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31. 发明授权

US5963572A Semiconductor laser device and manufacturing method thereof 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US5963572A
公开(公告)日：1999-10-05
申请号：US773346
申请日：1996-12-26
申请人： Ryoji Hiroyama , Takahiro Uetani , Kiyoshi Oota , Koji Komeda , Masayuki Shono , Akira Ibaraki , Keiichi Yodoshi
发明人： Ryoji Hiroyama , Takahiro Uetani , Kiyoshi Oota , Koji Komeda , Masayuki Shono , Akira Ibaraki , Keiichi Yodoshi
IPC分类号： H01S5/22 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/2206 , H01S5/222
摘要： A semiconductor laser device including an n-type cladding layer, an active layer, a p-type cladding layer having a ridge portion, an n-type optical confinement layer formed on the flat portion and side surfaces of the ridge portion of the p-type cladding layer, and an n-type current blocking layer formed on the n-type optical confinement layer in this order. The optical confinement layer is composed of a low resistivity layer doped with n-type impurity, which has a smaller refractive index than the p-type cladding layer and a bandgap energy greater than the energy of lasing light. The optical confinement layer has an impurity concentration of 5.times.10.sup.7 cm.sup.-3 or less. The n-type current blocking layer has a thickness of 0.4 .mu.m or less.
摘要翻译：一种半导体激光装置，包括n型包层，有源层，具有脊部的p型包覆层，形成在平坦部分上的n型光限制层和p型包层，型包层，以及n型光限制层上形成的n型电流阻挡层。光限制层由掺杂有n型杂质的低电阻率层构成，其折射率比p型覆层更小，并且带隙能量大于激光的能量。光学限制层的杂质浓度为5×10 7 cm -3以下。 n型电流阻挡层的厚度为0.4μm以下。

32. 发明授权

US5619519A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5619519A
公开(公告)日：1997-04-08
申请号：US372147
申请日：1995-01-13
申请人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
发明人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
IPC分类号： H01S5/22 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/32 , H01S5/32325 , H01S2304/04 , H01S5/22 , H01S5/3202 , H01S5/34326 , Y10S148/064 , Y10S148/11 , Y10S438/973
摘要： A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a direction.
摘要翻译： AlGaInP系统的半导体激光器件包括GaAs衬底，并且衬底的表面在<011>方向上从{100}面倾斜5°或更多。

33. 发明授权

US07038247B2 Light-emitting device with built-in microlens and method of forming the same 失效
标题翻译：具有内置微透镜的发光装置及其形成方法
公开(公告)号：US07038247B2
公开(公告)日：2006-05-02
申请号：US10636736
申请日：2003-08-08
申请人： Keiji Tanaka , Masayuki Shono
发明人： Keiji Tanaka , Masayuki Shono
IPC分类号： H01L29/22
CPC分类号： G02B6/4206 , G02B6/4203 , H01L33/44 , H01L33/58 , H01S5/0267 , H01S5/4025 , H01S5/4087
摘要： A light-emitting device with a built-in microlens having a microlens integrated with a semiconductor light-emitting device causing no misalignment of an optical axis is provided. This light-emitting device with a built-in microlens comprises a semiconductor light-emitting device and a microlens, integrated with the semiconductor light-emitting device, formed through light emitted from the semiconductor light-emitting device. Thus, the optical axis of the microlens is automatically aligned in formation of the microlens.
摘要翻译：提供具有内置微透镜的发光器件，其具有与不引起光轴错位的半导体发光器件集成的微透镜。具有内置微透镜的发光装置包括通过从半导体发光器件发射的光形成的与半导体发光器件集成的半导体发光器件和微透镜。因此，微透镜的光轴在微透镜的形成中自动对准。

34. 发明授权

US06909687B2 Optical pickup with a diffraction element consist of six regions providing spatial variation corresponding to a focas state 失效
$Optical pickup with a diffraction element consist of six regions providing spatial variation corresponding to a focas state$
标题翻译：具有衍射元件的光学拾取器由提供对应于焦点状态的空间变化的六个区域组成
公开(公告)号：US06909687B2
公开(公告)日：2005-06-21
申请号：US09818653
申请日：2001-03-28
申请人： Kazushi Mori , Atsushi Tajiri , Toyozo Nishida , Yasuaki Inoue , Yasuhiro Ueda , Masayuki Shono , Minoru Sawada
发明人： Kazushi Mori , Atsushi Tajiri , Toyozo Nishida , Yasuaki Inoue , Yasuhiro Ueda , Masayuki Shono , Minoru Sawada
IPC分类号： G11B7/09 , G11B7/12 , G11B7/13 , G11B7/135 , G11B7/0065
CPC分类号： G11B7/131 , G11B7/0903 , G11B7/0916 , G11B7/0943 , G11B7/123 , G11B7/1353 , G11B7/1381
摘要： A six-segment holographic surface is divided into regions by dividing lines. A four-segment photodetection part is divided into four photodetection parts equal in area by a section line substantially parallel to the radial direction of an optical disk and a section line orthogonal thereto. A main light beam diffracted in the regions of the six-segment holographic surface are condensed as spots at positions apart from each other on opposite sides on a section line of the four photodetection parts, and the main beam diffracted in the regions is condensed as spots in the center of the photodetection parts of the four-segment photodetection part.
摘要翻译：六段全息面由分割线划分成多个区域。四段光电检测部分通过基本上平行于光盘的径向的截面线和与其正交的截面线被划分为四个光电检测部分，其面积相等。在六段全息表面的区域中衍射的主光束在四个光检测部的截面线的相对侧彼此分离的位置被冷凝，并且在该区域中衍射的主光束被聚光为斑点在四段光电检测部分的光电检测部分的中心。

35. 发明申请

US20050046946A1 Wave plate and optical device using the same 失效
标题翻译：波片和光学装置使用相同
公开(公告)号：US20050046946A1
公开(公告)日：2005-03-03
申请号：US10927232
申请日：2004-08-27
申请人： Kazushi Mori , Shingo Kameyama , Hitoshi Hirano , Koutarou Furusawa , Koji Tominaga , Masayuki Shono
发明人： Kazushi Mori , Shingo Kameyama , Hitoshi Hirano , Koutarou Furusawa , Koji Tominaga , Masayuki Shono
IPC分类号： G02B5/18 , G02B5/30
CPC分类号： G02B5/3083 , G02B5/1833 , G02B5/1852 , G02B5/1857 , G02B5/1871
摘要： The present invention provides a wave plate capable of obtaining preferable phase conversion characteristic over a wide wavelength range. The wave plate includes an aluminum oxide film having linear grating groove patterns. The period L (μm) and the duty ratio De of the grating groove patterns are set at values within the first range specified by the following four formulas: L≦0.65 L≧2×10−14e31.263De L≦6.0317De2−10.352De+5.0516 (De−0.85)2/0.442+(L−0.41)2/0.392≦1
摘要翻译：本发明提供能够在宽波长范围内获得优选的相变特性的波片。波片包括具有线性格栅凹槽图案的氧化铝膜。光栅槽图案的周期L（母）和占空比De被设定在由以下四个公式指定的第一范围内的值：L <= 0.65 L> = 2×10 14 e <31.263> De L < = 6.0317De <2> -10.352De + 5.0516（De-0.85）2 /0.44 2 +（L-0.41）2 /0.39 2 <= 1

36. 发明授权

US6144623A Optical pickup apparatus and optical recording medium drive employing the same 失效
标题翻译：光拾取装置和采用该拾取装置的光记录介质驱动装置
公开(公告)号：US6144623A
公开(公告)日：2000-11-07
申请号：US14980
申请日：1998-01-28
申请人： Yasuaki Inoue , Takenori Goto , Atsushi Tajiri , Kazushi Mori , Minoru Sawada , Akira Ibaraki , Masayuki Shono
发明人： Yasuaki Inoue , Takenori Goto , Atsushi Tajiri , Kazushi Mori , Minoru Sawada , Akira Ibaraki , Masayuki Shono
IPC分类号： G11B7/09 , G11B7/12 , G11B7/13 , G11B7/135 , G11B7/00
CPC分类号： G11B7/1353 , G11B7/123 , G11B7/131 , G11B7/0912
摘要： A transmission-type holographic optical element has a four-segment holographic surface divided into four regions of equal areas by virtual dividing lines which are perpendicular to each other. The first dividing line is at an angle with respect to the track direction of an optical disk and the second dividing line is at an angle with respect to the radial direction of the optical disk before tracking phase adjustment. The first dividing line coincides with the track direction of the optical disk and the second dividing line coincides with the radial direction of the optical disk after tracking phase adjustment. A four-segment photodetection part is divided into four photodetection parts of equal areas by a dividing line substantially parallel to the radial direction of the optical disk and a dividing line perpendicular thereto. Parts of a main beam diffracted in two regions located on first diagonal positions of the four-segment holographic surface are condensed as condensed spots on adjacent positions of the first dividing line of the four-segment photodetection part on opposite sides, and parts of the main beam diffracted in the remaining two regions located on second diagonal positions are condensed as condensed spots on separate positions of the second dividing line of the four-segment photodetection part on opposite sides.
摘要翻译：透射型全息光学元件具有通过彼此垂直的虚拟分割线被划分为相等面积的四个区域的四段全息表面。第一分割线相对于光盘的轨道方向成一定角度，并且第二分割线在跟踪相位调整之前相对于光盘的径向方向成一定角度。第一分割线与光盘的轨道方向一致，并且第二分割线在跟踪相位调整之后与光盘的径向一致。四段光电检测部分通过基本上平行于光盘的径向的分割线和与其垂直的划分线分成四个具有相等面积的光电检测部分。在四段全息表面的第一对角位置上的两个区域中衍射的主光束的部分在相对侧的四段光检测部分的第一分割线的相邻位置上被聚集为聚集点，主要部分在位于第二对角位置的剩余两个区域中衍射的光束在相对侧的四段光检测部分的第二分割线的分离位置上被冷凝为聚光点。

37. 发明授权

US5411915A Method of manufacturing a single crystal layers 失效
标题翻译：制造单晶层的方法
公开(公告)号：US5411915A
公开(公告)日：1995-05-02
申请号：US134293
申请日：1993-10-08
申请人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
发明人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
IPC分类号： H01S5/22 , H01S5/32 , H01S5/323 , H01S5/343 , H01L21/20
CPC分类号： B82Y20/00 , H01S5/32 , H01S5/32325 , H01S2304/04 , H01S5/22 , H01S5/3202 , H01S5/34326 , Y10S148/064 , Y10S148/11 , Y10S438/973
摘要： A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a direction.
摘要翻译： AlGaInP系统的半导体激光器件包括GaAs衬底，并且衬底的表面在<011>方向上从{100}面倾斜5°或更多。

38. 发明授权

US5016252A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5016252A
公开(公告)日：1991-05-14
申请号：US412786
申请日：1989-09-26
申请人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
发明人： Hiroki Hamada , Shoji Honda , Masayuki Shono , Takao Yamaguchi
IPC分类号： H01S5/22 , H01S5/32 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/32 , H01S5/32325 , H01S2304/04 , H01S5/22 , H01S5/3202 , H01S5/34326
摘要： A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a direction.
摘要翻译： AlGaInP系统的半导体激光器件包括GaAs衬底，并且衬底的表面在<011>方向上从{100}面倾斜5°或更多。

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