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1. 发明申请

US20140033830A1 GRINDING ABNORMALITY MONITORING METHOD AND GRINDING ABNORMALITY MONITORING DEVICE 有权
标题翻译：研磨异常监测方法和研磨异常监测装置
公开(公告)号：US20140033830A1
公开(公告)日：2014-02-06
申请号：US13884777
申请日：2011-12-22
申请人： Tomoyuki Kasuga , Atsushi Saito , Takayuki Yoshimi , Masao Ikeda
发明人： Tomoyuki Kasuga , Atsushi Saito , Takayuki Yoshimi , Masao Ikeda
IPC分类号： B24B49/16 , G01L5/00
CPC分类号： G01L5/0076 , B24B5/04 , B24B19/06 , B24B49/003 , B24B49/105 , B24B49/14 , B24B49/16 , G01L5/12
摘要： A grinding abnormality monitoring method and device for grinding a plurality of works of the same type are proposed which can improve the accuracy of judgment whether an abnormality is generated or not by properly setting a threshold value. According to the method or the device, by setting at least one of upper and lower limit values of a trial grinding load detected at the trial grinding of at least one of the works, an occurrence of grinding abnormality is judged when an actual grinding load detected at the actual grinding of work exceeds at least one of the upper and lower limit values thereof which varies depending on the time elapsed from the start of the actual grinding or a position of work relative to a grinding wheel.
摘要翻译：提出了一种用于研磨相同类型的多个作业的研磨异常监测方法和装置，其可以通过适当地设定阈值来提高判断是否产生异常的判断精度。根据该方法或装置，通过设定在至少一个工件的试磨中检测到的试验研磨载荷的上限值和下限值中的至少一个，当检测到实际研磨载荷时，判断出磨削异常的发生在实际的工件磨削中，超过其上下限值中的至少一个，这些上限值和下限值根据实际磨削开始时所经过的时间或相对于砂轮的工作位置而变化。

2. 发明授权

US08442079B2 Mode-locked semiconductor laser device and driving method thereof 有权
标题翻译：锁模半导体激光器件及其驱动方法
公开(公告)号：US08442079B2
公开(公告)日：2013-05-14
申请号：US13035540
申请日：2011-02-25
申请人： Tomoyuki Oki , Masaru Kuramoto , Masao Ikeda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama
发明人： Tomoyuki Oki , Masaru Kuramoto , Masao Ikeda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama
IPC分类号： H01S3/098
摘要： Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.
摘要翻译：提供了一种锁模半导体激光器件的驱动方法，其包括层叠结构，其中第一化合物半导体层，具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压，第二电极和第一电极。层叠结构形成在具有极性的化合物半导体基板上，第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。阱层的深度为1nm以上且10nm以下。势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。通过将电流从第二电极通过层压结构传递到第一电极，在发射区域中产生光脉冲。

3. 发明授权

US08290005B2 Method of driving a laser diode 失效
公开(公告)号：US08290005B2
公开(公告)日：2012-10-16
申请号：US13212244
申请日：2011-08-18
申请人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
IPC分类号： H01S3/13
CPC分类号： H01S5/06216 , H01S5/0428
摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

4. 发明申请

US20120002690A1 METHOD OF DRIVING A LASER DIODE 失效
公开(公告)号：US20120002690A1
公开(公告)日：2012-01-05
申请号：US13212244
申请日：2011-08-18
申请人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
IPC分类号： H01S3/13
CPC分类号： H01S5/06216 , H01S5/0428
摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

5. 发明申请

US20120002271A1 SEMICONDUCTOR OPTICAL AMPLIFIER 有权
标题翻译：半导体光放大器
公开(公告)号：US20120002271A1
公开(公告)日：2012-01-05
申请号：US13166900
申请日：2011-06-23
申请人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
发明人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
IPC分类号： H01S3/00
CPC分类号： H01S5/1064 , H01S5/0425 , H01S5/0602 , H01S5/0657 , H01S5/16 , H01S5/22 , H01S5/32341 , H01S5/34333 , H01S5/50
摘要： A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.
摘要翻译：半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。层叠结构具有脊形条纹结构。当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

6. 发明授权

US08008165B2 Nitride semiconductor wafer and method of processing nitride semiconductor wafer 失效
标题翻译：氮化物半导体晶片和氮化物半导体晶片的加工方法
公开(公告)号：US08008165B2
公开(公告)日：2011-08-30
申请号：US12836001
申请日：2010-07-14
申请人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
发明人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
IPC分类号： H01L21/30
CPC分类号： H01L21/02008 , B24B37/08 , H01L21/02024 , Y10S438/959
摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs.
摘要翻译：由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。

7. 发明申请

US20090198255A1 Hemorrhoid ligation apparatus, ligation kit containing the apparatus and method for ligating hemorrhoid 失效
标题翻译：痔疮结扎装置，包含痔疮结扎装置及方法的连接试剂盒
公开(公告)号：US20090198255A1
公开(公告)日：2009-08-06
申请号：US12071057
申请日：2008-02-14
申请人： Masao Ikeda
发明人： Masao Ikeda
IPC分类号： A61B17/00
CPC分类号： A61B17/12013 , A61B50/20 , A61B50/30 , A61B2017/12018 , Y10T29/53657
摘要： [PROBLEM TO BE SOLVED] A hemorrhoid ligation apparatus that allows the operator to handle with a single hand to ligate a hemorrhoid, under minimized risk of committing improper operation, is to be provided.[MEANS FOR SOLVING] The hemorrhoid ligation apparatus (10) includes a main cylinder (12) to which an O-ring (50) for ligating the hemorrhoid is to be attached on an outer circumferential surface of a front end portion, a sub cylinder (14) air-tightly and slidably provided inside the main cylinder (12), so as to suck the hemorrhoid into inside the front end portion of the main cylinder (12) upon being drawn toward a rear end portion of the main cylinder (12), an operating fluid loaded inside the sub cylinder (14), and a plunger (16) air-tightly and slidably provided inside the sub cylinder (14), so as to pressurize the operating fluid upon being squeezed toward a front end portion of the sub cylinder (14), to thereby squeeze the O-ring (50) toward the front end portion of the main cylinder (12) with the pressurized operating fluid, thus detaching the O-ring (50) from the main cylinder (12).
摘要翻译： [待解决的问题]提供了一种痔疮结扎装置，其能够在最小程度地进行不正当的操作的风险下使手术者用单手手术来结扎痔疮。 [解决方案]痔疮结扎装置（10）包括主缸（12），用于将痔疮结扎的O形环（50）安装在前端部的外周面上，副缸（14）气密地滑动地设置在主气缸（12）的内部，以便在朝向主气缸（12）的后端部抽吸时将痔疮吸入主气缸（12）的前端部内），负载在子气缸（14）内的工作液体，以及气密地且可滑动地设置在子气缸（14）内部的柱塞（16），以便在朝向前述前端部分从而通过加压工作流体将O形环（50）朝向主缸（12）的前端部挤压，从而将O形环（50）从主缸（12）分离）。

8. 发明授权

US07535082B2 Nitride semiconductor wafer and method of processing nitride semiconductor wafer 有权
标题翻译：氮化物半导体晶片和氮化物半导体晶片的加工方法
公开(公告)号：US07535082B2
公开(公告)日：2009-05-19
申请号：US11055599
申请日：2005-02-11
申请人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
发明人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
IPC分类号： H01L23/544
CPC分类号： H01L21/02008 , B24B37/08 , H01L21/02024 , Y10S438/959
摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical/mechanical polishing has been requested in vain. Current GaN wafers have roughened bottom surfaces, which induce contamination of particles and fluctuation of thickness.
摘要翻译：由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。通常的单面抛光具有将晶片与平面盘上的表面胶合的步骤，使另一表面与下转台接触，按压盘，旋转盘，旋转转台并磨削下表面，不能补救固有失真。失真会加剧外延晶片的形态，降低通孔掩模曝光的产量，并引起表面裂纹。氮化物晶体是刚性但脆弱的。化学/机械抛光已被要求徒劳。当前的GaN晶圆已经粗糙化了底面，这引起了颗粒的污染和厚度的波动。

9. 发明授权

US07528540B2 Light emitting device and optical device using the same 失效
标题翻译：发光装置及使用其的光学装置
公开(公告)号：US07528540B2
公开(公告)日：2009-05-05
申请号：US11242768
申请日：2005-10-04
申请人： Masao Ikeda
发明人： Masao Ikeda
IPC分类号： H01J1/62
CPC分类号： B82Y20/00 , G11B7/1275 , G11B2007/0006 , H01L25/0753 , H01L25/0756 , H01L2924/0002 , H01S5/02212 , H01S5/0224 , H01S5/02268 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/2214 , H01S5/2231 , H01S5/32341 , H01S5/34326 , H01S5/34333 , H01S5/347 , H01S5/4043 , H01S5/4087 , H04N9/315 , H01L2924/00
摘要： A light emitting device which can be easily manufactured and can control the positions of light emission precisely, and an optical device. A first and second light emitting elements are formed on one face of a supporting base. The first light emitting element has an active layer made of GaInN mixed crystal on a GaN-made first substrate on the side thereof on which the supporting base is disposed. The second light emitting element has lasing portions on a GaAs-made second substrate on the side thereof on which the supporting base is disposed. Since the first and second light emitting elements are not grown on the same substrate, a multiple-wavelength laser having the output wavelength of around 400 nm can be easily obtained. Since the first substrate is transparent in the visible region, the positions of light emitting regions in the first and second light emitting elements can be precisely controlled by lithography.
摘要翻译：可容易地制造并能够精确地控制发光位置的发光器件和光学器件。第一和第二发光元件形成在支撑基座的一个面上。第一发光元件在其上设置有支撑基底的一侧的GaN制的第一基板上具有由GaInN混晶构成的有源层。第二发光元件在其上设置有支撑基底的一侧的GaAs制造的第二基板上具有激光部分。由于第一发光元件和第二发光元件不在同一衬底上生长，所以可以容易地获得具有约400nm的输出波长的多波长激光器。由于第一基板在可见光区域是透明的，因此通过光刻可以精确地控制第一和第二发光元件中的发光区域的位置。

10. 发明申请

US20060273326A1 Semiconductor Light Emitting Device, its Manufacturing Method, Semiconductor Device and Its Manufacturing Method 有权
标题翻译：半导体发光器件及其制造方法，半导体器件及其制造方法
公开(公告)号：US20060273326A1
公开(公告)日：2006-12-07
申请号：US11425595
申请日：2006-06-21
申请人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
发明人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0425 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
摘要翻译：由氮化物III-V族化合物半导体制成的半导体发光器件包括由含有In和Ga的第一氮化物III-V化合物半导体构成的有源层，例如InGaN; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

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