专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US5774222A Manufacturing method of semiconductor substrative and method and apparatus for inspecting defects of patterns on an object to be inspected 失效
标题翻译：半导体衬底的制造方法以及用于检查待检查物体上的图案缺陷的方法和装置
公开(公告)号：US5774222A
公开(公告)日：1998-06-30
申请号：US539886
申请日：1995-10-06
申请人： Shunji Maeda , Yasuhiko Nakayama , Minoru Yoshida , Hitoshi Kubota , Kenji Oka
发明人： Shunji Maeda , Yasuhiko Nakayama , Minoru Yoshida , Hitoshi Kubota , Kenji Oka
IPC分类号： G01N21/95 , G01N21/956 , G01N21/88
CPC分类号： G01N21/8806 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/95615 , G01N2201/0618 , G01N2201/0634
摘要： A pattern detection method and apparatus thereof for inspecting with high resolution a micro fine defect of a pattern on an inspected object and a semiconductor substrate manufacturing method and system for manufacturing semiconductor substrates such as semiconductor wafers with a high yield. A micro fine pattern on the inspected object is inspected by irradiating an annular-looped illumination through an objective lens onto a wafer mounted on a stage, the wafer having micro fine patterns thereon. The illumination light may be circularly or elliptically polarized and controlled according to an image detected on the pupil of the objective lens and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect so that simultaneously, a micro fine defect or defects on the micro fine pattern are detected with high resolution. Further, process conditions of a manufacturing line are controlled by analyzing a cause of defect and a factor of defect which occurs on the pattern.
摘要翻译：一种用于以高分辨率检查被检查物体上的图案的微细缺陷的图案检测方法及其装置以及以高产率制造半导体晶片等半导体基板的半导体基板的制造方法和系统。通过将通过物镜的环形照明照射到安装在台架上的晶片上，检查被检查物体上的微细图案，晶片上具有微细精细图案。照明光可以根据在物镜的光瞳上检测到的图像而被圆形或椭圆偏振并且被控制，并且通过检测来自晶片的反射光来获得图像信号。将图像信号与参考图像信号进行比较，并且检测出显示不一致的图案的一部分作为缺陷，从而同时以高分辨率检测微细微图案或微细图案上的缺陷。此外，通过分析缺陷的原因和在图案上发生的缺陷因素来控制生产线的工艺条件。

32. 发明授权

US06404498B1 Manufacturing method of semiconductor substrate and method and apparatus for inspecting defects of patterns on an object to be inspected 失效
标题翻译：半导体基板的制造方法以及检查被检体的图案的缺陷的方法和装置
公开(公告)号：US06404498B1
公开(公告)日：2002-06-11
申请号：US09588201
申请日：2000-06-06
申请人： Shunji Maeda , Yasuhiko Nakayama , Minoru Yoshida , Hitoshi Kubota , Kenji Oka
发明人： Shunji Maeda , Yasuhiko Nakayama , Minoru Yoshida , Hitoshi Kubota , Kenji Oka
IPC分类号： G01B1100
CPC分类号： G01N21/8806 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/95615 , G01N2201/0618 , G01N2201/0634
摘要： A pattern detection method and apparatus for inspecting, with high resolution, a micro fine defect of a pattern on an inspected object, and a semiconductor substrate manufacturing method and system with a high yield. A micro fine pattern on the inspected object is inspected by annular-looped illumination through an objective lens onto a wafer, the wafer having micro fine patterns thereon. The illumination may be polarized and controlled according to an image detected on the pupil of the objective lens, and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect. Simultaneously, micro fine defects on the micro-fine pattern are detected with high resolution. Further, process conditions of a manufacturing line are controlled by analyzing a cause of defect and a factor of defect.
摘要翻译：用于以高分辨率检查被检查物体上的图案的微细缺陷的图案检测方法和装置，以及高产率的半导体基板制造方法和系统。被检查物体上的微细图案通过物镜通过环形照明被检查到晶片上，晶片上具有微细精细图案。照明可以根据在物镜的光瞳上检测到的图像进行偏振和控制，并且通过检测来自晶片的反射光来获得图像信号。将图像信号与参考图像信号进行比较，并且检测出显示不一致的图案的一部分作为缺陷。同时，以高分辨率检测微细图案上的微细缺陷。此外，通过分析缺陷的原因和缺陷因素来控制生产线的工艺条件。

33. 发明授权

US07221486B2 Method and apparatus for picking up 2D image of an object to be sensed 失效
标题翻译：拾取被感测物体的2D图像的方法和装置
公开(公告)号：US07221486B2
公开(公告)日：2007-05-22
申请号：US10265659
申请日：2002-10-08
申请人： Hiroshi Makihira , Shunji Maeda , Kenji Oka , Minoru Yoshida , Yasuhiko Nakayama
发明人： Hiroshi Makihira , Shunji Maeda , Kenji Oka , Minoru Yoshida , Yasuhiko Nakayama
IPC分类号： H04N1/04
CPC分类号： G06T7/0004 , G06T2207/30148
摘要： A method and apparatus for sensing by a linear image sensor a two-dimensional image of an object to be sensed includes detecting a position of the object by a position sensor having a first resolution, picking up an image of the object being projected in a direction (V-scan direction) generally perpendicular to an internal scan (H-scan) direction of the linear image sensor in synchronism with relative movement between the object and the linear image sensor, periodically switching a pixel size along the V-scan direction between a plurality of predefined pixel sizes during the relative movement between the object and the linear image sensor in accordance with information of the relative movement detected by the position sensor, and producing from an output of the linear image sensor a two-dimensional image of the projected image having a second resolution of the object to be sensed. The second resolution is a higher resolution than the first resolution.
摘要翻译：一种用于通过线性图像传感器检测待检测物体的二维图像的方法和装置包括通过具有第一分辨率的位置传感器检测物体的位置，拾取沿着方向投影的物体的图像（V扫描方向），与物体和线性图像传感器之间的相对运动同步地与线性图像传感器的内部扫描（H扫描）方向大致垂直，周期性地沿着V扫描方向切换像素尺寸，根据由位置传感器检测到的相对运动的信息，在物体和线性图像传感器之间的相对运动期间的多个预定像素尺寸，并且从线性图像传感器的输出产生投影图像的二维图像具有要被感测的物体的第二分辨率。第二项决议是比第一项决议更高的决议。

34. 发明申请

US20070070336A1 Manufacturing method of semiconductor substrate and method and apparatus for inspecting defects of patterns of an object to be inspected 失效
标题翻译：半导体基板的制造方法以及检查被检查体的图案的缺陷的方法和装置
公开(公告)号：US20070070336A1
公开(公告)日：2007-03-29
申请号：US11605242
申请日：2006-11-29
申请人： Shunji Maeda , Yasuhiko Nakayama , Minoru Yoshida , Hitoshi Kubota , Kenji Oka
发明人： Shunji Maeda , Yasuhiko Nakayama , Minoru Yoshida , Hitoshi Kubota , Kenji Oka
IPC分类号： G01N21/00
CPC分类号： G01N21/95607 , G01N21/8806 , G01N21/9501 , G01N21/956 , G01N2021/95615 , G01N2201/0618 , G01N2201/0634
摘要： A method of inspecting a specimen, including: emitting a light from a lamp of a light source; illuminating a specimen on which plural patterns are formed with the light emitted from the light source and, passed through an objective lens; forming an optical image of the specimen by collecting light reflected from the specimen by the illuminating and passed through the objective lens and a image forming lens; detecting the optical image with a TDI image sensor; and processing a signal outputted from the TDI image sensor and detecting a defect of a pattern among the plural patterns formed on the specimen, wherein the image detected by the TDI image sensor is formed with light having a wavelength selected from the wavelengths of the light emitted from the light source.
摘要翻译：一种检查样本的方法，包括：从光源的灯发射光; 用从光源发射的光照射形成有多个图案的样本，并通过物镜; 通过照射通过收集从样本反射的光并通过物镜和成像透镜来形成样本的光学图像; 用TDI图像传感器检测光学图像; 并处理从TDI图像传感器输出的信号，并且检测在样本上形成的多个图案之间的图案的缺陷，其中由TDI图像传感器检测到的图像由具有选自发射的光的波长的波长的光形成从光源。

35. 发明授权

US07180584B2 Manufacturing method of semiconductor substrate and method and apparatus for inspecting defects of patterns of an object to be inspected 失效
标题翻译：半导体基板的制造方法以及检查被检查体的图案的缺陷的方法和装置
公开(公告)号：US07180584B2
公开(公告)日：2007-02-20
申请号：US10686584
申请日：2003-10-17
申请人： Shunji Maeda , Yasuhiko Nakayama , Minoru Yoshida , Hitoshi Kubota , Kenji Oka
发明人： Shunji Maeda , Yasuhiko Nakayama , Minoru Yoshida , Hitoshi Kubota , Kenji Oka
IPC分类号： G01N21/00
CPC分类号： G01N21/8806 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/95615 , G01N2201/0618 , G01N2201/0634
摘要： A pattern detection method and apparatus thereof for inspecting with high resolution a micro fine defect of a pattern on an inspected object and a semiconductor substrate manufacturing method and system for manufacturing semiconductor substrates such as semiconductor wafers with a high yield. A micro fine pattern on the inspected object is inspected by irradiating an annular-looped illumination through an objective lens onto a wafer mounted on a stage, the wafer having micro fine patterns thereon. The illumination light may be circularly or elliptically polarized and controlled according to an image detected on the pupil of the objective lens and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect so that simultaneously, a micro fine defect or defects on the micro fine pattern are detected with high resolution. Further, process conditions of a manufacturing line are controlled by analyzing a cause of defect and a factor of defect which occurs on the pattern.
摘要翻译：一种用于以高分辨率检查被检查物体上的图案的微细缺陷的图案检测方法及其装置以及以高产率制造半导体晶片等半导体基板的半导体基板的制造方法和系统。通过将通过物镜的环形照明照射到安装在台架上的晶片上，检查被检查物体上的微细图案，晶片上具有微细精细图案。照明光可以根据在物镜的光瞳上检测到的图像而被圆形或椭圆偏振并且被控制，并且通过检测来自晶片的反射光来获得图像信号。将图像信号与参考图像信号进行比较，并且检测出显示不一致的图案的一部分作为缺陷，从而同时以高分辨率检测微细微图案或微细图案上的缺陷。此外，通过分析缺陷的原因和在图案上发生的缺陷因素来控制生产线的工艺条件。

36. 发明授权

US07061600B2 Manufacturing method of semiconductor substrate and method and apparatus for inspecting defects of patterns on an object to be inspected 失效
公开(公告)号：US07061600B2
公开(公告)日：2006-06-13
申请号：US10098478
申请日：2002-03-18
申请人： Shunji Maeda , Yasuhiko Nakayama , Minoru Yoshida , Hitoshi Kubota , Kenji Oka
发明人： Shunji Maeda , Yasuhiko Nakayama , Minoru Yoshida , Hitoshi Kubota , Kenji Oka
IPC分类号： G01N21/00
CPC分类号： G01N21/8806 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/95615 , G01N2201/0618 , G01N2201/0634
摘要： A pattern detection method and apparatus for inspecting, with high resolution, a micro fine defect of a pattern on an inspected object, and a semiconductor substrate manufacturing method and system with a high yield. A micro fine pattern on the inspected object is inspected by annular-looped illumination through an objective lens onto a wafer, the wafer having micro fine patterns thereon. The illumination may be polarized and controlled according to an image detected on the pupil of the objective lens, and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect. Simultaneously, micro fine defects on the micro-fine pattern are detected with high resolution. Further, process conditions of a manufacturing line are controlled by analyzing a cause of defect and a factor of defect.

37. 发明授权

US06263099B1 Manufacturing method of semiconductor substrate and method and apparatus for inspecting defects of patterns of an object to be inspected 失效
标题翻译：半导体基板的制造方法以及检查被检查体的图案的缺陷的方法和装置
公开(公告)号：US06263099B1
公开(公告)日：2001-07-17
申请号：US09107432
申请日：1998-06-30
申请人： Shunji Maeda , Yasuhiko Nakayama , Minoru Yoshida , Hitoshi Kubota , Kenji Oka
发明人： Shunji Maeda , Yasuhiko Nakayama , Minoru Yoshida , Hitoshi Kubota , Kenji Oka
IPC分类号： G06K900
CPC分类号： G01N21/8806 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/95615 , G01N2201/0618 , G01N2201/0634
摘要： A pattern detection method and apparatus thereof for inspecting with high resolution a micro fine defect of a pattern on an inspected object and a semiconductor substrate manufacturing method and system for manufacturing semiconductor substrates such as semiconductor wafers with a high yield. A micro fine pattern on the inspected object is inspected by irradiating an annular-looped illumination through an objective lens onto a wafer mounted on a stage, the wafer having micro fine patterns thereon. The illumination light may be circularly or elliptically polarized and controlled according to an image detected on the pupil of the objective lens and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect so that simultaneously, a micro fine defect or defects on the micro fine pattern are detected with high resolution. Further, process conditions of a manufacturing line are controlled by analyzing a cause of defect and a factor of defect which occurs on the pattern.
摘要翻译：一种用于以高分辨率检查被检查物体上的图案的微细缺陷的图案检测方法及其装置以及以高产率制造半导体晶片等半导体基板的半导体基板的制造方法和系统。通过将通过物镜的环形照明照射到安装在台架上的晶片上，检查被检查物体上的微细图案，晶片上具有微细精细图案。照明光可以根据在物镜的光瞳上检测到的图像而被圆形或椭圆偏振并且被控制，并且通过检测来自晶片的反射光来获得图像信号。将图像信号与参考图像信号进行比较，并且检测出显示不一致的图案的一部分作为缺陷，从而同时以高分辨率检测微细微图案或微细图案上的缺陷。此外，通过分析缺陷的原因和在图案上发生的缺陷因素来控制生产线的工艺条件。

38. 发明授权

US06236057B1 Method of inspecting pattern and apparatus thereof with a differential brightness image detection 有权
标题翻译：用差分亮度图像检测来检查图案及其装置的方法
公开(公告)号：US06236057B1
公开(公告)日：2001-05-22
申请号：US09610954
申请日：2000-07-06
申请人： Chie Shishido , Takashi Hiroi , Haruo Yoda , Masahiro Watanabe , Asahiro Kuni , Maki Tanaka , Takanori Ninomiya , Hideaki Doi , Shunji Maeda , Mari Nozoe , Hiroyuki Shinoda , Atsuko Takafuji , Aritoshi Sugimoto , Yasutsugu Usami
发明人： Chie Shishido , Takashi Hiroi , Haruo Yoda , Masahiro Watanabe , Asahiro Kuni , Maki Tanaka , Takanori Ninomiya , Hideaki Doi , Shunji Maeda , Mari Nozoe , Hiroyuki Shinoda , Atsuko Takafuji , Aritoshi Sugimoto , Yasutsugu Usami
IPC分类号： G01N2188
CPC分类号： G01N21/95607
摘要： A method and apparatus for inspecting a pattern, a first image of a first area on a sample is acquired by imaging the first area formed as a first pattern, and the first image is memorized. A second image of a second area on the sample is acquired by imaging the second area formed as a second pattern which is to be the same as the first pattern. A defect of the first pattern is detected by acquiring a differential image between the first image and the second image. The detection of the defect includes processing the differential image by using information of brightness corresponding to both of the first image and the second image.
摘要翻译：通过对形成为第一图案的第一区域进行成像，并记录第一图像来获取用于检查图案的样品的第一区域的第一图像的方法和装置。通过对形成为与第一图案相同的第二图案的第二区域成像来获取样品上的第二区域的第二图像。通过获取第一图像和第二图像之间的差分图像来检测第一图案的缺陷。缺陷的检测包括通过使用与第一图像和第二图像两者相对应的亮度的信息来处理差分图像。

39. 发明授权

US6087673A Method of inspecting pattern and apparatus thereof 失效
标题翻译：检查图案及其装置的方法
公开(公告)号：US6087673A
公开(公告)日：2000-07-11
申请号：US81636
申请日：1998-05-20
申请人： Chie Shishido , Takashi Hiroi , Haruo Yoda , Masahiro Watanabe , Asahiro Kuni , Maki Tanaka , Takanori Ninomiya , Hideaki Doi , Shunji Maeda , Mari Nozoe , Hiroyuki Shinoda , Atsuko Takafuji , Aritoshi Sugimoto , Yasutsugu Usami
发明人： Chie Shishido , Takashi Hiroi , Haruo Yoda , Masahiro Watanabe , Asahiro Kuni , Maki Tanaka , Takanori Ninomiya , Hideaki Doi , Shunji Maeda , Mari Nozoe , Hiroyuki Shinoda , Atsuko Takafuji , Aritoshi Sugimoto , Yasutsugu Usami
IPC分类号： G01N23/20 , G01N21/88 , G01N21/956 , G01N23/225 , G06T1/00 , H01L21/66
CPC分类号： G01N21/95607
摘要： In a method of inspecting a defect and an apparatus thereof, an allowable range for a gradation value of a difference image is determined for each pixel from one pixel or less of position shift quantity between two images to be compared, a variation rate in a local gradation value of an image, and a representative value of the local gradation value. Then, by comparing the gradation value of the difference image with the allowable range determined for each pixel, a pixel, on which the gradation value of the difference image is within the allowable range, is judged to be an non-defective candidate and a pixel, on which the gradation value of the difference image is beyond the allowable range, is judged to be a defective candidate. This reduces the number of false information caused by mismatches attributed to an object to be inspected and an image detecting system, such as an infinitesimal difference in pattern configuration, a difference in the gradation value, a distortion of a pattern, and a position shift, thus making it possible to detect a more minute defect.
摘要翻译：在检查缺陷的方法和装置中，针对要比较的两个图像之间的位置偏移量的一个像素或更少的像素，针对每个像素确定差分图像的灰度值的允许范围，局部变化率图像的灰度值和局部灰度值的代表值。然后，通过将差分图像的灰度值与对于每个像素确定的容许范围进行比较，将差分图像的灰度值在允许范围内的像素判断为无缺陷候选和像素，其中差分图像的灰度值超出允许范围，被判断为缺陷候选。这减少了归因于待检查对象的失配和图像检测系统引起的错误信息的数量，例如图案配置中的无穷小差异，灰度值的差异，图案的失真和位置偏移，从而可以检测到更小的缺陷。

40. 发明授权

US06376854B2 Method of inspecting a pattern on a substrate 有权
标题翻译：检查基板上的图案的方法
公开(公告)号：US06376854B2
公开(公告)日：2002-04-23
申请号：US09848422
申请日：2001-05-04
申请人： Chie Shishido , Takashi Hiroi , Haruo Yoda , Masahiro Watanabe , Asahiro Kuni , Maki Tanaka , Takanori Ninomiya , Hideaki Doi , Shunji Maeda , Mari Nozoe , Hiroyuki Shinoda , Atsuko Takafuji , Aritoshi Sugimoto , Yasutsugu Usami
发明人： Chie Shishido , Takashi Hiroi , Haruo Yoda , Masahiro Watanabe , Asahiro Kuni , Maki Tanaka , Takanori Ninomiya , Hideaki Doi , Shunji Maeda , Mari Nozoe , Hiroyuki Shinoda , Atsuko Takafuji , Aritoshi Sugimoto , Yasutsugu Usami
IPC分类号： G01N2188
CPC分类号： G01N21/95607
摘要： A method for inspecting a pattern formed on a substrate, includes the steps of moving a table along a first direction on which a substrate to be inspected is mounted, irradiating a converged electron beam on the substrate by scanning the converged electron beam along a second direction which is perpendicular to the first direction; detecting an electron radiated from the substrate by the irradiation of the converged electron beam in which the movement of the table and the scanning of the converged electron beam are synchronized; forming a digital image of the substrate from the detected electron; improving a quality of the digital image by filtering the digital image; and detecting a defect of a pattern formed on the substrate by using the improved quality digital image.
摘要翻译：一种用于检查形成在基板上的图案的方法，包括以下步骤：沿着安装有待检查的基板的第一方向移动工作台，通过沿第二方向扫描会聚的电子束将会聚的电子束照射在基板上其垂直于第一方向; 通过会聚电子束的照射来检测从基板辐射的电子，其中台的移动和会聚电子束的扫描同步; 从检测到的电子形成衬底的数字图像; 通过过滤数字图像来提高数字图像的质量; 以及通过使用改进的质量数字图像来检测在基板上形成的图案的缺陷。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式