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    • 32. 发明申请
    • METHOD FOR ISSUING PAGING MESSAGES, AND MSC/VLR
    • 发送寻呼消息的方法和MSC / VLR
    • US20080032715A1
    • 2008-02-07
    • US11837167
    • 2007-08-10
    • Yongli JiaHao Zhang
    • Yongli JiaHao Zhang
    • H04Q7/22H04Q7/20
    • H04W68/12
    • The embodiments of the present invention disclose a method for issuing paging messages and an MSC/VLR, the method includes: determining types of networks terminating the process. if the MS only accesses a 2G network; issuing, by the MSC/VLR, paging messages on an RNC, and terminating the process, if the MS only accesses a 3G network; and issuing, by the MSC/VLR, paging messages on both the BSC and RNC, if the MS accesses both the 2G network and the 3G network. According to the embodiments of the present invention, the MSC/VLR can choose to issue paging messages on the BSC or the RNC separately or on both the BSC and the RNC, since it can determine the types of networks accessed by the MS. Thus, unnecessary paging messages issued on the BSC same time, a great deal of radio paging channel resources on the BSC or the RNC is saved, which greatly reduces effects on the process of paging other MSs.
    • 本发明的实施例公开了一种用于发布寻呼消息和MSC / VLR的方法,所述方法包括:确定终止该过程的网络的类型。 如果MS仅访问2G网络; 如果MS仅访问3G网络,则由MSC / VLR发出RNC上的寻呼消息并终止该过程; 并且如果MS访问2G网络和3G网络,则由MSC / VLR发送BSC和RNC两者上的寻呼消息。 根据本发明的实施例,MSC / VLR可以选择在BSC或RNC上单独或者在BSC和RNC上发布寻呼消息,因为它可以确定由MS接入的网络的类型。 因此,在BSC同时发出的不必要的寻呼消息被保存在BSC或RNC上的大量无线寻呼信道资源,这大大降低了对寻呼其他MS的处理的影响。
    • 33. 发明授权
    • Dissolvable backing layer for use with a transmucosal delivery device
    • 用于经粘膜递送装置的可溶性背衬层
    • US07306812B2
    • 2007-12-11
    • US10841893
    • 2004-05-07
    • Hao Zhang
    • Hao Zhang
    • A61F13/00A61F2/00
    • A61K9/006A61K9/7007
    • A dissolvable backing layer for use with transmucosal drug delivery devices includes a dissolvable hydrophilic region and a non-hydrophilic region that inhibits or slows migration of water, drugs, other active agents, or other molecules through the backing layer. The non-hydrophilic region can be a disperse phase of gaseous voids, droplets of a hydrophobic liquid, solid particles of a hydrophobic material, or water insoluble particles that are not necessarily hydrophobic. In the alternative, the non-hydrophilic region may comprise a continuous layer or component that is readily dispersible upon dissolving of the hydrophilic region. The backing layers may be used within any transmucosal delivery device used to delivery drugs or other active agents across a mucosal surface.
    • 用于经粘膜药物递送装置的可溶解背衬层包括可溶性亲水区域和非亲水区域,其通过背衬层抑制或减缓水,药物,其它活性剂或其它分子的迁移。 非亲水区域可以是气态空隙的分散相,疏水液体的液滴,疏水性材料的固体颗粒或不一定是疏水性的水不溶性颗粒。 在替代方案中,非亲水区域可以包括在亲水区域溶解时容易分散的连续层或组分。 背衬层可以用于穿过粘膜表面递送药物或其它活性剂的任何经粘膜递送装置。
    • 35. 发明授权
    • Dissolvable backing layer for use with a transmucosal delivery device
    • 用于经粘膜递送装置的可溶性背衬层
    • US07276246B2
    • 2007-10-02
    • US10841892
    • 2004-05-07
    • Hao Zhang
    • Hao Zhang
    • A61F13/00A61F2/00
    • A61K9/7007A61K9/006
    • A water-dissolvable drug delivery device designed so as to reliably maintain a drug or active agent within a defined region against a mucosal surface. The drug delivery device comprises a water-dissolvable backing layer, an adhesive layer adjacent to at least a portion of the backing layer, and an active layer that is circumscribed by the backing layer and adhesive layer. The backing layer may optionally include a water-dissolvable hydrophilic region and a non-hydrophilic region at least partially encapsulated within the hydrophilic region that inhibits migration of water, drugs, or other active agents through the backing layer. The adhesive layer may be water-activated or it may have a peelable cover layer that, when removed, exposes the adhesive material. The active layer may comprise any drug or other active agent, either alone or in combination with (i) an enhancer that increases the ability of the drug or other active agent to diffuse through a mucosal membrane and/or (ii) a matrix material such as an alginate to hold the active layer together.
    • 一种可溶于水的药物递送装置,其被设计成可靠地将药物或活性剂保持在限定区域内的粘膜表面。 药物递送装置包括可溶于水的背衬层,与背衬层的至少一部分相邻的粘合剂层和由背衬层和粘合剂层限定的活性层。 背衬层可以任选地包括至少部分地包封在亲水区域内的水溶性亲水区域和非亲水区域,其抑制水,药物或其它活性剂通过背衬层的迁移。 粘合剂层可以是水活化的,或者其可以具有可剥离的覆盖层,其在被去除时暴露粘合剂材料。 活性层可以包括任何药物或其它活性剂,单独或与(i)增强药物或其它活性剂扩散通过粘膜的能力的增强剂和/或(ii)基质材料 作为将活性层保持在一起的藻酸盐。
    • 36. 发明申请
    • Method and apparatus for interfacing and managing NAND flash memory
    • 用于连接和管理NAND闪存的方法和装置
    • US20070118682A1
    • 2007-05-24
    • US11421070
    • 2006-05-31
    • Hao ZhangDaBei Shi
    • Hao ZhangDaBei Shi
    • G06F12/00
    • G06F13/1694G11C16/20
    • Techniques for providing a NAND flash memory interface being compatible with various NAND flash memories and minimizing the impact on an embedded microprocessor at the same time are disclosed. According to one aspect of the techniques, a NAND flash memory interface is provided for coupling to various types of NAND flash memories. The NAND flash memory interface comprises a protocol selection unit and a waveform generation unit. The protocol selection unit is provided for selecting adequate interface protocols for a NAND flash memory coupled thereto according to type parameters of the coupled NAND flash memory. The waveform generation unit is provided for generating an interface time sequence for operating the coupled NAND flash memory according to the interface protocol selected by the protocol selection unit.
    • 公开了用于提供与各种NAND闪速存储器兼容并且最小化对嵌入式微处理器的影响的NAND闪存接口的技术。 根据该技术的一个方面,提供NAND闪存接口用于耦合到各种类型的NAND闪速存储器。 NAND闪存接口包括协议选择单元和波形生成单元。 提供协议选择单元,用于根据耦合的NAND闪速存储器的类型参数为与其耦合的NAND闪速存储器选择足够的接口协议。 提供波形生成单元,用于根据由协议选择单元选择的接口协议生成用于操作耦合的NAND闪速存储器的接口时间序列。
    • 37. 发明申请
    • Structure and method of measuring the capacitance
    • 测量电容的结构和方法
    • US20070029575A1
    • 2007-02-08
    • US11195633
    • 2005-08-03
    • Hao ZhangYuan-Wei ZhengHui-Fang HsuJuan-Li Liu
    • Hao ZhangYuan-Wei ZhengHui-Fang HsuJuan-Li Liu
    • H01L27/10H01L21/82
    • H01L27/112
    • The structure and method of measuring the capacitance comprising a first buried doped area and a heavily doped area in a semiconductor substrate. The heavily doped area is parallel to the buried doped area. Several second buried doped areas, the first oxide layers and the second oxide layers are formed in the semiconductor substrate. Any of the second buried doped areas is perpendicular to the first buried doped area. One end of the second buried doped area is connected to the first buried doped area, and another end is connected to the heavily doped area. Any of the first oxide layers is overlaid on the second buried doped area. Any of the second oxide layers is placed between any two first oxide layers, and the thickness of the second oxide layer is thinner than the thickness of the first oxide layer. At least two first and several second polysilicon rows are formed on the semiconductor substrate, and wherein two first polysilicon rows are respectively placed on two sides of the second buried doped areas. Any of the second polysilicon rows is perpendicular to the first polysilicon row therein. One end of each of the second polysilicon rows is not connected to two fist polysilicon rows. The structure of the present invention is applied to obtain the individual capacitance in relation to the word line.
    • 测量电容的结构和方法包括半导体衬底中的第一掩埋掺杂区域和重掺杂区域。 重掺杂区域平行于埋入掺杂区域。 几个第二掩埋掺杂区域,第一氧化物层和第二氧化物层形成在半导体衬底中。 第二掩埋掺杂区域中的任一个垂直于第一掩埋掺杂区域。 第二掩埋掺杂区域的一端连接到第一掩埋掺杂区域,另一端连接到重掺杂区域。 任何第一氧化物层被覆盖在第二掩埋掺杂区域上。 任何第二氧化物层被放置在任何两个第一氧化物层之间,并且第二氧化物层的厚度比第一氧化物层的厚度薄。 在半导体衬底上形成至少两个第一和多个第二多晶硅行,并且其中两个第一多晶硅行分别放置在第二掩埋掺杂区的两侧。 任何第二多晶硅行垂直于其中的第一多晶硅行。 每个第二多晶硅行的一端不连接到两个第一多晶硅行。 应用本发明的结构来获得相对于字线的单独电容。
    • 39. 发明授权
    • Method for reducing the oxygen and oxide content in cobalt to produce cobalt sputtering targets
    • 减少钴中的氧和氧化物含量以产生钴溅射靶的方法
    • US06827759B2
    • 2004-12-07
    • US10343286
    • 2003-01-29
    • Hao Zhang
    • Hao Zhang
    • C22C1907
    • C23C14/3414C22C1/02
    • The present invention relates to producing cobalt having a low oxygen and a low oxide inclusion content for use as a sputter target thereby reducing the arcing and metal defects during sputtering commonly associated with high-oxygen cobalt sputter targets. Notably, the method for reducing the oxygen content and the oxide inclusion content in cobalt are separate processes which may be combined in successive order to procuce a low-oxygen cobalt sputter target having a low oxide inclusion content. The reduction in oxygen content preferably is performed prior to reducing the oxide inclusion content. Accordingly, the artisan will appreciate that one process can be performed without the other depending upon whether a reduction in oxygen or oxide inclusions is preferred in a desired cobalt sputter target.
    • 本发明涉及生产具有低氧和低氧化物夹杂物含量的钴,用作溅射靶,从而减少通常与高氧钴溅射靶相关的溅射和金属缺陷。 值得注意的是,用于降低钴中的氧含量和氧化物夹杂物含量的方法是分开的方法,其可以连续顺序组合以制备具有低氧化物夹杂物含量的低氧钴溅射靶。 氧含量的降低优选在减少氧化物夹杂物含量之前进行。 因此,本领域技术人员将理解,一个方法可以在不需要另外的方法的情况下执行,这取决于在期望的钴溅射靶中是否优选氧或氧化物夹杂物的减少。