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1. 发明申请

US20120146100A1 SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：固态图像拾取器件及其制造方法
公开(公告)号：US20120146100A1
公开(公告)日：2012-06-14
申请号：US13364601
申请日：2012-02-02
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L27/148
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.
摘要翻译： MOS型固态摄像装置设置在半导体衬底上，并包括具有第一半导体区域，第二半导体区域和第三半导体区域的光电转换单元。传输栅电极设置在绝缘膜上并将载体从第二半导体区传送到第四半导体区，放大MOS晶体管具有与第四半导体区连接的栅电极。另外，第五半导体区域在栅极下方连续地设置到第二半导体区域。第三半导体区域的整个表面被绝缘膜覆盖，并且与传输栅极横向相对的第三半导体区域的侧部与第一半导体区域接触。

2. 发明申请

US20100155787A1 SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：固态图像拾取器件及其制造方法
公开(公告)号：US20100155787A1
公开(公告)日：2010-06-24
申请号：US12716488
申请日：2010-03-03
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L27/148
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor.
摘要翻译：在半导体衬底上的MOS型固体摄像器件包括具有第一导电类型的第一半导体区域，第二导电类型的第二半导体区域，第一导电类型的第三半导体区域的光电转换单元以及具有设置在绝缘膜上并从第四半导体区域传送电荷载流子的栅电极的转移MOS晶体管。此外，具有栅电极的放大MOS晶体管连接到第四半导体区域，并且第二导电类型的第五半导体区域连续地设置到第二半导体区域和栅电极下方，并且与绝缘体在转移MOS晶体管的栅极电极下方。

3. 发明申请

US20070257281A1 SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：固态图像拾取器件及其制造方法
公开(公告)号：US20070257281A1
公开(公告)日：2007-11-08
申请号：US11773731
申请日：2007-07-05
申请人： TORU KOIZUMI , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： TORU KOIZUMI , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L31/06
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, a third semiconductor region of the first conductivity type disposed at a light incident side of the second semiconductor region, and a transfer MOS transistor having the second semiconductor region, a fourth semiconductor region of the second conductivity type, and a gate electrode disposed on an insulating film on the first semiconductor region between the photoelectric conversion unit and the fourth semiconductor region to transfer a charge carrier from the second semiconductor region to the fourth semiconductor region. The photoelectric conversion unit and the transfer MOS transistor are disposed on a substrate. A fifth semiconductor region of the second conductivity type is arranged continuously to the second semiconductor region under the gate electrode, and a sixth semiconductor region of the second conductivity type having an impurity concentration lower than that of the fourth semiconductor region is arranged at a side of the gate electrode in the fourth semiconductor region. A drain of the transfer MOS transistor includes the fourth and sixth semiconductor regions, and a bias is applied to the drain, and the fifth semiconductor region is depleted during reading out the charge carrier from the second semiconductor region.
摘要翻译： MOS型固态摄像装置包括：具有第一导电类型的第一半导体区域的第一半导体区域的第二半导体区域和与该第一半导体区域形成pn结的第二导电类型的第二半导体区域的光电转换单元，设置在第二半导体区域的光入射侧的第一导电类型和具有第二半导体区域的转移MOS晶体管，第二导电类型的第四半导体区域和设置在第一半导体上的绝缘膜上的栅电极区域，以将电荷载体从第二半导体区域转移到第四半导体区域。光电转换单元和转移MOS晶体管设置在基板上。第二导电类型的第五半导体区域被连续配置到栅极下方的第二半导体区域，并且具有比第四半导体区域低的杂质浓度的第二导电类型的第六半导体区域被布置在在第四半导体区域中的栅电极。转移MOS晶体管的漏极包括第四和第六半导体区域，并且偏置被施加到漏极，并且在从第二半导体区域读出电荷载流子期间，第五半导体区域被耗尽。

4. 发明授权

US08138528B2 Solid state image pickup device and manufacturing method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US08138528B2
公开(公告)日：2012-03-20
申请号：US12716488
申请日：2010-03-03
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L29/76
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor.
摘要翻译：在半导体衬底上的MOS型固体摄像器件包括具有第一导电类型的第一半导体区域，第二导电类型的第二半导体区域，第一导电类型的第三半导体区域的光电转换单元以及具有设置在绝缘膜上并从第四半导体区域传送电荷载流子的栅电极的转移MOS晶体管。此外，具有栅电极的放大MOS晶体管连接到第四半导体区域，并且第二导电类型的第五半导体区域连续地设置到第二半导体区域和栅电极下方，并且与绝缘体在转移MOS晶体管的栅极电极下方。

5. 发明授权

US07705373B2 Solid state image pickup device and manufacturing method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US07705373B2
公开(公告)日：2010-04-27
申请号：US11773731
申请日：2007-07-05
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L29/76
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, a third semiconductor region of the first conductivity type disposed at a light incident side of the second semiconductor region, and a transfer MOS transistor having the second semiconductor region, a fourth semiconductor region of the second conductivity type, and a gate electrode disposed on an insulating film on the first semiconductor region between the photoelectric conversion unit and the fourth semiconductor region to transfer a charge carrier from the second semiconductor region to the fourth semiconductor region. The photoelectric conversion unit and the transfer MOS transistor are disposed on a substrate. A fifth semiconductor region of the second conductivity type is arranged continuously to the second semiconductor region under the gate electrode, and a sixth semiconductor region of the second conductivity type having an impurity concentration lower than that of the fourth semiconductor region is arranged at a side of the gate electrode in the fourth semiconductor region. A drain of the transfer MOS transistor includes the fourth and sixth semiconductor regions, and a bias is applied to the drain, and the fifth semiconductor region is depleted during reading out the charge carrier from the second semiconductor region.
摘要翻译： MOS型固态摄像装置包括：具有第一导电类型的第一半导体区域的第一半导体区域的第二半导体区域和与该第一半导体区域形成pn结的第二导电类型的第二半导体区域的光电转换单元，位于第二半导体区域的光入射侧的第一导电类型和具有第二半导体区域的转移MOS晶体管，第二导电类型的第四半导体区域和设置在第一半导体区域上的绝缘膜上的栅电极半导体区域，以将电荷载体从第二半导体区域转移到第四半导体区域。光电转换单元和转移MOS晶体管设置在基板上。第二导电类型的第五半导体区域被连续配置到栅极下方的第二半导体区域，并且具有比第四半导体区域低的杂质浓度的第二导电类型的第六半导体区域被布置在在第四半导体区域中的栅电极。转移MOS晶体管的漏极包括第四和第六半导体区域，并且偏置被施加到漏极，并且在从第二半导体区域读出电荷载流子期间，第五半导体区域被耗尽。

6. 发明授权

US06661459B1 Solid state image pickup device with LDD structure and reset transistor 有权
标题翻译：具有LDD结构和复位晶体管的固态图像拾取器件
公开(公告)号：US06661459B1
公开(公告)日：2003-12-09
申请号：US09271887
申请日：1999-03-18
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H04N314
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： In a solid state image pickup device, in order to form a bypass region with precisely controlled impurity concentration and width, there is provided a solid state image pickup device comprising a photoelectric conversion unit composed of a first region of a first conductive type formed on a semiconductor substrate and having a principal surface, a second region of a second conductive type formed in the first region, and a third region of the first conductive type present between the second region and the principal surface, a fourth region of the second conductive type formed in the first region, and a charge transfer unit including the first region, an insulation layer on the first region and a control electrode provided on the insulation layer, for transferring a signal charge accumulated in the photoelectric conversion unit, to the fourth region, wherein the photoelectric conversion unit and the charge transfer unit are connected through a fifth region of the second conductive type.
摘要翻译：在固态图像拾取装置中，为了形成具有精确控制的杂质浓度和宽度的旁路区域，提供了一种固态图像拾取装置，其包括光电转换单元，该光电转换单元由形成在第一导电类型的第一导电类型的第一区域半导体基板，具有主表面，形成在第一区域中的第二导电类型的第二区域和存在于第二区域和主表面之间的第一导电类型的第三区域，形成第二导电类型的第四区域在所述第一区域中，以及电荷转移单元，所述电荷转移单元包括所述第一区域，所述第一区域上的绝缘层和设置在所述绝缘层上的控制电极，用于将累积在所述光电转换单元中的信号电荷转移到所述第四区域，其中光电转换单元和电荷转移单元通过第二导电类型的第五区连接。

7. 发明授权

US08395193B2 Solid state image pickup device and manufacturing method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US08395193B2
公开(公告)日：2013-03-12
申请号：US13364601
申请日：2012-02-02
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L29/76
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.
摘要翻译： MOS型固态摄像装置设置在半导体衬底上，并包括具有第一半导体区域，第二半导体区域和第三半导体区域的光电转换单元。传输栅电极设置在绝缘膜上并将载体从第二半导体区传送到第四半导体区，放大MOS晶体管具有与第四半导体区连接的栅电极。另外，第五半导体区域在栅极下方连续地设置到第二半导体区域。第三半导体区域的整个表面被绝缘膜覆盖，并且与传输栅极横向相对的第三半导体区域的侧部与第一半导体区域接触。

8. 发明授权

US06831685B1 Solid-state image pickup element 失效
标题翻译：固态摄像元件
公开(公告)号：US06831685B1
公开(公告)日：2004-12-14
申请号：US09316947
申请日：1999-05-24
申请人： Isamu Ueno , Shigetoshi Sugawa , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Isamu Ueno , Shigetoshi Sugawa , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H04N964
CPC分类号： H04N5/3698 , H04N5/3595 , H04N5/376 , H04N5/378
摘要： This invention is to provide a solid-state image pickup element including a sensor unit including a plurality of lines of photoelectric conversion units for generating charges from received light by photoelectric conversion, a memory unit including a plurality of lines of storage units for storing signals from the plurality of lines of photoelectric conversion units, a transfer unit for transferring a signal from the sensor unit to the memory unit, a control unit for causing storage units of an arbitrary block in the memory unit to output an image signal from the photoelectric conversion units and causing the photoelectric conversion units corresponding to the storage units of the arbitrary block to output a noise signal, and a subtracting unit for calculating a difference between the image signal and the noise signal.
摘要翻译：本发明提供一种固态摄像元件，包括：传感器单元，包括多条光电转换单元，用于通过光电转换从接收的光产生电荷;存储单元，包括多行存储单元，用于存储来自多条光电转换单元，用于将信号从传感器单元传送到存储单元的转移单元，用于使存储单元中的任意块的存储单元输出来自光电转换单元的图像信号的控制单元并且使与所述任意块的存储单元对应的光电转换单元输出噪声信号，以及用于计算图像信号和噪声信号之间的差的减法单元。

9. 发明授权

US06605850B1 Solid-state image pickup device using layers having different refractive indices 有权
$Solid-state image pickup device using layers having different refractive indices$
标题翻译：使用具有不同折射率的层的固态图像拾取装置
公开(公告)号：US06605850B1
公开(公告)日：2003-08-12
申请号：US09706860
申请日：2000-11-07
申请人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L2714
CPC分类号： H01L27/14629 , H01L27/14609 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14643 , H01L27/14692 , H01L27/14698
摘要： To achieve a high density, high resolution, or size reduction, there is provided a solid-state image pickup device having a plurality of photoelectric conversion elements formed in a semiconductor substrate, conductive layers formed on the semiconductor substrate between the neighboring photoelectric conversion elements via an interlayer layer, a first interlayer layer formed on the photoelectric conversion elements and conductive layers, a second interlayer layer formed on the first interlayer layer, and microlenses formed above the photoelectric conversion elements, wherein the refraction index of the first interlayer layer located above the photoelectric conversion elements is different from that of the second interlayer layer.
摘要翻译：为了实现高密度，高分辨率或尺寸减小，提供了一种固态图像拾取装置，其具有形成在半导体衬底中的多个光电转换元件，在相邻的光电转换元件之间的半导体衬底上形成的导电层经由层间层，形成在光电转换元件和导电层上的第一层间层，形成在第一层间层上的第二层间层和形成在光电转换元件上方的微透镜，其中位于第一层间层上方的第一层间层的折射率光电转换元件与第二层间层不同。

10. 发明授权

US06188094B1 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US06188094B1
公开(公告)日：2001-02-13
申请号：US09270008
申请日：1999-03-16
申请人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L27148
CPC分类号： H01L27/14629 , H01L27/14609 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14643 , H01L27/14692 , H01L27/14698
摘要： To achieve a high density, high resolution, or size reduction, there is provided a solid-state image pickup device having a plurality of photoelectric conversion elements formed in a semiconductor substrate, conductive layers formed on the semiconductor substrate between the neighboring photoelectric conversion elements via an interlayer layer, a first interlayer layer formed on the photoelectric conversion elements and conductive layers, a second interlayer layer formed on the first interlayer layer, and microlenses formed above the photoelectric conversion elements, wherein the refraction index of the first interlayer layer located above the photoelectric conversion elements is different from that of the second interlayer layer.
摘要翻译：为了实现高密度，高分辨率或尺寸减小，提供了一种固态图像拾取装置，其具有形成在半导体衬底中的多个光电转换元件，在相邻的光电转换元件之间的半导体衬底上形成的导电层经由层间层，形成在光电转换元件和导电层上的第一层间层，形成在第一层间层上的第二层间层和形成在光电转换元件上方的微透镜，其中位于第一层间层上方的第一层间层的折射率光电转换元件与第二层间层不同。

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