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1. 发明申请

US20120085728A1 Novel process for MEMS scanning mirror with mass remove from mirror backside 有权
标题翻译： MEMS扫描镜的新工艺，从镜面背面去除质量
公开(公告)号：US20120085728A1
公开(公告)日：2012-04-12
申请号：US12924873
申请日：2010-10-07
申请人： Jun Chen , Guomin Mao , Tom Zhong , Wei Cao , Yee-Chung Fu , Chyu-Jiuh Torng
发明人： Jun Chen , Guomin Mao , Tom Zhong , Wei Cao , Yee-Chung Fu , Chyu-Jiuh Torng
IPC分类号： B81C1/00
CPC分类号： B81B3/0045 , B81B2201/042 , G02B26/0841
摘要： Two methods of fabricating a MEMS scanning mirror having a tunable resonance frequency are described. The resonance frequency of the mirror is set to a particular value by mass removal from the backside of the mirror during fabrication.
摘要翻译：描述制造具有可调共振频率的MEMS扫描反射镜的两种方法。反射镜的共振频率通过在制造期间从反射镜的背面质量去除而被设定为特定的值。

2. 发明授权

US08636911B2 Process for MEMS scanning mirror with mass remove from mirror backside 有权
标题翻译：从镜面背面去除质量的MEMS扫描镜的工艺
公开(公告)号：US08636911B2
公开(公告)日：2014-01-28
申请号：US12924873
申请日：2010-10-07
申请人： Jun Chen , Guomin Mao , Tom Zhong , Wei Cao , Yee-Chung Fu , Chyu-Jiuh Torng
发明人： Jun Chen , Guomin Mao , Tom Zhong , Wei Cao , Yee-Chung Fu , Chyu-Jiuh Torng
IPC分类号： B81C1/00
CPC分类号： B81B3/0045 , B81B2201/042 , G02B26/0841
摘要： Two methods of fabricating a MEMS scanning mirror having a tunable resonance frequency are described. The resonance frequency of the mirror is set to a particular value by mass removal from the backside of the mirror during fabrication.
摘要翻译：描述制造具有可调共振频率的MEMS扫描反射镜的两种方法。反射镜的共振频率通过在制造期间从反射镜的背面质量去除而被设定为特定的值。

3. 外观设计

USD1019259S1 Bottle cap 有权
公开(公告)号：USD1019259S1
公开(公告)日：2024-03-26
申请号：US29911297
申请日：2023-08-31
申请人： Jun Chen
设计人： Jun Chen
摘要： FIG. 1 is a top perspective view of a bottle cap, showing my new design;
FIG. 2 is a bottom perspective view thereof;
FIG. 3 is a front view thereof;
FIG. 4 is a rear view thereof;
FIG. 5 is a left side view thereof;
FIG. 6 is a right side view thereof;
FIG. 7 is a top view thereof; and,
FIG. 8 is a bottom view thereof.
The dashed broken lines depict portions of the bottle cap that form no part of the claim design.

4. 发明授权

US11569440B2 Making a memoristic array with an implanted hard mask 有权
公开(公告)号：US11569440B2
公开(公告)日：2023-01-31
申请号：US15412076
申请日：2017-01-23
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H01L43/12 , H01L27/24 , H01L45/00 , H01L27/22
摘要： The invention disclosed a method to make an implanted hard mask with ultra-small dimensions for fabricating integrated nonvolatile random access memory. Instead of directly depositing hard mask material on top of the memory film stack element, we first make ultra-small VIA holes on a pattern transfer molding (PTM) layer using a reverse memory mask, then fill in the hard mask material into the VIA holes within the PTM material. Ultra-small hard mask pillars are formed after removing the PTM material. To improve the adhesion of the hard mask pillars with the underneath memory stack element, a hard mask sustaining element (HMSE) is added below PTM. Due to a better materials adhesion between HMSE and the hard mask, a stronger hard mask array can be formed.

5. 发明申请

US20210343934A1 COMPOSITE MULTI-STACK SEED LAYER TO IMPROVE PMA FOR PERPENDICULAR MAGNETIC PINNING 有权
公开(公告)号：US20210343934A1
公开(公告)日：2021-11-04
申请号：US16865810
申请日：2020-05-04
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H01L43/10 , H01L43/08 , H01F10/30 , H01F10/32 , H01F10/12
摘要： The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

6. 发明申请

US20210327960A1 BOTTOM-PINNED MAGNETIC RANDOM ACCESS MEMORY HAVING A COMPOSITE SOT STRUCTURE 有权
公开(公告)号：US20210327960A1
公开(公告)日：2021-10-21
申请号：US16849571
申请日：2020-04-15
申请人： RONGFU XIAO , Yimin Guo , Jun Chen
发明人： RONGFU XIAO , Yimin Guo , Jun Chen
IPC分类号： H01L27/22 , H01L43/08 , H01L43/12 , H01L43/02 , G11C11/16
摘要： An ultra-fast magnetic random access memory (MRAM) comprises a three terminal bottom-pinned composite SOT magnetic tunneling junction (bCSOT-MTJ) element including (counting from top to bottom) a magnetic flux guide (MFG) having a very high magnetic permeability, a spin Hall channel (SHC) having a large positive spin Hall angle, an in-plane magnetic memory (MM) layer, a tunnel barrier (TB) layer, and a magnetic pinning stack (MPS) having a synthetic antiparallel coupling pinned by an antiferromagnetic material. The magnetic writing is significantly boosted by a combined effort of enhanced spin orbit torque (SOT) and Lorentz force generated by current-flowing wire (CFW) in the SHC layer and spin transfer torque (STT) by a current flowing through the MTJ stack, and further enhanced by a magnetic close loop formed at the cross section of MFG/SHC/MM tri-layer. Such bCSOT-MTJ element will have a very fast (down to picoseconds) switching speed and consume much less power suitable level 1 or 2 cache application for SMRAM, CPU, GPU and TPU.

7. 发明授权

US11081154B1 Synthetic magnetic pinning element having strong antiferromagnetic coupling 有权
公开(公告)号：US11081154B1
公开(公告)日：2021-08-03
申请号：US16773283
申请日：2020-01-27
申请人： Rongfu Xiao , Yimin Guo , Jun Chen
发明人： Rongfu Xiao , Yimin Guo , Jun Chen
IPC分类号： G11C11/16 , H01L27/22 , H01L43/10 , H01L43/08 , H01L43/02
摘要： The present invention discloses an enhanced synthetic antiferromagnetic (eSAF) element with a very strong RKKY coupling comprising a magnetic pinning layer having a face-center-cubic (fcc) crystalline structure and a magnetic reference layer having a body-center-cubic (bcc) crystalline structure which are antiferromagnetically coupled by a composite non-magnetic spacer (CnmS) containing a bi-layer of (Ru, Rh or Ir)/Cr or tri-layer of (Ru, Rh, or Ir)/(W, Mo, or V)/Cr. With such eSAF, a strong magnetic pinning element is formed which can be used to make various thin STT-MRAM film stacks with good thermal and magnetic stability while maintaining high TMR value.

8. 发明授权

US09750426B2 System and method for assessing response to chemotherapy using magnetic resonance elastography 有权
公开(公告)号：US09750426B2
公开(公告)日：2017-09-05
申请号：US13301300
申请日：2011-11-21
申请人： Kiaran P McGee , Richard L Ehman , Stephen M Ansell , Yogesh K Mariappan , Jun Chen
发明人： Kiaran P McGee , Richard L Ehman , Stephen M Ansell , Yogesh K Mariappan , Jun Chen
IPC分类号： A61B5/055 , A61B5/00
CPC分类号： A61B5/055 , A61B5/0051
摘要： A system and method for determining a response of a tumor following a chemotherapy process includes the use of a magnetic resonance elastography (MRE) driver and a magnetic resonance imaging (MRI) system. The method includes controlling the MRE driver and the MRI system to acquire raw MRE data from the tumor, inverting the raw MRE data to produce an elastogram of the tumor, and determining a response of the tumor to the chemotherapy process from the elastogram.

9. 发明授权

US09262035B1 Display for embedded intelligence 有权
标题翻译：显示嵌入式智能
公开(公告)号：US09262035B1
公开(公告)日：2016-02-16
申请号：US13443200
申请日：2012-04-10
申请人： Paul Gustafson , Hob Anthony Spillane , Jun Chen , Khurram Mahmood
发明人： Paul Gustafson , Hob Anthony Spillane , Jun Chen , Khurram Mahmood
IPC分类号： G06F3/048 , G06F17/25
CPC分类号： G06F3/048 , G06F9/44 , G06F9/451 , G06F17/30572 , G06Q30/02
摘要： A system for displaying an embedded intelligence applet comprises a processor and a memory. The processor is configured to provide display information to display in the embedded intelligence applet window and to provide an indication to display the embedded intelligence applet window in an opaque mode. The processor is configured to determine whether an indication to activate a window other than the embedded intelligence applet window is received. The processor is configured to provide an indication to display the embedded intelligence applet window in a partially transparent mode in the event that an indication to activate a window other than the embedded intelligence applet window is received. The memory is coupled to the processor and is configured to provide the processor with instructions.
摘要翻译：用于显示嵌入式智能小应用程序的系统包括处理器和存储器。处理器被配置为提供显示信息以在嵌入式智能小应用程序窗口中显示并且提供以不透明模式显示嵌入式智能小应用程序窗口的指示。处理器被配置为确定是否接收到激活除嵌入式智能小程序窗口之外的窗口的指示。处理器被配置为在接收到激活不同于嵌入式智能小应用程序窗口的窗口的指示的情况下，提供在部分透明模式下显示嵌入式智能小应用程序窗口的指示。存储器耦合到处理器并且被配置为向处理器提供指令。

10. 发明申请

US20160040648A1 System for Harvesting Water Wave Energy 有权
标题翻译：水波能量收获系统
公开(公告)号：US20160040648A1
公开(公告)日：2016-02-11
申请号：US14819142
申请日：2015-08-05
申请人： Zhong Lin Wang , Yanjie Su , Guang Zhu , Jun Chen
发明人： Zhong Lin Wang , Yanjie Su , Guang Zhu , Jun Chen
IPC分类号： F03B13/18 , F03B13/10
CPC分类号： F03B13/14 , F03B13/20 , F05B2220/709 , F05B2280/40 , F05B2280/4005 , F05B2280/5011 , H02H1/04 , Y02E10/38
摘要： A generator for harvesting energy from water in motion includes a sheet of a hydrophobic material, having a first side and an opposite second side, that is triboelectrically more negative than water. A first electrode sheet is disposed on the second side of the sheet of a hydrophobic material. A second electrode sheet is disposed on the second side of the sheet of a hydrophobic material and is spaced apart from the first electrode sheet. Movement of the water across the first side induces an electrical potential imbalance between the first electrode sheet and the second electrode sheet.
摘要翻译：用于从运动中的水中收集能量的发生器包括具有第一侧和相对的第二侧的疏水材料片，其比水更摩擦地更负。第一电极片设置在疏水材料片的第二面上。第二电极片设置在疏水材料的片材的第二侧上并与第一电极片间隔开。水的移动通过第一侧引起第一电极片和第二电极片之间的电势不平衡。

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