸溶液接触吸附过程中逆流连续多步，洗脱液在洗脱过程中以逆流连续多步与吸附树脂接触。

39. 发明授权

US4008219A 4-Benzazonine derivatives and process for preparation thereof 失效
标题翻译： 4-苯并氮杂衍生物及其制备方法
公开(公告)号：US4008219A
公开(公告)日：1977-02-15
申请号：US467520
申请日：1974-05-06
申请人： Masao Ikeda , Shigeo Miyamoto , Thutomu Nozawa , Akira Kurobe , Osamu Futsukaichi
发明人： Masao Ikeda , Shigeo Miyamoto , Thutomu Nozawa , Akira Kurobe , Osamu Futsukaichi
IPC分类号： C07D223/14 , C07D225/06
CPC分类号： C07D223/14 , C07D225/06
摘要： Novel 4-Benzazonine derivatives and their salts, and processes for the preparation thereof are disclosed. These 4-benzazonine derivatives are represented by the following general formula: ##STR1## wherein R stands for --H, --OH or a lower alkoxy group such as --OCH.sub.3, R.sub.1 designates --H or a lower alkyl group such as --CH.sub.3 and --CH.sub.2 CH.sub.3, R.sub.2 indicates --H or a lower alkyl group such as --CH.sub.3, R.sub.3 stands for --H, a linear or branched, saturated or unsaturated alkyl group having 1 to 4 carbon atoms, a mono- or di-hydroxy lower alkyl group such as --CH.sub.2 OH and ##STR2## a saturated cyclic hydrocarbon group having 3 to 6 carbon atoms or a substituted or unsubstituted aromatic hydrocarbon group having 6 to 8 carbon atoms, and R.sub.4 designates --H, --OH or = O. These compounds have medicinal effects, especially therapeutic activities on the central nervous system, such as analgesic, antitussive and sedative activities.
摘要翻译：公开了新的4-苯并氮杂衍生物及其盐，以及其制备方法。这些4-苯并氮杂衍生物由以下通式表示：其中R代表-H，-OH或低级烷氧基，例如-OCH 3，R 1表示-H或低级烷基如-CH 3和 - CH 2 CH 3，R 2表示-H或低级烷基如-CH 3，R 3表示-H，直链或支链，饱和或不饱和的具有1至4个碳原子的烷基，一或二羟基低级烷基如作为-CH 2 OH和具有3〜6个碳原子的饱和环状烃基或具有6〜8个碳原子的取代或未取代的芳香族烃基，R4表示-H，-OH或= O.这些化合物具有药效特别是中枢神经系统的治疗活动，如止痛，镇咳和镇静活动。

40. 发明授权

US09905719B2 Multi-junction solar cell, photoelectric conversion device, and compound-semiconductor-layer lamination structure 有权
公开(公告)号：US09905719B2
公开(公告)日：2018-02-27
申请号：US14345001
申请日：2012-09-03
申请人： Hiroshi Yoshida , Masao Ikeda , Shiro Uchida , Takashi Tange , Masaru Kuramoto , Masayuki Arimochi , Hui Yang , Shulong Lu , Xinhe Zheng
发明人： Hiroshi Yoshida , Masao Ikeda , Shiro Uchida , Takashi Tange , Masaru Kuramoto , Masayuki Arimochi , Hui Yang , Shulong Lu , Xinhe Zheng
IPC分类号： H01L31/0687 , H01L31/0352 , H01L31/0304
CPC分类号： H01L31/0687 , H01L31/03046 , H01L31/0352 , H01L31/06875 , Y02E10/544
摘要： A multi-junction solar cell that is lattice-matched with a base, and that includes a sub-cell having a desirable band gap is provided. A plurality of sub-cells are laminated, each including first and second compound semiconductor layers. At least one predetermined sub-cell is configured of first layers and a second layer. In each of the first layers, a 1-A layer and a 1-B layer are laminated. In the second layer, a 2-A layer and a 2-B layer are laminated. A composition A of the 1-A layer and the 2-A layer is determined based on a value of a band gap of the predetermined sub-cell. A composition B of the 1-B layer and the 2-B layer is determined based on a difference between a base lattice constant of the base and a lattice constant of the composition A. Thicknesses of 1-B layer and 2-B layer are determined based on difference between base lattice constant and a lattice constant of composition B, and on thickness of the 1-A layer and thickness of 2-A layer.

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