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1. 发明申请

US20110158273A1 SEMICONDUCTOR LASER DEVICE, OPTICAL PICKUP DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体激光器件，光学拾取器件和半导体器件
公开(公告)号：US20110158273A1
公开(公告)日：2011-06-30
申请号：US12980023
申请日：2010-12-28
申请人： Yoshio OKAYAMA , Yasunori Inoue , Takenori Goto , Kazushi Mori , Yuuki Ota , Naoteru Matsubara
发明人： Yoshio OKAYAMA , Yasunori Inoue , Takenori Goto , Kazushi Mori , Yuuki Ota , Naoteru Matsubara
IPC分类号： H01S5/02
CPC分类号： H01S5/02208 , B82Y20/00 , H01L24/97 , H01L2224/45144 , H01L2224/48091 , H01L2224/49175 , H01L2224/73265 , H01L2924/12043 , H01L2924/1461 , H01L2924/15788 , H01L2924/16195 , H01S5/0222 , H01S5/0224 , H01S5/02248 , H01S5/02276 , H01S5/02292 , H01S5/0683 , H01S5/34333 , H01S5/4031 , H01S5/4087 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser device includes a Si(100) substrate in which a recess having an opening and a bottom face surrounded by inner wall surfaces is formed, a semiconductor laser element placed on the bottom face, and a translucent sealing glass, mounted on top of the Si(100) substrate, which seals the opening. The laser light emitted from the semiconductor laser element is reflected by a metallic reflective film formed on the inner wall surface and then transmits through the sealing glass so as to be emitted externally.
摘要翻译：一种半导体激光器件包括：Si（100）衬底，其中形成具有由内壁表面包围的开口和底面的凹部，放置在底面上的半导体激光元件和安装在底面上的半透明密封玻璃 Si（100）衬底，其密封开口。从半导体激光元件发出的激光由形成在内壁面上的金属反射膜反射，然后通过密封玻璃透射从外部发射。

2. 发明授权

US07768204B2 Illumination device and manufacturing method thereof 有权
标题翻译：照明装置及其制造方法
公开(公告)号：US07768204B2
公开(公告)日：2010-08-03
申请号：US11710405
申请日：2007-02-26
申请人： Seiichi Tokunaga , Tatsuya Kunisato , Takenori Goto , Masayuki Hata
发明人： Seiichi Tokunaga , Tatsuya Kunisato , Takenori Goto , Masayuki Hata
IPC分类号： H01J1/62
CPC分类号： F21S8/00 , F21Y2105/10 , F21Y2105/12 , F21Y2113/13 , F21Y2115/10
摘要： Illumination device has a plurality of light emitting units, each with light emitting element and first fluorescent material region provided at a light emitting side of the light emitting element. A plurality of second fluorescent material regions are provided at the light emitting sides of respective light emitting units. Second fluorescent material regions having the same emission conversion property are respectively provided at the light emitting side of at least one light emitting unit having the same emission property among the plurality of light emitting units.
摘要翻译：照明装置具有多个发光单元，每个具有设置在发光元件的发光侧的发光元件和第一荧光体区域。在各发光单元的发光侧设置有多个第二荧光体区域。在多个发光单元中具有相同发光特性的至少一个发光单元的发光侧分别设置具有相同发光转换特性的第二荧光材料区域。

3. 发明授权

US07723738B2 Semiconductor light emitting element and semiconductor light emitting device 有权
标题翻译：半导体发光元件及半导体发光元件
公开(公告)号：US07723738B2
公开(公告)日：2010-05-25
申请号：US11442277
申请日：2006-05-30
申请人： Saburo Nakashima , Koutarou Furusawa , Takenori Goto
发明人： Saburo Nakashima , Koutarou Furusawa , Takenori Goto
IPC分类号： H01L29/205 , H01L33/00
CPC分类号： H01L33/60 , H01L24/32 , H01L33/20 , H01L33/483 , H01L2924/12041 , H01L2924/00
摘要： A semiconductor light emitting element includes a semiconductor layer which has an electrode on at least one principal surface and a supporting substrate which is bonded with the electrode by a conductive adhesive. One of the semiconductor layer and the supporting substrate includes a protruded surface protruding in one portion on the principal surface, the other includes a junction surface which opposes the protruded surface, the junction surface is bonded with the protruded surface with the electrode and the conductive adhesive interposed between the protruded surface and the junction surface, and the junction surface is larger in area than a region to be bonded with the protruded surface.
摘要翻译：半导体发光元件包括在至少一个主表面上具有电极的半导体层和通过导电粘合剂与电极接合的支撑衬底。半导体层和支撑基板中的一个包括在主表面上一个部分突出的突出表面，另一个包括与突出表面相对的接合面，接合表面与电极和导电粘合剂的突出表面接合插入在突出表面和接合面之间，并且接合面的面积大于与突出表面接合的区域。

4. 发明授权

US06914922B2 Nitride based semiconductor light emitting device and nitride based semiconductor laser device 失效
标题翻译：基于氮化物的半导体发光器件和氮化物基半导体激光器件
公开(公告)号：US06914922B2
公开(公告)日：2005-07-05
申请号：US09898043
申请日：2001-07-05
申请人： Nobuhiko Hayashi , Takenori Goto , Takashi Kano , Yasuhiko Nomura
发明人： Nobuhiko Hayashi , Takenori Goto , Takashi Kano , Yasuhiko Nomura
IPC分类号： H01L33/14 , H01L33/32 , H01S5/20 , H01S5/22 , H01S5/323 , H01S5/00 , H01L29/06 , H01L33/00
CPC分类号： H01S5/32341 , H01L33/14 , H01L33/32 , H01S5/2004 , H01S5/2218 , H01S5/2222 , H01S2301/18
摘要： A semiconductor laser device is constructed by stacking a buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, a light emitting layer, a p-AlGaN cladding layer, and a p-GaN contact layer in this order. A ridge portion comprising the p-GaN contact layer and the p-AlGaN cladding layer is formed, and the thickness of the p-AlGaN cladding layer in the ridge portion is less than 0.3 μm.
摘要翻译：半导体激光器件通过堆叠缓冲层，未掺杂的GaN层，n-GaN接触层，n-InGaN防裂层，n-AlGaN包层，发光层，p-AlGaN包层，和p-GaN接触层。形成包含p-GaN接触层和p-AlGaN包覆层的脊部，并且脊部中的p-AlGaN包层的厚度小于0.3μm。

5. 发明授权

US06850547B2 Nitride based semiconductor laser device and method of fabricating the same 失效
标题翻译：氮化物基半导体激光器件及其制造方法
公开(公告)号：US06850547B2
公开(公告)日：2005-02-01
申请号：US09888419
申请日：2001-06-26
申请人： Takenori Goto
发明人： Takenori Goto
IPC分类号： H01L21/205 , H01S5/02 , H01S5/022 , H01S5/028 , H01S5/042 , H01S5/16 , H01S5/223 , H01S5/323 , H01S5/343 , H01L27/15 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/028 , H01S5/0425 , H01S5/16 , H01S5/22 , H01S5/2231 , H01S5/34333
摘要： A semiconductor laser device is constructed by stacking an n-cladding layer, an n-optical guide layer, an MQW active layer, a p-cap layer, a p-optical guide layer, a p-cladding layer, an n-current blocking layer, and a p-contact layer in this order on one surface of a transparent substrate. A p electrode is formed on a predetermined region of the p-contact layer. An n electrode having a projected shape is formed on the other surface of the transparent substrate. In this case, a portion, where a projection of the n electrode is arranged, of the device corresponds to the front (a surface on the side of laser light emission) thereof.
摘要翻译：半导体激光器件通过堆叠n包层，n光导层，MQW有源层，p帽层，p导光层，p包覆层，n电流阻挡层层和p接触层，其顺序在透明基板的一个表面上。 p电极形成在p接触层的预定区域上。在透明基板的另一个表面上形成具有投影形状的n电极。在这种情况下，设置有n电极的突起的部分对应于其前面（激光发射侧的表面）。

6. 发明授权

US06212150B1 Optical pickup apparatus and optical recording medium drive employing the same including a first photo receiving element for detecting the state of light beam and a second photo receiving element for reproducing information 失效
标题翻译：采用该光拾取装置和光记录介质的驱动装置包括用于检测光束状态的第一光接收元件和用于再现信息的第二光接收元件
公开(公告)号：US06212150B1
公开(公告)日：2001-04-03
申请号：US09027717
申请日：1998-02-23
申请人： Yasuaki Inoue , Takenori Goto , Atsushi Tajiri , Kazushi Mori , Minoru Sawada , Akira Ibaraki
发明人： Yasuaki Inoue , Takenori Goto , Atsushi Tajiri , Kazushi Mori , Minoru Sawada , Akira Ibaraki
IPC分类号： G11B700
CPC分类号： G11B7/131 , G11B7/0903 , G11B7/0909 , G11B7/123 , G11B7/1353
摘要： First and second photodiodes are arranged on the upper surface of a stem, returned light beams diffracted in the + 1st order by a transmission type holographic optical element are received by the first photodiode, while returned light beams diffracted in the − 1st order are received by the second photodiode. The first photodiode has a plurality of light receiving regions, and respectively outputs a reproducing signal, a focus error signal and a tracking error signal on the basis of the returned light beams. On the other hand, the second photodiode has a single light receiving region, and outputs a reproducing signal on the basis of the returned light beams.
摘要翻译：第一和第二光电二极管布置在杆的上表面上，由透射型全息光学元件以+ 1次衍射的返回光束被第一光电二极管接收，而以-1次衍射的返回光束由第二个光电二极管。第一光电二极管具有多个光接收区域，并且基于返回的光束分别输出再现信号，聚焦误差信号和跟踪误差信号。另一方面，第二光电二极管具有单个光接收区域，并且基于返回的光束输出再现信号。

7. 发明授权

US5608752A Semiconductor laser device and method of designing the same 失效
标题翻译：半导体激光器件及其设计方法
公开(公告)号：US5608752A
公开(公告)日：1997-03-04
申请号：US430497
申请日：1995-04-28
申请人： Takenori Goto , Nobuhiko Hayashi , Teruaki Miyake , Mitsuaki Matsumoto , Kenichi Matsukawa , Daisuke Ide , Koutarou Furusawa , Akira Ibaraki , Keiichi Yodoshi , Tatsuya Kunisato
发明人： Takenori Goto , Nobuhiko Hayashi , Teruaki Miyake , Mitsuaki Matsumoto , Kenichi Matsukawa , Daisuke Ide , Koutarou Furusawa , Akira Ibaraki , Keiichi Yodoshi , Tatsuya Kunisato
IPC分类号： H01S5/00 , H01S5/065 , H01S5/223 , H01S5/227 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/0658
摘要： In a semiconductor laser device comprising an n-type cladding layer, an active layer formed on the cladding layer, a p-type cladding layer formed on the active layer, and a p-type saturable light absorbing layer provided in the p-type cladding layer, the current confinement width for confining current injected into the active layer being W, the thickness d.sub.a of the active layer, the optical confinement factor .GAMMA..sub.a of the active layer, the thickness d.sub.s of the saturable light absorbing layer, the optical confinement factor .GAMMA..sub.s of the saturable light absorbing layer, and the light spot size S on a facet of the semiconductor laser device are so set as to satisfy a predetermined relationship. The reflectivity on a light output facet is set in the range of 10 to 20%.
摘要翻译：在包括n型包覆层，形成在包层上的有源层，形成在有源层上的p型包层和设置在p型包层中的p型可饱和光吸收层的半导体激光器件中，注入有源层的限流电流的限流宽度为W，有源层的厚度da，有源层的光限制因子GAMMA a，可饱和光吸收层的厚度ds，光限制因子可饱和光吸收层的GAMMA和半导体激光装置的面上的光斑尺寸S被设定为满足预定关系。光输出面的反射率设定在10〜20％的范围内。

8. 发明授权

US08121163B2 Semiconductor laser diode apparatus and method of fabricating the same 失效
标题翻译：半导体激光二极管装置及其制造方法
公开(公告)号：US08121163B2
公开(公告)日：2012-02-21
申请号：US12047924
申请日：2008-03-13
申请人： Saburo Nakashima , Yasuhiko Nomura , Masayuki Hata , Takenori Goto
发明人： Saburo Nakashima , Yasuhiko Nomura , Masayuki Hata , Takenori Goto
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/0207 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/22 , H01S5/3201 , H01S5/32341 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser diode apparatus capable of suppressing variation in an emission position and an emission direction of a laser beam emitted from a semiconductor laser diode element is obtained. This semiconductor laser diode apparatus includes a semiconductor laser diode element having warping along either a first direction in which a cavity extends or a second direction intersecting with the first direction and a base on which a convex side of the warping of the semiconductor laser diode element is fixed, wherein a distance between a first end of the semiconductor laser diode element in a direction of larger warping among the first and second directions and the base is smaller than a distance between a second end of the semiconductor laser diode element in the direction of the large warping among the first and second directions and the base.
摘要翻译：获得能够抑制从半导体激光二极管元件发射的激光束的发射位置和发射方向的变化的半导体激光二极管装置。该半导体激光二极管装置包括：半导体激光二极管元件，其具有沿着与第一方向相交的第一方向或与第一方向交叉的第二方向的翘曲;以及半导体激光二极管元件的翘曲的凸侧固定，其中所述半导体激光二极管元件的第一端之间沿所述第一和第二方向之间的较大翘曲的方向与所述基座之间的距离小于所述半导体激光二极管元件的第二端之间的距离，第一和第二个方向和基地之间大的扭曲。

9. 发明申请

US20060267039A1 Semiconductor light emitting element and semiconductor light emitting device 有权
标题翻译：半导体发光元件及半导体发光元件
公开(公告)号：US20060267039A1
公开(公告)日：2006-11-30
申请号：US11442277
申请日：2006-05-30
申请人： Saburo Nakashima , Koutarou Furusawa , Takenori Goto
发明人： Saburo Nakashima , Koutarou Furusawa , Takenori Goto
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L24/32 , H01L33/20 , H01L33/483 , H01L2924/12041 , H01L2924/00
摘要： A semiconductor light emitting element includes a semiconductor layer which has an electrode on at least one principal surface and a supporting substrate which is bonded with the electrode by a conductive adhesive. One of the semiconductor layer and the supporting substrate includes a protruded surface protruding in one portion on the principal surface, the other includes a junction surface which opposes the protruded surface, the junction surface is bonded with the protruded surface with the electrode and the conductive adhesive interposed between the protruded surface and the junction surface, and the junction surface is larger in area than a region to be bonded with the protruded surface.
摘要翻译：半导体发光元件包括在至少一个主表面上具有电极的半导体层和通过导电粘合剂与电极接合的支撑衬底。半导体层和支撑基板中的一个包括在主表面上一个部分突出的突出表面，另一个包括与突出表面相对的接合面，接合表面与电极和导电粘合剂的突出表面接合插入在突出表面和接合面之间，并且接合面的面积大于与突出表面接合的区域。

10. 发明授权

US06743702B2 Nitride-based semiconductor laser device and method of forming the same 失效
标题翻译：基于氮化物的半导体激光器件及其形成方法
公开(公告)号：US06743702B2
公开(公告)日：2004-06-01
申请号：US10058378
申请日：2002-01-30
申请人： Takenori Goto , Yasuhiko Nomura , Tsutomu Yamaguchi , Kiyoshi Oota
发明人： Takenori Goto , Yasuhiko Nomura , Tsutomu Yamaguchi , Kiyoshi Oota
IPC分类号： H01L21265
CPC分类号： H01S5/0425 , H01L21/28575 , H01S5/32341
摘要： A highly reliable semiconductor laser device having a low operating voltage is obtained by increasing adhesive force of the overall electrode layer to a nitride-based semiconductor layer without deteriorating a low contact property. This nitride-based semiconductor laser device comprises a nitride-based semiconductor layer formed on an active layer and an electrode layer formed on the nitride-based semiconductor layer, while the electrode layer includes a first electrode layer containing a material having strong adhesive force to the nitride-based semiconductor layer and a second electrode layer, formed on the first electrode layer, having weaker adhesive force to the nitride-based semiconductor layer than the first electrode layer for reducing contact resistance of the electrode layer with respect to the nitride-based semiconductor layer. Thus, the adhesive force of the overall electrode layer to the nitride-based semiconductor layer is increased due to the first electrode layer, and lower contact resistance is attained due to the second electrode layer. Therefore, the device can be improved in reliability and reduced in operating voltage.
摘要翻译：通过增加整个电极层对氮化物基半导体层的粘合力而不降低接触性能，可获得具有低工作电压的高度可靠的半导体激光器件。该氮化物系半导体激光装置包括在有源层上形成的氮化物系半导体层和形成在氮化物系半导体层上的电极层，而电极层包括第一电极层，该第一电极层含有对氮化物基半导体层和第二电极层，形成在第一电极层上，与用于降低电极层相对于氮化物基半导体的接触电阻的第一电极层相比，对氮化物基半导体层具有较弱的粘附力层。因此，由于第一电极层，整个电极层对氮化物基半导体层的粘附力增加，并且由于第二电极层而获得较低的接触电阻。因此，可以提高器件的可靠性和降低工作电压。

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