专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明专利

JP2006017625A Vehicle-mounted pulse radar apparatus 有权
标题翻译：车辆安装脉冲雷达装置
公开(公告)号：JP2006017625A
公开(公告)日：2006-01-19
申请号：JP2004196939
申请日：2004-07-02
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SUGIMOTO HIROSHI
IPC分类号： G01S13/93 , G01S7/40
摘要： PROBLEM TO BE SOLVED: To provide a vehicle-mounted pulse radar apparatus which can detect abnormalities in an RF transmission/reception circuit using a low-priced, small-sized circuit with high reliability. SOLUTION: A signal processing apparatus 14A for calculating a distance d to an object to be detected 7 on the basis of transmission/reception signals W1, W2 comprises variable frequency means 17 for the transmission signal W1 and abnormality decision means for the RF transmission/reception circuit 15A. The variable frequency means 17 changes the frequency of the transmission signal W1 within a predetermined range to compulsorily change the phase state of a leakage wave within the RF transmission/reception circuit 15A. The abnormality decision means compares a normal-level range of fluctuation learned on the basis of normal reception signals with a leakage-included-level range of fluctuation which is observed as a DC component of an IF reception signal when the phase state of the leakage wave changes, generates an abnormality signal E of the RF transmission/reception circuit 15A on the basis of the difference between the normal-level range of fluctuation and the leakage-included-level range of fluctuation, and notifies a control system of a vehicle of an abnormality. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种车载脉冲雷达装置，其可以使用具有高可靠性的低价格小型电路来检测RF发送/接收电路中的异常。解决方案：用于根据发送/接收信号W1，W2计算到被检测对象7的距离d的信号处理装置14A包括用于发送信号W1的可变频率装置17和用于RF的异常判定装置发送/接收电路15A。可变频率装置17将发送信号W1的频率改变在预定范围内，以强制地改变RF发送/接收电路15A内的泄漏波的相位状态。异常判定装置将基于正常接收信号学习的波动的正常水平范围与在泄漏波的相位状态下作为IF接收信号的直流分量观察到的波动的泄漏包括电平范围进行比较根据正常水平的波动范围与包含泄漏的水平波动范围的差异，生成RF发送接收电路15A的异常信号E，并通知车辆的控制系统异常。版权所有（C）2006，JPO＆NCIPI

32. 发明专利

JP2005353964A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2005353964A
公开(公告)日：2005-12-22
申请号：JP2004175312
申请日：2004-06-14
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OTSUKA KENICHI , TARUI YOICHIRO , MATSUNO YOSHINORI , SUGIMOTO HIROSHI , IMAIZUMI MASAYUKI , TAKAMI TETSUYA
IPC分类号： H01L29/872 , H01L27/04 , H01L29/47 , H01L29/78
CPC分类号： H01L29/7806 , H01L29/0696 , H01L29/7813
摘要： PROBLEM TO BE SOLVED: To reduce gross loss summing a loss at switching time and a normal loss by reducing device area in a semiconductor device in which a MOSFET and a Schottky diode are integrated. SOLUTION: In the device, the length Ls of the Schottky diode defined by the length of a portion existing on the n-type drift layer 2 of a Schottky electrode 11 is 20-60% of the length Lm of a MOSFET constituted of a p-type body region 3 and a depletion region 5, or of a p-type region and a trench region. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过减少集成MOSFET和肖特基二极管的半导体器件中的器件面积，减少总开关损耗的总损耗和正常损耗。解决方案：在器件中，由肖特基电极11的n型漂移层2上存在的部分的长度限定的肖特基二极管的长度Ls是构成的MOSFET的长度Lm的20-60％的p型体区3和耗尽区5，或p型区域和沟槽区域。版权所有（C）2006，JPO＆NCIPI

33. 发明专利

JP2004319964A Semiconductor device and manufacturing method therefor 审中-公开
公开(公告)号：JP2004319964A
公开(公告)日：2004-11-11
申请号：JP2004017002
申请日：2004-01-26
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TARUI YOICHIRO , OTSUKA KENICHI , IMAIZUMI MASAYUKI , SUGIMOTO HIROSHI , TAKAMI TETSUYA
IPC分类号： H01L21/265 , H01L21/04 , H01L21/266 , H01L21/336 , H01L29/10 , H01L29/12 , H01L29/24 , H01L29/78
CPC分类号： H01L29/66068 , H01L21/0465 , H01L21/047 , H01L29/1095 , H01L29/1608 , H01L29/7802
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device whose source region and base region are formed by ion injection by using the same mask and a manufacturing method therefor by improving the tradeoff relation between a channel resistance and a JFET resistance which is a problem arising when an element is made thin.
SOLUTION: A longitudinal MOSFET which uses SiC has its source region 4 and base region 5 formed by ion injection by using the same mask 9 in a tapered shape and then the base region 5 is formed in the tapered shape. When a material having the same range of ion injection with SiC is used for the mask 9 in the tapered shape, the taper angle of the mask 9 is 30 to 60° and when SiO
2 is used, the taper angle is 20 to 45°.
COPYRIGHT: (C)2005,JPO&NCIPI

34. 发明专利

JP2003292399A Method for producing single crystal silicon carbide 有权
标题翻译：生产单晶碳化硅的方法
公开(公告)号：JP2003292399A
公开(公告)日：2003-10-15
申请号：JP2002094436
申请日：2002-03-29
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： IMAIZUMI MASAYUKI , TARUI YOICHIRO , SUGIMOTO HIROSHI , OTSUKA KENICHI , TAKAMI TETSUYA
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method for producing single crystal silicon carbide containing no cavity caused by screw dislocation.
SOLUTION: This method comprises the step of preparing a base material which is a seed crystal for single crystal silicon carbide and has, on its surface, cavities at the center part of screw dislocation or which is a substrate cut out with an off angle; the step of working the surface of the base material to form thereon a pedestal-like structure or a grooved structure having the difference in level; and the step of accumulating single crystal silicon carbide by the epitaxial growth method on the surface having the difference in level. The method provides single crystal silicon carbide the step density of which on the surface is reduced and the cavities caused by screw dislocation are blocked.
COPYRIGHT: (C)2004,JPO
摘要翻译：待解决的问题：提供一种不产生由螺旋位错引起的空腔的单晶碳化硅的制造方法。解决方案：该方法包括制备作为单晶碳化硅的晶种的基材的步骤，并且在其表面上具有在螺旋位错的中心部分处的空腔，或者是剥离的基材角度; 对基材的表面进行加工以在其上形成具有台阶差的基座状结构或带槽结构的步骤; 以及通过外延生长法在具有水平差的表面上积累单晶碳化硅的步骤。该方法提供单晶碳化硅，其表面上的阶梯密度降低，并且由螺旋位错引起的空洞被阻挡。版权所有（C）2004，JPO

35. 发明专利

JP2002334998A SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 失效
公开(公告)号：JP2002334998A
公开(公告)日：2002-11-22
申请号：JP2001137061
申请日：2001-05-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUGIMOTO HIROSHI , OTSUKA KENICHI , TARUI YOICHIRO , IMAIZUMI MASAYUKI
IPC分类号： H01L29/872 , H01L29/47
摘要： PROBLEM TO BE SOLVED: To provide at a low cost a silicon carbide semiconductor device having a low reverse leakage current. SOLUTION: The silicon carbide semiconductor device has an SiC substrate 1, a drift layer 2 made of SiC formed on the upper surface of the SiC substrate 1, and a Schottky barrier electrode 4 that is brought into contact with the drift layer 2 for arranging, so that one portion of the upper surface of the drift layer 2 is covered and allows an interface, that comes into contact with the drift layer 2, to function as a Schottky barrier. At the outer circumferential section of the Schottky barrier electrode 4, a high-resistance guard ring 18 is interposed between the drift layer 2 and Schottky barrier electrode 4 as a guard ring, and the Schottky barrier electrode 4 is formed into a shape of being lifted by the guard ring.

36. 发明专利

JP2001343457A ON-BOARD RADAR EQUIPMENT 失效
公开(公告)号：JP2001343457A
公开(公告)日：2001-12-14
申请号：JP2000163662
申请日：2000-05-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUGIMOTO HIROSHI
IPC分类号： G01S13/93 , G01S7/40 , G01S13/34 , G01S13/60
摘要： PROBLEM TO BE SOLVED: To obtain onboard radar equipment capable of diagnosing the failure of a whole scan mechanism system, without the need for providing extra sensors. SOLUTION: The on-board radar equipment is provided with a detection data storage part 6 for storing the levels of the detection data of objects to be detected scan axis direction by each scanning axis direction and distance by distance, a difference data computing part 8 for comparing the levels of the detection data of the objects to be detected at the same distance in different scanning axis directions with each other through the use of the storage data of the detection data storage part 6, a level comparator 9 to compare the output data of the difference data computing part 8 with a threshold 14 for determining the presence or absence of a level difference in the detection data at the same distance in each scanning axis direction for every scan period, and a failure determining part 10 for determining that the scan mechanism is faulty, when the number of determination of the absence of a difference in the level comparator 9 exceeds a prescribed number.

37. 发明专利

JP2001291869A SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
公开(公告)号：JP2001291869A
公开(公告)日：2001-10-19
申请号：JP2000104476
申请日：2000-04-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： IMAIZUMI MASAYUKI , TARUI YOICHIRO , SUGIMOTO HIROSHI , OTSUKA KENICHI , TAKAMI TETSUYA
IPC分类号： H01L21/336 , H01L29/12 , H01L29/24 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device constituted of silicon carbide semiconductor forming a storage type channel with high quality by epitaxial growth and etching without using ion implantation method. SOLUTION: A region 3 having p-type conductivity is partially formed in a silicon carbide semiconductor epitaxial layer 2 having n-type conductivity, and then silicon carbide semiconductor epitaxial layers 4 and 5 having n-type conductivity are accumulated on a semiconductor substrate 1 constituted of silicon carbide semiconductor having n-type conductivity in which silicon carbide semiconductor epitaxial layers having n-type conductivity are accumulated. Then, the silicon carbide semiconductor epitaxial layers 4 and 5 having n-type conductivity are partially etched, and a channel 10 constituted of n-type silicon carbide semiconductor epitaxial layers in the laminated structure of metal/ insulating film/semiconductor is formed by using the etched faces.

38. 发明专利

JPH06318255A VIDEO SIGNAL PROCESSOR 失效
公开(公告)号：JPH06318255A
公开(公告)日：1994-11-15
申请号：JP2422793
申请日：1993-02-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUGIMOTO HIROSHI
IPC分类号： G08G1/16 , B60W30/00 , G06F17/15 , G06T1/00 , G06T5/00 , G06T7/00 , H04N7/18 , G06F15/70 , G06F15/62 , G06F15/64 , G06F15/68
摘要： PURPOSE:To provide the video signal processor which can continuously and automatically adjust the deviation of characteristics caused by various factors after respective video signal fetching systems are adjusted. CONSTITUTION:This device is provided with histogram extraction circuits 13a and 13b for extracting density histograms Ha and Hb concerning first and second video signals Va and Vb within a prescribed period based on first and second quantized data Da and Db, a deviation amount calculating means 14 for comparatively calculating the deviation amount of the distribution of the density histogram of the second video signal corresponding to the distribution of the density histogram of the first video signal, and a correcting means 12 for correcting the second quantized data based on the deviation amount, and the density dispersion of first and second video signal caused by the characteristic dispersion between the first and second video signal fetching systems is absorbed and automatically corrected.

39. 发明专利

JPH06104220A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06104220A
公开(公告)日：1994-04-15
申请号：JP25282992
申请日：1992-09-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUGIMOTO HIROSHI , TADA HITOSHI , MIURA TAKESHI , SHIBA TETSUO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To obtain a dry etching method of a compound semiconductor device excellent in controllability, the substrate of which is not damaged and the underside of which is hardly roughened. CONSTITUTION:In the dry etching of a semiconductor material using an etching gas containing at least the mixed gas of hydrocarbon and hydrogen and a metallic material for an electrode, oxygen is added to the etching gas, thus preventing the formation of a hydrocarbon high-molecular film on a surface to be etched with excellent controllability, then reducing the roughness of an etched underside.

40. 发明专利

JPH03104171A FIELD EFFECT TRANSISTOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03104171A
公开(公告)日：1991-05-01
申请号：JP24142289
申请日：1989-09-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUGIMOTO HIROSHI , MATSUI TERUHITO , OTSUKA KENICHI , ABE YUJI , OISHI TOSHIYUKI
IPC分类号： H01L29/812 , H01L21/338 , H01L29/78
摘要： PURPOSE:To realize a short channel device by constituting a second conductivity type channel semiconductor layer sandwiched by a source semiconductor layer and a drain semiconductor layer which have first conductivity type. CONSTITUTION:The title transistor is constituted of the following; a source 2 of N-type conductivity, a drain 3 of N-type conductivity, a gate insulating film 4, a gate electrode 5, a channel part 6, a semiconductor layer 7 for channel use which has P-type conductivity, a semiinsulative substrate 8, and a resist mask 9 for etching use. The electrode 5 is formed on the inner wall of a trench formed so as to penetrate the drain 3 and the semiconductor layer 7 and reach the source 2. By forming the channel semiconductor layer in this manner, the channel length can be controlled with the thickness of the channel semiconductor layer, so that the length can be reduced independently of the precision of lithography technique. Since the gate electrode layer is formed on the inner wall of the trench, alignment of the gate electrode can be performed without precise lithography, by continuously forming the channel part and the gate part.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式