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31. 发明申请

US20100176423A1 SOLID-STATE IMAGE SENSOR AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：固态图像传感器及其制造方法
公开(公告)号：US20100176423A1
公开(公告)日：2010-07-15
申请号：US12676520
申请日：2008-09-04
申请人： Shigetoshi Sugawa , Yasushi Kondo , Hideki Tominaga
发明人： Shigetoshi Sugawa , Yasushi Kondo , Hideki Tominaga
IPC分类号： H01L31/14 , H01L31/18 , H01L31/0352
CPC分类号： H04N5/335 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14645 , H01L27/14689 , H04N5/374 , H04N5/37452 , H04N5/378
摘要： A floating diffusion (331) is created substantially at center of the light-receiving surface of an embedded photodiode (31), with a gate electrode of a transfer transistor (32) surrounding the floating diffusion. The concentration (or depth) of impurities in a p+-type semiconductor region, n-type semiconductor region or p-well region is changed in an inclined form so that a potential gradient being inclined downwards from the circumference to the center is created when an appropriate bias voltage is applied to the pn junction. The photocharges produced by incident light are rapidly moved along the potential gradient toward the center. Even in the case where the photocharge storage time is short, the photocharges can be efficiently collected since the maximum moving distance from the circumference of the photodiode (31) to the floating diffusion (331). Thus, the photocharges produced by the photodiode (31) are efficiently utilized, whereby the detection sensitivity is improved.
摘要翻译：基本上在嵌入式光电二极管（31）的光接收表面的中心处形成浮动扩散（331），其中传输晶体管（32）的栅电极围绕浮动扩散。 p +型半导体区域，n型半导体区域或p阱区域中的杂质的浓度（或深度）以倾斜形式改变，使得当从圆周向中心倾斜的电位梯度当适当的偏置电压施加到pn结。由入射光产生的光电荷沿电势梯度快速移动到中心。即使在光电荷存储时间短的情况下，由于从光电二极管（31）的周边到浮动扩散（331）的最大移动距离，也可以有效地收集光电荷。因此，有效地利用由光电二极管（31）产生的光电荷，从而提高检测灵敏度。

32. 发明申请

US20100155787A1 SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：固态图像拾取器件及其制造方法
公开(公告)号：US20100155787A1
公开(公告)日：2010-06-24
申请号：US12716488
申请日：2010-03-03
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L27/148
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor.
摘要翻译：在半导体衬底上的MOS型固体摄像器件包括具有第一导电类型的第一半导体区域，第二导电类型的第二半导体区域，第一导电类型的第三半导体区域的光电转换单元以及具有设置在绝缘膜上并从第四半导体区域传送电荷载流子的栅电极的转移MOS晶体管。此外，具有栅电极的放大MOS晶体管连接到第四半导体区域，并且第二导电类型的第五半导体区域连续地设置到第二半导体区域和栅电极下方，并且与绝缘体在转移MOS晶体管的栅极电极下方。

33. 发明授权

US07663734B2 Pattern writing system and pattern writing method 有权
标题翻译：图案写作系统和图案写作方法
公开(公告)号：US07663734B2
公开(公告)日：2010-02-16
申请号：US10552731
申请日：2004-04-09
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Kimio Yanagida , Kiwamu Takehisa
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Kimio Yanagida , Kiwamu Takehisa
IPC分类号： G03B27/54
CPC分类号： G03F7/70425 , G03F7/70291 , G03F7/70358 , G03F7/70433 , G03F7/70441 , G03F7/70466 , G03F7/70866
摘要： In a pattern writing method for writing a pattern on a substrate by the use of projection patterns output from a mirror device including two-dimensionally arranged micromirrors, exposure is implemented by ON/OFF controlling each micromirror and partly overlapping the projection patterns from the mirror device at least in a one-dimensional direction, thereby accurately controlling the exposure of intermediate amounts of light.
摘要翻译：在通过使用从包括二维布置的微镜的反射镜装置输出的投影图案在基板上写入图案的图案写入方法中，通过对每个微反射镜进行ON / OFF控制来实现曝光，并且部分地与来自反射镜装置的投影图案重叠至少在一维方向上，从而精确地控制中等量的光的曝光。

34. 发明授权

US07566936B2 Complementary MIS device 失效
标题翻译：互补MIS设备
公开(公告)号：US07566936B2
公开(公告)日：2009-07-28
申请号：US11606181
申请日：2006-11-30
申请人： Tadahiro Ohmi , Koji Kotani , Shigetoshi Sugawa
发明人： Tadahiro Ohmi , Koji Kotani , Shigetoshi Sugawa
IPC分类号： H01L29/76
CPC分类号： H01L29/045 , H01L21/823807 , H01L21/823821 , H01L27/092 , H01L27/0922 , H01L29/66795 , H01L29/7851
摘要： A CMOS device includes a p-channel MOS transistor and an n-channel MOS transistor having a structure formed on a (100) surface of a silicon substrate and having a different crystal surface, a high-quality gate insulation film formed on such a structure by a microwave plasma process, and a gate electrode formed thereon, wherein the size and the shape of the foregoing structure is set such that the carrier mobility is balanced between the p-channel MOS transistor and the n-channel MOS transistor.
摘要翻译： CMOS器件包括具有形成在硅衬底（100）表面上并具有不同晶体表面的结构的p沟道MOS晶体管和n沟道MOS晶体管，形成在这种结构上的高质量栅极绝缘膜通过微波等离子体处理和形成在其上的栅电极，其中上述结构的尺寸和形状被设置为使得载流子迁移率在p沟道MOS晶体管和n沟道MOS晶体管之间平衡。

35. 发明申请

US20080224145A1 Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof 有权
公开(公告)号：US20080224145A1
公开(公告)日：2008-09-18
申请号：US11907348
申请日：2007-10-11
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Katsuyuki Sekine , Yuji Saito
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Katsuyuki Sekine , Yuji Saito
IPC分类号： H01L29/04 , H01L29/788 , H01L29/78 , H01L27/12 , H01L21/316 , H01L21/762
CPC分类号： H01L21/28185 , G11C11/16 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/28238 , H01L21/28291 , H01L27/11521 , H01L27/11585 , H01L27/1159 , H01L27/1203 , H01L29/045 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66825 , H01L29/7833 , H01L29/78603 , H01L29/78612 , H01L29/7883
摘要： A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.

36. 发明申请

US20070257281A1 SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：固态图像拾取器件及其制造方法
公开(公告)号：US20070257281A1
公开(公告)日：2007-11-08
申请号：US11773731
申请日：2007-07-05
申请人： TORU KOIZUMI , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： TORU KOIZUMI , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L31/06
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, a third semiconductor region of the first conductivity type disposed at a light incident side of the second semiconductor region, and a transfer MOS transistor having the second semiconductor region, a fourth semiconductor region of the second conductivity type, and a gate electrode disposed on an insulating film on the first semiconductor region between the photoelectric conversion unit and the fourth semiconductor region to transfer a charge carrier from the second semiconductor region to the fourth semiconductor region. The photoelectric conversion unit and the transfer MOS transistor are disposed on a substrate. A fifth semiconductor region of the second conductivity type is arranged continuously to the second semiconductor region under the gate electrode, and a sixth semiconductor region of the second conductivity type having an impurity concentration lower than that of the fourth semiconductor region is arranged at a side of the gate electrode in the fourth semiconductor region. A drain of the transfer MOS transistor includes the fourth and sixth semiconductor regions, and a bias is applied to the drain, and the fifth semiconductor region is depleted during reading out the charge carrier from the second semiconductor region.
摘要翻译： MOS型固态摄像装置包括：具有第一导电类型的第一半导体区域的第一半导体区域的第二半导体区域和与该第一半导体区域形成pn结的第二导电类型的第二半导体区域的光电转换单元，设置在第二半导体区域的光入射侧的第一导电类型和具有第二半导体区域的转移MOS晶体管，第二导电类型的第四半导体区域和设置在第一半导体上的绝缘膜上的栅电极区域，以将电荷载体从第二半导体区域转移到第四半导体区域。光电转换单元和转移MOS晶体管设置在基板上。第二导电类型的第五半导体区域被连续配置到栅极下方的第二半导体区域，并且具有比第四半导体区域低的杂质浓度的第二导电类型的第六半导体区域被布置在在第四半导体区域中的栅电极。转移MOS晶体管的漏极包括第四和第六半导体区域，并且偏置被施加到漏极，并且在从第二半导体区域读出电荷载流子期间，第五半导体区域被耗尽。

37. 发明授权

US07012311B2 Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof 失效
标题翻译：在Si晶体的（111）表面上形成的半导体器件及其制造方法
公开(公告)号：US07012311B2
公开(公告)日：2006-03-14
申请号：US09866576
申请日：2001-05-29
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Katsuyuki Sekine , Yuji Saito
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Katsuyuki Sekine , Yuji Saito
IPC分类号： H01L29/94
CPC分类号： H01L21/28185 , G11C11/16 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/28238 , H01L21/28291 , H01L27/11521 , H01L27/11585 , H01L27/1159 , H01L27/1203 , H01L29/045 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66825 , H01L29/7833 , H01L29/78603 , H01L29/78612 , H01L29/7883
摘要： A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.
摘要翻译：半导体器件包括在（111）表面附近具有晶体表面的Si晶体和形成在所述晶体表面上的绝缘膜，所述绝缘膜的至少一部分包括含有Kr或Si氮化物的Si氧化物膜含Ar或Kr的薄膜。

38. 发明授权

US06831685B1 Solid-state image pickup element 失效
标题翻译：固态摄像元件
公开(公告)号：US06831685B1
公开(公告)日：2004-12-14
申请号：US09316947
申请日：1999-05-24
申请人： Isamu Ueno , Shigetoshi Sugawa , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Isamu Ueno , Shigetoshi Sugawa , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H04N964
CPC分类号： H04N5/3698 , H04N5/3595 , H04N5/376 , H04N5/378
摘要： This invention is to provide a solid-state image pickup element including a sensor unit including a plurality of lines of photoelectric conversion units for generating charges from received light by photoelectric conversion, a memory unit including a plurality of lines of storage units for storing signals from the plurality of lines of photoelectric conversion units, a transfer unit for transferring a signal from the sensor unit to the memory unit, a control unit for causing storage units of an arbitrary block in the memory unit to output an image signal from the photoelectric conversion units and causing the photoelectric conversion units corresponding to the storage units of the arbitrary block to output a noise signal, and a subtracting unit for calculating a difference between the image signal and the noise signal.
摘要翻译：本发明提供一种固态摄像元件，包括：传感器单元，包括多条光电转换单元，用于通过光电转换从接收的光产生电荷;存储单元，包括多行存储单元，用于存储来自多条光电转换单元，用于将信号从传感器单元传送到存储单元的转移单元，用于使存储单元中的任意块的存储单元输出来自光电转换单元的图像信号的控制单元并且使与所述任意块的存储单元对应的光电转换单元输出噪声信号，以及用于计算图像信号和噪声信号之间的差的减法单元。

39. 发明授权

US06669825B2 Method of forming a dielectric film 失效
公开(公告)号：US06669825B2
公开(公告)日：2003-12-30
申请号：US09867767
申请日：2001-05-31
申请人： Tadahiro Ohmi , Shigetoshi Sugawa
发明人： Tadahiro Ohmi , Shigetoshi Sugawa
IPC分类号： C23C1434
CPC分类号： H01L21/31641 , C23C8/02 , C23C8/36 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02323 , H01L21/02329 , H01L21/0234 , H01L21/3105 , H01L21/3144 , H01L21/31612 , H01L21/31637 , H01L21/31662 , H01L21/3185 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11546 , H01L29/42324
摘要： A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas.

40. 发明授权

US06633334B1 Solid-state image pickup device with optimum layout of building components around a photoelectric conversion portion 失效
标题翻译：具有在光电转换部分周围的建筑部件的最佳布局的固态图像拾取装置
公开(公告)号：US06633334B1
公开(公告)日：2003-10-14
申请号：US09215195
申请日：1998-12-18
申请人： Katsuhito Sakurai , Shigetoshi Sugawa , Isami Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Hiroki Hiyama
发明人： Katsuhito Sakurai , Shigetoshi Sugawa , Isami Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Hiroki Hiyama
IPC分类号： H04N5335
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14643
摘要： To optimize the layout of a pixel portion, there is provided a solid-state image pickup device including a photoelectric conversion portion, a charge transfer portion for transferring signal charges generated in the photoelectric conversion portion, and an amplifier portion for amplifying a signal corresponding to the signal charges transferred from the charge transfer portion and outputting the signal, wherein a plurality of photoelectric conversion portions, a plurality of charge transfer portions, and a plurality of amplifier portions are arranged in the row or/and column directions, and the charge transfer portion and the amplifier portion which are closest to each other are connected.
摘要翻译：为了优化像素部分的布局，提供了一种固态图像拾取装置，包括光电转换部分，用于传送在光电转换部分中产生的信号电荷的电荷转移部分，以及用于放大对应于从电荷转移部分传送的信号电荷并输出信号，其中多个光电转换部分，多个电荷转移部分和多个放大器部分被排列在行或/和列方向上，并且电荷转移部分和最靠近彼此的放大器部分相连。

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