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    • 32. 发明专利
    • PROTECTIVE SYSTEM FOR NUCLEAR POWER PLANT AND OPERATION DECIDING METHOD THEREFOR
    • JPH07280988A
    • 1995-10-27
    • JP7483894
    • 1994-04-13
    • TOSHIBA CORP
    • UDAGAWA KAZUYUKISAKAMOTO YASUNORINISHIYAMA HIROYUKIONO HIROSHI
    • G21C17/00G21D3/04
    • PURPOSE:To realize a protective safety operation of plant upon occurrence of abnormality by providing a section for deciding an abnormality based on various signals from a nuclear power plant, and a section for predicting the operating state of the plant, producing a protective operation command for avoiding stoppage of plant, and then delivering an operation command. CONSTITUTION:The plant protective system 13 takes in various signals from a plant through an abnormality deciding section 14 and a predicting section 15. When such a decision is made that the state of plant is abnormal at the section 14, a countermeasure deciding section 16 predicts and decides a necessary countermeasure operation based on abnormality decision information and predictive information from the section 15. Upon receiving an abnormality decision signal of pump trip at a turbine driven water supply section from the section 14 and predictive information of reduction of water supply to half from the section 15, the section 16 lowers the output of a nuclear reactor depending on the water supply through a countermeasure operation command section 17. Alternatively, protective operation can be effected by deciding whether the countermeasure operation should be effected at a control period or it can be started with some lag.
    • 33. 发明专利
    • POWER AMPLIFIER
    • JPH0252512A
    • 1990-02-22
    • JP20350388
    • 1988-08-16
    • TOSHIBA CORP
    • ONO HIROSHI
    • H03F3/68
    • PURPOSE:To prevent a damage of a normal amplifier by turning off a fault amplifier based on the output when a fault detection means monitors a power amplifier and detects the decreased output and reducing the output of a variable attenuator of other amplifier. CONSTITUTION:An input signal at an input terminal 11 is distributed by a distributer 12 and the result is synthesized by a synthesizer 15 via variable attenuators 13A-13C and power amplifiers 14A-14C and fed to the antenna. When the output of the amplifier 14 is lowered, a failure detection means 22 detects it, and the information is fed to a control circuit 23. The circuit 23 turns off a power switch 21A of the amplifier 14A to control attenuators 13B, 13C to other amplifiers 14B, 14C thereby reducing the output. Thus, the stress of a circulator in the normal power amplifier is reduced to prevent a damage thereby improving the safety and reliability of a transmission equipment.
    • 34. 发明专利
    • Television broadcasting device
    • 电视广播设备
    • JPS5778282A
    • 1982-05-15
    • JP15320780
    • 1980-10-31
    • Toshiba Corp
    • ONO HIROSHI
    • H04N5/38
    • H04N5/38
    • PURPOSE:To perform high efficiency easily, without beat interference, by performing pulse width modulation with a signal in a low frequency region of a video signal, then applying an output of an amplitude modulator to a power amplifier. CONSTITUTION:When a video input is applied to a VSB-AN modulator 11 through a compensation circuit 15, a signal of television video modulating wave is applied to a power amplifier, and a video output is picked up with power amplification. In a switching regulator 14, the level dificiency of video signal near the carrier frequency is compensated with a filter 23, and the level deficiency is compensated with a pulse width modulator 26 by performing pulse width modulation for a signal having the frequency band from 0 to f1. Thus, the efficiency is increased.
    • 目的:通过用视频信号的低频区域中的信号进行脉冲宽度调制,可以轻松实现高效率,无差拍干扰,然后将幅度调制器的输出施加到功率放大器。 构成:当通过补偿电路15将视频输入应用于VSB-AN调制器11时,将电视视频调制波的信号施加到功率放大器,并且以功率放大来拾取视频输出。 在开关调节器14中,利用滤波器​​23对载波频率附近的视频信号的电平差进行补偿,并通过对频带从0变为0的信号进行脉宽调制来对脉冲宽度调制器26补偿电平不足 f1。 因此,效率提高。
    • 35. 发明专利
    • 半導体発光素子及び発光装置
    • 半导体发光元件和发光器件
    • JP2015028967A
    • 2015-02-12
    • JP2013157359
    • 2013-07-30
    • 株式会社東芝Toshiba Corp
    • TAJIMA JUNPEIKIMURA SHIGEYAONO HIROSHISUGIYAMA NAOJINUNOUE SHINYA
    • H01L33/36
    • H01L33/387H01L33/0025H01L33/0079H01L33/06H01L33/20H01L33/32H01L33/385H01L33/405H01L33/62H01L33/64H01L33/642
    • 【課題】光取り出し効率を向上させることのできる半導体発光素子及び発光装置を提供する。【解決手段】第1基板80と積層体SBと電極11と導電層40とを備えた半導体発光素子110において、第1基板80は、第1方向と交差し第2方向に延びる第1側面80saとを有し、第1方向に交互に並ぶ複数の導電部81と複数の絶縁部82とを含む。積層体SBは、第2側面11bを有する第1半導体層10と、第1半導体層10と第1面80uとの間の第2半導体層20と、第1半導体層10と第2半導体層20との間の発光層30とを含む。電極11は第2側面11bの少なくとも一部を覆う。導電層40は、第2半導体層20と第1基板80との間に設けられ、複数の導電部40の少なくとも1つ及び第2半導体層20と電気的に接続される。第1側面11aと、導電層40の第1側面11aに最も近い部分との間に、少なくとも1つの絶縁部41、42、43が配置される。【選択図】図1
    • 要解决的问题:提供一种提高光提取效率的半导体发光元件和发光器件。解决方案:半导体发光元件110包括第一基板80,层叠体SB,电极11 以及导电层40.第一基板80具有与第一方向交叉且沿第二方向延伸的第一侧表面80sa,并且包括多个导电部分81和多个绝缘部分82,所述绝缘部分82交替并置在第一方向 方向。 层叠体SB具有:具有第二侧面11b的第一半导体层10,第一半导体层10和第一表面80u之间的第二半导体层20,以及位于第一半导体层10和第二半导体层10之间的发光层30 半导体层20.电极11覆盖第二侧面11b的至少一部分。 导电层40设置在第二半导体层20和第一基板80之间,并且电连接到多个导电部分40和第二半导体层20中的至少一个。绝缘部分41,42, 并且43设置在第一侧表面11a和最靠近第一侧表面11a的导电层40的一部分之间。
    • 37. 发明专利
    • Illumination device and light guide member
    • 照明装置和光导向构件
    • JP2014191920A
    • 2014-10-06
    • JP2013064622
    • 2013-03-26
    • Toshiba Corp株式会社東芝
    • ONO HIROSHIYAMAMOTO YUICHIROKATO MITSUAKITAKAMATSU TOMONAOSHIRATO MASATAKAHAYASHIBARA HIROMICHITAMURA HIDEOYAMAMOTO MASAHIKO
    • F21V8/00F21S8/04F21V29/00F21Y101/02
    • G02B6/005F21K9/20F21V2200/20F21Y2115/10G02B6/0021G02B6/0036G02B6/0043G02B6/0046G02B6/0061G02B6/0085
    • PROBLEM TO BE SOLVED: To provide an illumination device and a light guide member capable of efficiently emitting light from an emission surface such that the light arrives at an end portion of a light guide plate without losing transparent feeling.SOLUTION: A light guide unit 10 includes: a curved surface 10c in a region of a rear surface 10b farther than a first position A on the rear surface 10b away from an axis 110 passing through an emission surface 10a and the rear surface 10b by a first distance r; and a rough surface 10d in a region of the emission surface 10a farther than a second position B on the emission surface 10a away from the axis 110 by a second distance rin a direction identical to a direction from the axis 110 to the first position A. Providing that an intersection between the axis 110 and the rear surface 10b serves as an origin and that a direction of the axis 110 from the rear surface 10b toward the emission surface 10a is positive, a normal of the curved surface 10c crosses the axis 110 on a positive side of the axis 110, and an angle on the emission surface 10a at the second position B formed between a normal vector from the rear surface 10b toward the emission surface 10a and a vector from the curved surface 10c toward the second position B is equal to or greater than a critical angle.
    • 要解决的问题:提供一种照明装置和导光构件,其能够有效地从发射表面发射光,使得光到达导光板的端部而不会失去透明感。解决方案:导光单元10 包括:背面10b的比后表面10b上的第一位置A远离穿过发射表面10a的轴线110和后表面10b延伸第一距离r的区域中的曲面10c; 以及在发射表面10a的区域中的远离轴线110的距离与从轴线110到第一位置A的方向相同的方向上的第二距离的发射表面10a的区域中的粗糙表面10d。 提供轴线110和后表面10b之间的交点作为原点,并且轴线110从后表面10b朝向出射表面10a的方向为正,弯曲表面10c的法线与轴线110交叉 在轴线110的正侧,在从后表面10b向发射面10a的法线向量和从曲面10c向第二位置B的矢量之间形成的第二位置B的出射面10a上的角度为 等于或大于临界角。
    • 38. 发明专利
    • Semiconductor light-emitting element
    • 半导体发光元件
    • JP2013258208A
    • 2013-12-26
    • JP2012132222
    • 2012-06-11
    • Toshiba Corp株式会社東芝
    • TAJIMA JUNPEIZAIMA KOTAROKIMURA SHIGEYAONO HIROSHIYAMADA SHINJIMIKI SATOSHISUGIYAMA NAOJINUNOUE SHINYA
    • H01L33/32H01L21/205
    • H01L33/40H01L33/14H01L33/22H01L33/38
    • PROBLEM TO BE SOLVED: To provide a high-efficiency semiconductor light-emitting element.SOLUTION: There is provided a semiconductor light-emitting element including a first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a third semiconductor layer, and a second electrode that are sequentially stacked. The first to third semiconductor layers and the light-emitting layer include a nitride semiconductor. The first semiconductor layer has a first conductivity type. The second semiconductor layer has a second conductivity type. The third semiconductor layer is provided on a part of the second semiconductor layer. The impurity concentration of the second conductivity type of the third semiconductor layer is lower than that of the second semiconductor layer. The second electrode includes a pad portion and a thin-line portion. The pad portion is provided on the third semiconductor layer. The thin-line portion extends from the pad portion, has a portion extending along a flat surface perpendicular to the stacking direction, and is in contact with the second semiconductor layer.
    • 要解决的问题:提供一种高效率半导体发光元件。解决方案:提供一种半导体发光元件,包括第一电极,第一半导体层,发光层,第二半导体层,第二半导体层 第三半导体层和第二电极。 第一至第三半导体层和发光层包括氮化物半导体。 第一半导体层具有第一导电类型。 第二半导体层具有第二导电类型。 第三半导体层设置在第二半导体层的一部分上。 第三半导体层的第二导电类型的杂质浓度低于第二半导体层的杂质浓度。 第二电极包括焊盘部分和细线部分。 焊盘部分设置在第三半导体层上。 细线部分从焊盘部分延伸,具有沿垂直于堆叠方向的平坦表面延伸的部分,并与第二半导体层接触。
    • 40. 发明专利
    • Inertia sensor and inertia measuring device
    • INERTIA传感器和INERTIA测量装置
    • JP2010190774A
    • 2010-09-02
    • JP2009036404
    • 2009-02-19
    • Toshiba Corp株式会社東芝
    • KAWAKUBO TAKASHINAGANO TOSHIHIKONISHIGAKI MICHIHIKOONO HIROSHIITAYA KAZUHIKO
    • G01P15/08G01C19/56G01C19/5698G01P15/18H01L41/08H01L41/09H01L41/187H01L41/22
    • PROBLEM TO BE SOLVED: To provide an inertia sensor and an inertia measuring device that have an easy production process, are miniaturized and are highly accurate. SOLUTION: The inertia sensor and the inertia measuring device using the same are provided, including: a first beam having a substrate, an anchor part formed by patterning a piezoelectric film on the upper side part of the substrate and fixed on the substrate, a heavy bob formed by patterning the piezoelectric film, and a first surface acoustic wave resonator being formed by patterning the piezoelectric film and containing a comb-shaped electrode on the upper surface of the piezoelectric film, the one end of the first beam is fixed on the anchor part and the other end is fixed on the heavy bob; and a second beam having a second surface acoustic wave resonator having the same shaped comb-shaped electrode as the comb-shaped electrode on the upper surface of the piezoelectric film, the one end of the second beam being fixed to the anchor part, wherein an acceleration to the heavy bob is measured by detecting the difference of the resonance frequencies of the first surface acoustic wave resonator and the second surface acoustic wave resonator. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种具有易于生产过程的惯性传感器和惯性测量装置,其小型化并且高度准确。 解决方案:提供惯性传感器和使用其的惯性测量装置,包括:具有基板的第一梁,通过在基板的上侧部分上形成压电膜并固定在基板上形成的锚固部分 ,通过图案化压电膜形成的重锤,以及通过在压电膜的上表面上构图压电膜并包含梳状电极而形成的第一声表面波谐振器,第一光束的一端固定 在锚定部分上,另一端固定在重锤上; 以及具有第二声表面波谐振器的第二光束,所述第二表面声波谐振器在所述压电膜的上表面上具有与所述梳状电极相同的形状的梳状电极,所述第二光束的一端固定到所述锚固部分,其中, 通过检测第一表面声波谐振器和第二声表面波谐振器的谐振频率的差异来测量对重锤的加速度。 版权所有(C)2010,JPO&INPIT