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    • 1. 发明授权
    • Solid-state image sensor for capturing high-speed phenomena and drive method for the same
    • 用于捕获高速现象的固态图像传感器及其驱动方法
    • US09420210B2
    • 2016-08-16
    • US12996969
    • 2009-06-10
    • Shigetoshi SugawaYasushi KondoHideki Tominaga
    • Shigetoshi SugawaYasushi KondoHideki Tominaga
    • H04N5/235H04N5/378H04N5/3745H01L27/148H04N5/357
    • H04N5/378H01L27/14843H04N5/3575H04N5/37452
    • A burst reading memory section (200) and continuous reading memory section (210) are independently provided for each of the two-dimensionally arrayed pixels (10). The burst reading memory section (200) has capacitors (25001-25104) capable of holding a plurality of signals. The continuous reading memory section (210) has only one capacitor 213. Signal output lines for the two memory sections are separately provided. When a signal produced by photoelectric conversion at the pixel (10) is outputted on a pixel output line (14), the signal can be simultaneously written in the capacitors at both memory sections (200, 201), after which the signals can be separately extracted to the outside at different timings. Therefore, a series of images taken at extremely short intervals of time during a short period of time can be obtained at an arbitrary timing without impeding a continuous image-acquiring operation at a low frame rate. Accordingly, both an ultrahigh-speed imaging operation having a limitation on the number of frames and an imaging that is rather slow but has no limitation on the number of frames can be simultaneously performed.
    • 对于二维排列的像素(10)中的每一个,独立地提供突发读取存储器部分(200)和连续读取存储器部分(210)。 脉冲串读取存储部分(200)具有能够保持多个信号的电容器(25001-25104)。 连续读取存储部分(210)仅具有一个电容器213.两个存储器部分的信号输出线被单独提供。 当在像素(10)上通过光电转换产生的信号在像素输出线(14)上输出时,该信号可以同时写入两个存储部分(200,201)的电容器中,之后信号可以分开 在不同的时间提取到外面。 因此,可以在任意的时刻以非常短的时间间隔拍摄的一系列图像,而不会以低帧率阻碍连续的图像获取操作。 因此,可以同时执行对帧数量的限制和相当慢但对帧数量没有限制的成像的超高速成像操作。
    • 2. 发明授权
    • Solid-state image sensor
    • 固态图像传感器
    • US08541731B2
    • 2013-09-24
    • US12996613
    • 2009-06-10
    • Shigetoshi SugawaYasushi KondoHideki Tominaga
    • Shigetoshi SugawaYasushi KondoHideki Tominaga
    • H01L27/146H04N5/335
    • H04N5/335H01L27/14643H04N5/355H04N5/378
    • A pixel output line is provided for each of the pixels two-dimensionally arrayed in a pixel area. The pixel output lines are extended to a memory area, and a memory unit is connected to each of those lines. The memory unit includes a writing-side transistor, a reading-side transistor and a plurality of memory sections for holding signals for 104 image frames. A photocharge storage operation is simultaneously performed at all the pixels, and the thereby produced signals are outputted to the pixel output lines. In the memory unit, with the writing-side transistor in the ON state, the sampling transistor of a different memory section is sequentially turned on for each exposure cycle so as to sequentially hold a signal in the capacitor of each memory section. After a burst imaging operation is completed, all the pixel signals are sequentially read. Unlike CCDs, the present device does not simultaneously drive all gate loads, so that it can be driven at high speeds with low power consumption. Thus, the burst imaging can be performed at higher speeds than ever before.
    • 为像素区域中二维排列的每个像素提供像素输出线。 像素输出线被扩展到存储区域,并且存储器单元连接到这些行中的每一行。 存储单元包括写入侧晶体管,读取侧晶体管和用于保持104个图像帧的信号的多个存储器部分。 在所有像素处同时执行光电荷存储操作,并且由此产生的信号被输出到像素输出线。 在存储器单元中,在写入侧晶体管处于导通状态的情况下,对于每个曝光周期,不同存储器部分的采样晶体管顺序地导通,以便顺序地保持每个存储器部分的电容器中的信号。 在突发图像操作完成之后,依次读取所有像素信号。 与CCD不同,本装置不会同时驱动所有栅极负载,因此可以以低功耗高速驱动。 因此,可以以比以往更高的速度执行突发成像。
    • 3. 发明授权
    • Solid-state image sensor and imaging device
    • 固态图像传感器和成像装置
    • US08269838B2
    • 2012-09-18
    • US12676532
    • 2008-09-04
    • Shigetoshi SugawaYasushi KondoHideki Tominaga
    • Shigetoshi SugawaYasushi KondoHideki Tominaga
    • H04N5/228H04N5/335
    • H04N5/378H04N5/3415H04N5/374
    • A pixel output line (14) is independently provided for each of the pixels arranged in a two-dimensionally array within a pixel area so that pixel signals can be sequentially written in a plurality of memory sections (22) through the pixel output lines (14). When a plurality of frames of pixel signals are held in the memory sections (22), the pixel signals corresponding to two arbitrarily selected frames are read and respectively stored in sample-and-hold circuits (61 and 62), and their difference is obtained. Then, the difference signals corresponding to a predetermined range of the image are integrated, and the integrated value is compared with a threshold. If the integrated value exceeds the threshold, it is presumed that a change in an imaging object has occurred, and a pulse generation circuit (66) generates a trigger signal. By controlling the discontinuation and other imaging actions according to this trigger signal, it is possible to correctly take high-speed images of the situation before or after the occurrence of an objective phenomenon.
    • 像素输出线(14)被独立地设置在像素区域内以二维阵列布置的每个像素,使得可以通过像素输出线(14)将像素信号顺序地写入多个存储器部分(22) )。 当多个像素信号帧被保持在存储部分(22)中时,对应于两个任意选择的帧的像素信号被读取并分别存储在采样和保持电路(61和62)中,并且获得它们的差异 。 然后,对应于图像的预定范围的差分信号被积分,并将积分值与阈值进行比较。 如果积分值超过阈值,则假设成像对象发生变化,脉冲发生电路(66)产生触发信号。 通过根据该触发信号控制中断和其他成像动作,可以在目标现象发生之前或之后正确地拍摄情况。
    • 4. 发明申请
    • Solid-State Image Sensor and Drive Method for the Same
    • 固态图像传感器及其驱动方法
    • US20110085066A1
    • 2011-04-14
    • US12996969
    • 2009-06-10
    • Shigetoshi SugawaYasushi KondoHideki Tominaga
    • Shigetoshi SugawaYasushi KondoHideki Tominaga
    • H04N5/335
    • H04N5/378H01L27/14843H04N5/3575H04N5/37452
    • A burst reading memory section (200) and continuous reading memory section (210) are independently provided for each of the two-dimensionally arrayed pixels (10). The burst reading memory section (200) has capacitors (25001-25104) capable of holding a plurality of signals. The continuous reading memory section (210) has only one capacitor 213. Signal output lines for the two memory sections are separately provided. When a signal produced by photoelectric conversion at the pixel (10) is outputted on a pixel output line (14), the signal can be simultaneously written in the capacitors at both memory sections (200, 201), after which the signals can be separately extracted to the outside at different timings. Therefore, a series of images taken at extremely short intervals of time during a short period of time can be obtained at an arbitrary timing without impeding a continuous image-acquiring operation at a low frame rate. Accordingly, both an ultrahigh-speed imaging operation having a limitation on the number of frames and an imaging that is rather slow but has no limitation on the number of frames can be simultaneously performed.
    • 对于二维排列的像素(10)中的每一个,独立地提供突发读取存储器部分(200)和连续读取存储器部分(210)。 脉冲串读取存储部分(200)具有能够保持多个信号的电容器(25001-25104)。 连续读取存储部分(210)仅具有一个电容器213.两个存储器部分的信号输出线被单独提供。 当在像素(10)上通过光电转换产生的信号在像素输出线(14)上输出时,该信号可以同时写入两个存储器部分(200,201)的电容器中,之后信号可以分开 在不同的时间提取到外面。 因此,可以在任意的时刻以非常短的时间间隔拍摄的一系列图像,而不会以低帧率阻碍连续的图像获取操作。 因此,可以同时执行对帧数量的限制和相当慢但对帧数量没有限制的成像的超高速成像操作。
    • 5. 发明申请
    • SOLID-STATE IMAGE SENSOR AND DRIVE METHOD FOR THE SAME
    • 固态图像传感器及其驱动方法
    • US20100188538A1
    • 2010-07-29
    • US12676505
    • 2008-09-04
    • Shigetoshi SugawaYasushi KondoHideki Tominaga
    • Shigetoshi SugawaYasushi KondoHideki Tominaga
    • H04N5/335
    • H04N5/35572H04N5/3559H04N5/3575H04N5/3742H04N5/37452H04N5/378
    • An independent pixel output line (14) is provided for each of two-dimensionally arranged pixels (10) within a pixel area (2a). A plurality of memory sections are connected to each pixel output line (14). In a continuous reading mode, photocharge storage is simultaneously performed at all the pixels, and signals are collectively transferred from the pixels (10) through the pixel output lines (14) to the memory sections, after which the signals held in the memory sections are sequentially read and outputted. In a burst reading mode, the operations of simultaneously storing photocharges at all the pixels and collectively transferring signals from each pixel (10) through the pixel output line (14) to the memory sections are sequentially performed for each of the memory sections to hold signals corresponding to a plurality of frames. When a imaging halt command is given, the holding of new signals is halted, and a plurality of frames of image signals held in the memory sections at that point in time are sequentially read and outputted. Thus, both an ultrahigh-speed imaging operation with a limitation on the number of frames and an imaging mode that is rather slow but has no limitation on the number of frames can be performed.
    • 为像素区域(2a)内的二维排列的像素(10)中的每一个提供独立的像素输出线(14)。 多个存储器部分连接到每个像素输出线(14)。 在连续读取模式下,在所有像素处同时执行光电荷存储,并且将信号从像素(10)通过像素输出线(14)共同转移到存储器部分,之后保存在存储器部分中的信号为 依次读取并输出。 在突发读取模式下,对于每个存储器部分,顺序地执行将所有像素同时存储光电荷并将每个像素(10)的信号通过像素输出线(14)共同传送到存储器部分的操作,以保持信号 对应于多个帧。 当给出成像暂停命令时,停止新信号的保持,并且顺序读取并输出在该时间点保持在存储器部分中的多个图像信号帧。 因此,可以执行具有对帧数量的限制的超高速成像操作和相当慢但对帧数量没有限制的成像模式。
    • 6. 发明申请
    • SOLID-STATE IMAGE SENSOR AND METHOD FOR PRODUCING THE SAME
    • 固态图像传感器及其制造方法
    • US20100176423A1
    • 2010-07-15
    • US12676520
    • 2008-09-04
    • Shigetoshi SugawaYasushi KondoHideki Tominaga
    • Shigetoshi SugawaYasushi KondoHideki Tominaga
    • H01L31/14H01L31/18H01L31/0352
    • H04N5/335H01L27/14603H01L27/14609H01L27/14612H01L27/14645H01L27/14689H04N5/374H04N5/37452H04N5/378
    • A floating diffusion (331) is created substantially at center of the light-receiving surface of an embedded photodiode (31), with a gate electrode of a transfer transistor (32) surrounding the floating diffusion. The concentration (or depth) of impurities in a p+-type semiconductor region, n-type semiconductor region or p-well region is changed in an inclined form so that a potential gradient being inclined downwards from the circumference to the center is created when an appropriate bias voltage is applied to the pn junction. The photocharges produced by incident light are rapidly moved along the potential gradient toward the center. Even in the case where the photocharge storage time is short, the photocharges can be efficiently collected since the maximum moving distance from the circumference of the photodiode (31) to the floating diffusion (331). Thus, the photocharges produced by the photodiode (31) are efficiently utilized, whereby the detection sensitivity is improved.
    • 基本上在嵌入式光电二极管(31)的光接收表面的中心处形成浮动扩散(331),其中传输晶体管(32)的栅电极围绕浮动扩散。 p +型半导体区域,n型半导体区域或p阱区域中的杂质的浓度(或深度)以倾斜形式改变,使得当从圆周向中心倾斜的电位梯度当 适当的偏置电压施加到pn结。 由入射光产生的光电荷沿电势梯度快速移动到中心。 即使在光电荷存储时间短的情况下,由于从光电二极管(31)的周边到浮动扩散(331)的最大移动距离,也可以有效地收集光电荷。 因此,有效地利用由光电二极管(31)产生的光电荷,从而提高检测灵敏度。
    • 7. 发明授权
    • Two-color radiation thermometer
    • 双色辐射温度计
    • US07114846B2
    • 2006-10-03
    • US10815922
    • 2004-04-02
    • Hideki TominagaKunihiko OhkuboYasushi Kondo
    • Hideki TominagaKunihiko OhkuboYasushi Kondo
    • G01J5/08G01J5/02G01K1/02H01L31/0232
    • G01J5/602G01J5/58
    • A two-color radiation thermometer includes an image pickup device having micro photo receiving units arranged two-dimensionally; a light diverging device for diverging incident light coming from a measuring object into two paths and irradiating the light on two different areas on a two-dimensional light receiving surface of the image pickup device; a wavelength limitation device for limiting wavelengths of the light irradiated on the two different areas to first and second wavelengths, respectively; and a temperature calculation device. The calculation device receives image signals corresponding to the first and second wavelengths respectively from the micro photo receiving units located at the two different areas, and calculates the temperature of the measuring object based on the two image signals.
    • 双色辐射温度计包括具有二维布置的微照片接收单元的图像拾取装置; 光发散装置,用于将来自测量对象的入射光分散成两条路径,并将光照射在图像拾取装置的二维光接收表面上的两个不同区域上; 波长限制装置,用于分别将照射在两个不同区域上的光的波长限制为第一和第二波长; 和温度计算装置。 计算装置分别从位于两个不同区域的微照片接收单元接收对应于第一和第二波长的图像信号,并且基于两个图像信号计算测量对象的温度。
    • 10. 发明申请
    • Solid-State Image Sensor
    • 固态图像传感器
    • US20120112255A1
    • 2012-05-10
    • US13382878
    • 2010-06-23
    • Yasushi KondoHideki TominagaKenji TakuboRyuta HiroseShigetoshi SugawaHideki Mutoh
    • Yasushi KondoHideki TominagaKenji TakuboRyuta HiroseShigetoshi SugawaHideki Mutoh
    • H01L31/02
    • H01L27/14603H01L27/14607H01L27/14609H01L27/1461
    • A floating diffusion region is formed at an edge of a light-receiving surface of an embedded photodiode, with a transfer gate electrode located therebetween. A first region, with radially extending portions centered on the FD region, and a second region, located to the outside of the first region, are created in the substantially sector-shaped light-receiving surface. A dopant whose conductivity type is the same as the signal charges to be collected in the first region are introduced, whereby an electric field for moving the signal charges from the radially extending sections towards the center is created due to a three-dimensional field effect. As a result, the charge-transfer time is reduced. Additionally, since a circuit element in the subsequent stage can be placed adjacent to the floating diffusion region, the parasitic capacitance of the floating diffusion region can be reduced and a highly sensitive element can be obtained.
    • 在嵌入式光电二极管的光接收表面的边缘处形成浮动扩散区,其中位于其间的传输栅电极。 在大致扇形的光接收表面上形成有以FD区域为中心的径向延伸部分的第一区域和位于第一区域外部的第二区域。 引入导电类型与要在第一区域中收集的信号电荷相同的掺杂剂,由此由于三维场效应,产生用于使信号从径向延伸部分向中心移动的电场。 结果,电荷转移时间减少。 此外,由于随后阶段的电路元件可以放置在与浮动扩散区域相邻的位置,所以可以减小浮动扩散区域的寄生电容,并且可以获得高灵敏度的元件。