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31. 发明专利

JP2000109396A SILICON SEMICONDUCTOR SUBSTRATE AND ITS PRODUCTION 失效
公开(公告)号：JP2000109396A
公开(公告)日：2000-04-18
申请号：JP8491699
申请日：1999-03-26
申请人： NIPPON STEEL CORP , NSC ELECTRON CORP
发明人： HASEBE MASAMI , NAKAI KATSUHIKO , IWASAKI TOSHIO , OHASHI WATARU , IKARI ATSUSHI
IPC分类号： H01L21/20 , C30B29/06 , H01L21/322
摘要： PROBLEM TO BE SOLVED: To reduce the occurrence defects as much as possible in an epitaxial layer and in the region near the interface of the epitaxial layer and a substrate wafer and to add excellent gettering characteristics, by using a silicon wafer containing a specified amt. of nitrogen as the substrate wafer and depositing a silicon single crystal layer by epitaxial method on the surface of the wafer. SOLUTION: An amt. of nitrogen in the substrate wafer is specified to 1.0×1012 to 1.0×1016 atoms/cm3. The silicon wafer 1a satisfying the above condition is produced by Czochralski (CZ) method or magnetic field-applied CZ method by using fused silicon containing 1.0×1016 to 1.5×1019 atoms/cm3 nitrogen. By incorporating a specified amt. of nitrogen, the density of point defects during growing crystals and aggregation behavior of the crystals are changed to suppress production of minute defects or void defects in the epitaxial layer 3 and in the region 2, 1b near the interface. Further, proper crystal defects are produced in an IG layer 1d to enhance the gettering ability.

32. 发明专利

JPH11106282A SILICONE SINGLE CRYSTAL, ITS PRODUCTION AND ITS EVALUATION 失效
公开(公告)号：JPH11106282A
公开(公告)日：1999-04-20
申请号：JP28465897
申请日：1997-10-01
申请人： NIPPON STEEL CORP , NSC ELECTRON CORP
发明人： NAKAI KATSUHIKO , HASEBE MASAMI , OTA KUNITERU , ISHIZAKA KAZUNORI , IWASAKI TOSHIO
IPC分类号： G01N21/88 , C30B15/00 , C30B29/06 , G01N21/00 , G01N21/94 , G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To obtain a single crystal good in the breakdown strength characteristics of an oxide membrane, and the leak characteristics of a p-n junction by regulating the density of COP having a size not less than a specific value measured by a surface foreign body meter so as to be not larger than a specified number over the whole surface of a wafer, and the size of a dislocation cluster so as to be not larger than the specific value over the whole surface of the wafer. SOLUTION: This single crystal is the one having /cm density of COP with >=0.11 μm size measured by a surface foreign body meter over the whole surface of a wafer, μm/cm product of the average value of the dislocation cluster sizes and the density of the dislocation clusters. The single crystal is produced by a Czochralski process by growing the single crystal under a condition of / deg.C/min) V/G [V(mm/min) is a crystal growing rate; G ( deg.C/mm) is a temperature gradient between a silicon molten liquid and a crystal interface in the crystal growing direction] at

33. 发明专利

JPH1160379A PRODUCTION OF NON-DISLOCATION SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH1160379A
公开(公告)日：1999-03-02
申请号：JP14307298
申请日：1998-05-25
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： IWASAKI TOSHIO , FUJIMOTO SHINICHI , ISOMURA CHU , ISHIDA YOSHISADA , TAMURA MICHIHARU , IKARI ATSUSHI
IPC分类号： C30B15/00 , C30B15/36 , C30B29/06 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a process for producing a non-dislocation silicon single crystal capable of safely producing the non-dislocation silicon single crystal of a large diameter and large weight with good reproducibility while preventing the occurrence of a crystal falling accident in consequence of the breakdown of a neck part by the large weight at the time of producing the non-dislocation silicon single crystal by a Czochralski method. SOLUTION: The main body part of the non-dislocation silicon single crystal is grown by immersing a seed crystal into a silicon melt, then pulling up the seed crystal without executing necking. The seed crystal to be used is the non- dislocation silicon single crystal. At this time, the max. length in the horizontal direction of the part of the seed crystal immersed into the silicon melt at the point of the time the immersion of the seed crystal into the silicon melt is completed is >=5 mm. The immersion rate of the seed crystal into the silicon melt is

34. 发明专利

JPH08208375A SILICON SINGLE CRYSTAL AND ITS PRODUCTION 失效
公开(公告)号：JPH08208375A
公开(公告)日：1996-08-13
申请号：JP1006795
申请日：1995-01-25
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： IWASAKI TOSHIO , HASEBE MASAMI , HAGA HIROTSUGU , OKUBO MASAMICHI
IPC分类号： C30B15/00 , C30B15/20 , C30B29/06 , H01L21/208
摘要： PURPOSE: To obtain a silicon single crystal which is produced by a Czochralski method and is excellent in device characteristics as represented by the voltage resistance characteristics of an insulating oxidized film and a process for producing the same. CONSTITUTION: A slow cooling temp. region is changed according to a change in the crystal producing speed in the method for slowly cooling the silicon single crystal under production in the certain temp. region among the methods for producing the silicon single crystal by the Czochralski method. More specifically, T is set at 250xS/3+830

35. 发明专利

JPH0741400A METHOD FOR MEASURING SEMICONDUCTOR CRYSTAL 失效
公开(公告)号：JPH0741400A
公开(公告)日：1995-02-10
申请号：JP18854293
申请日：1993-07-29
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： IWASAKI TOSHIO , HAGA HIROTSUGU , NAKASHIZU TSUNEO , KOJIMA KIYOSHI
IPC分类号： C30B29/06 , C30B33/02 , G01N25/00 , G01N25/72 , H01L21/324 , H01L21/477
摘要： PURPOSE:To evaluate the voltage withstand characteristics attributable to the crystallinity of an insulating oxide film on the surface of a silicon single crystal without measuring the withstand voltage by evaluating the characteristics by the measurement of the crystal defect density of the single crystal. CONSTITUTION:The crystal defect density in a silicon single crystal is measured to evaluate the voltage withstand characteristic of an insulating oxide film. The silicon single crystal is previously heat-treated at 1250-1325 deg.C and then cooled down to a specified temp. at the rate of 1325 deg.C and then cooled down to a specified temp. at the rate of

36. 发明专利

JPH0741397A DEVICE FOR HEAT TREATMENT OF SEMICONDUCTOR 失效
公开(公告)号：JPH0741397A
公开(公告)日：1995-02-10
申请号：JP18853593
申请日：1993-07-29
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： IWASAKI TOSHIO , HAGA HIROTSUGU , NAKASHIZU TSUNEO , KOJIMA KIYOSHI
IPC分类号： C30B33/02 , H01L21/324 , H01L21/477
摘要： PURPOSE:To provide a heat treating device for semiconductors in which a semiconductor crystal can be subjected to multistage heat treatment at a high temp., a block sample can be heat treated, and rapid heating and rapid cooling can be done. CONSTITUTION:This heat treating device 1 for semiconductors is equipped with a silicon carbide heater 5 as a heat generator and a silicon carbide tube 3 as a reaction tube. In this device, the max. temp. for heat treatment of a sample is >=1400 deg.C with >=50mm soaking length, the controllable cooling rate is 0-30 deg.C/min in 1200-1400 deg.C temp. range and 0-25 deg.C/min in 100-1200 deg.C temp. range, and the controllable temp. rising rate is 0-15 deg.C/min in 1200-1400 deg.C temp. range.

37. 发明专利

JPH06298592A APPARATUS FOR PULLING UP SINGLE CRYSTAL 失效
公开(公告)号：JPH06298592A
公开(公告)日：1994-10-25
申请号：JP7466193
申请日：1993-03-31
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： NAKASHIZU TSUNEO , IWASAKI TOSHIO , OKUBO MASAMICHI , KOJIMA KIYOSHI
IPC分类号： C30B15/00 , C30B15/14 , H01L21/208
摘要： PURPOSE:To enable the required temperature gradient control in respective sites in a pulled up single crystal and reduce the occurrence of defects in the crystal by installing a radiant heat shielding structure of a specific structure so as to surround the periphery of the pulled up single crystal. CONSTITUTION:An inverted conical radiant heat shielding structure 4 is installed so as to surround the periphery of a pulled up single crystal (C). Furthermore, the radiant heat shielding structure 4 is constructed from a reflecting plate attached to the base and plural ring-shaped members 41 to 44, superposed and arranged in plural stages in the upper part thereof. Granular polysilicon which is a heat insulating material is filled in the respective ring-shaped members 41 to 44 at a varying filling degree to change the heat insulating ability of the ring-shaped members 41 to 44 in the respective stages at each height level. An area having the highest temperature gradient is formed in a part (CA) just on a pulling up area of the single crystal (C) with the ring-shaped member 41 in the lowermost stage having the most enhanced heat insulating ability. An annealing area is formed in a part (CB) of an intermediate area with the ring-shaped members 42 and 43 reduced in the heat insulating ability in the middle stage in the upper part of the part (CA).

38. 发明专利

JPH06279168A APPARATUS FOR PRODUCTION OF SINGLE CRYSTAL 失效
公开(公告)号：JPH06279168A
公开(公告)日：1994-10-04
申请号：JP6516593
申请日：1993-03-24
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： IWASAKI TOSHIO , NAKASHIZU TSUNEO , KOJIMA KIYOSHI , NAITO SHUNTA , TAKAO SHIGEYOSHI
IPC分类号： C30B15/00 , C30B15/14
摘要： PURPOSE:To improve homogeneity by liftably maintaining a heat shielding body which is an inverted circular conical tubular body and displacing the position of this heat shielding body in association with the fluctuation in a melt boundary according to the growth progression of a single crystal, thereby maintaining the specified conditions for growing the single crystal. CONSTITUTION:A prescribed amt. of raw materials, such as polycrystalline Si and dopant, are loaded into a quartz crucible 4 and are heated by a heater 5 for heating to form a melt 9. The heat shielding body 17 is displaced by a variable supporting body 19 until the boundary of the melt 9 and the bottom end of the heat shielding body 17 are maintained at a prescribed spacing and thereafter, a seed crystal 12 is immersed into the melt 9 and is pulled up while the crucible 4 and the seed crystal 12 are kept rotated, by which a single crystal ingot 10 is grown at the bottom end of the seed crystal 12. The amt. of the melt 9 decreases and the boundary falls as the growth of the single crystal ingot 10 progresses and, therefore, the heat shielding body 17 is lowered to maintain the specified spacing between the boundary of the melt 9 and the bottom end of the heat shielding body 17 while the displacement is controlled by driving the lifting mechanism of the variable supporting body 19, by which the conditions for growing the single crystal are maintained constant and the homogeneous single crystal ingot 10 having the high quality is obtd.

39. 发明专利

JPH06271396A APPARATUS FOR PRODUCTION OF SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH06271396A
公开(公告)日：1994-09-27
申请号：JP6192393
申请日：1993-03-22
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： IWASAKI TOSHIO , NAKASHIZU TSUNEO , KOJIMA KIYOSHI , NAITO SHUNTA , TAKAO SHIGEYOSHI
IPC分类号： C30B15/14 , C30B27/02 , C30B29/06
摘要： PURPOSE:To obtain high quality by providing a cooling cylinder arranged around a single crystal of the prescribed apparatus with a moving mechanism for operating opening and closing angles and blowing an inert gas between this cooling cylinder and the single crystal, thereby adjusting cooling. CONSTITUTION:A seed crystal 12 mounted at the front end of a pulling up wire 14 is immersed into a melt 9 obtd. by loading a raw material, such as polycrystalline Si, into a quartz crucible 4 and melting this material with a heater 5 and is pulled up while the crucible 4 and the seed crystal 12 are kept rotated, by which a single crystal ingot 10 is grown at the bottom end of the seed crystal 12. Ar or the like is admitted from an inert gas introducing port 15 on the wall surface of a pulling up chamber 2b to form gaseous flow in the spacing between the inner peripheral surface, etc., of the cooling cylinder 21 and the ingot 10 from the chamber 2b. This gaseous flow is then regulated by operating the moving mechanism for the opening and closing angles of a hoisting type consisting of the cooling cylinders 21a to c, by which the silicon single crystal is produced while the heat history of the single crystal is controlled.

40. 发明专利

JPH0517292A METHOD FOR COOLING SILICON 失效
公开(公告)号：JPH0517292A
公开(公告)日：1993-01-26
申请号：JP19112391
申请日：1991-07-05
申请人： NIPPON STEEL CORP
发明人： IWASAKI TOSHIO , HAGA HIROTSUGU
IPC分类号： C30B29/06
摘要： PURPOSE:To provide the method for cooling FZ silicon which decreases the concentration defects of this silicon and lessens element deterioration and to prevent or lessen the generation of the defects by a heat treatment during the production process of LSIs. CONSTITUTION:The above-mentioned purposes are achieved by the method for cooling the silicon consisting in heating the single crystal silicon produced by an FZ method to >=600 deg.C, then slowly cooling the silicon crystal at

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