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    • 33. 发明授权
    • Cooling apparatus for hybrid vehicle
    • 混合动力汽车冷却装置
    • US07082905B2
    • 2006-08-01
    • US10760428
    • 2004-01-21
    • Kenji FukudaHideo KimuraNaoki HottaNoriyuki AbeTetsuya HasebeOsamu Saito
    • Kenji FukudaHideo KimuraNaoki HottaNoriyuki AbeTetsuya HasebeOsamu Saito
    • B60K6/02
    • B60K6/22B60K6/485B60K6/54B60K11/02B60K2001/003F01P3/20F01P7/165F01P7/167F01P2025/50F01P2050/24F01P2050/30F01P2060/08Y02T10/6226
    • In order to appropriately control the temperature state of multiple equipment having differing management temperatures, while preventing complication of the apparatus structure, a cooling apparatus for a hybrid vehicle is provided with a seventh flow path 30g which flows coolant which has flowed only through a main flow path 22a of a radiator 22 to a water jacket 25 via a first thermostat 23 which has an induction temperature set relatively high; an eighth flow path 30h which flows coolant which has flowed through the main flow path 22a and a sub flow path 22b of the radiator 22 to the water jacket 25 via a second thermostat 24 which has an induction temperature set relatively low, and also supplies the coolant to a PDU 14 and a downverter 15; and a bypass flow path 30j which connects a fifth flow path 30e which supplies coolant discharged from the water jacket 25 to the radiator 22, and a position of the eighth flow path 30h on a downstream side of the second thermostat 24.
    • 为了适当地控制具有不同管理温度的多台设备的温度状态,在防止装置结构的复杂化的同时,用于混合动力车辆的冷却装置设置有第七流路30g,其流过仅流过主体的冷却剂 通过第一恒温器23将散热器22的流路22a连接到水套25上,第一恒温器23具有相对较高的感应温度; 流过冷却剂的第八流路30h,流经第一恒温器24的感应温度设定得相对较低,流经主流路21a的主流路21a和副流路22b到水套25,以及 还将冷却剂供应到PDU 14和降压变换器15; 以及将从水套25排出的冷却剂向散热器22供给的第五流路30e以及第八流路30h在第二恒温器24的下游侧的位置的旁通流路30j。
    • 35. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20060108589A1
    • 2006-05-25
    • US10523585
    • 2003-08-04
    • Kenji FukudaTsutomu YatsuoShnsuke HaradaSeiji Suzuki
    • Kenji FukudaTsutomu YatsuoShnsuke HaradaSeiji Suzuki
    • H01L31/0312
    • H01L29/7802H01L21/0455H01L29/0847H01L29/086H01L29/0878H01L29/1095H01L29/1608H01L29/41766H01L29/66068H01L29/7828
    • A semiconductor device (1) includes an n-type silicon carbide substrate (2) of a high impurity concentration, an n-type silicon carbide layer (3) of a low impurity concentration disposed on the substrate, a first n-type silicon carbide region (4) of a first impurity concentration disposed on the surface of the n-type silicon carbide layer, first p-type silicon carbide regions (5) disposed as adjoined to the opposite sides of the first n-type silicon carbide region, a second n-type silicon carbide region (6) disposed selectively from the surface through the interior of the first p-type silicon carbide region, polycrystalline silicon (7) short-circuiting the first p-type silicon carbide region (5) to the second n-type silicon carbide region (6), a gate electrode (8) and a third n-type silicon carbide region (10), wherein the components thereof are individually constructed in a vertical DMOS structure. Since the polycrystalline silicon short-circuits the first p-type silicon carbide region to the second n-type silicon carbide region, the threshold voltage can be given a fixed value, and the device can be used as an actual MISFET.
    • 半导体器件(1)包括杂质浓度高的n型碳化硅衬底(2),设置在衬底上的杂质浓度低的n型碳化硅层(3),第一n型碳化硅 设置在n型碳化硅层的表面上的第一杂质浓度的区域(4),与第一n型碳化硅区域的相对侧相邻配置的第一p型碳化硅区域(5), 通过第一p型碳化硅区域的内部从表面选择性地设置的第二n型碳化硅区域(6),将第一p型碳化硅区域(5)短路到第二p型碳化硅区域 n型碳化硅区域(6),栅极电极(8)和第三n型碳化硅区域(10),其中各部件分别构成垂直DMOS结构。 由于多晶硅将第一p型碳化硅区域短路到第二n型碳化硅区域,所以阈值电压可以被赋予固定值,并且该器件可以用作实际的MISFET。