专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US4378417A Electrophotographic member with .alpha.-Si layers 失效
标题翻译：具有α-Si层的电子照相元件
公开(公告)号：US4378417A
公开(公告)日：1983-03-29
申请号：US254294
申请日：1981-04-15
申请人： Eiichi Maruyama , Sachio Ishioka , Yoshinori Imamura , Hirokazu Matsubara , Yasuharu Shimomoto , Shinkichi Horigome , Yoshio Taniguchi
发明人： Eiichi Maruyama , Sachio Ishioka , Yoshinori Imamura , Hirokazu Matsubara , Yasuharu Shimomoto , Shinkichi Horigome , Yoshio Taniguchi
IPC分类号： G03G5/08 , G03G5/082 , H01L21/205 , H01L31/08
CPC分类号： G03G5/08235 , G03G5/08221
摘要： In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.
摘要翻译：在采用非晶硅光电导层的电子照相构件中，从非晶硅层的表面（或界面）向内至少10nm厚的非晶硅层的部分由非晶硅制成，该非晶硅具有光学禁带隙至少1.6eV，电阻率至少为1010欧米加。电子照相成像显示出令人满意的分辨率和良好的暗衰变特性。此外，具有窄于形成表面（或界面）区域的非晶硅的光学禁止带隙的区域设置在至少10nm的厚度的非晶硅层内，由此将电子照相构件的灵敏度设置为可以增加更长波长的光。

32. 发明授权

US4314014A Electrophotographic plate and process for preparation thereof 失效
标题翻译：电子照相板及其制备方法
公开(公告)号：US4314014A
公开(公告)日：1982-02-02
申请号：US158369
申请日：1980-06-11
申请人： Hideaki Yamamoto , Akio Taniguchi , Shinkichi Horigome , Susumu Saito , Yoshiaki Mori , Eiichi Maruyama
发明人： Hideaki Yamamoto , Akio Taniguchi , Shinkichi Horigome , Susumu Saito , Yoshiaki Mori , Eiichi Maruyama
IPC分类号： G03G5/043 , G03G5/08 , G03G5/082
CPC分类号： G03G5/0436 , G03G5/0433
摘要： Disclosed is an electrophotographic plate having a laminated structure comprising a first Se layer containing 3 to 10% by weight of As, a second Se layer containing 40 to 47% by weight of Te and 3 to 10% by weight of As and a fourth Se layer consisting solely of Se or comprising Se and up to 10% by weight of As or an organic semiconductor layer, wherein a substrate is arranged so that at least the face of the substrate which is contiguous to the face of one of said first Se layer and said fourth Se layer or organic semiconductor layer, that is located on the outer side of the laminated structure, is electrically conductive.It is preferred that the fourth Se layer be formed by vacuum evaporation deposition while maintaining the substrate temperature at 50.degree. to 80.degree. C. The residual potential of the electrophotographic plate can be reduced.
摘要翻译：公开了一种具有叠层结构的电子照相板，其包括含有3至10重量％的As的第一Se层，包含40至47重量％的Te和3至10重量％的As的第二Se层和第四Se 由Se组成或包含Se和至多10重量％的As或有机半导体层的层，其中衬底被布置成使得至少衬底的与所述第一Se层之一的表面相邻的面并且位于层叠结构的外侧的所述第四Se层或有机半导体层是导电的。优选地，通过真空蒸发沉积形成第四Se层，同时将衬底温度保持在50℃至80℃。可以减小电子照相板的残留电位。

33. 发明授权

US4307372A Photosensor 失效
标题翻译：光电传感器
公开(公告)号：US4307372A
公开(公告)日：1981-12-22
申请号：US108783
申请日：1979-12-31
申请人： Makoto Matsui , Hideaki Yamamoto , Eiichi Maruyama
发明人： Makoto Matsui , Hideaki Yamamoto , Eiichi Maruyama
IPC分类号： H01L27/146 , H01L31/09 , H01L31/08
CPC分类号： H01L31/09 , H01L27/14665
摘要： In a thin-film photosensor comprising a transparent electrode deposited on one surface of a thin layer of photoconductor, and a counter electrode deposited on the other surface thereof, a photosensor for use in a photosensor array of a facsimile transmitter or the like characterized in that part of the transparent electrode other than a window for incidence of a light signal is covered with an opaque thin film.
摘要翻译：在包括沉积在光电导体的薄层的一个表面上的透明电极和沉积在其另一表面上的对电极的薄膜光电传感器中，用于传真发射器等的光电传感器阵列中的光电传感器，其特征在于，除了用于入射光信号的窗口以外的透明电极的一部分被不透明薄膜覆盖。

34. 发明授权

US4307319A Semiconductor layer of oxygen depletion type cerium oxide or lead oxide 失效
标题翻译：半导体层的氧耗尽型氧化铈或氧化铅
公开(公告)号：US4307319A
公开(公告)日：1981-12-22
申请号：US921948
申请日：1978-07-05
申请人： Motoyasu Terao , Tadaaki Hirai , Eiichi Maruyama , Hideaki Yamamoto , Tsutomu Fujita , Naohiro Goto , Keiichi Shidara
发明人： Motoyasu Terao , Tadaaki Hirai , Eiichi Maruyama , Hideaki Yamamoto , Tsutomu Fujita , Naohiro Goto , Keiichi Shidara
IPC分类号： H01J29/45 , H01L31/08
CPC分类号： H01J29/451
摘要： A photoelectric device comprises a signal electrode, a layer of amorphous photoconductor containing 50 atomic percent or more of selenium and an N-type semiconductor layer made of a material selected from the group consisting of oxygen depletion type cerium oxide and oxygen depletion type lead oxide and disposed therebetween, which has a thickness greater than 8 nm and up to and including 500 nm and a Fermi level located within an energy range of 0.2 to 0.8 eV from the bottom of a conduction band.
摘要翻译：光电装置包括信号电极，含有50原子％以上的硒的非晶质感光体层和由选自氧耗尽型氧化铈和氧耗尽型氧化铅的材料制成的N型半导体层，以及其间具有大于8nm的厚度并且包括500nm的厚度以及从导带的底部位于0.2至0.8eV的能量范围内的费米能级。

35. 发明授权

US4233506A Photo-sensor 失效
标题翻译：光传感器
公开(公告)号：US4233506A
公开(公告)日：1980-11-11
申请号：US903161
申请日：1978-05-05
申请人： Hideaki Yamamoto , Makoto Matsui , Toshihisa Tsukada , Yoshizumi Eto , Tadaaki Hirai , Eiichi Maruyama
发明人： Hideaki Yamamoto , Makoto Matsui , Toshihisa Tsukada , Yoshizumi Eto , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： G02B6/42 , G02B27/00 , G02B27/02 , G06K9/20 , H01L27/144 , H04N1/028 , H04N1/031 , G02B5/14
CPC分类号： H04N1/0312 , G02B6/421 , G02B6/4249 , G06K9/2009 , H01L27/1446 , H04N1/0311 , H04N1/0315
摘要： A pboto-sensor wherein a bundle of optical fibers is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate and being formed to be flat, an array of photosensitive elements which have photosensitive parts on an open end face of the optical fibers at the first surface of the substrate is disposed integrally with the substrate, and an end face of the optical fibers at the second surface of the substrate serves as an information reading surface.
摘要翻译：一种光束传感器，其中一束光纤被布置在预定的衬底内，光纤束从衬底的第一表面延伸到第二表面并且被形成为平坦的，具有光敏部件的光敏元件阵列在基板的第一表面处的光纤的开口端面与基板一体地设置，并且在基板的第二表面处的光纤的端面用作信息读取表面。

36. 发明授权

US4121537A Apparatus for vacuum deposition 失效
标题翻译：真空沉积设备
公开(公告)号：US4121537A
公开(公告)日：1978-10-24
申请号：US779795
申请日：1977-03-21
申请人： Eiichi Maruyama , Tadaaki Hirai , Sachio Ishioka , Hideaki Yamamoto , Kiyohisa Inao
发明人： Eiichi Maruyama , Tadaaki Hirai , Sachio Ishioka , Hideaki Yamamoto , Kiyohisa Inao
IPC分类号： C23C14/54 , B05C11/00 , C23C13/08
CPC分类号： C23C14/546
摘要： An apparatus for vacuum deposition comprising a turn-table for holding substrates for deposition, and a plurality of evaporation boats arranged in opposition to a circumferential part of the turn-table, the turn-table being rotated at deposition whereby vapors from the respective boats can be cyclically accumulated and stuck onto the substrates, further comprises at least one film-thickness monitor which is fixed to the turn-table and which detects the quantity of a deposited substance of one layer stuck every time the substrates pass over each boat, and means to receive a signal from the film-thickness monitor and divide the signal time sequentially, thereby detecting at least one of the deposition rate and the total amount of the vapor from each boat, and to control the quantity of the vapor arriving to the substrates for deposition from each boat while comparing the detected value with a predetermined value.
摘要翻译：一种用于真空沉积的装置，包括用于保持用于沉积的基板的转台以及与转台的圆周部分相对布置的多个蒸发舟，所述转台在沉积下旋转，从而来自各个船的蒸气可以进一步包括至少一个薄膜厚度监测器，该膜厚监测器固定在转台上，每隔一个基板通过每个船只就检测一层沉积物质的量;以及装置接收来自薄膜厚度监视器的信号并依次划分信号时间，从而检测来自每个船的蒸气的沉积速率和总量中的至少一个，并且控制到达基板的蒸气的量在将检测值与预定值进行比较时，从每个船的沉积。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式