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31. 发明授权

US08636911B2 Process for MEMS scanning mirror with mass remove from mirror backside 有权
标题翻译：从镜面背面去除质量的MEMS扫描镜的工艺
公开(公告)号：US08636911B2
公开(公告)日：2014-01-28
申请号：US12924873
申请日：2010-10-07
申请人： Jun Chen , Guomin Mao , Tom Zhong , Wei Cao , Yee-Chung Fu , Chyu-Jiuh Torng
发明人： Jun Chen , Guomin Mao , Tom Zhong , Wei Cao , Yee-Chung Fu , Chyu-Jiuh Torng
IPC分类号： B81C1/00
CPC分类号： B81B3/0045 , B81B2201/042 , G02B26/0841
摘要： Two methods of fabricating a MEMS scanning mirror having a tunable resonance frequency are described. The resonance frequency of the mirror is set to a particular value by mass removal from the backside of the mirror during fabrication.
摘要翻译：描述制造具有可调共振频率的MEMS扫描反射镜的两种方法。反射镜的共振频率通过在制造期间从反射镜的背面质量去除而被设定为特定的值。

32. 发明申请

US20130302912A1 Method to Reduce Magnetic Film Stress for Better Yield 有权
标题翻译：减少磁膜应力以获得更好的产量的方法
公开(公告)号：US20130302912A1
公开(公告)日：2013-11-14
申请号：US13469258
申请日：2012-05-11
申请人： Tom Zhong , Kenlin Huang , Chyu-Jiuh Torng
发明人： Tom Zhong , Kenlin Huang , Chyu-Jiuh Torng
IPC分类号： H01L21/02
CPC分类号： H01L43/12 , H01L43/08
摘要： A method of forming a thin-film deposition, such as an MTJ (magnetic tunneling junction) layer, on a wafer-scale CMOS substrate so that the thin-film deposition is segmented by walls or trenches and not affected by thin-film stresses due to wafer warpage or other subsequent annealing processes. An interface layer is formed on the CMOS substrate and is patterned by either forming undercut trenches extending into its upper surface or by fabricating T-shaped walls that extend along its upper surface. The thin-film is deposited continuously over the patterned surface, whereupon either the trenches or walls segment the deposition and serve as stress-relief mechanisms to eliminate adverse effects of processing as stresses such as those caused by wafer warpage.
摘要翻译：在晶片级CMOS衬底上形成诸如MTJ（磁性隧道结）层的薄膜沉积的方法，使得薄膜沉积被壁或沟槽分段，并且不受薄膜应力的影响晶圆翘曲或其他后续退火工艺。在CMOS衬底上形成界面层，并且通过形成延伸到其上表面的底切沟槽或通过制造沿其上表面延伸的T形壁而被图案化。薄膜连续地沉积在图案化表面上，于是沟槽或壁分隔沉积物并用作应力消除机制，以消除作为诸如由晶片翘曲引起的应力的加工的不利影响。

33. 发明授权

US07863060B2 Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices 有权
标题翻译：双重图案化和蚀刻用于自旋转移转矩MRAM器件的磁性隧道结结构的方法
公开(公告)号：US07863060B2
公开(公告)日：2011-01-04
申请号：US12383298
申请日：2009-03-23
申请人： Rodolfo Belen , Tom Zhong , Witold Kula , Chyu-Jiuh Torng
发明人： Rodolfo Belen , Tom Zhong , Witold Kula , Chyu-Jiuh Torng
IPC分类号： H01L21/00
CPC分类号： H01L27/228 , H01L43/12
摘要： A method for forming a MTJ in a STT-MRAM is disclosed in which the easy-axis CD is determined independently of the hard-axis CD. One approach involves two photolithography steps each followed by two plasma etch steps to form a post in a hard mask which is transferred through a MTJ stack of layers. The hard mask has an upper Ta layer with a thickness of 300 to 400 Angstroms and a lower NiCr layer less than 50 Angstroms thick. The upper Ta layer is etched with a fluorocarbon etch while lower NiCr layer and underlying MTJ layers are etched with a CH3OH. Preferably, a photoresist mask layer is removed by oxygen plasma between the fluorocarbon and CH3OH plasma etches. A lower hard mask layer made of NiCr or the like is inserted to prevent formation and buildup of Ta etch residues that can cause device shunting.
摘要翻译：公开了一种用于在STT-MRAM中形成MTJ的方法，其中容易轴CD独立于硬轴CD来确定。一种方法涉及两个光刻步骤，每个步骤分别采用两个等离子体蚀刻步骤，以在通过MTJ堆叠层传送的硬掩模中形成柱。硬掩模具有厚度为300至400埃的上层Ta层和小于50埃厚的较低NiCr层。用氟碳蚀刻蚀刻上层Ta层，同时用CH3OH蚀刻下层NiCr层和下层MTJ层。优选地，在碳氟化合物和CH 3 OH等离子蚀刻之间的氧等离子体去除光致抗蚀剂掩模层。插入由NiCr等制成的下部硬掩模层以防止可能导致器件分流的Ta蚀刻残留物的形成和积累。

34. 发明申请

US20100240151A1 Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices 有权
标题翻译：双重图案化和蚀刻用于自旋转移转矩MRAM器件的磁性隧道结结构的方法
公开(公告)号：US20100240151A1
公开(公告)日：2010-09-23
申请号：US12383298
申请日：2009-03-23
申请人： Rodolfo Belen , Tom Zhong , Witold Kula , Chyu-Jiuh Torng
发明人： Rodolfo Belen , Tom Zhong , Witold Kula , Chyu-Jiuh Torng
IPC分类号： H01L21/04
CPC分类号： H01L27/228 , H01L43/12
摘要： A method for forming a MTJ in a STT-MRAM is disclosed in which the easy-axis CD is determined independently of the hard-axis CD. One approach involves two photolithography steps each followed by two plasma etch steps to form a post in a hard mask which is transferred through a MTJ stack of layers. The hard mask has an upper Ta layer with a thickness of 300 to 400 Angstroms and a lower NiCr layer less than 50 Angstroms thick. The upper Ta layer is etched with a fluorocarbon etch while lower NiCr layer and underlying MTJ layers are etched with a CH3OH. Preferably, a photoresist mask layer is removed by oxygen plasma between the fluorocarbon and CH3OH plasma etches. A lower hard mask layer made of NiCr or the like is inserted to prevent formation and buildup of Ta etch residues that can cause device shunting.
摘要翻译：公开了一种用于在STT-MRAM中形成MTJ的方法，其中容易轴CD独立于硬轴CD来确定。一种方法涉及两个光刻步骤，每个步骤分别采用两个等离子体蚀刻步骤，以在通过MTJ堆叠层传送的硬掩模中形成柱。硬掩模具有厚度为300至400埃的上层Ta层和小于50埃厚的较低NiCr层。用氟碳蚀刻蚀刻上层Ta层，同时用CH3OH蚀刻下层NiCr层和下层MTJ层。优选地，在碳氟化合物和CH 3 OH等离子蚀刻之间的氧等离子体去除光致抗蚀剂掩模层。插入由NiCr等制成的下部硬掩模层以防止可能导致器件分流的Ta蚀刻残留物的形成和积累。

35. 发明授权

US07122386B1 Method of fabricating contact pad for magnetic random access memory 有权
标题翻译：制造磁性随机存取存储器接触焊盘的方法
公开(公告)号：US07122386B1
公开(公告)日：2006-10-17
申请号：US11231674
申请日：2005-09-21
申请人： Chyu-Jiuh Torng , Tom Zhong , Wei Cao , Po-Kang Wang
发明人： Chyu-Jiuh Torng , Tom Zhong , Wei Cao , Po-Kang Wang
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , H01L27/222
摘要： A method of forming a Cu—Cu junction between a word line pad (WLP) and bit line (BL) contact is described. An opening above a WL contact is formed in a first SiNx layer on a substrate that includes a WLP and word line. After a bottom electrode (BE) layer, MTJ stack, and hard mask are sequentially deposited, an etch forms an MTJ element above the word line. Another etch forms a BE and exposes the first SiNx layer above the WLP and bond pad (BP). An MTJ ILD layer is deposited and planarized followed by deposition of a second SiNx layer and BL ILD layer. Trenches are formed in the BL ILD layer and second SiNx layer above the WLP, hard mask and BP. After vias are formed in the MTJ ILD and first SiNx layers above the WLP and BP, Cu deposition follows to form dual damascene BL contacts.
摘要翻译：描述了在字线焊盘（WLP）和位线（BL）触点之间形成Cu-Cu结的方法。在包括WLP和字线的衬底上的第一SiN x层中形成WL触点上方的开口。在底电极（BE）层，MTJ叠层和硬掩模之后，顺序沉积，蚀刻在字线之上形成MTJ元件。另一蚀刻形成BE，并使WLP和接合焊盘（BP）上方的第一SiN x层暴露。沉积MTJ ILD层并平坦化，随后沉积第二SiN x层和BL ILD层。沟槽形成在WLP，硬掩模和BP之上的BL ILD层和第二SiN x x层中。在WLP和BP上方的MTJ ILD和第一SiN x x层中形成通孔之后，随后进行Cu沉积以形成双镶嵌BL触点。

36. 发明授权

US08372661B2 High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same 有权
标题翻译：用于常规MRAM和STT-RAM的高性能MTJ元件及其制造方法
公开(公告)号：US08372661B2
公开(公告)日：2013-02-12
申请号：US11981127
申请日：2007-10-31
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L21/00
CPC分类号： H01L43/10 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous CO40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.
摘要翻译：公开了使自旋转移磁化开关电流（Jc）最小化的STT-RAM MTJ。 MTJ具有形成有自然氧化工艺的MgO隧道阻挡层，以实现低的RA（10欧姆 - um2）和不含CoFeB自由层的较低的固有阻尼常数的Fe或Fe / CoFeB / Fe自由层。当在360℃退火的MRAM MTJ堆叠中形成具有MgO隧道势垒（自由基氧化法）和CoFeB AP1钉扎层的Fe，FeB或Fe / CoFeB / Fe自由层时，提供高dR / R（TMR ）> 100％，TMR / Rp_cov = 20时读取余量大幅度提高。 100 nm×200 nm椭圆STT-RAM MTJ的高速测量显示，用于切换无Fe层的Jc0是用于切换无定形CO40Fe40B20自由层的一半。 Fe / CoFeB / Fe自由层配置允许为STT-RAM应用增加Hc值。

37. 发明授权

US08133439B2 GMR biosensor with enhanced sensitivity 有权
标题翻译： GMR生物传感器具有增强的灵敏度
公开(公告)号：US08133439B2
公开(公告)日：2012-03-13
申请号：US11497162
申请日：2006-08-01
申请人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
发明人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
IPC分类号： G01N15/06
CPC分类号： G01R33/0052 , B82Y25/00 , G01N15/0656 , G01N27/745 , G01N2015/0065 , G01R33/05 , G01R33/093 , G01R33/098 , Y10T29/49124 , Y10T29/49986
摘要： A sensor array comprising a series connection of parallel GMR sensor stripes provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor free layer is eliminated by a combination of biasing the sensor along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.
摘要翻译：包括并联GMR传感器条的串联连接的传感器阵列提供了用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。通过将传感器沿着其纵向方向而不是通常的横向偏置并通过使用传感器的外涂层应力和磁致伸缩的组合来消除滞后对维持传感器自由层的磁矩的稳定偏置点的不利影响磁性层产生补偿横向磁各向异性。通过使条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，传感器阵列的灵敏度增强。

38. 发明授权

US07918014B2 Method of manufacturing a CPP structure with enhanced GMR ratio 有权
标题翻译：制造具有增强的GMR比的CPP结构的方法
公开(公告)号：US07918014B2
公开(公告)日：2011-04-05
申请号：US11180808
申请日：2005-07-13
申请人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
发明人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
IPC分类号： G11B5/187 , C23C14/34
CPC分类号： H01L43/08 , B82Y40/00 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/18 , H01F41/303 , H01L43/10 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1129 , Y10T428/115
摘要： A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies from 85 to 100 atomic % to maintain low Hc and λS values. A small positive magnetostriction value in a Co75Fe25 layer is used to offset a negative magnetostriction value in a Ni90Fe10 layer. The CoFe layer is deposited on a sensor stack in which a seed layer, AFM layer, pinned layer, and non-magnetic spacer layer are sequentially formed on a substrate. After a NiFe layer and capping layer are sequentially deposited on the CoFe layer, the sensor stack is patterned to give a sensor element with top and bottom surfaces and a sidewall connecting the top and bottom surfaces. Thereafter, a dielectric layer is formed adjacent to the sidewalls.
摘要翻译：公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀，其中CoFe层的Fe含量为20〜70原子％，NiFe层的Ni含量为85〜100原子％，保持低Hc， λS值。使用Co75Fe25层中的小的正磁致伸缩值来抵消Ni90Fe10层中的负磁致伸缩值。 CoFe层沉积在传感器堆叠上，其中种子层，AFM层，钉扎层和非磁性间隔层依次形成在基底上。在NiFe层和覆盖层顺序地沉积在CoFe层上之后，传感器堆叠被图案化以给出具有顶表面和底表面的传感器元件以及连接顶表面和底表面的侧壁。此后，与侧壁相邻地形成电介质层。

39. 发明申请

US20100258889A1 High performance MTJ elements for STT-RAM and method for making the same 有权
标题翻译：用于STT-RAM的高性能MTJ元件和制作相同的方法
公开(公告)号：US20100258889A1
公开(公告)日：2010-10-14
申请号：US12803191
申请日：2010-06-21
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： An STT-MTJ MRAM cell utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The cell includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a composite tri-layer free layer that comprises an amorphous layer of Co60Fe20B20 of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
摘要翻译： STT-MTJ MRAM单元利用自旋角动量的传递作为改变自由层的磁矩方向的机构。电池包括形成在被钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，复合三层自由层其包括分别在3和6埃厚度的Fe的两个结晶层之间形成的约20埃厚度的Co60Fe20B20的非晶层。自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

40. 发明申请

US20100172053A1 Novel hard bias design for extra high density recording 有权
标题翻译：用于超高密度记录的新型硬偏置设计
公开(公告)号：US20100172053A1
公开(公告)日：2010-07-08
申请号：US12660908
申请日：2010-03-05
申请人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
发明人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
IPC分类号： G11B5/187 , B05D1/36
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
摘要翻译：用于偏置读取头内的MR元件中的自由层的硬偏置结构由具有Co78.6Cr5.2Pt16.2 / Co65Cr15Pt20配置的复合硬偏置层组成。 Co65Cr15Pt20上层具有较大的Hc值，厚度约为Co78.6Cr5.2Pt16.2层的2〜10倍。硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。可选地，Co78.6Cr5.2Pt16.2层的厚度为零，Co65Cr15Pt20层形成在BCC底层上。本发明还包括层压硬偏置结构。可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

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