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31. 发明授权

US06908865B2 Method and apparatus for cleaning substrates 有权
标题翻译：洗涤基材的方法和设备
公开(公告)号：US06908865B2
公开(公告)日：2005-06-21
申请号：US10015433
申请日：2001-12-12
申请人： Martin Kranz , Srinivas Guggilla , Suraj Rengarajan , Mei Chang , Gongda Yao , Nitin Khurana , Gilbert Hausmann
发明人： Martin Kranz , Srinivas Guggilla , Suraj Rengarajan , Mei Chang , Gongda Yao , Nitin Khurana , Gilbert Hausmann
IPC分类号： C23G5/00 , H01L21/00 , H01L21/311 , H01L21/683 , H01L21/768 , H01L21/302
CPC分类号： H01L21/67167 , C23G5/00 , H01J2237/3355 , H01L21/31116 , H01L21/67109 , H01L21/67184 , H01L21/6831 , H01L21/76814 , H01L21/76871
摘要： Generally, a method for pre-cleaning native oxides and other contaminants from apertures on a substrate is provided. In one embodiment, a method for pre-cleaning apertures on a substrate includes disposing the substrate on a support member in a process chamber, cooling the substrate at least to a temperature of 100 degrees Celsius, and exposing the substrate to a pre-clean process. In another embodiment, a method for pre-cleaning apertures on a substrate includes cooling the substrate at least to a temperature of 100 degrees Celsius in a first chamber, transferring the substrate to a second chamber and pre-cleaning the substrate in the second chamber while maintaining a substrate temperature of 100 degrees Celsius.
摘要翻译：通常，提供了一种用于从衬底上的孔预先清洁天然氧化物和其它污染物的方法。在一个实施例中，用于预清洁衬底上的孔的方法包括将衬底设置在处理室中的支撑构件上，将衬底冷却至少至100摄氏度的温度，并将衬底暴露于预清洁过程。在另一个实施例中，用于预清洁衬底上的孔的方法包括在第一室中至少将摄氏100度的温度冷却至衬底，将衬底转移到第二腔室并在第二腔室中预先清洁衬底，同时保持基板温度为100摄氏度。

32. 发明授权

US06299689B1 Reflow chamber and process 失效
标题翻译：回流室和工艺
公开(公告)号：US06299689B1
公开(公告)日：2001-10-09
申请号：US09524239
申请日：2000-03-13
申请人： Hougong Wang , Steve Lai , Gongda Yao , Peijun Ding
发明人： Hougong Wang , Steve Lai , Gongda Yao , Peijun Ding
IPC分类号： B05C1300
CPC分类号： H01L21/76877 , C23C16/4404 , Y10T24/44017
摘要： A method and apparatus for reflowing a material layer is provided. The inventive method introduces into a reflow chamber a material which is at least as reactive or more reactive than a material to be reflowed (i.e., a gettering material). Preferably the gettering material is sputter deposited within the reflow chamber while a shield prevents the gettering material from reaching the material layer to be reflowed. The shield may be coupled to, or integral with a clamp for clamping a wafer (containing the material layer to be reflowed) to a wafer support provided sufficient venting exists so that contaminants degassed from the wafer may flow to the region between the sputtering target and the shield where the contaminants can react with gettering material. The shield may have a roughened top surface (the surface that faces the sputtering target) which deters gettering material from flaking off the shield and/or the shield may have a reflective bottom surface (the surface that faces the wafer) that reflects heat to the wafer.
摘要翻译：提供了用于回流材料层的方法和装置。本发明的方法将至少与被回流的材料（即吸气材料）反应性或反应性至少反应的材料引入回流室。优选地，吸气材料被溅射沉积在回流室内，而屏蔽件防止吸气材料到达要回流的材料层。屏蔽可以耦合到或与夹具一体地夹持晶片（包含待回流的材料层）到晶片支架，提供足够的通风，使得从晶片脱气的污染物可以流到溅射靶和溅射靶之间的区域污染物可与吸气材料反应的护罩。屏蔽可以具有粗糙的顶表面（面向溅射靶的表面），其阻止吸气材料从屏蔽层剥离和/或屏蔽件可以具有反射底部表面（面向晶片的表面），其将热量反射到晶圆。

33. 发明授权

US6077404A Reflow chamber and process 失效
标题翻译：回流室和工艺
公开(公告)号：US6077404A
公开(公告)日：2000-06-20
申请号：US24530
申请日：1998-02-17
申请人： Hougong Wang , Steve Lai , Gongda Yao , Peijun Ding
发明人： Hougong Wang , Steve Lai , Gongda Yao , Peijun Ding
IPC分类号： H01L21/3205 , C23C16/44 , H01L21/768 , C23C14/34
CPC分类号： H01L21/76877 , C23C16/4404 , Y10T24/44017
摘要： A method and apparatus for reflowing a material layer is provided. The inventive method introduces into a reflow chamber a material which is at least as reactive or more reactive than a material to be reflowed (i.e., a gettering material). Preferably the gettering material is sputter deposited within the reflow chamber while a shield prevents the gettering material from reaching the material layer to be reflowed. The shield may be coupled to, or integral with a clamp for clamping a wafer (containing the material layer to be reflowed) to a wafer support provided sufficient venting exists so that contaminants degassed from the wafer may flow to the region between the sputtering target and the shield where the contaminants can react with gettering material. The shield may have a roughened top surface (the surface that faces the sputtering target) which deters gettering material from flaking off the shield and/or the shield may have a reflective bottom surface (the surface that faces the wafer) that reflects heat to the wafer.
摘要翻译：提供了用于回流材料层的方法和装置。本发明的方法将至少与被回流的材料（即吸气材料）反应性或反应性至少反应的材料引入回流室。优选地，吸气材料被溅射沉积在回流室内，而屏蔽件防止吸气材料到达要回流的材料层。屏蔽可以耦合到或与夹具一体地夹持晶片（包含待回流的材料层）到晶片支架，提供足够的通风，使得从晶片脱气的污染物可以流到溅射靶和溅射靶之间的区域污染物可与吸气材料反应的护罩。屏蔽可以具有粗糙的顶表面（面向溅射靶的表面），其阻止吸气材料从屏蔽层剥离和/或屏蔽件可以具有反射底部表面（面向晶片的表面），其将热量反射到晶圆。

34. 发明授权

US06238533B1 Integrated PVD system for aluminum hole filling using ionized metal adhesion layer 失效
标题翻译：使用电离金属粘合层的铝孔填充的集成PVD系统
公开(公告)号：US06238533B1
公开(公告)日：2001-05-29
申请号：US08951990
申请日：1997-10-16
申请人： Peter Satitpunwaycha , Gongda Yao , Kenny King-Tai Ngan , Zheng Xu
发明人： Peter Satitpunwaycha , Gongda Yao , Kenny King-Tai Ngan , Zheng Xu
IPC分类号： C23C1434
CPC分类号： C23C14/0036 , C23C14/046 , C23C14/0641 , C23C14/14 , C23C14/32 , C23C14/345 , C23C14/35 , C23C14/358 , C23C14/568 , H01J37/321 , H01J37/34 , H01J2237/32 , H01L21/28518 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76876 , H01L21/76877 , H01L21/76882 , H01L23/485 , H01L23/5226 , H01L23/53223 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A hole filling process for an integrated circuit in which two wiring levels in the integrated circuit are connected by a narrow hole, especially where the underlying level is silicon. First, a physical vapor deposition (PVD) process fills a barrier tri-layer into the hole. The barrier tri-layer includes sequential layers of Ti, TiN, and graded TiNx, grown under conditions of a high-density plasma. Thereafter, a first aluminum layer is PVD deposited under conditions of a high-density plasma. A filling aluminum layer is then deposited by standard PVD techniques.
摘要翻译：用于集成电路的孔填充处理，其中集成电路中的两个布线电平通过窄孔连接，特别是在下层是硅的情况下。首先，物理气相沉积（PVD）工艺将阻挡三层填充到孔中。阻挡三层包括在高密度等离子体条件下生长的Ti，TiN和分级TiNx的顺序层。此后，在高密度等离子体的条件下沉积第一铝层。然后通过标准PVD技术沉积填充铝层。

35. 发明授权

US6045666A Aluminum hole filling method using ionized metal adhesion layer 失效
标题翻译：铝孔填充方法采用电离金属粘附层
公开(公告)号：US6045666A
公开(公告)日：2000-04-04
申请号：US977007
申请日：1997-11-24
申请人： Peter Satitpunwaycha , Gongda Yao , Kenny King-Tai Ngan , Zheng Xu
发明人： Peter Satitpunwaycha , Gongda Yao , Kenny King-Tai Ngan , Zheng Xu
IPC分类号： C23C14/00 , C23C14/04 , C23C14/06 , C23C14/14 , C23C14/32 , C23C14/34 , C23C14/35 , C23C14/56 , H01L21/285 , H01L21/768 , H01L23/485 , H01L23/522 , H01L23/532
CPC分类号： C23C14/0036 , C23C14/046 , C23C14/0641 , C23C14/14 , C23C14/32 , C23C14/345 , C23C14/35 , C23C14/358 , C23C14/568 , H01J37/321 , H01J37/34 , H01L21/28518 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76876 , H01L21/76877 , H01L21/76882 , H01L23/485 , H01L23/5226 , H01L23/53223 , H01L23/53233 , H01L23/53238 , H01J2237/32 , H01L2924/0002
摘要： A hole filling process for an integrated circuit in which wiring levels in the integrated circuit are connected by a narrow hole, especially where the underlying level is silicon. First, a physical vapor deposition (PVD) process fills a barrier tri-layer into the hole. The barrier tri-layer includes sequential layers of Ti, TiN, and graded TiN.sub.x, grown under conditions of a high-density plasma. Thereafter, a first aluminum layer is PVD deposited under conditions of a high-density plasma. A filling aluminum layer is then deposited by standard PVD techniques.
摘要翻译：一种用于集成电路的孔填充过程，其中集成电路中的布线电平通过窄孔连接，特别是在下层是硅的情况下。首先，物理气相沉积（PVD）工艺将阻挡三层填充到孔中。阻挡三层包括在高密度等离子体条件下生长的Ti，TiN和分级TiNx的顺序层。此后，在高密度等离子体的条件下沉积第一铝层。然后通过标准PVD技术沉积填充铝层。

36. 发明授权

US6077402A Central coil design for ionized metal plasma deposition 失效
标题翻译：用于电离金属等离子体沉积的中心线圈设计
公开(公告)号：US6077402A
公开(公告)日：2000-06-20
申请号：US857719
申请日：1997-05-16
申请人： Liubo Hong , Hougong Wang , Gongda Yao , Zheng Xu
发明人： Liubo Hong , Hougong Wang , Gongda Yao , Zheng Xu
IPC分类号： H05H1/46 , C23C14/34 , C23C14/40 , H01J37/32 , H01J37/34 , H01L21/203 , H01L21/285
CPC分类号： H01J37/321 , H01J37/34 , H01J2237/3323
摘要： In a plasma generating apparatus, a coil is positioned between a target and a workpiece to inductively couple RF energy into a plasma so that the paths of a portion of the ionized deposition material are deflected from the center of the workpiece and toward the edges of the workpiece. As a consequence, it has been found that the uniformity of deposition may be improved. In the illustrated embodiment, the coil is a multi-turn coil formed in a generally planar spiral centered in the stream of deposition material.
摘要翻译：在等离子体发生装置中，线圈位于靶和工件之间，以将RF能量感应耦合到等离子体中，使得电离沉积材料的一部分的路径从工件的中心偏转并且朝向工件的边缘工件。因此，已经发现可以提高沉积的均匀性。在所示实施例中，线圈是形成在沉积材料流中心的大致平面螺旋形的多匝线圈。

37. 发明授权

US06451179B1 Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma 失效
标题翻译：用于在具有电感耦合等离子体的室中的溅射期间增强侧壁覆盖度的方法和装置
公开(公告)号：US06451179B1
公开(公告)日：2002-09-17
申请号：US08789960
申请日：1997-01-30
申请人： Zheng Xu , Gongda Yao
发明人： Zheng Xu , Gongda Yao
IPC分类号： C23C1434
CPC分类号： C23C14/345 , C23C14/046 , C23C14/165 , C23C14/35 , C23C14/358 , H01J37/321 , H01J37/34 , H01L21/76877
摘要： Increased sidewall coverage in a wetting layer for a substrate via or trench is achieved in an inductively coupled plasma chamber by sputtering relatively pure aluminum.
摘要翻译：通过溅射相对纯的铝，在电感耦合等离子体室中实现用于衬底通孔或沟槽的润湿层中增加的侧壁覆盖。

38. 发明授权

US06383915B1 Tailoring of a wetting/barrier layer to reduce electromigration in an aluminum interconnect 失效
标题翻译：调整润湿/阻隔层以减少铝互连中的电迁移
公开(公告)号：US06383915B1
公开(公告)日：2002-05-07
申请号：US09244280
申请日：1999-02-03
申请人： Jingang Su , Gongda Yao , Zhang Xu , Fusen Chen
发明人： Jingang Su , Gongda Yao , Zhang Xu , Fusen Chen
IPC分类号： H01L214763
CPC分类号： H01L21/76846 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： We have discovered particular wetting layer or wetting/barrier layer structures which enable depositing of overlying aluminum interconnect layers having texturing sufficient to provide a Rocking Curve FWHM angle &thgr; of about 1° or less. The aluminum interconnect layer exhibiting a Rocking Curve FWHM angle &thgr; of about 1° or less exhibits excellent electromigration properties. In addition when the aluminum layer is subsequently pattern etched, the sidewalls of the etched aluminum pattern exhibit a surprising reduction in pitting compared with pattern etched aluminum layers exhibiting higher Rocking Curve FWHM angles.
摘要翻译：我们已经发现了特定的润湿层或润湿/阻挡层结构，其能够沉积具有足以提供约1°或更小的摇摆曲线FWHM角度θ的<111>纹理的上覆铝互连层。表现出约1°或更小的摇摆曲线FWHM角度θ的铝互连层表现出优异的电迁移性能。此外，当铝层随后进行图案蚀刻时，与显示较高的摇摆曲线FWHM角度的图案蚀刻的铝层相比，蚀刻的铝图案的侧壁显示出令人惊讶的点蚀减少。

39. 发明授权

US6139698A Method and apparatus for reducing the first wafer effect 失效
标题翻译：降低第一晶片效应的方法和装置
公开(公告)号：US6139698A
公开(公告)日：2000-10-31
申请号：US794033
申请日：1997-02-03
申请人： Hougong Wang , Gongda Yao
发明人： Hougong Wang , Gongda Yao
IPC分类号： H01L21/285 , H01L21/02 , H01L21/203 , H01L21/3205 , H01L21/768 , C23C14/34
CPC分类号： H01L21/02 , H01L21/768
摘要： A method and apparatus are provided for reducing and eliminating the First Wafer Effect. Specifically, in a method, or system that employs a separate hot chamber for hot deposition of material that may result in the First Wafer Effect (FWE material), a cold layer of the FWE material is deposited within the hot deposition chamber prior to deposition of the hot FWE material layer.
摘要翻译：提供了一种用于减少和消除第一晶片效应的方法和装置。具体地说，在使用可能导致第一晶片效应（FWE材料）的材料的热沉积的单独的热室的方法或系统中，FWE材料的冷层在沉积之前沉积在热沉积室内热FWE材料层。

40. 发明授权

US06939801B2 Selective deposition of a barrier layer on a dielectric material 失效
标题翻译：阻挡层在电介质材料上的选择性沉积
公开(公告)号：US06939801B2
公开(公告)日：2005-09-06
申请号：US10319788
申请日：2002-12-13
申请人： Hua Chung , Ling Chen , Vincent W. Ku , Michael X. Yang , Gongda Yao
发明人： Hua Chung , Ling Chen , Vincent W. Ku , Michael X. Yang , Gongda Yao
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45525 , H01L21/28562 , H01L21/76844
摘要： A method to selectively deposit a barrier layer on dielectric material that surrounds one or more metal interconnects on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the dielectric material formed on the substrate in a process chamber.
摘要翻译：公开了一种选择性地将阻挡层沉积在围绕衬底上的一个或多个金属互连的电介质材料上的方法。使用包括预定数量的沉积循环，然后进行吹扫步骤的循环沉积工艺，将选择性地沉积在金属膜上。每个沉积循环包括在处理室中在形成在基底上的电介质材料上交替地吸附含难熔金属的前体和还原气体。

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