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1. 发明授权

US09905719B2 Multi-junction solar cell, photoelectric conversion device, and compound-semiconductor-layer lamination structure 有权
公开(公告)号：US09905719B2
公开(公告)日：2018-02-27
申请号：US14345001
申请日：2012-09-03
申请人： Hiroshi Yoshida , Masao Ikeda , Shiro Uchida , Takashi Tange , Masaru Kuramoto , Masayuki Arimochi , Hui Yang , Shulong Lu , Xinhe Zheng
发明人： Hiroshi Yoshida , Masao Ikeda , Shiro Uchida , Takashi Tange , Masaru Kuramoto , Masayuki Arimochi , Hui Yang , Shulong Lu , Xinhe Zheng
IPC分类号： H01L31/0687 , H01L31/0352 , H01L31/0304
CPC分类号： H01L31/0687 , H01L31/03046 , H01L31/0352 , H01L31/06875 , Y02E10/544
摘要： A multi-junction solar cell that is lattice-matched with a base, and that includes a sub-cell having a desirable band gap is provided. A plurality of sub-cells are laminated, each including first and second compound semiconductor layers. At least one predetermined sub-cell is configured of first layers and a second layer. In each of the first layers, a 1-A layer and a 1-B layer are laminated. In the second layer, a 2-A layer and a 2-B layer are laminated. A composition A of the 1-A layer and the 2-A layer is determined based on a value of a band gap of the predetermined sub-cell. A composition B of the 1-B layer and the 2-B layer is determined based on a difference between a base lattice constant of the base and a lattice constant of the composition A. Thicknesses of 1-B layer and 2-B layer are determined based on difference between base lattice constant and a lattice constant of composition B, and on thickness of the 1-A layer and thickness of 2-A layer.

2. 发明申请

US20140345680A1 MULTI-JUNCTION SOLAR CELL, PHOTOELECTRIC CONVERSION DEVICE, AND COMPOUND-SEMICONDUCTOR-LAYER LAMINATION STRUCTURE 有权
标题翻译：多功能太阳能电池，光电转换装置和复合半导体层层压结构
公开(公告)号：US20140345680A1
公开(公告)日：2014-11-27
申请号：US14345001
申请日：2012-09-03
申请人： Hiroshi Yoshida , Masao Ikeda , Shiro Uchida , Takashi Tange , Masaru Kuramoto , Masayuki Arimochi , Hui Yang , Shulong Lu , Xinhe Zheng
发明人： Hiroshi Yoshida , Masao Ikeda , Shiro Uchida , Takashi Tange , Masaru Kuramoto , Masayuki Arimochi , Hui Yang , Shulong Lu , Xinhe Zheng
IPC分类号： H01L31/0687 , H01L31/0304
CPC分类号： H01L31/0687 , H01L31/03046 , H01L31/0352 , H01L31/06875 , Y02E10/544
摘要： A multi-junction solar cell that is lattice-matched with a base, and that includes a sub-cell having a desirable band gap is provided. A plurality of sub-cells are laminated, each including first and second compound semiconductor layers. At least one predetermined sub-cell is configured of first layers and a second layer. In each of the first layers, a 1-A layer and a 1-B layer are laminated. In the second layer, a 2-A layer and a 2-B layer are laminated. A composition A of the 1-A layer and the 2-A layer is determined based on a value of a band gap of the predetermined sub-cell. A composition B of the 1-B layer and the 2-B layer is determined based on a difference between a base lattice constant of the base and a lattice constant of the composition A. Thicknesses of 1-B layer and 2-B layer are determined based on difference between base lattice constant and a lattice constant of composition B, and on thickness of the 1-A layer and thickness of 2-A layer.
摘要翻译：提供了与基底晶格匹配并且包括具有期望带隙的子单元的多结太阳能电池。层叠多个子单元，每个子单元包括第一和第二化合物半导体层。至少一个预定子单元由第一层和第二层构成。在每个第一层中，层叠1-A层和1-B层。在第二层中，层叠2-A层和2-B层。基于预定子单元的带隙的值确定1-A层和2-A层的组成A. 基于碱的基本晶格常数与组成A的晶格常数之间的差异确定1-B层和2-B层的组合物B. 1-B层和2-B层的厚度为基于晶格常数和组成B的晶格常数之间的差异以及1-A层的厚度和2-A层的厚度确定。

3. 发明申请

US20110216788A1 MODE-LOCKED SEMICONDUCTOR LASER DEVICE AND DRIVING METHOD THEREOF 有权
标题翻译：模式锁定半导体激光器件及其驱动方法
公开(公告)号：US20110216788A1
公开(公告)日：2011-09-08
申请号：US13035540
申请日：2011-02-25
申请人： Tomoyuki Oki , Masaru Kuramoto , Masao Ikeda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama
发明人： Tomoyuki Oki , Masaru Kuramoto , Masao Ikeda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama
IPC分类号： H01S3/098
摘要： Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.
摘要翻译：提供了一种锁模半导体激光器件的驱动方法，其包括层叠结构，其中第一化合物半导体层，具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压，第二电极和第一电极。层叠结构形成在具有极性的化合物半导体基板上，第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。阱层的深度为1nm以上且10nm以下。势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。通过将电流从第二电极通过层压结构传递到第一电极，在发射区域中产生光脉冲。

4. 发明授权

US08329483B2 Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same 有权
标题翻译：双段半导体激光装置及其制造方法及其驱动方法
公开(公告)号：US08329483B2
公开(公告)日：2012-12-11
申请号：US12726524
申请日：2010-03-18
申请人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
发明人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
IPC分类号： H01L21/00
CPC分类号： H01S5/0625 , B82Y20/00 , H01S5/0425 , H01S5/0602 , H01S5/0658 , H01S5/14 , H01S5/22 , H01S5/3216 , H01S5/34333
摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.
摘要翻译：一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。

5. 发明申请

US20120281726A1 BI-SECTION SEMICONDUCTOR LASER DEVICE, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR DRIVING THE SAME 有权
标题翻译：双分半导体激光器件，其制造方法及其驱动方法
公开(公告)号：US20120281726A1
公开(公告)日：2012-11-08
申请号：US13553380
申请日：2012-07-19
申请人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
发明人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
IPC分类号： H01S5/02
CPC分类号： H01S5/0625 , B82Y20/00 , H01S5/0425 , H01S5/0602 , H01S5/0658 , H01S5/14 , H01S5/22 , H01S5/3216 , H01S5/34333
摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.
摘要翻译：一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。

6. 发明申请

US20100020838A1 LASER DIODE, OPTICAL DISK DEVICE AND OPTICAL PICKUP 失效
标题翻译：激光二极管，光盘设备和光学拾取
公开(公告)号：US20100020838A1
公开(公告)日：2010-01-28
申请号：US12502564
申请日：2009-07-14
申请人： Makoto Oota , Hiroyuki Yokoyama , Masaru Kuramoto , Masao Ikeda
发明人： Makoto Oota , Hiroyuki Yokoyama , Masaru Kuramoto , Masao Ikeda
IPC分类号： H01S5/00
CPC分类号： H01S5/0658 , H01S5/0425 , H01S5/0602 , H01S5/0652 , H01S5/1064 , H01S5/22 , H01S5/32341
摘要： A laser diode capable of performing self-pulsation operation, and capable of sufficiently reducing the coherence of laser light and stably obtaining low-noise laser light is provided. A laser diode includes: a laser chip including at least one laser stripe which extends in a resonator length direction between a first end surface and a second end surface opposed to each other, in which the laser stripe includes a gain region and a saturable absorption region in the resonator length direction, and the width of the laser stripe in the saturable absorption region is larger than the width of the laser stripe in the gain region.
摘要翻译：提供能够进行自脉动操作并且能够充分降低激光的相干性并稳定地获得低噪声激光的激光二极管。激光二极管包括：激光器芯片，其包括在彼此相对的第一端面和第二端面之间沿谐振器长度方向延伸的至少一个激光条纹，其中激光条纹包括增益区域和可饱和吸收区域在谐振器长度方向上，可饱和吸收区域中的激光条纹的宽度大于增益区域中激光条纹的宽度。

7. 发明授权

US08786941B2 Semiconductor optical amplifier 有权
标题翻译：半导体光放大器
公开(公告)号：US08786941B2
公开(公告)日：2014-07-22
申请号：US13166900
申请日：2011-06-23
申请人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
发明人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
IPC分类号： H01S5/00
CPC分类号： H01S5/1064 , H01S5/0425 , H01S5/0602 , H01S5/0657 , H01S5/16 , H01S5/22 , H01S5/32341 , H01S5/34333 , H01S5/50
摘要： A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.
摘要翻译：半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。层叠结构具有脊形条纹结构。当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

8. 发明申请

US20100246622A1 BI-SECTION SEMICONDUCTOR LASER DEVICE, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR DRIVING THE SAME 有权
标题翻译：双分半导体激光器件，其制造方法及其驱动方法
公开(公告)号：US20100246622A1
公开(公告)日：2010-09-30
申请号：US12726524
申请日：2010-03-18
申请人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
发明人： Hideki Watanabe , Takao Miyajima , Masao Ikeda , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
IPC分类号： H01S5/323 , H01L21/20 , H01L21/28
CPC分类号： H01S5/0625 , B82Y20/00 , H01S5/0425 , H01S5/0602 , H01S5/0658 , H01S5/14 , H01S5/22 , H01S5/3216 , H01S5/34333
摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.
摘要翻译：一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。

9. 发明授权

US08442079B2 Mode-locked semiconductor laser device and driving method thereof 有权
标题翻译：锁模半导体激光器件及其驱动方法
公开(公告)号：US08442079B2
公开(公告)日：2013-05-14
申请号：US13035540
申请日：2011-02-25
申请人： Tomoyuki Oki , Masaru Kuramoto , Masao Ikeda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama
发明人： Tomoyuki Oki , Masaru Kuramoto , Masao Ikeda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama
IPC分类号： H01S3/098
摘要： Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.
摘要翻译：提供了一种锁模半导体激光器件的驱动方法，其包括层叠结构，其中第一化合物半导体层，具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压，第二电极和第一电极。层叠结构形成在具有极性的化合物半导体基板上，第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。阱层的深度为1nm以上且10nm以下。势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。通过将电流从第二电极通过层压结构传递到第一电极，在发射区域中产生光脉冲。

10. 发明申请

US20120002271A1 SEMICONDUCTOR OPTICAL AMPLIFIER 有权
标题翻译：半导体光放大器
公开(公告)号：US20120002271A1
公开(公告)日：2012-01-05
申请号：US13166900
申请日：2011-06-23
申请人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
发明人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
IPC分类号： H01S3/00
CPC分类号： H01S5/1064 , H01S5/0425 , H01S5/0602 , H01S5/0657 , H01S5/16 , H01S5/22 , H01S5/32341 , H01S5/34333 , H01S5/50
摘要： A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.
摘要翻译：半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。层叠结构具有脊形条纹结构。当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

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