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    • 38. 发明申请
    • METHOD FOR MAKING STATUS FUNCTION MATRIX AND METHOD FOR CONTROLLING CALL CONNECTION USING IT
    • 用于制作状态功能矩阵的方法和使用它来控制呼叫连接的方法
    • US20080133778A1
    • 2008-06-05
    • US11861972
    • 2007-09-26
    • Jeong- Ha KimKyung-Soo Kim
    • Jeong- Ha KimKyung-Soo Kim
    • G06F15/16
    • H04W76/10H04W88/08
    • The present invention relates to a call connection control method used by defining a state function matrix when a base station controls call connection of a terminal, and a method for generating the state function matrix. In a call connection process, a call state varies and an access point control subsystem receives messages from a terminal and an access point traffic subsystem. The access point control subsystem calls a state function corresponding to the received message and a current call state among a plurality of state functions that are respectively mapped to a plurality of elements of the state function matrix when receiving the message, and operates the state function. The state function matrix may include a plurality of call states as one index among row and column indexes, and a plurality of messages as the other index.
    • 本发明涉及一种当基站控制终端的呼叫连接时通过定义状态函数矩阵使用的呼叫连接控制方法,以及用于生成状态函数矩阵的方法。 在呼叫连接过程中,呼叫状态变化,接入点控制子系统从终端和接入点业务子系统接收消息。 接入点控制子系统在接收到消息时,分别对应于接收到的消息的状态函数和多个状态函数中的当前调用状态,分别映射到状态函数矩阵的多个元素,并且操作状态函数。 状态函数矩阵可以包括作为行索引和列索引之中的一个索引的多个调用状态,以及作为另一个索引的多个消息。
    • 40. 发明授权
    • Method of fabricating a semiconductor device having a shallow source/drain region
    • 制造具有浅源/漏区的半导体器件的方法
    • US07217625B2
    • 2007-05-15
    • US10753447
    • 2004-01-09
    • Sang-Jin LeeKyung-Soo KimChang-Bong OhHee-Sung Kang
    • Sang-Jin LeeKyung-Soo KimChang-Bong OhHee-Sung Kang
    • H01L21/336
    • H01L29/6653H01L21/2652H01L21/26586H01L29/6656H01L29/6659H01L29/7833
    • A method of fabricating a semiconductor device forms a shallow source/drain region after a deep source/drain region. First, a gate insulating layer including a gate pattern and a gate electrode are formed on a semiconductor substrate. A buffer insulating layer, a first insulating layer, and a second insulating layer are then sequentially formed on the entire surface of the gate pattern and the semiconductor substrate. A first spacer is formed on the first insulating layer at both sidewalls of the gate pattern by etching the second insulating layer. A deep source/drain region is then formed on the semiconductor substrate as aligned by the first spacer. The first spacer is removed. Next, an offset spacer is formed at both sidewalls of the gate pattern by etching the first insulating layer. Finally, a shallow source/drain region is formed on the semiconductor substrate adjacent to the deep source/drain region as aligned by the offset spacer.
    • 半导体器件的制造方法在深源极/漏极区域之后形成浅的源极/漏极区域。 首先,在半导体基板上形成包括栅极图案和栅电极的栅极绝缘层。 然后在栅极图案和半导体衬底的整个表面上依次形成缓冲绝缘层,第一绝缘层和第二绝缘层。 通过蚀刻第二绝缘层,在栅极图案的两个侧壁的第一绝缘层上形成第一间隔物。 然后在第一间隔物对准的半导体衬底上形成深源/漏区。 第一个垫片被去除。 接下来,通过蚀刻第一绝缘层在栅极图案的两个侧壁处形成偏移间隔物。 最后,在与偏移间隔物对齐的深源/漏区附近的半导体衬底上形成浅源极/漏极区。