会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 35. 发明授权
    • Semiconductor device having a multilayered interconnection structure
    • 具有多层互连结构的半导体器件
    • US08058730B2
    • 2011-11-15
    • US12239236
    • 2008-09-26
    • Makoto WadaKazuyuki Higashi
    • Makoto WadaKazuyuki Higashi
    • H01L29/06
    • H01L23/5226H01L21/76801H01L21/76829H01L21/76832H01L21/76834H01L23/5329H01L23/53295H01L2924/0002H01L2924/00
    • A semiconductor device according to one embodiment includes: a semiconductor substrate provided with a semiconductor element; a first conductive member formed on the semiconductor substrate; a first insulating film formed on the same layer as the first conductive member; a second conductive member formed so as to contact with a portion of an upper surface of the first conductive member, a second insulating film formed on the first insulating film so as to contact with a portion of the upper surface of the first conductive member, and including at least one type of element among elements contained in the first insulating film except Si; and an etching stopper film formed on the second insulating film so as to contact with a portion of a side surface of the second conductive member, and having an upper edge located below the upper surface of the second conductive member.
    • 根据一个实施例的半导体器件包括:设置有半导体元件的半导体衬底; 形成在所述半导体衬底上的第一导电构件; 形成在与所述第一导电构件相同的层上的第一绝缘膜; 形成为与第一导电构件的上表面的一部分接触的第二导电构件,形成在第一绝缘膜上以与第一导电构件的上表面的一部分接触的第二绝缘膜,以及 包括除Si之外的第一绝缘膜中包含的元素中的至少一种元素; 以及形成在所述第二绝缘膜上以与所述第二导电构件的侧表面的一部分接触并且具有位于所述第二导电构件的上表面下方的上边缘的蚀刻阻挡膜。
    • 37. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20090206491A1
    • 2009-08-20
    • US12361979
    • 2009-01-29
    • Makoto WadaAkihiro KajitaKazuyuki Higashi
    • Makoto WadaAkihiro KajitaKazuyuki Higashi
    • H01L23/522
    • H01L21/76802H01L21/76816H01L21/76834H01L23/5226H01L23/53238H01L23/53295H01L2924/0002H01L2924/00
    • A semiconductor device according to one embodiment includes: a semiconductor substrate provided with a semiconductor element; a connecting member formed above the semiconductor substrate configured to electrically connect upper and lower conductive members; a first insulating film formed in the same layer as the connecting member; a wiring formed on the connecting member, the wiring including a first region and a second region, the first region contacting with a portion of an upper surface of the connecting member, and the second region located on the first region and having a width greater than that of the first region; and a second insulating film formed on the first insulating film so as to contact with at least a portion of the first region of the wiring and with a bottom surface of the second region.
    • 根据一个实施例的半导体器件包括:设置有半导体元件的半导体衬底; 形成在所述半导体衬底之上的连接构件,构造成电连接上导电构件和下导电构件; 形成在与所述连接构件相同的层中的第一绝缘膜; 形成在所述连接构件上的布线,所述布线包括第一区域和第二区域,所述第一区域与所述连接构件的上表面的一部分接触,所述第二区域位于所述第一区域上,并且宽度大于 第一区域; 以及形成在所述第一绝缘膜上以与所述布线的所述第一区域的至少一部分和所述第二区域的底表面接触的第二绝缘膜。