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    • 33. 发明授权
    • Positive resist composition, method of forming resist pattern, and polymeric compound
    • 正型抗蚀剂组合物,形成抗蚀剂图案的方法和聚合物
    • US08232041B2
    • 2012-07-31
    • US12694037
    • 2010-01-26
    • Takahiro DazaiTomoyuki HiranoTasuku MatsumiyaDaiju Shiono
    • Takahiro DazaiTomoyuki HiranoTasuku MatsumiyaDaiju Shiono
    • G03F7/039G03F7/20G03F7/30C08F28/06
    • C08F220/10C08F28/06G03F7/0397Y10S430/111
    • A polymeric compound (A1) includes a structural unit (a0-1) represented by general formula (a0-1), a structural unit (a0-2) represented by general formula (a0-2), and a structural unit (a1-0-1) represented by general formula (a1-0-1), wherein relative to the combined total of all the structural units, the proportion of the structural unit (a0-1) is from 10 to 40 mol %, the proportion of the structural unit (a0-2) is from 5 to 20 mol %, and the proportion of the structural unit (a1-0-1) is from 10 to 55 mol %. [In the formulas, each of R1 and R independently represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms, or a halogenated alkyl group of 1 to 5 carbon atoms, R2, A and B each represents a divalent linking group, R3 represents a cyclic group containing —SO2— within the ring skeleton thereof, and R4 and X1 each represents an acid-dissociable, dissolution-inhibiting group.]
    • 高分子化合物(A1)包括由通式(a0-1)表示的结构单元(a0-1),由通式(a0-2)表示的结构单元(a0-2)和结构单元(a1- 0-1),其中相对于所有结构单元的组合总和,结构单元(a0-1)的比例为10〜40摩尔%,比例为 结构单元(a0-2)为5〜20摩尔%,结构单元(a1-0-1)的比例为10〜55摩尔%。 [式中,R 1,R 2各自独立地表示氢原子,1〜5个碳原子的烷基或1〜5个碳原子的卤代烷基,R2,A,B各自表示二价连接基团, R3表示在其环骨架中含有-SO2-的环状基团,R4和X1各自表示酸解离的溶解抑制基团。