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1. 发明授权

US3614996A Elevator control system 失效
公开(公告)号：US3614996A
公开(公告)日：1971-10-26
申请号：US3614996D
申请日：1969-11-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： SAITO KENJI , KAMAIKE HIROSHI , SUGIMOTO HIROSHI
IPC分类号： B66B1/30 , B66B1/28 , B66B1/34 , B66B1/44
CPC分类号： B66B1/3484 , B66B1/28
摘要： AN ELEVATOR CONTROL SYSTEM INCLUDES A NEGATIVE FEEDBACK TYPE CONTROLLER APPLIED WITH BOTH A SIGNAL FOR COUNTERBALANCING AN UNBALANCED TORQUE APPLIED TO AN ELEVATOR DRIVE CIRCUIT AND STORED IN A MEMORY, AND A SPEED SIGNAL FOR AN ELEVATOR CAR. THE FORMER SIGNAL IS APPLIED TO THE CONTROLLER NOT ONLY BEFORE THE CAR STARTS BUT ALSO AFTER THE SPEED SIGNAL HAS BEEN APPLIED TO THE CONTROLLER. THUS THE CAR IS SMOOTHLY STARTED WITHOUT A DISCONTINUITY OF SIGNAL LEVEL BETWEEN BOTH SIGNALS APPLIED TO THE CONTROLER.

2. 发明专利

FR2647276A1 LASER A SEMICONDUCTEURS 未知
公开(公告)号：FR2647276A1
公开(公告)日：1990-11-23
申请号：FR9006375
申请日：1990-05-22
申请人： MITSUBISHI ELECTRIC CORP , MITSUBISHI ELECTRIC CORP
发明人： YUJI ABE , ABE YUJI , HIROSHI SUGIMOTO , SUGIMOTO HIROSHI , KENICHI OHTSUKA , OHTSUKA KENICHI , TOSHIYUKI OISHI , OISHI TOSHIYUKI , TERUHITO MATSUI , MATSUI TERUHITO
IPC分类号： H01S5/12 , H01S5/00 , H01S3/19
摘要： Un laser à semiconducteurs comprend un substrat semiconducteur 1, une couche de réseau de diffraction 2a formée par croissance sur le substrat et consistant en un matériau ayant une bande d'énergie interdite inférieure à celle du substrat, des sillons à bandes parallèles de période prédéterminée qui atteignent le substrat et sont formés sur la totalité de la surface de la couche de réseau de diffraction 2a, une couche de barrière 4 ayant la même composition que le substrat, une couche active 5 ayant une bande d'énergie interdite inférieure à celle de la couche de réseau de diffraction, et un réseau de diffraction qui est constitué par la partie restante de la couche de réseau de diffraction.

3. 发明公开

EP1936695A4 SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：碳化硅半导体装置
公开(公告)号：EP1936695A4
公开(公告)日：2008-10-22
申请号：EP06745609
申请日：2006-04-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUGIMOTO HIROSHI , MATSUNO YOSHINORI , OHTSUKA KENICHI , MIKAMI NOBORU , KURODA KENICHI
IPC分类号： H01L21/04 , H01L29/04 , H01L29/06 , H01L29/24 , H01L29/861
CPC分类号： H01L29/8611 , H01L21/0445 , H01L29/045 , H01L29/0684 , H01L29/1608 , H01L29/6606
摘要： On a major surface of an n-type silicon carbide inclined substrate (2) is formed an n-type voltage-blocking layer (3) made of silicon carbide by means of epitaxial growth. On the n-type voltage-blocking layer (3) is formed a p-type silicon carbide region (4) rectangular when viewed from above. On the surface of the p-type silicon carbide region (4) is formed a p-type contact electrode (5). In the p-type silicon carbide region (4), the periphery of the p-type silicon carbide region (4) that is parallel with a (11-20) plane (14a) of the silicon carbide crystal, which is liable to cause avalanche breakdown, is located on the short side. In this manner, the dielectric strength of a silicon carbide semiconductor device can be improved.

4. 发明专利

DE602006017413D1 SILICIUMCARBID-HALBLEITERANORDNUNG 未知
公开(公告)号：DE602006017413D1
公开(公告)日：2010-11-18
申请号：DE602006017413
申请日：2006-04-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUGIMOTO HIROSHI , MATSUNO YOSHINORI , OHTSUKA KENICHI , MIKAMI NOBORU , KURODA KENICHI
IPC分类号： H01L29/161 , H01L29/04 , H01L29/06 , H01L29/24 , H01L29/861

5. 发明专利

DE3936694C2 未知
公开(公告)号：DE3936694C2
公开(公告)日：1995-06-08
申请号：DE3936694
申请日：1989-11-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： ABE YUJI , SUGIMOTO HIROSHI , OHTSUKA KENICHI , OISHI TOSHIYUKI , MATSUI TERUHITO
IPC分类号： H01S5/00 , H01S5/12 , H01S3/085 , H01S3/19 , G02B5/18 , G03F7/00
摘要： A semiconductor laser device includes an active layer, a first semiconductor layer having a larger energy band gap than the active layer, a diffraction grating layer having a larger energy band gap than the active layer and a smaller energy band gap than the first semiconductor layer, and a second semiconductor layer having the same composition as the first semiconductor layer, successively grown on the active layer, parallel stripe grooves of predetermined period reaching the first semiconductor layer produced at the entire surface of the grown layers, a cladding layer having the same composition as the first semiconductor layer which is re-grown thereon, and a diffraction grating constituted by the remainder of the diffraction grating layer. The coupling coefficient of the light is determined by the film thickness of a layer produced between the active layer and the diffraction grating layer, and the amplitude of the diffraction grating is determined by the layer thickness of the diffraction grating layer. Therefore, the coupling coefficient can be set at a design value at high precision and at high reproducibility.

6. 发明专利

GB2145650B DEVICE AND METHOD FOR STORING RADIOACTIVE WASTES 未知
公开(公告)号：GB2145650B
公开(公告)日：1987-07-15
申请号：GB8401481
申请日：1984-01-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUGIMOTO HIROSHI
IPC分类号： G21F9/34 , G21F9/36

7. 发明专利

GB2115159A ELECTRIC DYNAMOMETER 未知
公开(公告)号：GB2115159A
公开(公告)日：1983-09-01
申请号：GB8304417
申请日：1982-06-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUGIMOTO AKINORI , SUGIMOTO HIROSHI
IPC分类号： G01L3/22
摘要： PCT No. PCT/JP82/00247 Sec. 371 Date Feb. 25, 1983 Sec. 102(e) Date Feb. 25, 1983 PCT Filed Jun. 28, 1982 PCT Pub. No. WO83/00224 PCT Pub. Date Jan. 20, 1983.An electric dynamometer which includes a rotor mounted for rotation on a shaft and a stator surrounding the rotor, the stator including a yoke surrounding the rotor in radially spaced relation therewith, and a loss drum disposed between the yoke and the rotor so as to be rotatable 360 DEG about the rotor. An electric motor is coupled through its rotor to the loss drum so as to rotate the loss drum therewith. A stator of the electric motor is fixed to the yoke, and the yoke and stator of the motor are supported for rotation about the respective rotors. A torque detector is fixed to the stator of the motor so as to measure the combined torque exterted on the yoke and the stator of the motor about the rotors.

8. 发明专利

DE4028528C2 未知
公开(公告)号：DE4028528C2
公开(公告)日：1993-09-30
申请号：DE4028528
申请日：1990-09-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： OHISHI TOSHIYUKI , ABE YUJI , SUGIMOTO HIROSHI , OHTSUKA KEN-ICHI , MATSUI TERUHITO
IPC分类号： H01L29/68 , H01L29/205 , H01L29/73 , H01L29/732
摘要： An avalanche transistor has a heterojunction emitter-base junction. The avalanche transistor includes a spacer layer provided between an emitter layer and a base layer. The spacer layer has an energy band gap between that of the base layer and that of the emitter layer, a carrier concentration lower than that of the base layer, and a thickness so that the whole spacer layer becomes a depletion layer at thermal equillibrium so that a neutral region is produced in the spacer layer at a voltage lower than the threshold voltage of the emitter-base junction. Thus, the same element is both bistable with the base current as a parameter and has an S-shaped negative differential resistance with the base voltage as a parameter.

9. 发明专利

GB2232814A A semiconductor laser device 未知
公开(公告)号：GB2232814A
公开(公告)日：1990-12-19
申请号：GB8922389
申请日：1989-10-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： ABE YUJI , SUGIMOTO HIROSHI , OHTSUKA KENICHI , OISHI TOSHIYUKI , MATSUI TERUHITO
IPC分类号： H01S5/00 , H01S5/12
摘要： The device comprises an active layer 5 and a diffraction grating layer 2a formed on a substrate 1. The grating layer is formed by graving on the substrate material (e.g. InP) a material of smaller band gap (e.g. InGaAsP), etching through the grating layer into the substroke, and graving semiconductor material of the same composition as that of the substrate over the etched grating layer. … In an alternative construction, (Fig 1), the active layer may be provided between the grating layer and the substrate. … The coupling coefficient with light produced in the active layer is determined by the thickness of the layer between that and the grating, and the amplitude of the grating is determined by the thickness of the grating layer, thus enabling the coupling coefficient to be accurately set. … …

10. 发明专利

DE112012007246B4 Verfahren zur Herstellung einer Siliciumcarbidhalbleitervorrichtung 未知
公开(公告)号：DE112012007246B4
公开(公告)日：2022-12-22
申请号：DE112012007246
申请日：2012-12-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUGIMOTO HIROSHI , NAKAMURA TAKUYO
IPC分类号： H01L21/66 , H01L21/20 , H01L29/161
摘要： Verfahren zur Herstellung einer Siliciumcarbidhalbleitervorrichtung (10, 10A), die eine Elementstruktur (1, 1A) aufweist, wobei das Verfahren die folgenden Schritte umfasst:(a) Bereitstellen eines Siliciumcarbidhalbleitersubstrats eines ersten Leitfähigkeitstyps;(b) Bereitstellen einer Epitaxieschicht eines ersten Leitfähigkeitstyps auf dem Siliciumcarbidhalbleitersubstrat,(c) Ausbilden einer Störstellenschicht eines zweiten Leitfähigkeitstyps, so dass sie in Kontakt mit der Epitaxieschicht gebildet ist, zum Ausbilden der Elementstruktur (1, 1A), die die Epitaxieschicht und die Störstellenschicht aufweist;(d) Durchführen einer Prüfung zum Feststellen der Eigenschaften einer Vorwärtsleitung zwischen der Epitaxieschicht und der Störstellenschicht in der Elementstruktur (1, 1A);(e) Klassifizieren der Elementstruktur (1, 1A) als eine erste Gruppe, die für die Vorwärtsleitung geeignet ist, oder als eine zweite Gruppe, die für die Vorwärtsleitung ungeeignet ist, auf der Grundlage eines Prüfungsergebnisses des Schritts (d); und(f) Herstellen der Siliciumcarbidhalbleitervorrichtung (10), die die Vorwärtsleitung in der Elementstruktur benötigt, unter Verwendung der Elementstruktur (1) der ersten Gruppe, oder Herstellen der Siliciumcarbidhalbleitervorrichtung (10A), die die Vorwärtsleitung in der Elementstruktur nicht benötigt, unter Verwendung der Elementstruktur (1A) der zweiten Gruppe.

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