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31. 发明专利

JPS634443A MAGNETO-OPTICAL RECORDING MEDIUM 失效
公开(公告)号：JPS634443A
公开(公告)日：1988-01-09
申请号：JP14741086
申请日：1986-06-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJII YOSHIO , TSUTSUMI KAZUHIKO , HAJIMA KAZUO , NOSE YUKARI , SUGAWARA HIROSHI , KUROKAWA HIROSHI
IPC分类号： G06K19/06 , C22C19/07 , G06K19/00 , G11B11/10 , G11B11/105 , H01F10/16
摘要： PURPOSE:To provide a titled medium which has good perpendicular magnetic anisotropy, decreases the disturbance in the shape of recording pits, has a low noise level during reproducing and has an excellent erasing characteristic by forming said medium of a (Gd1-XRx)ZCo1-Z alloy film having the axis of easy magnetization in the direction perpendicular to the film plane and having a specific atomic compsn. ratio and coercive force. CONSTITUTION:This medium is formed of the (Gd1-XRx)ZCo1-Z alloy film (R is a rare earth metal) which has the axis of easy magnetization in the direction perpendicular to the film plane and has the atomic compsn. ratio 0.3 =4KOe coercive force at 20 deg.C. The perpendicularly magnetized film suitable for magneto-optical recording is obtd. when x>=0.1, but the stability of the recording pits is poor is x is 0.9. The noise level is low and constant if the coercive force at 20 deg.C is >=4KOe. The coercive force can be controlled by adjusting the content of Co, i.e., the value of z or adjusting the value of x or both said values.

32. 发明专利

JPS61278029A PRODUCTION OF MAGNETIC RECORDING ELEMENT 失效
公开(公告)号：JPS61278029A
公开(公告)日：1986-12-08
申请号：JP11912485
申请日：1985-05-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJII YOSHIO
IPC分类号： C23C14/34 , G11B5/85 , G11B5/851
摘要： PURPOSE:To form the title magnetic recording element with good productivity and without contaminating a substrate by impressing a bias voltage on the substrate through an electrically conductive brush sliding along with the substrate while rotating the substrate and forming a magnetic film having vertical magnetic anisotropy on the substrate by sputtering. CONSTITUTION:The inside of a puttering chamber is evacuated to 2X10 Torr and gaseous Ar is introduced to keep the pressure at 5X10 Torr. A shutter 11 is placed above a target 7, a high-frequency voltage is impressed on cathode 8 to generate high-frequency discharge and sputtering is carried out for 1 hr. Then the shutter 11 is opened and a magnetic thin film is formed on a revolving substrate 1. Meanwhile, a bias voltage is impressed on the surface of the magnetic thin film being formed through a conductive brush 3, a substrate holder 6 and an anode 4. Consequently, excellent vertical magnetic anisotropy is generated by the effect of bias sputtering over the whole surface of the formed magnetic thin film.

33. 发明专利

JPS5335242A AIRRCONDITIONER 失效
公开(公告)号：JPS5335242A
公开(公告)日：1978-04-01
申请号：JP10962376
申请日：1976-09-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJII YOSHIO , NISHI KENICHI
IPC分类号： F24F11/02 , F24F11/00
摘要： PURPOSE:To detect the indoor temperature and the outdoor temperature and control the diffrence between both temperatures to be, for example, 3 deg.C at night and 5 deg.C in the day.

34. 发明专利

JP2012156444A Silicon carbide semiconductor device and method of manufacturing the same 有权
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：JP2012156444A
公开(公告)日：2012-08-16
申请号：JP2011016427
申请日：2011-01-28
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FUJII YOSHIO , WATANABE HIROSHI , KAWAKAMI TAKASHI , NAKAKI YOSHIYUKI
IPC分类号： H01L29/47 , H01L29/06 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To remove a notch generated at the bottom end of a recess or to gentle the shape of the notch when forming a termination structure including an impurity region on the bottom of a recess provided in a silicon carbide semiconductor layer.SOLUTION: When a recess 7 is formed in an SiC drift layer 2 in a region for forming a guard ring 6, a pointed notch 11 appears at the bottom end of the recess 7. After forming the recess 7, an oxide layer 12 is formed by thermally oxidizing the surface of the SiC drift layer 2 including the inside of the recess 7. When the oxide layer 12 is removed by etching, the notch 11 has a gentle shape.
摘要翻译：要解决的问题：为了去除在凹槽的底端产生的凹口或者当形成包括设置在碳化硅半导体层中的凹部的底部上的杂质区域的端接结构时，缓和凹口的形状。解决方案：当在用于形成保护环6的区域中的SiC漂移层2中形成凹部7时，在凹部7的底端处出现尖锐的凹口11.在形成凹部7之后，形成氧化物层 12通过热氧化包括凹部7内部的SiC漂移层2的表面而形成。当蚀刻去除氧化物层12时，凹口11具有平缓的形状。版权所有（C）2012，JPO＆INPIT

35. 发明专利

JP2007149742A Package and electronic device using the same 有权
标题翻译：包装和电子设备使用它
公开(公告)号：JP2007149742A
公开(公告)日：2007-06-14
申请号：JP2005338600
申请日：2005-11-24
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FUJII YOSHIO , FUKUMOTO HIROSHI , OGAWA SHINPEI , YOKOYAMA YOSHINORI
IPC分类号： H01L23/02
CPC分类号： H05K3/3436 , B81B7/007 , B81C2203/019 , H01L23/04 , H01L23/10 , H01L2924/0002 , H01L2924/01079 , H01L2924/09701 , H05K1/0284 , H05K1/141 , H05K2201/09036 , H05K2201/09045 , H05K2201/10666 , H05K2203/1147 , Y02P70/613 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a package or the like which has proper electrical connections and hermetic sealing, after the upper substrate and the lower substrate are jointed via solder.
SOLUTION: An upper-sealing ring 84 and a lower-sealing ring 82 are stuck via sealing solder 72. The leading edge of a sealing protrusion 6 is narrower than the lower-sealing ring 82. Therefore, the sealing solder 72 is provided on the lower-sealing ring 82 and on a side face of the upper-sealing ring 84. In addition, the upper connection pad 83 and the lower connection pad 81 are stuck via connection solder 71. The leading edge of a connection protrusion 5 is smaller in width than the lower connection pad 81. Thus, the connection solder 71 is provided on the lower connection pad 81 and on a side face of the upper connection pad 83.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：在通过焊料接合上基板和下基板之后，提供具有适当的电连接和气密密封的封装等。解决方案：上密封环84和下密封环82通过密封焊料72粘合。密封突起6的前缘比下密封圈82窄。因此，密封焊料72是设置在下密封环82上和上密封环84的侧面上。此外，上连接焊盘83和下连接焊盘81通过连接焊料71粘合。连接突起5的前缘宽度小于下连接焊盘81.因此，连接焊料71设置在下连接焊盘81和上连接焊盘83的侧面上。版权所有（C）2007，JPO＆INPIT

36. 发明专利

JP2005243756A External resonator type variable wavelength semiconductor laser device 审中-公开
标题翻译：外部谐振器类型可变波长半导体激光器件
公开(公告)号：JP2005243756A
公开(公告)日：2005-09-08
申请号：JP2004049038
申请日：2004-02-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TOKUNAGA TAKASHI , FUJII YOSHIO , TSUGAI MASAHIRO
IPC分类号： G02B7/00 , H01S3/10 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/028 , H01S5/14
CPC分类号： H01S5/141 , G02B26/007 , H01S3/1062 , H01S5/02248 , H01S5/028 , H01S5/0654
摘要： PROBLEM TO BE SOLVED: To provide an external resonator type variable wavelength semiconductor laser device excellent in mass productivity which has an extensive tuning range by a short external resonator length and reduces the whole device in size.
SOLUTION: The variable wavelength semiconductor laser device is provided with a semiconductor laser element 1, a condensing element 2 for condensing light from the semiconductor laser element 1, a reflecting element 4 for reflecting light from the condensing element 2, a wavelength selecting element 3 having bandpass characteristics of a narrow band, and an angular displacement drive mechanism for carrying out the angular displacement of the wavelength selecting element 3. The angular displacement drive mechanism is composed of a moving part 7 for supporting the wavelength selecting element 3, a fixed part 6 for prescribing the angular displacement center of the moving part 7, and a micromachine actuator 5 for the angular displacement of the moving part 7.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：为了提供优异的批量生产率的外部谐振器型可变波长半导体激光器装置，其通过短的外部谐振器长度具有广泛的调谐范围并且减小整个器件的尺寸。解决方案：可变波长半导体激光器件设置有半导体激光元件1，用于聚集来自半导体激光元件1的光的聚光元件2，用于反射来自聚光元件2的光的反射元件4，波长选择具有窄带的带通特性的元件3和用于执行波长选择元件3的角位移的角位移驱动机构。角位移驱动机构由用于支撑波长选择元件3的移动部7，用于规定运动部分7的角位移中心的固定部分6以及用于运动部分7的角位移的微机械致动器5.（C）2005，JPO＆NCIPI

37. 发明专利

JP2002303840A MAGNETOOPTIC ELEMENT 失效
公开(公告)号：JP2002303840A
公开(公告)日：2002-10-18
申请号：JP2001104521
申请日：2001-04-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJII YOSHIO , TOKUNAGA TAKASHI , YAMADA KOICHI
IPC分类号： G02F1/09 , G02B27/28
摘要： PROBLEM TO BE SOLVED: To provide a magnetooptic element which is decreased in the number of laminated layers, has deterioration in Faraday rotation angle suppressed and also has high transmissivity. SOLUTION: This magnetooptic element has a substrate and a lamination formed on the substrate and the lamination has a 1st lamination structure unit and a 2nd lamination structure unit; and 1st and 2nd dielectric layers which are cyclically arrayed and have different refractive indexes are arrayed in the 1st and 2nd lamination structure units symmetrically about a magnetooptic material layer and the continuity of lamination cycles of the 1st and 2nd dielectric layers is maintained at the border between the 1st lamination structure and 2nd lamination structure.

38. 发明专利

JP2002303839A MULTI-LAYERED MANGETOOPTIC ELEMENT AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002303839A
公开(公告)日：2002-10-18
申请号：JP2001104518
申请日：2001-04-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： TOKUNAGA TAKASHI , FUJII YOSHIO
IPC分类号： G02F1/09
摘要： PROBLEM TO BE SOLVED: To provide a multi-layered Faraday rotator which has a large Faraday rotational angle and high light transmissivity and its manufacturing method. SOLUTION: This manufacturing method for a multi-layered magnetooptic element has a process of forming a cyclic structure laminated base film by cyclically laminating on a transparent substrate a 1st dielectric material thin film which has a 1st refractive index and a 2nd dielectric material thin film which has a 2nd refractive index lower than the 1st refractive index, a 1st heat-treating process of heat-treating the cyclic structure laminated base film up to above temperature where the stress deformation of the cyclic structure laminated base film is removed, a process of laminating a magnetooptic material thin film on the heat-treated cyclic structure laminated base film, and a 2nd heat-treating process of heat-treating the magnetooptic material thin film for crystallization.

39. 发明专利

JP2002267837A POLARIZING ELEMENT 失效
公开(公告)号：JP2002267837A
公开(公告)日：2002-09-18
申请号：JP2001072162
申请日：2001-03-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJII YOSHIO , YAMADA KOICHI
IPC分类号： G02B5/30
摘要： PROBLEM TO BE SOLVED: To provide the polarizing element of high mechanical strength and high reliability and to provide the manufacturing method of the polarizing element by which a manufacturing process is simplified and a manufacturing cost is reduced. SOLUTION: In this polarizing element for selectively transmitting TM wave components in incident electromagnetic waves, a solid medium provided with almost parallel front surface and back surface and a plurality of almost linear groove parts almost parallelly formed with a prescribed horizontal pitch on the front surface are provided. A plurality of the groove parts are provided with the vertical cross section of the almost same shape and the groove width of the groove part is repeatedly changed with a prescribed vertical pitch in the depth direction of the groove part.

40. 发明专利

JPH09161346A METHOD AND DEVICE FOR RECORDING OVERWRITE MAGNETO-OPTICAL RECORDING MEDIUM 失效
公开(公告)号：JPH09161346A
公开(公告)日：1997-06-20
申请号：JP31517195
申请日：1995-12-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJII YOSHIO , TOKUNAGA TAKASHI , YAMADA KOICHI
IPC分类号： G11B11/10 , G11B11/105
摘要： PROBLEM TO BE SOLVED: To reproduce an initialization layer from a memory layer side by irradiating and magnetizing the initialization layer, after successively enlargement magnetizing a switch layer, a recording layer and the memory layer, irradiating low temp. operation power and recording the same pattern on tour layers. SOLUTION: Turned-up external magnetic field 15 is applied, and irradiation power is applied until a magnetic layer becomes a Curie temp. of the initialization layer 5. Then, the memory layer 2, she recording layer 3 and the switch layer 4 become the Curie temp. or above, and the magnetization disappears, and only the initialization layer 5 is magnetized. Then, light irradiation is stopped, and when the recording layer 3 becomes the Curie temp. or below, the recording layer 3 is magnetized in the direction of the external magnetic field 15. However, in such a case, a light beam peripheral part is temp. raised also, and the magnetization inversion area of the recording layer 3 is widened, and the magnetization direction is transferred to the memory layer 2 when the temp. becomes room temp. Further, the low temp. operation power is irradiated, and the magnetic pattern of the recording layer 3 is transferred to the memory layer 2, and all four layers are recorded to the same pattern as the initialization layer 5. Thus, the magnetic pattern of the initialization layer is reproduced precisely from the memory layer.

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