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31. 发明申请

US20050258734A1 Electron-emitting device, electron-emitting apparatus, electron source, image display device and information display/reproduction apparatus 失效
标题翻译：电子发射装置，电子发射装置，电子源，图像显示装置和信息显示/再现装置
公开(公告)号：US20050258734A1
公开(公告)日：2005-11-24
申请号：US11131195
申请日：2005-05-18
申请人： Koki Nukanobu , Keisuke Yamamoto , Tamaki Kobayashi , Takuto Moriguchi
发明人： Koki Nukanobu , Keisuke Yamamoto , Tamaki Kobayashi , Takuto Moriguchi
IPC分类号： H01J1/30 , H01J1/316 , H01J29/04 , H01J31/12
CPC分类号： H01J1/316
摘要： By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.
摘要翻译：通过在第一导电膜和第二导电膜之间施加驱动电压Vf [V]，当电子被第一导电膜发射时，0.5Vf [V]的等电位线朝向第一导电膜倾斜，而不是朝向第二导电膜在第一导电膜的电子发射部分附近，横跨电子发射部分的横截面和位于最靠近电子发射部分的第二导电膜的部分。本发明提高电子发射效率。

32. 发明申请

US20050194912A1 Method of driving electron-emitting device, electron source, and image-forming apparatus 失效
标题翻译：电子发射器件，电子源和图像形成装置的驱动方法
公开(公告)号：US20050194912A1
公开(公告)日：2005-09-08
申请号：US11057723
申请日：2005-02-15
申请人： Tamaki Kobayashi , Keisuke Yamamoto
发明人： Tamaki Kobayashi , Keisuke Yamamoto
IPC分类号： H01J9/42 , G09G3/10 , G09G3/20 , G09G3/22 , H01J9/02
CPC分类号： H01J29/863 , G09G3/22 , H01J31/127 , H01J2329/0489 , H01J2329/8615
摘要： Provided is a manufacturing method capable of manufacturing an electron-emitting device in which a variation in device current at the time of manufacturing is suppressed and thus uniformity thereof is high. The electron-emitting device includes a substrate, a first conductor, and a second conductor. The substrate is composed of: a member which contains silicon oxide as a main ingredient, Na2O, and K2O and in which a molar ratio of K2O to Na2O is 0.5 to 2.0; and a film which contains silicon oxide as a main component and is stacked on the member. The first conductor and the second conductor are located on the substrate. In a forming step and/or an activation step, a quiescent period (interval) of a pulse voltage applying repeatedly applied between the first conductor and the second conductor is set equal to or longer than 10 msec.
摘要翻译：提供了一种能够制造电子发射器件的制造方法，其中制造时的器件电流的变化被抑制并因此其均匀性高。电子发射器件包括衬底，第一导体和第二导体。基板由以下部分构成：以氧化硅为主要成分的成分，Na 2 O和K 2 O 2，其中K < 2 O 2至Na 2 O为0.5至2.0; 以及含有氧化硅作为主要成分并层叠在该部件上的膜。第一导体和第二导体位于基板上。在形成步骤和/或激活步骤中，重复施加在第一导体和第二导体之间的脉冲电压的静止周期（间隔）被设置为等于或大于10毫秒。

33. 发明授权

US06802753B1 METHOD FOR MANUFACTURING ELECTRON BEAM DEVICE, METHOD FOR MANUFACTURING IMAGE FORMING APPARATUS, ELECTRON BEAM DEVICE AND IMAGE FORMING APPARATUS MANUFACTURED THOSE MANUFACTURING METHODS, METHOD AND APPARATUS FOR MANUFACTURING ELECTRON SOURCE, AND APPARATUS FOR MANUFACTURING IMAGE FORMING APPARATUS 失效
标题翻译：用于制造电子束装置的方法，用于制造图像形成装置的方法，电子束装置和制造装置的图像形成装置的制造方法，用于制造电子源的方法和装置以及用于制造图像形成装置的装置
公开(公告)号：US06802753B1
公开(公告)日：2004-10-12
申请号：US09722454
申请日：2000-11-28
申请人： Yoichi Ando , Keisuke Yamamoto , Hideshi Kawasaki , Tamaki Kobayashi , Satoshi Mogi , Akira Hayama
发明人： Yoichi Ando , Keisuke Yamamoto , Hideshi Kawasaki , Tamaki Kobayashi , Satoshi Mogi , Akira Hayama
IPC分类号： H01J900
CPC分类号： H01J9/027 , H01J2209/0223
摘要： In a manufacturing process of an image forming apparatus (electron beam device) using electron emission elements, particularly, surface conduction type electron emission elements, wirings on an electron source substrate on which the wirings and element electrodes are formed are opposite to electrodes for a face plate, and a given voltage is applied between the wirings and the electrodes to thereby generate a discharge phenomenon in advance, thus removing a protrusion or the like. In this way, when an electric field applying process is conducted on the electron source substrate, a factor such as a protrusion in an electron source which induces a discharge phenomenon in driving an electron beam device represented by an image forming apparatus is removed, thus realizing an image forming apparatus excellent in display characteristic with no defective pixel even in image display for a long period of time.
摘要翻译：在使用电子发射元件，特别是表面传导型电子发射元件的图像形成装置（电子束装置）的制造方法中，形成有布线和元件电极的电子源基板上的布线与面对的电极相对并且在布线和电极之间施加给定的电压，从而预先产生放电现象，从而去除突起等。以这种方式，当在电子源基板上进行电场施加处理时，去除了在驱动由图像形成装置表示的电子束装置中引起放电现象的电子源中的突起等因素，从而实现即使在长时间的图像显示中，也不会出现缺陷像素的显示特性优异的图像形成装置。

34. 发明授权

US06475050B1 Manufacturing method of image-forming apparatus 失效
标题翻译：图像形成装置的制造方法
公开(公告)号：US06475050B1
公开(公告)日：2002-11-05
申请号：US09505628
申请日：2000-02-16
申请人： Satoshi Mogi , Keisuke Yamamoto , Tamaki Kobayashi
发明人： Satoshi Mogi , Keisuke Yamamoto , Tamaki Kobayashi
IPC分类号： H01J902
CPC分类号： H01J9/148 , H01J1/36 , H01J29/085 , H01J2329/00
摘要： When high luminance is obtained by increasing an anode voltage in an image-forming apparatus constructed by anode and cathode substrates, a surface discharge (flash over) is generated between anode electrodes at a generating time of an abnormal discharge and an anode is broken. Therefore, as shown in FIG. 3B, the electric potential of an anode electrode on an anode substrate (51) is set to a uniform electric potential V1 by a first power source (53). Thereafter, the first power source (53) is separated from the anode electrode. Subsequently, the electric potential of one of the anode electrodes arranged in proximity to each other through an insulating face is set to an electric potential V2 by a second power sourced (54) to apply a voltage to a cut-in portion (52) (see FIG. 3C). Thus, a voltage Vc equal to or greater than an electric potential difference Ve generated at the generating time of the abnormal discharge is applied to the cut-in portion (52). Thus, the generation of a surface discharge (flash over) in the anode substrate can be prevented at the generating time of the abnormal discharge.
摘要翻译：当通过增加由阳极和阴极基板构成的图像形成装置中的阳极电压获得高亮度时，在异常放电的产生时间和阳极断开之间在阳极之间产生表面放电（闪蒸）。因此，如图1所示。如图3B所示，通过第一电源（53）将阳极基板（51）上的阳极电极的电位设定为均匀的电位V1。此后，第一电源（53）与阳极电极分离。随后，通过绝缘面彼此靠近配置的阳极之一的电位被第二电源（54）设定为电位V2，以将电压施加到切入部（52）（参见图3C）。因此，在异常放电的产生时刻产生的等于或大于电位差Ve的电压Vc被施加到切入部分（52）。因此，能够防止在异常放电的产生时产生阳极基板中的表面放电（闪光）。

35. 发明授权

US06426596B1 Image forming apparatus 失效
标题翻译：图像形成装置
公开(公告)号：US06426596B1
公开(公告)日：2002-07-30
申请号：US09506602
申请日：2000-02-18
申请人： Keisuke Yamamoto , Tamaki Kobayashi , Satoshi Mogi
发明人： Keisuke Yamamoto , Tamaki Kobayashi , Satoshi Mogi
IPC分类号： G09G312
CPC分类号： H01J29/085 , H01J31/125
摘要： An image forming apparatus includes a cathode substrate on which an electron emitting device is disposed, and an anode substrate disposed opposite to the cathode substrate. The anode substrate includes an anode electrode including a plurality of conductive films connected in series and arranged to form gaps between neighboring films.
摘要翻译：图像形成装置包括其上设置有电子发射器件的阴极衬底和与阴极衬底相对设置的阳极衬底。阳极基板包括阳极电极，其包括串联连接并且布置成在相邻膜之间形成间隙的多个导电膜。

36. 发明申请

US20140264044A1 SCINTILLATOR MATERIAL AND RADIATION DETECTOR USING SAME 有权
标题翻译：使用相同的扫描仪材料和辐射探测器
公开(公告)号：US20140264044A1
公开(公告)日：2014-09-18
申请号：US14118512
申请日：2012-06-06
申请人： Tamaki Kobayashi , Ryoko Ueyama , Toru Den
发明人： Tamaki Kobayashi , Ryoko Ueyama , Toru Den
IPC分类号： G01T1/202 , C09K11/61 , G01T1/20
CPC分类号： G01T1/2023 , C04B35/5152 , C04B35/653 , C04B2235/32 , C04B2235/3201 , C04B2235/3281 , C04B2235/3286 , C09K11/616 , C09K11/625 , G01T1/2006
摘要： Improvement in luminescence intensity is demanded from a scintillator material. The present invention provides a new scintillator material by adding a specific element selected from thallium and indium to a material having a basic composition represented by an alkali element:copper:a halogen element=3:2:5.
摘要翻译：闪烁体材料需要改善发光强度。本发明通过将选自铊和铟的特定元素添加到具有由碱元素：铜：卤素元素= 3:2:5表示的碱性组成的材料中提供新的闪烁体材料。

37. 发明申请

US20100187095A1 MANUFACTURING METHOD OF A BORIDE FILM, AND MANUFACTURING METHOD OF AN ELECTRON-EMITTING DEVICE 审中-公开
标题翻译：硼化膜的制造方法和电子发射装置的制造方法
公开(公告)号：US20100187095A1
公开(公告)日：2010-07-29
申请号：US12691454
申请日：2010-01-21
申请人： Naofumi Aoki , Tomoyasu Mizuno , Tamaki Kobayashi , Yusuke Miyamoto
发明人： Naofumi Aoki , Tomoyasu Mizuno , Tamaki Kobayashi , Yusuke Miyamoto
IPC分类号： C23C14/46
CPC分类号： C23C14/225 , C23C14/067 , C23C14/35 , C23C14/54
摘要： A boride film is deposited on a substrate through an opening portion a shield member located between the substrate and a target by means of a sputtering method. The shield member is arranged so as to shield between an erosion region of the target and the substrate. A distribution of plasma density in a space between the substrate and the target is set in such a manner that a plasma density in a region in which the opening portion is located becomes higher than a plasma density in a region shielded by the shield member.
摘要翻译：通过溅射法将位于基板和靶之间的屏蔽部件的开口部分在基板上沉积硼化膜。屏蔽构件被布置成屏蔽目标的侵蚀区域和基板之间。在基板和靶之间的空间中的等离子体密度的分布被设定为使得开口部分所在的区域中的等离子体密度高于屏蔽部件屏蔽的区域中的等离子体密度。

38. 发明申请

US20100159783A1 METHOD FOR PRODUCING ELECTRON-EMITTING DEVICE AND METHOD FOR PRODUCING IMAGE DISPLAY APPARATUS INCLUDING THE SAME 失效
标题翻译：用于制造电子发射装置的方法和用于生产包括其的图像显示装置的方法
公开(公告)号：US20100159783A1
公开(公告)日：2010-06-24
申请号：US12637978
申请日：2009-12-15
申请人： Kyota Nozu , Kenichi Iwata , Tamaki Kobayashi , Shin Kitamura , Akira Shimazu
发明人： Kyota Nozu , Kenichi Iwata , Tamaki Kobayashi , Shin Kitamura , Akira Shimazu
IPC分类号： H01J9/00 , H01J9/12
CPC分类号： H01J9/025 , H01J1/3046 , H01J31/127 , H01J2201/30423 , H01J2329/0423
摘要： A method for producing an electron-emitting device includes forming a first conductive film on a side surface of an insulation layer including the side surface and a top surface connected to the side surface; forming a second conductive film from the top surface to the side surface and on the first conductive film; and etching the second electrically conductive film.
摘要翻译：一种电子发射器件的制造方法，包括在包括侧面的绝缘层和与侧面连接的顶面的侧面上形成第一导电膜; 从所述顶表面到所述侧表面和所述第一导电膜上形成第二导电膜; 并蚀刻第二导电膜。

39. 发明申请

US20100159781A1 METHOD OF MANUFACTURING ELECTRON-EMITTING DEVICE AND METHOD OF MANUFACTURING IMAGE DISPLAY APPARATUS 失效
标题翻译：制造电子发射装置的方法和制造图像显示装置的方法
公开(公告)号：US20100159781A1
公开(公告)日：2010-06-24
申请号：US12421780
申请日：2009-04-10
申请人： Yuu Nishimura , Tamaki Kobayashi , Yusuke Miyamoto , Takuto Moriguchi , Eiji Takeuchi , Takahiro Sato
发明人： Yuu Nishimura , Tamaki Kobayashi , Yusuke Miyamoto , Takuto Moriguchi , Eiji Takeuchi , Takahiro Sato
IPC分类号： H01J9/00 , H01J9/12
CPC分类号： H01J1/3046 , H01J9/025 , H01J31/127 , H01J2201/30423 , H01J2329/0423
摘要： An electron-emitting device manufacturing method includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film in a film thickness direction. At the first step, the conductive film is formed so that film density of the conductive film on the side surface of the insulating layer becomes the same as or higher than film density of the conductive film on the upper portion of the insulating film.
摘要翻译：一种电子发射器件制造方法包括：第一步骤，在绝缘层上形成导电膜，所述绝缘层具有通过角部连接到上表面的上表面和侧表面，以便从侧表面延伸到上表面; 覆盖角部的至少一部分，以及在膜厚度方向上蚀刻导电膜的第二工序。在第一步骤中，形成导电膜，使绝缘层侧面上的导电膜的膜密度与绝缘膜上部的导电膜的膜密度相同或更高。

40. 发明申请

US20100053126A1 ELECTRON EMISSION DEVICE AND IMAGE DISPLAY PANEL USING THE SAME, AND IMAGE DISPLAY APPARATUS AND INFORMATION DISPLAY APPARATUS 审中-公开
标题翻译：电子发射装置和使用其的图像显示面板，以及图像显示装置和信息显示装置
公开(公告)号：US20100053126A1
公开(公告)日：2010-03-04
申请号：US12549456
申请日：2009-08-28
申请人： Tamaki Kobayashi , Shoji Nishida , Takuto Moriguchi , Takeo Tsukamoto
发明人： Tamaki Kobayashi , Shoji Nishida , Takuto Moriguchi , Takeo Tsukamoto
IPC分类号： G09G5/00 , H01J1/02 , H01J1/62
CPC分类号： H01J1/30 , H01J1/304 , H01J1/316 , H01J31/127 , H01J2201/30426 , H01J2201/30492 , H01J2201/3165 , H01J2329/0426 , H01J2329/0471 , H01J2329/0489
摘要： An electron emission device includes a polycrystalline film of lanthanum boride, and a size of a crystallite which composes the polycrystalline film is equal to or more than 2.5 nm and equal to or less than 100 nm, preferably the film thickness of the polycrystalline film is equal to or less than 100 nm.
摘要翻译：电子发射装置包括硼化镧多晶膜，构成多晶膜的微晶尺寸等于或大于2.5nm且等于或小于100nm，优选多晶膜的膜厚度相等至或小于100nm。

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